MAC15A8-WC [MOTOROLA]
600V, 15A, TRIAC, TO-220AB;型号: | MAC15A8-WC |
厂家: | MOTOROLA |
描述: | 600V, 15A, TRIAC, TO-220AB 触发装置 可控硅 三端双向交流开关 |
文件: | 总4页 (文件大小:77K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SEMICONDUCTOR TECHNICAL DATA
Silicon Bidirectional Triode Thyristors
. . . designed primarily for full-wave ac control applications, such as solid-state relays,
motor controls, heating controls and power supplies; or wherever full-wave silicon
gate controlled solid-state devices are needed. Triac type thyristors switch from a
blocking to a conducting state for either polarity of applied anode voltage with positive
or negative gate triggering.
TRIACs
15 AMPERES RMS
200 thru 800 VOLTS
•
•
Blocking Voltage to 800 Volts
All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity
and Stability
•
•
Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
Gate Triggering Guaranteed in Three Modes (MAC15 Series) or Four Modes
(MAC15A Series)
MT2
MT1
G
CASE 221A-04
(TO-220AB)
STYLE 4
MAXIMUM RATINGS (T = 25°C unless otherwise noted.)
J
Rating
Symbol
Value
Unit
(1)
Peak Repetitive Off-State Voltage
V
DRM
Volts
(Gate Open, T = –40 to +125°C)
MAC15-4, MAC15A4
MAC15-6, MAC15A6
MAC15-8, MAC15A8
MAC15-10, MAC15A10
200
400
600
800
J
Peak Gate Voltage
V
10
15
Volts
GM
On-State Current RMS
Full Cycle Sine Wave 50 to 60 Hz (T = +90°C)
I
Amps
T(RMS)
C
2
2
Circuit Fusing (t = 8.3 ms)
Peak Surge Current
(One Full Cycle, 60 Hz, T = +80°C)
Preceded and followed by rated current
I t
93
A s
I
150
Amps
TSM
C
Peak Gate Power (T = +80°C, Pulse Width = 2 µs)
P
20
0.5
2
Watts
Watt
Amps
°C
C
GM
Average Gate Power (T = +80°C, t = 8.3 ms)
P
G(AV)
C
Peak Gate Current
I
GM
Operating Junction Temperature Range
Storage Temperature Range
T
–40 to +125
–40 to +150
J
T
°C
stg
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
2
°C/W
θJC
1. V
for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
DRM
voltage ratings of the devices are exceeded.
REV 1
3–59
Motorola Thyristor Device Data
ELECTRICAL CHARACTERISTICS (T = 25°C, and either polarity of MT2 to MT1 Voltage, unless otherwise noted.)
C
Characteristic
Symbol
Min
Typ
Max
Unit
Peak Blocking Current
(V = Rated V , Gate Open)
I
DRM
T
J
T
J
= 25°C
= 125°C
—
—
—
—
10
2
µA
mA
D
DRM
Peak On-State Voltage
(I = 21 A Peak; Pulse Width = 1 or 2 ms, Duty Cycle
V
—
1.3
1.6
Volts
mA
TM
2%)
TM
Gate Trigger Current (Continuous dc)
I
GT
(V = 12 Vdc, R = 100 Ohms)
D
L
MT2(+), G(+)
—
—
—
—
—
—
—
—
50
50
50
75
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+) “A” SUFFIX ONLY
Gate Trigger Voltage (Continuous dc)
V
GT
Volts
(V = 12 Vdc, R = 100 Ohms)
D
L
MT2(+), G(+)
—
—
—
—
0.9
0.9
1.1
1.4
2
2
2
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+) “A” SUFFIX ONLY
(V = Rated V , R = 10 k Ohms, T = 110°C)
2.5
D
DRM
L
J
MT2(+), G(+); MT2(–), G(–); MT2(+), G(–)
MT2(–), G(+) “A” SUFFIX ONLY
0.2
0.2
—
—
—
—
Holding Current (Either Direction)
I
—
—
—
6
1.5
5
40
—
—
mA
µs
H
(V = 12 Vdc, Gate Open)
D
(I = 200 mA)
T
Turn-On Time
t
gt
(V = Rated V = 17 A)
, I
= 120 mA, Rise Time = 0.1 µs, Pulse Width = 2 µs)
D
GT
DRM TM
(I
Critical Rate of Rise of Commutation Voltage
(V = Rated V , I = 21 A, Commutating di/dt = 7.6 A/ms,
dv/dt(c)
V/µs
D
DRM TM
Gate Unenergized, T = 80°C)
C
FIGURE 1 – RMS CURRENT DERATING
FIGURE 2 – ON-STATE POWER DISSIPATION
130
20
16
α
= 180
°
α
α
α
= 30
= 60
= 90
°
°
°
120°
T
≈
125
°
C
120
110
100
J
dc
90°
α
60
°
°
12
α
30
α
= 180°
8
4
0
α = CONDUCTION ANGLE
dc
α
90
80
α
T
≈
125
°
J
α
= CONDUCTION ANGLE
0
2
4
6
8
10
12
14
16
0
2
4
6
8
10
12
14
16
I
, RMS ON-STATE CURRENT (AMP)
I
, ON-STATE CURRENT (AMP)
T(RMS)
T(RMS)
3–60
Motorola Thyristor Device Data
FIGURE 4 – TYPICAL GATE TRIGGER CURRENT
FIGURE 3 – TYPICAL GATE TRIGGER VOLTAGE
1.8
1.6
1.4
50
OFF-STATE VOLTAGE = 12 V
OFF-STATE VOLTAGE = 12 V
30
20
QUADRANT 4
1.2
1.0
0.8
1
10
1
2
QUADRANT
3
2
QUADRANTS
7.0
5.0
0.6
0.4
3
4
–60
–40
0
20
40
60
80
100
120 140
–60 –40
–20
0
20
40
60
80
100 120 140
–20
T , JUNCTION TEMPERATURE (
°
C)
T , JUNCTION TEMPERATURE (°C)
J
J
FIGURE 5 – ON-STATE CHARACTERISTICS
FIGURE 6 – TYPICAL HOLDING CURRENT
100
70
20
GATE OPEN
MAIN TERMINAL #1
POSITIVE
50
T
= 25°C
J
10
7.0
5.0
125°C
30
20
MAIN TERMINAL #2
POSITIVE
3.0
2.0
10
7
5
–60 –40 –20
0
20
40
60
80
100 120 140
T , JUNCTION TEMPERATURE (
°
C)
J
3
2
FIGURE 7 – MAXIMUM NON-REPETITIVE SURGE CURRENT
300
1
0.7
0.5
200
100
0.3
0.2
70
50
T
= 80°C
f = 60 Hz
C
Surge is preceded and followed by rated current
30
0.1
0.4
0.8
1.2
1.6
2
2.4
2.8
3.2
3.6
4
4.4
1
2
3
5
7
10
NUMBER OF CYCLES
v
, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
TM
3–61
Motorola Thyristor Device Data
FIGURE 8 – THERMAL RESPONSE
1
0.5
0.2
0.1
Z
• R
θJC
θ
JC(t) = r(t)
0.05
0.02
0.01
0.1
0.2
0.5
1
2
5
10
20
50
100
200
500
1 k
2 k
5 k
10 k
t, TIME (ms)
3–62
Motorola Thyristor Device Data
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