MAC15A4-WC [MOTOROLA]

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MAC15A4-WC
型号: MAC15A4-WC
厂家: MOTOROLA    MOTOROLA
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可控硅 三端双向交流开关
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SEMICONDUCTOR TECHNICAL DATA  
Silicon Bidirectional Triode Thyristors  
. . . designed primarily for full-wave ac control applications, such as solid-state relays,  
motor controls, heating controls and power supplies; or wherever full-wave silicon  
gate controlled solid-state devices are needed. Triac type thyristors switch from a  
blocking to a conducting state for either polarity of applied anode voltage with positive  
or negative gate triggering.  
TRIACs  
15 AMPERES RMS  
200 thru 800 VOLTS  
Blocking Voltage to 800 Volts  
All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity  
and Stability  
Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat  
Dissipation and Durability  
Gate Triggering Guaranteed in Three Modes (MAC15 Series) or Four Modes  
(MAC15A Series)  
MT2  
MT1  
G
CASE 221A-04  
(TO-220AB)  
STYLE 4  
MAXIMUM RATINGS (T = 25°C unless otherwise noted.)  
J
Rating  
Symbol  
Value  
Unit  
(1)  
Peak Repetitive Off-State Voltage  
V
DRM  
Volts  
(Gate Open, T = –40 to +125°C)  
MAC15-4, MAC15A4  
MAC15-6, MAC15A6  
MAC15-8, MAC15A8  
MAC15-10, MAC15A10  
200  
400  
600  
800  
J
Peak Gate Voltage  
V
10  
15  
Volts  
GM  
On-State Current RMS  
Full Cycle Sine Wave 50 to 60 Hz (T = +90°C)  
I
Amps  
T(RMS)  
C
2
2
Circuit Fusing (t = 8.3 ms)  
Peak Surge Current  
(One Full Cycle, 60 Hz, T = +80°C)  
Preceded and followed by rated current  
I t  
93  
A s  
I
150  
Amps  
TSM  
C
Peak Gate Power (T = +80°C, Pulse Width = 2 µs)  
P
20  
0.5  
2
Watts  
Watt  
Amps  
°C  
C
GM  
Average Gate Power (T = +80°C, t = 8.3 ms)  
P
G(AV)  
C
Peak Gate Current  
I
GM  
Operating Junction Temperature Range  
Storage Temperature Range  
T
–40 to +125  
–40 to +150  
J
T
°C  
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, Junction to Case  
R
2
°C/W  
θJC  
1. V  
for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the  
DRM  
voltage ratings of the devices are exceeded.  
REV 1  
3–59  
Motorola Thyristor Device Data  
ELECTRICAL CHARACTERISTICS (T = 25°C, and either polarity of MT2 to MT1 Voltage, unless otherwise noted.)  
C
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
Peak Blocking Current  
(V = Rated V , Gate Open)  
I
DRM  
T
J
T
J
= 25°C  
= 125°C  
10  
2
µA  
mA  
D
DRM  
Peak On-State Voltage  
(I = 21 A Peak; Pulse Width = 1 or 2 ms, Duty Cycle  
V
1.3  
1.6  
Volts  
mA  
TM  
2%)  
TM  
Gate Trigger Current (Continuous dc)  
I
GT  
(V = 12 Vdc, R = 100 Ohms)  
D
L
MT2(+), G(+)  
50  
50  
50  
75  
MT2(+), G(–)  
MT2(–), G(–)  
MT2(–), G(+) “A” SUFFIX ONLY  
Gate Trigger Voltage (Continuous dc)  
V
GT  
Volts  
(V = 12 Vdc, R = 100 Ohms)  
D
L
MT2(+), G(+)  
0.9  
0.9  
1.1  
1.4  
2
2
2
MT2(+), G(–)  
MT2(–), G(–)  
MT2(–), G(+) “A” SUFFIX ONLY  
(V = Rated V , R = 10 k Ohms, T = 110°C)  
2.5  
D
DRM  
L
J
MT2(+), G(+); MT2(–), G(–); MT2(+), G(–)  
MT2(–), G(+) “A” SUFFIX ONLY  
0.2  
0.2  
Holding Current (Either Direction)  
I
6
1.5  
5
40  
mA  
µs  
H
(V = 12 Vdc, Gate Open)  
D
(I = 200 mA)  
T
Turn-On Time  
t
gt  
(V = Rated V = 17 A)  
, I  
= 120 mA, Rise Time = 0.1 µs, Pulse Width = 2 µs)  
D
GT  
DRM TM  
(I  
Critical Rate of Rise of Commutation Voltage  
(V = Rated V , I = 21 A, Commutating di/dt = 7.6 A/ms,  
dv/dt(c)  
V/µs  
D
DRM TM  
Gate Unenergized, T = 80°C)  
C
FIGURE 1 – RMS CURRENT DERATING  
FIGURE 2 – ON-STATE POWER DISSIPATION  
130  
20  
16  
α
= 180  
°
α
α
α
= 30  
= 60  
= 90  
°
°
°
120°  
T
125  
°
C
120  
110  
100  
J
dc  
90°  
α
60  
°
°
12  
α
30  
α
= 180°  
8
4
0
α = CONDUCTION ANGLE  
dc  
α
90  
80  
α
T
125  
°
J
α
= CONDUCTION ANGLE  
0
2
4
6
8
10  
12  
14  
16  
0
2
4
6
8
10  
12  
14  
16  
I
, RMS ON-STATE CURRENT (AMP)  
I
, ON-STATE CURRENT (AMP)  
T(RMS)  
T(RMS)  
3–60  
Motorola Thyristor Device Data  
FIGURE 4 – TYPICAL GATE TRIGGER CURRENT  
FIGURE 3 – TYPICAL GATE TRIGGER VOLTAGE  
1.8  
1.6  
1.4  
50  
OFF-STATE VOLTAGE = 12 V  
OFF-STATE VOLTAGE = 12 V  
30  
20  
QUADRANT 4  
1.2  
1.0  
0.8  
1
10  
1
2
QUADRANT  
3
2
QUADRANTS  
7.0  
5.0  
0.6  
0.4  
3
4
–60  
–40  
0
20  
40  
60  
80  
100  
120 140  
–60 –40  
–20  
0
20  
40  
60  
80  
100 120 140  
–20  
T , JUNCTION TEMPERATURE (  
°
C)  
T , JUNCTION TEMPERATURE (°C)  
J
J
FIGURE 5 – ON-STATE CHARACTERISTICS  
FIGURE 6 – TYPICAL HOLDING CURRENT  
100  
70  
20  
GATE OPEN  
MAIN TERMINAL #1  
POSITIVE  
50  
T
= 25°C  
J
10  
7.0  
5.0  
125°C  
30  
20  
MAIN TERMINAL #2  
POSITIVE  
3.0  
2.0  
10  
7
5
–60 –40 –20  
0
20  
40  
60  
80  
100 120 140  
T , JUNCTION TEMPERATURE (  
°
C)  
J
3
2
FIGURE 7 – MAXIMUM NON-REPETITIVE SURGE CURRENT  
300  
1
0.7  
0.5  
200  
100  
0.3  
0.2  
70  
50  
T
= 80°C  
f = 60 Hz  
C
Surge is preceded and followed by rated current  
30  
0.1  
0.4  
0.8  
1.2  
1.6  
2
2.4  
2.8  
3.2  
3.6  
4
4.4  
1
2
3
5
7
10  
NUMBER OF CYCLES  
v
, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)  
TM  
3–61  
Motorola Thyristor Device Data  
FIGURE 8 – THERMAL RESPONSE  
1
0.5  
0.2  
0.1  
Z
R  
θJC  
θ
JC(t) = r(t)  
0.05  
0.02  
0.01  
0.1  
0.2  
0.5  
1
2
5
10  
20  
50  
100  
200  
500  
1 k  
2 k  
5 k  
10 k  
t, TIME (ms)  
3–62  
Motorola Thyristor Device Data  

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