MAC320A8FP [MOTOROLA]
ISOLATED TRIACs THYRISTORS 20 AMPERES RMS 200 thru 800 VOLTS; 隔离双向可控硅晶闸管20安培RMS 200通800伏
| 型号： | MAC320A8FP |
| 厂家： | 
MOTOROLA |
| 描述： | ISOLATED TRIACs THYRISTORS 20 AMPERES RMS 200 thru 800 VOLTS |
| 文件： | 总6页 (文件大小：121K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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by MAC320FP/D
SEMICONDUCTOR TECHNICAL DATA
Silicon Bidirectional Thyristors
. . . designed primarily for full-wave ac control applications, such as solid-state relays,
motor controls, heating controls and power supplies; or wherever full-wave silicon
gate controlled solid-state devices are needed. Triac type thyristors switch from a
blocking to a conducting state for either polarity of applied anode voltage with positive
or negative gate triggering.
ISOLATED TRIACs
THYRISTORS
20 AMPERES RMS
200 thru 800 VOLTS
•
•
Blocking Voltage to 800 Volts
All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity
and Stability
•
•
Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
Gate Triggering Guaranteed in Three Modes (MAC320FP Series) or
Four Modes (MAC320AFP Series)
MT2
MT1
CASE 221C-02
STYLE 3
G
MAXIMUM RATINGS (T = 25°C unless otherwise noted.)
C
Rating
Symbol
Value
Unit
(1)
Peak Repetitive Off-State Voltage (T = –40 to +125°C,
V
DRM
Volts
J
1/2 Sine Wave 50 to 60 Hz, Gate Open)
MAC320-4FP, MAC320A4FP
MAC320-6FP, MAC320A6FP
MAC320-8FP, MAC320A8FP
MAC320-10FP, MAC320A10FP
200
400
600
800
Peak Gate Voltage
On-State RMS Current (T = +75°C, Full Cycle Sine Wave 50 to 60 Hz)
V
10
20
Volts
Amps
Amps
GM
(2)
I
C
T(RMS)
Peak Nonrepetitive Surge Current (One Full Cycle, 60 Hz, T = +75°C,
I
150
C
TSM
preceded and followed by rated current)
Peak Gate Power (T = +75°C, Pulse Width = 2 µs)
P
20
0.5
Watts
Watt
Amps
Volts
°C
C
GM
Average Gate Power (T = +75°C, t = 8.3 ms)
P
G(AV)
C
Peak Gate Current
I
2
GM
RMS Isolation Voltage (T = 25°C, Relative Humidity
20%)
V
(ISO)
1500
A
Operating Junction Temperature
Storage Temperature Range
T
–40 to +125
–40 to +150
J
T
°C
stg
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
1.8
Unit
°C/W
°C/W
°C/W
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink
Thermal Resistance, Junction to Ambient
R
θJC
R
2.2 (typ)
60
θCS
R
θJA
1. V
for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
DRM
voltage ratings of the devices are exceeded.
2. The case temperature reference point for all T measurements is a point on the center lead of the package as close as possible to the
C
plastic body.
Motorola, Inc. 1995
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)
C
Characteristic
Symbol
Min
Typ
Max
Unit
Peak Blocking Current
I
DRM
(V = Rated V , Gate Open)
DRM
T
J
T
J
= 25°C
= +125°C
—
—
—
—
10
2
µA
mA
D
Peak On-State Voltage (Either Direction)
(I = 28 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle
V
—
1.4
1.7
Volts
mA
TM
2%)
TM
Peak Gate Trigger Current
I
GT
(Main Terminal Voltage = 12 Vdc, R = 100 Ohms
L
Minimum Gate Pulse Width = 2 µs)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+) “A” SUFFIX ONLY
—
—
—
—
—
—
—
—
50
50
50
75
Peak Gate Trigger Voltage
(Main Terminal Voltage = 12 Vdc, R = 100 Ohms
V
GT
Volts
L
Minimum Gate Pulse Width = 2 µs)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+) “A” SUFFIX ONLY
—
—
—
—
0.9
0.9
1.1
1.4
2
2
2
2.5
(Main Terminal Voltage = Rated V
MT2(+), G(+); MT2(+), G(–)
, R = 10 , T = +110°C)
DRM
L
J
0.2
0.2
—
—
—
—
MT2(–), G(–); MT2(–), G(+) “A” SUFFIX ONLY
Holding Current (Either Direction)
(Main Terminal Voltage = 12 Vdc, Gate Open,
Initiating Current = 200 mA)
I
—
—
—
6
1.5
5
40
10
—
mA
µs
H
Turn-On Time
t
gt
(V = Rated V
Rise Time = 0.1 µs, Pulse Width = 2 µs)
, I
= 28 A, I = 120 mA,
GT
D
DRM TM
Critical Rate of Rise of Commutation Voltage
dv/dt(c)
V/µs
(V = Rated V = 28 A, Commutating di/dt = 10 A/ms,
, I
Gate Unenergized, T = +75°C)
D
DRM TM
C
TYPICAL CHARACTERISTICS
130
40
35
30
25
20
15
10
5.0
0
α
120
110
100
90
α
= 30
°
dc
α
60
°
180°
90
°
90°
α
= Conduction
Angle
80
α
180
°
60°
70
dc
18
α
α
= 30°
60
α
= Conduction
Angle
50
0
2.0
4.0
I
6.0
8.0
10
12
14
16
20
0
2.0
4.0
I
6.0
8.0
10
12
14
16
18
20
, RMS ON-STATE CURRENT (AMP)
, RMS ON-STATE CURRENT (AMP)
T(RMS)
T(RMS)
Figure 1. RMS Current Derating
Figure 2. On-State Power Dissipation
2
Motorola Thyristor Device Data
3
2
100
70
OFF-STATE VOLTAGE = 12 Vdc
ALL MODES
50
T
= 25°C
J
125°C
30
20
1
0.7
0.5
10
7
5
0.3
–60 –40
–20
0
20
40
60
80
100
120 140
T , JUNCTION TEMPERATURE (
°
C)
J
3
2
Figure 3. Typical Gate Trigger Voltage
3
2
OFF-STATE VOLTAGE = 12 Vdc
ALL MODES
1
0.7
0.5
1
0.7
0.5
0.3
0.2
0.3
0.1
–60 –40
–20
0
20
40
60
80
100
120 140
0.4
0.8
v
1.2
1.6
2
2.4
2.8
3.2
3.6
4
4.4
T , JUNCTION TEMPERATURE (
°
C)
, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
J
TM
Figure 4. Typical Gate Trigger Current
Figure 5. Maximum On-State Characteristics
3
Motorola Thyristor Device Data
300
200
3
2
GATE OPEN
APPLIES TO EITHER DIRECTION
1
100
70
0.7
0.5
50
T
= 80°C
C
f = 60 Hz
SURGE IS PRECEDED AND FOLLOWED BY RATED CURRENT
30
0.3
–60
1
2
3
5
7
10
–40
–20
0
20
40
60
80
100
120
140
T , JUNCTION TEMPERATURE (
°C)
NUMBER OF CYCLES
J
Figure 7. Maximum Nonrepetitive Surge Current
Figure 6. Typical Holding Current
1
0.5
0.2
0.1
Z
= r(t) • R
θJC
θ
JC(t)
0.05
0.02
0.01
0.1
0.2
0.5
1
2
5
10
20
50
100
200
500
1 k
2 k
5 k
10 k
t, TIME (ms)
Figure 8. Thermal Response
4
Motorola Thyristor Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
SEATING
–T–
PLANE
Y14.5M, 1982.
–B–
P
2. CONTROLLING DIMENSION: INCH.
3. LEAD DIMENSIONS UNCONTROLLED WITHIN
DIMENSION Z.
F
C
S
N
INCHES
MILLIMETERS
DIM
A
B
C
D
E
MIN
MAX
0.700
0.408
0.195
0.040
0.355
0.150
MIN
17.28
9.86
4.45
0.64
8.64
3.56
MAX
17.78
10.36
4.95
1.01
9.01
E
0.680
0.388
0.175
0.025
0.340
0.140
A
K
STYLE 3:
PIN 1. MT 1
Q
H
1
2 3
2. MT 2
3. GATE
F
3.81
–Y–
G
H
J
K
L
N
P
Q
R
S
0.100 BSC
2.54 BSC
0.110
0.018
0.500
0.045
0.049
0.270
0.480
0.090
0.105
0.070
0.155
0.028
0.550
0.070
–––
0.290
0.500
0.120
0.115
0.090
2.80
0.46
12.70
1.15
1.25
6.86
12.20
2.29
2.67
1.78
3.93
0.71
13.97
1.77
–––
7.36
12.70
3.04
2.92
2.28
Z
J
L
G
R
D 3 PL
Z
M
M
0.25 (0.010)
B
Y
CASE 221C-02
5
Motorola Thyristor Device Data
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
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