MAC12DG [ONSEMI]

Triacs Silicon Bidirectional Thyristors; 双向晶闸管硅双向晶闸管


型号：	MAC12DG
厂家：	ONSEMI
描述：	Triacs Silicon Bidirectional Thyristors 双向晶闸管硅双向晶闸管栅极触发装置三端双向交流开关局域网
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MAC12D, MAC12M, MAC12N

Preferred Device

Triacs

Silicon Bidirectional Thyristors

Designed for high performance full−wave ac control applications

where high noise immunity and commutating di/dt are required.

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Features

TRIACS

• Blocking Voltage to 800 Volts

• On−State Current Rating of 12 Amperes RMS at 70°C

• Uniform Gate Trigger Currents in Three Quadrants, Q1, Q2, and Q3

• High Immunity to dv/dt − 250 V/ms Minimum at 125°C

• High Commutating di/dt − 6.5 A/ms Minimum at 125°C

• Industry Standard TO−220 AB Package

• High Surge Current Capability − 100 Amperes

• Pb−Free Packages are Available*

12 AMPERES RMS

400 thru 800 VOLTS

MT2

MT1

MARKING

DIAGRAM

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Peak Repetitive Off−State Voltage (Note 1)

DRM,

RRM

(T = −40 to 125°C, Sine Wave,

MAC12xG

AYWW

50 to 60 Hz, Gate Open)

MAC12D

400

600

800

TO−220AB

CASE 221A−09

STYLE 4

MAC12M

MAC12N

On-State RMS Current

(All Conduction Angles; T = 70°C)

T(RMS)

= D, M, or N

= Assembly Location

= Year

Peak Non-Repetitive Surge Current

(One Full Cycle, 60 Hz, T = 125°C)

100

TSM

WW = Work Week

Circuit Fusing Consideration (t = 8.33 ms)

I t

A sec

= Pb−Free Package

Peak Gate Power

(Pulse Width ≤ 1.0 ms, T = 80°C)

PIN ASSIGNMENT

Main Terminal 1

Main Terminal 2

Gate

Average Gate Power

0.35

G(AV)

(t = 8.3 ms, T = 80°C)

Operating Junction Temperature Range

Storage Temperature Range

−40 to +125

−40 to +150

°C

stg

Main Terminal 2

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

ORDERING INFORMATION

Device

Package

Shipping

1. V

and V

for all types can be applied on a continuous basis. Blocking

MAC12D

TO−220AB

50 Units / Rail

DRM

RRM

voltages shall not be tested with a constant current source such that the

voltage ratings of the devices are exceeded.

MAC12DG

TO−220AB

(Pb−Free)

MAC12M

TO−220AB

50 Units / Rail

MAC12MG

TO−220AB

(Pb−Free)

MAC12N

TO−220AB

50 Units / Rail

MAC12NG

TO−220AB

(Pb−Free)

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2005

Publication Order Number:

December, 2005 − Rev. 4

MAC12/D

MAC12D, MAC12M, MAC12N

THERMAL CHARACTERISTICS

Characteristic

Symbol

Value

Unit

Thermal Resistance,

Junction−to−Case

Junction−to−Ambient

2.2

62.5

°C/W

Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds

260

°C

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted; Electricals apply in both directions)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Peak Repetitive Blocking Current

T = 25°C

T = 125°C

DRM

−

0.01

2.0

(V = Rated V , V

DRM

, Gate Open)

RRM

ON CHARACTERISTICS

Peak On−State Voltage (Note 2) (I = "17 A)

−

1.85

Gate Trigger Current (Continuous dc) (V = 12 V, R = 100 W)

MT2(+), G(+)

MT2(+), G(−)

MT2(−), G(−)

5.0

Hold Current (V = 12 V, Gate Open, Initiating Current = "150 mA)

−

Latch Current (V = 24 V, I = 35 mA)

MT2(+), G(+)

MT2(+), G(−)

MT2(−), G(−)

−

Gate Trigger Voltage (Continuous dc) (V = 12 V, R = 100 W)

MT2(+), G(+)

MT2(+), G(−)

MT2(−), G(−)

0.5

0.78

0.70

0.71

1.5

DYNAMIC CHARACTERISTICS

Rate of Change of Commutating Current

(di/dt)c

6.5

−

A/ms

(V = 400 V, ITM = 4.4A, Commutating dv/dt = 18 V/ms, Gate Open,

T = 125°C, f = 250 Hz, No Snubber)

Critical Rate of Rise of Off−State Voltage

dv/dt

di/dt

250

−

500

−

V/ms

A/ms

(V = Rated V

, Exponential Waveform, Gate Open, T = 125°C)

DRM J

Repetitive Critical Rate of Rise of On-State Current

IPK = 50 A; PW = 40 msec; diG/dt = 200 mA/msec; f = 60 Hz

2. Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.

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MAC12D, MAC12M, MAC12N

Voltage Current Characteristic of Triacs

(Bidirectional Device)

+ Current

Quadrant 1

MainTerminal 2 +

Symbol

Parameter

Peak Repetitive Forward Off State Voltage

Peak Forward Blocking Current

DRM

on state

at V

RRM

Peak Repetitive Reverse Off State Voltage

Peak Reverse Blocking Current

RRM

Maximum On State Voltage

Holding Current

+ Voltage

off state

at V

DRM

Quadrant 3

MainTerminal 2 −

Quadrant Definitions for a Triac

MT2 POSITIVE

(Positive Half Cycle)

(+) MT2

Quadrant II

Quadrant I

(−) I

(+) I

GATE

MT1

REF

−

+ I

(−) MT2

Quadrant III

Quadrant IV

(+) I

(−) I

GATE

MT1

REF

MT1

REF

−

MT2 NEGATIVE

(Negative Half Cycle)

All polarities are referenced to MT1.

With in−phase signals (using standard AC lines) quadrants I and III are used.

http://onsemi.com

−

20 35 50 65 80 95 110 125

−

20 35 50 65 80 95 110 125

−ꢀ40 −ꢀ25 −ꢀ10

20 35 50

65 80 95 110 125

MAC12D, MAC12M, MAC12N

100

1.10

1.00

0.90

0.80

0.70

0.60

0.50

0.40

−ꢀ40 −ꢀ25 −ꢀ10

−

T , JUNCTION TEMPERATURE (°C)

Figure 2. Typical Gate Trigger Voltage

versus Junction Temperature

Figure 1. Typical Gate Trigger Current

versus Junction Temperature

100

MT2 POSITIVE

MT2 NEGATIVE

−

T , JUNCTION TEMPERATURE (°C)

Figure 4. Typical Latching Current

versus Junction Temperature

Figure 3. Typical Holding Current

versus Junction Temperature

125

180°

120°

120°, 90°, 60°, 30°

110

90°

180°

60°

30°

, RMS ON-STATE CURRENT (AMP)

T(AV)

, AVERAGE ON-STATE CURRENT (AMP)

T(RMS)

Figure 5. Typical RMS Current Derating

Figure 6. On-State Power Dissipation

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MAC12D, MAC12M, MAC12N

100

TYPICAL @

T = 25°C

MAXIMUM @ T = 125°C

0.1

MAXIMUM @ T = 25°C

0.01

0.1

100

1000

10000

t, TIME (ms)

Figure 8. Typical Thermal Response

0.1

0.5

1.5

2.5

3.5

4.5

V , INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)

Figure 7. Typical On-State Characteristics

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MAC12D, MAC12M, MAC12N

PACKAGE DIMENSIONS

TO−220AB

CASE 221A−09

ISSUE AA

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

SEATING

PLANE

−T−

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

INCHES

DIM MIN MAX

MILLIMETERS

MIN

14.48

9.66

4.07

0.64

3.61

2.42

2.80

0.46

12.70

1.15

4.83

2.54

2.04

1.15

5.97

0.00

1.15

−−−

MAX

15.75

10.28

4.82

0.88

3.73

2.66

3.93

0.64

14.27

1.52

5.33

3.04

2.79

1.39

6.47

1.27

−−−

0.570

0.380

0.160

0.025

0.142

0.095

0.110

0.018

0.500

0.045

0.190

0.100

0.080

0.045

0.235

0.000

0.045

0.620

0.405

0.190

0.035

0.147

0.105

0.155

0.025

0.562

0.060

0.210

0.120

0.110

0.055

0.255

0.050

−−−

−−− 0.080

2.04

STYLE 4:

PIN 1. MAIN TERMINAL 1

2. MAIN TERMINAL 2

3. GATE

4. MAIN TERMINAL 2

ON Semiconductor and

are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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Phone: 81−3−5773−3850

For additional information, please contact your

local Sales Representative.

MAC12/D

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MAC12DG [ONSEMI]

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