MAC12D-BD [MOTOROLA]
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| 型号： | MAC12D-BD |
| 厂家： | 
MOTOROLA |
| 描述： | 暂无描述 可控硅 三端双向交流开关 |
| 文件： | 总2页 (文件大小：45K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMICONDUCTOR TECHNICAL DATA
*Motorola preferred devices
TRIACS
12 AMPERES RMS
400 thru 800
VOLTS
Silicon Bidirectional Thyristors
Designed for high performance full–wave ac control applications where high
noise immunity and commutating di/dt are required.
•
•
•
•
•
•
•
Blocking Voltage to 800 Volts
On-State Current Rating of 12 Amperes RMS at 70°C
Uniform Gate Trigger currents in Three Modes
High Immunity to dv/dt — 250 V/µs minimum at 125°C
High Commutating di/dt — 6.5 A/ms minimum at 125°C
Industry Standard TO–220 AB Package
MT2
High Surge Current Capability — 120 Amperes
MT1
MT2
G
CASE 221A–06
(TO-220AB)
Style 4
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Value
Unit
Peak Repetitive Off-State Voltage (1)
(T = –40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open)
J
V
DRM
Volts
MAC12D
MAC12M
MAC12N
400
600
800
On-State RMS Current
I
12
A
A
T(RMS)
(Full Cycle Sine Wave, 60 Hz, T = 70°C)
C
Peak Non-repetitive Surge Current
(One Full Cycle, 60 Hz, T = 125°C)
I
100
TSM
J
2
2
Circuit Fusing Consideration (t = 8.3 ms)
I t
41
16
A sec
Peak Gate Power (Pulse Width ≤ 1.0 µs, T = 80°C)
P
Watts
Watts
°C
C
GM
Average Gate Power (t = 8.3 ms, T = 80°C)
P
0.35
C
G(AV)
Operating Junction Temperature Range
Storage Temperature Range
T
J
–40 to +125
–40 to +150
T
°C
stg
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
R
R
2.2
62.5
°C/W
°C
θJC
θJA
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
T
260
L
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(VD = Rated VDRM, Gate Open)
T
J
T
J
= 25°C
=1 25°C
I
—
—
—
—
0.01
2.0
mA
DRM
(1)
V
DRM
andV
foralltypescanbeappliedonacontinuousbasis. Ratingsapplyforzeroornegativegatevoltage;positivegatevoltageshall
RRM
notbeappliedconcurrentwithnegativepotentialontheanode. Blockingvoltagesshallnotbetestedwithaconstantcurrentsourcesuchthatthe
voltage ratings of the devices are exceeded.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
3–53
Motorola Thyristor Device Data
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
Peak On-State Voltage* (I
= ±17 A)
V
—
—
1.85
Volts
mA
TM
TM
Continuous Gate Trigger Current (V = 12 V, R = 100 Ω)
I
D
L
GT
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
5.0
5.0
5.0
13
16
18
35
35
35
Hold Current (V = 12 V, Gate Open, Initiating Current = ±150 mA)
I
—
20
40
mA
mA
D
H
Latch Current (V = 24 V, I = 35 mA)
I
D
G
L
MT2(+), G(+); MT2(–), G(–)
MT2(+), G(–)
—
—
20
30
50
80
Gate Trigger Voltage (V = 12 V, R = 100 Ω)
V
GT
Volts
D
L
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
0.5
0.5
0.5
0.69
0.77
0.72
1.5
1.5
1.5
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current*
(dv/dt)c
dv/dt
6.5
—
—
—
—
A/ms
(V = 400 V, ITM =4.4A, Commutating dv/dt = 18 V/µs, Gate Open,
D
J
T
= 125°C, f = 250 Hz, No Snubber)
Critical Rate of Rise of Off–State Voltage
(V = Rated V , Exponential Waveform, Gate Open, T = 125°C)
250
V/µs
D
DRM
J
*Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
3–54
Motorola Thyristor Device Data
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