MAC15FP [MOTOROLA]
ISOLATED TRIACs THYRISTORS 15 AMPERES RMS 200 thru 800 VOLTS; 隔离双向可控硅晶闸管15安培RMS 200通800伏
| 型号： | MAC15FP |
| 厂家： | 
MOTOROLA |
| 描述： | ISOLATED TRIACs THYRISTORS 15 AMPERES RMS 200 thru 800 VOLTS |
| 文件： | 总4页 (文件大小：84K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMICONDUCTOR TECHNICAL DATA
Silicon Bidirectional Thyristors
. . . designed primarily for full-wave ac control applications, such as solid-state relays,
motor controls, heating controls and power supplies; or wherever full-wave silicon
gate controlled solid-state devices are needed. Triac type thyristors switch from a
blocking to a conducting state for either polarity of applied anode voltage with positive
or negative gate triggering.
ISOLATED TRIACs
THYRISTORS
15 AMPERES RMS
200 thru 800 VOLTS
•
•
Blocking Voltage to 800 Volts
All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity
and Stability
•
•
Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
Gate Triggering Guaranteed in Three Modes (MAC15FP Series) or Four Modes
(MAC15AFP Series)
MT2
MT1
CASE 221C-02
STYLE 3
G
MAXIMUM RATINGS (T = 25°C unless otherwise noted.)
J
Rating
Symbol
Value
Unit
(1)
Repetitive Peak Off-State Voltage (T = –40 to +125°C,
V
DRM
Volts
J
1/2 Sine Wave 50 to 60 Hz, Gate Open)
MAC15-4FP, MAC15A4FP
200
400
600
800
MAC15-6FP, MAC15A6FP
MAC15-8FP, MAC15A8FP
MAC15-10FP, MAC15A10FP
(2)
On-State RMS Current (T = +80°C)
I
15
12
Amps
Amps
C
T(RMS)
Full Cycle Sine Wave 50 to 60 Hz (T = +95°C)
C
Peak Nonrepetitive Surge Current (One Full Cycle, 60 Hz, T = +80°C)
preceded and followed by rated current
I
150
C
TSM
Peak Gate Power (T = +80°C, Pulse Width = 2 µs)
P
20
Watts
Watt
Amps
Volts
Volts
°C
C
GM
Average Gate Power (T = +80°C, t = 8.3 ms)
P
0.5
2
C
G(AV)
Peak Gate Current
Peak Gate Voltage
I
GM
V
GM
10
RMS Isolation Voltage (T = 25°C, Relative Humidity
20%)
V
(ISO)
1500
A
Operating Junction Temperature
Storage Temperature Range
T
–40 to +125
–40 to +150
J
T
°C
stg
1. V
for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
DRM
voltage ratings of the devices are exceeded.
2. The case temperature reference point for all T measurements is a point on the center lead of the package as close as possible to the plastic
C
body.
3–63
Motorola Thyristor Device Data
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
2
Unit
°C/W
°C/W
°C/W
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink
R
θJC
R
2.2 (typ)
60
θCS
Thermal Resistance, Junction to Ambient
R
θJA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)
C
Characteristic
Symbol
Min
Typ
Max
Unit
Peak Blocking Current (Either Direction) T = 25°C
I
—
—
—
—
10
2
µA
mA
J
DRM
(V = Rated V
, T = 125°C, Gate Open)
D
DRM
J
Peak On-State Voltage (Either Direction)
(I = 21 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle
V
—
1.3
1.6
Volts
mA
TM
GT
2%)
TM
Gate Trigger Current (Continuous dc)
I
(Main Terminal Voltage = 12 Vdc, R = 100 Ohms)
L
MT2(+), G(+)
—
—
—
—
—
—
—
—
50
50
50
75
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+) “A” SUFFIX ONLY
Gate Trigger Voltage (Continuous dc)
(Main Terminal Voltage = 12 Vdc, R = 100 Ohms)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+) “A” SUFFIX ONLY
V
GT
Volts
L
—
—
—
—
0.9
0.9
1.1
1.4
2
2
2
2.5
(Main Terminal Voltage = Rated V
MT2(+), G(+); MT2(–), G(–); MT2(+), G(–)
MT2(–), G(+) “A” SUFFIX ONLY
, R = 10 kΩ, T = +110°C)
L J
DRM
0.2
0.2
—
—
—
—
Holding Current (Either Direction)
(Main Terminal Voltage = 12 Vdc, Gate Open,
Initiating Current = 200 mA)
I
—
—
—
6
1.5
5
40
—
—
mA
µs
H
Turn-On Time
t
gt
(V = Rated V
Rise Time = 0.1 µs, Pulse Width = 2 µs)
, I
= 17 A, I = 120 mA,
GT
D
DRM TM
Critical Rate of Rise of Commutation Voltage
dv/dt(c)
V/µs
(V = Rated V = 21 A, Commutating di/dt = 7.6 A/ms,
, I
Gate Unenergized, T = 80°C)
D
DRM TM
C
TriggerdevicesarerecommendedforgatingonTriacs.Theyprovide:
1. Consistent predictable turn-on points.
QUADRANT DEFINITIONS
MT2(+)
2. Simplified circuitry.
QUADRANT II
QUADRANT I
3. Fast turn-on time for cooler, more efficient and reliable operation.
MT2(+), G(–)
MT2(+), G(+)
ELECTRICAL CHARACTERISTICS of RECOMMENDED
BIDIRECTIONAL SWITCHES
Usage
General
G(–)
G(+)
Part Number
MBS4991
6–10 V
MBS4992
7.5–9 V
QUADRANT III
QUADRANT IV
V
S
MT2(–), G(–)
MT2(–), G(+)
I
350 µA Max
0.5 V Max
120 µA Max
0.2 V Max
S
V
–V
S1 S2
MT2(–)
Temperature
Coefficient
0.02%/°C Typ
1. Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant current source for blocking capability such that the
voltage applied exceeds the rated blocking voltage.
3–64
Motorola Thyristor Device Data
TYPICAL CHARACTERISTICS
130
3
2
OFF-STATE VOLTAGE = 12 Vdc
ALL MODES
30
°
°
120
110
100
60
90°
125
°C
1
0.7
0.5
150 to 180
°
°
dc
α
90
80
α
α
= CONDUCTION ANGLE
0.3
0
2
4
6
8
10
12
14
16
–60
–40 –20
0
20
40
60
80
C)
100
120 140
I
, RMS ON-STATE CURRENT (AMP)
T , JUNCTION TEMPERATURE (
°
T(RMS)
J
Figure 4. Typical Gate Trigger Current
Figure 1. RMS Current Derating
20
100
α
= 180
°
70
50
120
°
16
12
T
= 125°C
J
dc
90
60
30
°
T
= 25°C
J
α
125°C
°
°
30
20
α
α
= CONDUCTION ANGLE
8
4
0
10
7
5
0
2
4
6
8
10
12
14
16
I
, RMS ON-STATE CURRENT (AMP)
T(RMS)
Figure 2. On-State Power Dissipation
3
2
3
2
OFF-STATE VOLTAGE = 12 Vdc
ALL MODES
1
0.7
0.5
1
0.3
0.2
0.7
0.5
0.3
–60
0.1
0.4
–40 –20
0
20
40
60
80
C)
100
120
140
0.8
1.2
1.6
2
2.4
2.8
3.2
3.6
4
4.4
T , JUNCTION TEMPERATURE (
°
J
v , INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
T
Figure 3. Typical Gate Trigger Voltage
Figure 5. Maximum On-State Characteristics
3–65
Motorola Thyristor Device Data
3
2
300
200
GATE OPEN
APPLIES TO EITHER DIRECTION
1
100
0.7
0.5
70
50
T
= 80°C
C
f = 60 Hz
SURGE IS PRECEDED AND FOLLOWED BY RATED CURRENT
30
0.3
–60
1
2
3
5
7
10
–40
–20
0
20
40
60
80
100
120 140
NUMBER OF CYCLES
T , JUNCTION TEMPERATURE (
°C)
J
Figure 6. Typical Holding Current
Figure 7. Maximum Nonrepetitive Surge Current
1
0.5
0.2
0.1
Z
= r(t) • R
θJC
θ
JC(t)
0.05
0.02
0.01
0.1
0.2
0.5
1
2
5
10
20
50
100
200
500
1 k
2 k
5 k
10 k
t, TIME (ms)
Figure 8. Thermal Response
3–66
Motorola Thyristor Device Data
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