MAC224A6-BS [MOTOROLA]

TRIAC, 400V V(DRM), 40A I(T)RMS, TO-220, 2 PIN;
MAC224A6-BS
型号: MAC224A6-BS
厂家: MOTOROLA    MOTOROLA
描述:

TRIAC, 400V V(DRM), 40A I(T)RMS, TO-220, 2 PIN

触发装置 可控硅 三端双向交流开关
文件: 总4页 (文件大小:88K)
中文:  中文翻译
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by MAC224/D  
SEMICONDUCTOR TECHNICAL DATA  
Silicon Bidirectional 40 Amperes RMS  
Triode Thyristors  
. . . designed primarily for full-wave ac control applications such as lighting systems,  
heater controls, motor controls and power supplies.  
TRIACs  
40 AMPERES RMS  
200 thru 800 VOLTS  
Blocking Voltage to 800 Volts  
All Diffused and Glass-Passivated Junctions for Parameter Uniformity and Stability  
Gate Triggering Guaranteed in Three Modes (MAC224 Series) or Four Modes  
(MAC224A Series)  
MT2  
MT1  
G
CASE 221A-04  
(TO-220AB)  
STYLE 4  
MAXIMUM RATINGS (T = 25°C unless otherwise noted.)  
J
Rating  
Symbol  
Value  
Unit  
(1)  
Peak Repetitive Off-State Voltage  
V
DRM  
Volts  
(T = –40 to 125°C,  
J
1/2 Sine Wave 50 to 60 Hz, Gate Open)  
MAC224-4, MAC224A4  
MAC224-6, MAC224A6  
MAC224-8, MAC224A8  
MAC224-10, MAC224A10  
200  
400  
600  
800  
(2)  
On-State RMS Current (T = 75°C)  
I
40  
Amps  
Amps  
C
T(RMS)  
(Full Cycle Sine Wave 50 to 60 Hz)  
Peak Non-repetitive Surge Current  
I
350  
TSM  
(One Full Cycle, 60 Hz, T = 125°C)  
J
2
I t  
2
A s  
Circuit Fusing (t = 8.3 ms)  
500  
Peak Gate Current (t  
Peak Gate Voltage (t  
Peak Gate Power (t  
2 µs)  
2 µs)  
2 µs)  
I
±2  
Amps  
Volts  
Watts  
Watts  
°C  
GM  
V
P
±10  
20  
GM  
GM  
Average Gate Power (T = 75°C, t  
8.3 ms)  
P
0.5  
C
G(AV)  
Operating Junction Temperature Range  
Storage Temperature Range  
Mounting Torque  
T
J
–40 to 125  
–40 to 150  
8
T
°C  
stg  
in. lb.  
1. V  
for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source  
(cont.)  
DRM  
such that the voltage ratings of the devices are exceeded.  
2. This device is rated for use in applications subject to high surge conditions. Care must be taken to insure proper heat sinking when thedevice  
is to be used at high sustained currents. (See Figure 1 for maximum case temperatures.)  
Motorola, Inc. 1995  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
1
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
R
R
θJC  
60  
θJA  
ELECTRICAL CHARACTERISTICS (T = 25°C and either polarity of MT2 to MT1 voltage unless otherwise noted.)  
C
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
Peak Blocking Current  
(Rated V , Gate Open)  
I
DRM  
T
J
T
J
= 25°C  
= 125°C  
10  
2
µA  
mA  
DRM  
Peak On-State Voltage  
(I = 56 A Peak, Pulse Width  
V
1.4  
1.85  
Volts  
mA  
TM  
2 ms, Duty Cycle  
2%)  
TM  
Gate Trigger Current (Continuous dc)  
(V = 12 V, R = 100 )  
I
GT  
D
L
MT2(+), G(+); MT2(+), G(–); MT2(+), G(–)  
MT2(–), G(+) “A” SUFFIX ONLY  
25  
40  
50  
75  
Gate Trigger Voltage (Continuous dc)  
V
Volts  
Volts  
GT  
(V = 12 V, R = 100 )  
D
L
MT2(+), G(+); MT2(–), G(–); MT(+), G(–)  
MT2(–), G(+) “A” SUFFIX ONLY  
1.1  
1.3  
2
2.5  
Gate Non-Trigger Voltage  
V
GD  
(V = Rated V  
, T = 125°C, R = 10 k)  
D
DRM  
J L  
MT2(+), G(+); MT2(–), G(–); MT(+), G(–)  
MT2(–), G(+)  
0.2  
0.2  
Holding Current (V = 12 Vdc, Gate Open)  
D
I
30  
75  
mA  
H
Gate Controlled Turn-On Time  
t
1.5  
µs  
gt  
(V = Rated V = 56 A Peak, I = 200 mA)  
, I  
D
DRM TM G  
Critical Rate of Rise of Off-State Voltage  
(V = Rated V , Exponential Waveform, T = 125°C)  
dv/dt  
50  
5
V/µs  
V/µs  
D
DRM  
Critical Rate of Rise of Commutation Voltage  
(V = Rated V , I = 56 A Peak, Commutating  
C
dv/dt(c)  
D
DRM TM  
di/dt = 20.2 A/ms, Gate Unenergized, T = 75°C)  
C
FIGURE 2 – ON-STATE POWER DISSIPATION  
FIGURE 1 – RMS CURRENT DERATING  
60  
54  
48  
42  
36  
30  
24  
18  
12  
125  
120  
115  
110  
105  
100  
95  
90  
85  
6.0  
0
80  
75  
0
5.0  
10  
15  
20  
25  
30  
35  
40  
0
5.0  
10  
15  
20  
25  
30  
35  
40  
I
, RMS ON-STATE CURRENT (AMPS)*  
I
, RMS ON-STATE CURRENT (AMPS)*  
T(RMS)  
T(RMS)  
*This device is rated for use in applications subject to high surge conditions. Care must be taken to insure proper heat sinking when the device is to  
be used at high sustained currents.  
2
Motorola Thyristor Device Data  
FIGURE 4 – GATE TRIGGER VOLTAGE  
FIGURE 3 – GATE TRIGGER CURRENT  
3.0  
2.0  
3.0  
2.0  
V
R
= 12 V  
= 100 Ω  
V
R
= 12 V  
= 100 Ω  
D
L
D
L
1.0  
0.5  
1.0  
0.5  
0.3  
0.2  
0.3  
0.2  
0.1  
–60 –40  
0.1  
–60 –40  
–20  
0
20  
40  
60  
80  
100  
120  
140  
–20  
0
20  
40  
60  
80  
100  
120 140  
T , JUNCTION TEMPERATURE (  
°C)  
T , JUNCTION TEMPERATURE (  
°C)  
J
J
FIGURE 6 – TYPICAL ON-STATE CHARACTERISTICS  
FIGURE 5 – HOLDING CURRENT  
1000  
100  
2.0  
I
= 200 mA  
TM  
Gate Open  
T
= 25°C  
1.0  
0.5  
J
10  
0.3  
0.2  
1.0  
0.1  
–60  
0
1.0  
2.0  
3.0  
–40  
–20  
0
20  
40  
60  
80  
100  
120  
140  
V
, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)  
T , JUNCTION TEMPERATURE (  
°C)  
TM  
J
FIGURE 7 – THERMAL RESPONSE  
1
0.5  
0.2  
0.1  
Z
= r(t) R  
θJC  
θ
JC(t)  
0.05  
0.02  
0.01  
0.1  
0.2  
0.5  
1
2
5
20  
50  
100  
200  
500  
1 k  
2 k  
5 k  
10 k  
t, TIME (ms)  
3
Motorola Thyristor Device Data  
PACKAGE DIMENSIONS  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
SEATING  
PLANE  
2. CONTROLLING DIMENSION: INCH.  
3. DIMENSION Z DEFINES A ZONE WHERE ALL  
BODY AND LEAD IRREGULARITIES ARE  
ALLOWED.  
–T–  
B
F
C
T
INCHES  
MIN  
MILLIMETERS  
S
DIM  
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
MAX  
0.620  
0.405  
0.190  
0.035  
0.147  
0.105  
0.155  
0.022  
0.562  
0.055  
0.210  
0.120  
0.110  
0.055  
0.255  
0.050  
–––  
MIN  
14.48  
9.66  
4.07  
0.64  
3.61  
2.42  
2.80  
0.36  
12.70  
1.15  
4.83  
2.54  
2.04  
1.15  
5.97  
0.00  
1.15  
–––  
MAX  
15.75  
10.28  
4.82  
0.88  
3.73  
2.66  
3.93  
0.55  
14.27  
1.39  
5.33  
3.04  
2.79  
1.39  
6.47  
1.27  
–––  
0.570  
0.380  
0.160  
0.025  
0.142  
0.095  
0.110  
0.014  
0.500  
0.045  
0.190  
0.100  
0.080  
0.045  
0.235  
0.000  
0.045  
–––  
4
3
STYLE 4:  
PIN 1. MAIN TERMINAL 1  
Q
A
K
2. MAIN TERMINAL 2  
3. GATE  
4. MAIN TERMINAL 2  
1
2
U
H
Z
R
L
T
U
V
V
J
G
Z
0.080  
2.04  
D
N
CASE 221A-04  
(TO–220AB)  
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representationorguaranteeregarding  
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and  
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different  
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does  
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in  
systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of  
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such  
unintendedor unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless  
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.  
Motorola and  
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.  
Literature Distribution Centers:  
USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036.  
EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England.  
JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan.  
ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong.  
MAC224/D  

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