MC33154P [MOTOROLA]
SINGLE IGBT HIGH CURRENT GATE DRIVER; 单IGBT大电流栅极驱动器
| 型号： | MC33154P |
| 厂家： | 
MOTOROLA |
| 描述： | SINGLE IGBT HIGH CURRENT GATE DRIVER |
| 文件： | 总12页 (文件大小：201K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Order this document by MC33154/D
The MC33154 is specifically designed as an IGBT driver for high powered
applications including ac induction motor control, brushless dc motor control,
and uninterruptable power supplies. This device also offers a cost effective
solution for driving power MOSFETS and Bipolar transistors.
Device protections include the choice of desaturation or overcurrent
sensing and an undervoltage lockout to provide assurance of proper gate
drive voltage.
SINGLE IGBT HIGH CURRENT
GATE DRIVER
SEMICONDUCTOR
TECHNICAL DATA
These devices are available in dual–in–line and surface mount packages
and include the following features:
• High Current Output Stage: 4.0 A Source –2.0 A Sink
• Protection Circuits for Both Conventional and Sense IGBT’s
• Current Source for Blanking Timing
8
• Protection Against Over–Current and Short Circuit
• Under–Voltage Lockout Optimized for IGBT’s
• Negative Gate Drive Capability
1
P SUFFIX
PLASTIC PACKAGE
CASE 626
Simplified Block Diagram
8
1
D SUFFIX
PLASTIC PACKAGE
CASE 751
Short Circuit
Comparator
V
CC
Short Circuit
Latch
S
Fault
Output
V
(SO–8)
CC
Q
R
7
Over–Current
Comparator
Current
Sense
1 Input
Over–Current
Latch
130 mV
V
EE
S
Q
R
65 mV
CC
PIN CONNECTIONS
V
V
EE
V
Kelvin
Gnd
V
CC
CC
2
8
V
CC
1.0 mA
Current Sense
Input
Fault Blanking/
Desaturation Input
6
3
1
2
3
4
8
7
6
5
Fault
Blanking/
Desaturation
Input
V
EE
Kelvin Gnd
Fault Output
6.5 V
Desat./Blank.
V
EE
Comparator
V
EE
V
V
CC
EE
V
CC
Gate Drive
Output
Output
Input
V
CC
Stage
Gate
Drive
Output
Input
(Top View)
V
4
CC
5
Under
Voltage
Lockout
V
EE
ORDERING INFORMATION
Tested Operating
V
V
EE
EE
12 V/
11 V
Temperature Range
Device
Package
T
= –40° to +85°C
MC33154D
MC33154P
Plastic SO–8
A
T
A
= –40° to +85°C Plastic DIP–8
This document contains information on a new product. Specifications and information herein
Motorola, Inc. 1997
Rev 1
are subject to change without notice.
MC33154
MAXIMUM RATINGS
Rating
Power Supply Voltage
to V ; V ≤ KGND ≤ V
Symbol
Value
Unit
V
V
CC
V
– V
20
20
EE EE
CC
CC
EE
EE
Kelvin Ground to V
(Note 1)
KGnd – V
EE
Input
Current Sense Input
V
V
EE
–0.3 to V
CC
V
V
V
A
in
V
–0.3 to V
CS
BD
CC
CC
Fault Blanking/Desaturation Input
V
–0.3 to V
Gate Drive Output
Source Current
Sink Current
I
O
4.0
2.0
1.0
Diode Clamp Current
Fault Output
Source Current
Sink Current
I
mA
FO
25
10
Power Dissipation and Thermal Characteristics
D Suffix SO–8 Package, Case 751
Maximum Power Dissipation @ T = 50°C
Thermal Resistance, Junction–to–Air
P Suffix DIP–8 Package, Case 626
P
0.56
180
W
°C/W
A
D
R
θJA
Maximum Power Dissipation @ T = 50°C
P
D
1.0
W
A
Thermal Resistance, Junction–to–Air
Operating Junction Temperature
Operating Ambient Temperature
Storage Temperature Range
R
100
°C/W
θJA
T
150
°C
°C
°C
J
T
–40 to +85
A
T
–65 to +150
stg
.
NOTES: 1. Kelvin Ground must always be between V
and V
EE
CC
2. ESD data available upon request.
ELECTRICAL CHARACTERISTICS (V
= 20 V, V
= 0 V, Kelvin Gnd connected to V . For typical values
EE EE
CC
T
= 25°C, for min/max values T is the operating ambient temperature range that applies [Note 1] unless otherwise noted.)
A
A
Characteristic
Symbol
Min
Typ
Max
Unit
INPUT
Input Threshold Voltage
V
High State (Logic 1) @ T = 25°C
V
9.0
7.0
10.5
11.6
–
A
IH
High State (Logic 1) @ T = –40 to +85°C
A
Low State (Logic 0)
V
4.5
IL
Input Current — High State (V = 10.5 V)
IH
I
I
–
–
100
50
500
100
µA
IH
IL
Input Current — Low State (V = 4.5 V)
IL
GATE DRIVE OUTPUT
Output Voltage
V
Low State (I
= 1.0 A)
V
–
17
2.0
18
2.5
–
Sink
High State (I
OL
= 2.0 A)
V
OH
Source
Output Pull–Down Resistor
R
–
100
200
kΩ
PD
FAULT OUTPUT
Output Voltage
V
Low State (I
= 5.0 mA)
V
–
17
0.2
18.3
1.0
–
Sink
High State (I
FL
= 20 mA)
V
FH
Source
SWITCHING CHARACTERISTICS
Propagation Delay (50% Input to 50% Output C = 15 nF)
L
Logic Input to Drive Output Rise
Logic Input to Drive Output Fall
ns
t
t
–
–
200
120
300
300
PLH (in/out)
PHL (in/out)
Drive Output Rise Time (10% to 90%) C = 15 nF
t
–
–
80
80
200
200
ns
ns
µs
L
r
Drive Output Fall Time (90% to 10%) C = 15 nF
L
t
f
Propagation Delay
Current Sense Input to Drive Output
t
–
0.4
1.0
P(OC)
NOTE: 1. Low duty cycle pulse techniques are used during test to maintain the junction temperature as close to ambient as possible.
= –40°C for MC33154 = +85°C for MC33154
T
T
high
low
2
MOTOROLA ANALOG IC DEVICE DATA
MC33154
ELECTRICAL CHARACTERISTICS (continued) (V
CC
= 20 V, V
= 0 V, Kelvin Gnd connected to V . For typical values
EE
EE
T
= 25°C, for min/max values T is the operating ambient temperature range that applies [Note 1] unless otherwise noted.)
A
A
Characteristic
Symbol
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS
Fault Blanking/Desaturation Input to Drive Output
t
–
0.4
1.0
P(FLT)
UVLO
Start–up Voltage
V
11.3
10.4
12
11
12.6
11.7
V
V
CC start
Disable Voltage
V
CC dis
COMPARATORS
Over Current Trip Voltage (V
Pin8
> 7.0 V)
> 7.0 V)
V
50
100
6.0
–
65
130
6.5
80
mV
mV
V
SOC
Short Current Trip Voltage (V
V
160
7.0
–10
Pin8
SSC
Desaturation Threshold (V
> 100 mV)
V
th(FLT)
Pin1
Sense Input Current (V = 0 V)
I
SI
–1.4
A
SI
FAULT BLANKING/DESATURATION INPUT
Current Source (V = 0 V, V ≥ 10.5 V)
I
chg
0.8
0.8
1.0
2.5
1.2
–
mA
mA
Pin8
Pin4
= 15 V, V
Discharge Current (V
= 0 V)
I
dschg
Pin8
Pin4
TOTAL DEVICE
Power Supply Current
Standby (V = 0 V, Output Open)
I
mA
CC
–
–
9.0
15
14
25
Pin 4
Operating (C = 15 nF, f = 20 kHz)
L
in
NOTE: 1. Low duty cycle pulse techniques are used during test to maintain the junction temperature as close to ambient as possible.
= –40°C for MC33154 = +85°C for MC33154
T
T
high
low
Figure 2. Output Voltage versus Input Voltage
Figure 1. Input Current versus Logic Input Voltage
200
20
18
180
160
T
V
= 25°C
A
= 20 V
16
CC
140
120
100
80
14
12
10
8.0
6.0
4.0
60
40
T
V
= 25°C
A
= 20 V
CC
20
2.0
0
0
12
0
2.0
4.0
6.0
8.0
10
12
14
16
18
20
4.0
5.0
6.0
7.0
V , INPUT VOLTAGE (V)
in
8.0
9.0
10
11
V
, INPUT VOLTAGE (V)
in
3
MOTOROLA ANALOG IC DEVICE DATA
MC33154
Figure 4. Input Thresholds versus Temperature
Figure 3. Input Threshold Voltage
versus Supply Voltage
10
9.5
9.0
8.5
8.0
7.5
7.0
12
11
V
= 20 V
CC
V
IH
10
T
= 25°C
A
9.0
8.0
7.0
6.0
V
IH
V
IL
V
IL
5.0
4.0
6.5
6.0
14
15
16
17
18
19
20
–60 –40 –20
0
20
40
60
80
100
120 140
V
, SUPPLY VOLTAGE (V)
T , AMBIENT TEMPERATURE (°C)
CC
A
Figure 5. Drive Output Low State Voltage
versus Temperature
Figure 6. Drive Output Low State Voltage
versus Sink Current
2.5
2.0
1.5
1.0
2.0
1.8
I
= 1.0 A
Sink
1.6
1.4
1.2
1.0
0.8
0.6
0.4
T
= 25°C
= 20 V
A
I
= 500 mA
Sink
V
CC
I
= 250 mA
Sink
0.5
0
0.2
0
V
= 20 V
CC
–60 –40 –20
0
20
40
60
80
100
120 140
0
0.1
0.2
0.3
I , OUTPUT SINK CURRENT (A)
sink
0.4
0.5
0.6
0.7
0.8
0.9
1.0
T , AMBIENT TEMPERATURE (
°
C)
A
Figure 7. Drive Output High State Voltage
versus Temperature
Figure 8. Output Saturation High
versus Output Current
19.2
19.0
18.8
18.6
18.4
18.2
18.0
17.8
20
T
V
= 25°C
I
= 500 mA
A
Source
= 20 V
CC
19
18
17
I
= 1.0 A
= 2.0 A
Source
I
Source
16
15
17.6
17.4
V
= 20 V
CC
–60 –40 –20
0
20
40
60
80
100
120 140
0
0.5
1.0
1.5
I , OUTPUT CURRENT (A)
O
2.0
2.5
3.0
3.5
4.0
T , AMBIENT TEMPERATURE (
°C)
A
4
MOTOROLA ANALOG IC DEVICE DATA
MC33154
Figure 10. Fault Output Voltage
Figure 9. Drive Output Voltage
versus Current Sense Input Voltage
versus Current Sense Input Voltage
20
18
20
18
T
= 25°C
= 20 V
T
V
= 25°C
= 20 V
A
A
16
16
V
CC
CC
14
14
12
12
10
10
8.0
6.0
4.0
8.0
6.0
4.0
2.0
0
2.0
0
50
55
V
60
65
70
75
80
100
105
110
, CURRENT SENSE INPUT VOLTAGE (mV)
S
115
120
125
130
135
140
, CURRENT SENSE INPUT VOLTAGE (mV)
V
S
Figure 11. Overcurrent Threshold Voltage
versus Temperature
Figure 12. Short Circuit Threshold Voltage
versus Temperature
160
150
140
130
120
80
75
70
65
60
55
50
110
100
–60 –40 –20
0
20
40
60
80
100
120 140
–60 –40 –20
0
20
40
60
80
100
120 140
T , AMBIENT TEMPERATURE (
°C)
T , AMBIENT TEMPERATURE (°C)
A
A
Figure 13. Sense Input Current versus
Sense Voltage
Figure 14. Output Voltage versus
Blanking/Desaturation Voltage
0.2
0
20
18
T
V
= 25°C
16
14
A
= 20 V
CC
–0.2
–0.4
–0.6
–0.8
T
= 25°C
A
12
10
8.0
6.0
4.0
–1.0
–1.2
2.0
0
0
2.0
4.0
V
6.0
8.0
10
12
14
16
6.30 6.35
6.40
, BLANKING/DESATURATION INPUT (V)
BD
6.45
6.50
6.55
6.60
6.65 6.70
, CURRENT SENSE INPUT (V)
V
S
5
MOTOROLA ANALOG IC DEVICE DATA
MC33154
Figure 16. Blanking/Desaturation Threshold
versus Supply Voltage
Figure 15. Desaturation Threshold
versus Temperature
7.0
6.9
6.8
6.7
6.6
6.5
6.4
6.3
6.2
6.520
6.515
6.510
6.505
6.500
6.495
6.490
T
= 25°C
A
6.485
6.480
6.1
6.0
–60 –40 –20
0
20
40
60
80
100 120
140
12
13
14
15
16
17
18
19
20
T , AMBIENT TEMPERATURE (
°C)
V , SUPPLY VOLTAGE (V)
CC
A
Figure 17. Blanking Current Source
versus Temperature
Figure 18. Blanking Current versus Supply Voltage
–0.80
–0.85
–1.20
–1.15
–1.10
–1.05
–1.00
–0.95
–0.90
–0.90
–0.95
–1.00
T
V
= 25°C
A
–1.05
–1.10
= 20 V
BD
–1.15
–1.20
–0.85
–0.80
–60 –40 –20
0
20
40
60
80
100 120 140
12
13
14
15
16
17
18
19
20
T , AMBIENT TEMPERATURE (
°C)
V , SUPPLY VOLTAGE (V)
CC
A
Figure 19. Blanking Current versus
Blanking/Desaturation Voltage
Figure 20. Blanking Discharge Current versus
Blanking/Desaturation Voltage
–1.5
–1.0
–0.5
0
6.0
5.0
4.0
3.0
2.0
1.0
0
T
= 25°C
= 20 V
A
T
= 25°C
= 20 V
A
V
CC
V
CC
0.5
1.0
1.5
2.0
–1.0
–2.0
0
2.0
4.0
6.0
8.0
10
12
14
16
18
20
0
2.0
4.0
6.0
8.0
10
12
14
16
18
20
V
, FAULT BLANKING/DESATURATION INPUT (V)
V , FAULT BLANKING/DESATURATION INPUT (V)
BD
BD
6
MOTOROLA ANALOG IC DEVICE DATA
MC33154
Figure 22. Fault Output Voltage High versus
Fault Output Current
Figure 21. Fault Output Voltage Low versus
Fault Output Current
0.40
0.35
0.30
0.25
0.20
0.15
0.10
20.0
19.8
19.6
19.4
19.2
19.0
18.8
18.6
18.4
T
= 25°C
= 20 V
A
V
CC
T
= 25°C
= 20 V
A
V
CC
0.05
0
18.2
18.0
0
2.0
4.0
6.0
8.0
10
0
5.0
I , FAULT OUTPUT SOURCE CURRENT (mA)
fo
10
15
20
I
, FAULT OUTPUT SOURCE CURRENT (mA)
fo
Figure 23. UVLO Start Threshold
versus Temperature
Figure 24. Standby Supply Current versus
Supply Voltage
12.5
12.0
11.5
11.0
10
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
V
CC start
T
= 25°C
A
V
CC dis
10.5
10.0
1.0
0
–60 –40 –20
0
20
40
60
80
100 120 140
0
5.0
10
, SUPPLY VOLTAGE (V)
15
20
T , AMBIENT TEMPERATURE (
°C)
V
CC
A
Figure 25. Supply Current versus Input Frequency
40
35
30
25
20
15
C
= 15 nF
load
T
V
= 25°C
A
= 20 V
CC
C
= 10 nF
load
10
5.0
0
C
= 1.0 nF
load
1.0
10
100
f
, INPUT FREQUENCY (kHz)
in
7
MOTOROLA ANALOG IC DEVICE DATA
MC33154
OPERATING DESCRIPTION
While IGBTs exhibit a fixed minimum loss due to minority
GATE DRIVE
carrier recombination, a slow gate drive will dominate the
turn–off losses. This is particularly true for fast IGBTs. It is
also possible to turn–off an IGBT too fast. Excessive turn–off
speed will result in large overshoot voltages. Normally the
turn–off resistor is a small fraction of the turn–on resistor.
The MC33154 has a bipolar totem pole output. The output
stage is capable of sourcing 4.0 amps and sinking 2.0 amps
peak. The output stage also contains a pull down resistor to
ensure that the IGBT is off when the gate drive power is not
applied.
In a PWM inverter, IGBTs are used in a half–bridge
configuration. Thus, at least one device is always off. While
the IGBT is in the off–state it will be subjected to changes in
voltage caused by the other devices. This is particularly a
problem when the opposite transistor turns on.
When the lower device is turned on clearing the upper
diode, the turn–on dv/dt of the lower device appears across
the collector emitter of the upper device. To eliminate
shoot–through currents it is necessary to provide a low sink
impedance to the device in the off–state. Fortunately, the
turn–off resistor can be made small enough to hold off the
device under commutation without causing excessively fast
turn–off speeds.
Controlling Switching Times
The most important design aspect of an IGBT gate drive is
optimization of the switching characteristics. Switching
characteristics are especially important in motor control
applications in which PWM transistors are used in a bridge
configuration. In these applications, the gate drive circuit
components should be selected to optimize turn–on, turn–off,
and off–state impedance.
A single resistor may be used to control both turn–on and
turn–off and shown in Figure 26. However, the resistor value
selected must be a compromise in turn–on abruptness and
turn–off losses. Using a single resistor is normally suitable
only for very low frequency PWM.
Figure 26. Using a Single Gate Resistor
V
CC
IGBT
R
g
Output
5
Sometimes a negative bias voltage is used in the
off–state. This is a practice carried over from bipolar
Darlington drives. A negative bias is generally not required
for IGBTs. However, a negative bias will reduce the possibility
Kelvin Gnd
V
EE
2
of shoot–through. The MC33154 has separate pins for V
and Kelvin Gnd. This permits operation using a +15/–5 volt
supply.
EE
AnoptimizedgatedriveoutputstageisshowninFigure27.
This circuit allows turn–on and turn–off to be optimized
separately.
INTERFACING WITH OPTOISOLATORS
Isolated Input
Figure 27. Using Separate Resistors
for Turn–On and Turn–Off
The MC33154 may be used with an optically isolated
input. The optoisolator can be used to provide level shifting
and if desired, isolation from AC line voltages. An optoisolator
with a very high dv/dt capability should be used, such as the
Hewlett–Packard HCPL0453. The IGBT gate turn–on
resistor should be set large enough to ensure that the opto’s
dv/dt capability is not exceeded. Like most optoisolators, the
HCPL0453 has an active low open–collector output. Thus,
when the LED is ON, the output will be low. The MC33154
has a non–inverting input pin to interface directly with an
optoisolator using a pull up resistor.
V
CC
IGBT
R
on
Output
D
R
off
off
5
Kelvin Gnd
V
EE
2
Optoisolator Output Fault
The turn–on resistor R provides control over the IGBT
on
The MC33154 has an active high fault output. The fault
output may be easily interfaced to an optoisolator. While it is
important that all faults are properly reported, it is equally
important that no false signals are propagated. Again a high
dv/dt optoisolator should be used.
turn–on speed. In motor control circuits, the resistor sets the
turn–on di/dt that controls how fast the free–wheel diode is
cleared. The interaction of the IGBT and freewheeling diode
determines the turn–on dv/dt.
Excessive turn–on dv/dt is a common problem in
half–bridge circuits.
The LED drive provides a resistor programmable current
of 10 to 20 mA when on and provides a low impedance path
when off.
The turn–off resistor R controls the turn–off speed and
off
ensures that the IGBT remains off under commutation
stresses. Turn–off is critical to obtain low switching losses.
8
MOTOROLA ANALOG IC DEVICE DATA
MC33154
An active high output, resistor, and small signal diode
provide an excellent LED driver. This circuit is shown in
Figure 28.
voltage on the desaturation input. The voltage reference is
set to about 6.5 V. This will allow a maximum ON–voltage of
about 5.0 V.
Figure 28. Output Fault Optoisolator
Figure 29. Desaturation Detection Using a Diode
Short Circuit
Latch Output
V
CC
V
CC
V
CC
Desaturation
Comparator
1.0 mA
D1
Q
8
7
6.5 V
V
Kelvin
Gnd
EE
V
EE
V
EE
Kelvin
Gnd
UNDER VOLTAGE LOCK OUT
A fault exists when the gate input is high and V
of the
.The
CE
IGBT is greater than the maximum allowable V
CE(sat)
It is desirable to protect an IGBT from insufficient gate
voltage. IGBTs require 15 V on the gate to guarantee device
saturation. At gate voltages below 13 V, the “on” state voltage
increases dramatically, especially at higher currents. At very
lower gate voltages, below 10 V, the IGBT may operate in the
linear region and quickly overheat. Many PWM motor drives
use a bootstrap supply for the upper gate drive. The UVLO
provides protection for the IGBT in case the bootstrap
capacitor discharges.
output of the desaturation comparator is ANDed with the gate
input signal and fed into the Short Circuit (SC) latch. The SC
latch will turn–off the IGBT for the remainder of the cycle
when a fault is detected. When the input is toggled low, the
latch will reset. The reference voltage is tied to the Kelvin
Ground instead of the V to make the threshold
EE
independent of negative gate bias.
The MC33154 also features a programmable turn–on
blanking time. During turn–on the IGBT must clear the
opposing free wheeling diode. The collector voltage will
remain high until the diode is cleared. Once the diode has
been cleared the voltage will come down quickly to the
The MC33154 will typically start up at about 12 V. The
UVLO circuit has about 1.0 volt of hysteresis. The UVLO will
disable the output if the supply voltage falls below about 11 V.
V
of the device. Following turn–on there is normally
CE(sat)
PROTECTION CIRCUITRY
Desaturation Protection
considerable ringing on the collector due to the C
IGBTs and the parasitic wiring inductance.
of the
oss
The error signal from the desaturation signal must be
blanked out sufficiently to allow the diode to be cleared and
the ringing to settle out.
The blanking function uses an NPN transistor to clamp the
comparator input when the gate input is low. When the input
is switched high, the clamp transistor will turn–off, and the
current source will charge up the blanking capacitor. The time
required for blanking capacitor to charge up from the
on–voltage of the clamp FET to the trip voltage of the
comparator is the blanking time.
Bipolar Power circuits have commonly used what is known
as “Desaturation Detection”. This involves monitoring the
collector voltage and turning off the device if the collector
voltage rises above a certain limit. A bipolar transistor will
only conduct a certain amount of current for a given base
drive. When the base is overdriven the device is in saturation.
When the collector current rises above the knee, the device
pulls out of saturation.
The maximum current the device will conduct in the linear
region is a function of the base current and hfe of the
transistor.
The output characteristics of an IGBT are similar to a
Bipolar device. However the output current is a function of
gate voltage, not current. The maximum current depends on
the gate voltage and the device. IGBTs tend to have a very
high transconductance and a much higher current density
under a short circuit than a bipolar device.
If a short circuit occurs after the IGBT is turned on and
saturated, the delay time will be the time required for the
current source to charge up the blanking capacitor from the
V
to the trip voltage of the comparator.
CE(sat)
Sense IGBT Protection
Another approach to protecting the IGBTs is to sense the
emitter current using a current shunt or Sense IGBTs.
This method has the advantage of being able to use high
gain IGBTs which do not have any inherent short circuit
capability.
Current sense IGBTs work as well as current sense
MOSFETs in most circumstances. However, the basic
problem of working with very low sense voltages still exists.
Sense IGBTs sense current through the channel and are
therefore linear concerning collector current.
Motor control IGBTs are designed for a lower current
density under shorted conditions and a longer short circuit
survival time.
The best method for detecting desaturation is the use of a
high voltage clamp diode and a comparator. The MC33154
has a desaturation comparator which senses the collector
voltage and provides an output indicating when the device is
not full saturated. Diode D1 is an external high voltage diode
with a rated voltage comparable to the power device. When
the IGBT is ON and saturated, diode D1 will pull down the
voltage on the desaturation input. When the IGBT is OFF or
pulls out of saturation, the current source will pull up the
Because IGBTs have a very low incremental
on–resistance, sense IGBTs behave much like low–on
resistance current sense MOSFETs. The output voltage of a
9
MOTOROLA ANALOG IC DEVICE DATA
MC33154
properly terminated sense IGBT is very low, normally less
than 100 mV.
connected to Gnd. The input optoisolator, however, should
be referenced to V
.
EE
The sense IGBT approach requires a blanking time to
prevent false tripping during turn–on. The sense IGBT also
requires that the sense signal is ignored while the gate is low.
This is because the mirror normally produces large transient
voltages during both turn–on and turn–off due to the collector
to mirror capacitance.
A low resistance current shunt may also be used to sense
the emitter current. A very low resistance shunt (5.0 mΩ to
50 mΩ) must be used with high current IGBTs. The output
voltage of a current shunt is also very low.
When the output is an actual short circuit the inductance
will be very low. Since the blanking circuit provides a fixed
minimum on–time the peak current under a short circuit may
be very high. A short circuit discern function may be
implemented using a second comparator with a higher trip
voltage.
Figure 31. Dual Supply Application
15 V
6
V
8
5
CC
Desat/
Blank
7
4
Fault
Output
MC33154
1
2
Sense
Gnd
Input
V
EE
3
This circuit can distinguish between an overcurrent and a
shorted output condition. Under an actual short circuit the die
temperature may get very hot. When a short circuit is
detected the transistor should be turned–off for several
milliseconds to cool down before the device is turned back
on.
The sense circuit is very similar to the Desaturation circuit.
The MC33154 uses a combination circuit that provides
protection for both Short Circuit capable IGBTs and Sense
IGBTs.
–5.0 V
If Desaturation protection is desired as shown in Figure
32, a high voltage diode is connected to the
Desaturation/Blanking pin. The blanking capacitor should be
connected from the Desaturation pin to the V
supply is used the blanking capacitor should be connected to
the Kelvin Gnd.
pin. If a dual
EE
Because desaturation protection is used in this example,
the sense input should be tied high. The MC33154 design
ANDs the output of the overcurrent comparators with the
output of the desaturation comparator, allowing the circuit
designer to choose either type of protection.
Although the reverse voltage on collector of the IGBT is
clamped to the emitter by the free wheeling diode, there is
normally considerable inductance within the package itself. A
small resistor in series with the diode may be used to protect
the IC from reverse voltage transients.
APPLICATION EXAMPLES
The simplest gate drive circuit using the MC33154 is
shown in Figure 30. The optoisolator requires a pull up
resistor. This resistor value should be set to bias the output
transistor at the desired current. A decoupling capacitor
should be placed close to the IC to minimize switching noise.
A bootstrap diode may be used to for a floating supply. If
the protection features are not used, then both the
desaturation input and the current sense input should be
grounded.
Figure 32. Desaturation Application
When used with a single supply the Kelvin Gnd and V
pins should be connected. Separate resistors are
recommended for turn–on and turn–off.
EE
18 V
6
Figure 30. Basic Application
8
5
V
Desat/
Blank
7
4
CC
Fault
18 V
MC33154
Output
6
1
2
V
8
5
Sense
Gnd
CC
Desat/
Blank
7
4
Input
V
EE
3
Fault
Output
MC33154
1
2
Sense
Gnd
Input
V
When using sense IGBTs or a sense resistor, as shown in
Figure 33, the sense voltage is applied to the current sense
input. The sense trip voltages are referenced to the Kelvin
Gnd pin. The sense voltage is very small, typically about 65
mV, and sensitive to noise.
Therefore, the sense and ground return conductors should
be routed as a differential pair. An RC filter is useful in filtering
any high frequency noise. A blanking capacitor is connected
EE
3
When used with a dual supply as shown in Figure 31, the
Gnd pin should be Kelvin connected to the emitter of the
IGBT. If the protection features are not used, then both the
desaturation input and the current sense input should be
10
MOTOROLA ANALOG IC DEVICE DATA
MC33154
from the blanking pin to V . The stray capacitance on the
blanking pin provides a very small level of blanking if left
open.
Figure 33. Sense IGBT Application
EE
18 V
The blanking pin should not be grounded when using
current sensing. That would disable the overcurrent sense.
The blanking pin should never be tied high. That would short
out the internal IC clamp transistor.
6
8
5
V
Desat/
Blank
7
4
CC
Fault
Output
MC33154
1
2
Sense
Input
V
Gnd
EE
3
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specificallydisclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
datasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemayvaryovertime. Alloperatingparameters,including“Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applicationsintended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
ordeathmayoccur. ShouldBuyerpurchaseoruseMotorolaproductsforanysuchunintendedorunauthorizedapplication,BuyershallindemnifyandholdMotorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and
Opportunity/Affirmative Action Employer.
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
11
MOTOROLA ANALOG IC DEVICE DATA
MC33154
OUTLINE DIMENSIONS
D SUFFIX
PLASTIC PACKAGE
CASE 751–05
ISSUE S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. DIMENSIONS ARE IN MILLIMETERS.
3. DIMENSION D AND E DO NOT INCLUDE MOLD
PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.
5. DIMENSION B DOES NOT INCLUDE MOLD
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS
OF THE B DIMENSION AT MAXIMUM MATERIAL
CONDITION.
D
A
C
8
1
5
4
M
M
0.25
B
H
E
MILLIMETERS
h X 45
DIM
A
A1
B
C
D
MIN
1.35
0.10
0.35
0.18
4.80
3.80
MAX
1.75
0.25
0.49
0.25
5.00
4.00
B
e
A
C
SEATING
PLANE
E
e
H
h
L
1.27 BSC
L
5.80
0.25
0.40
0
6.20
0.50
1.25
7
0.10
A1
B
M
S
S
0.25
C
B
A
P SUFFIX
NOTES:
PLASTIC PACKAGE
CASE 626–05
ISSUE K
1. DIMENSION L TO CENTER OF LEAD WHEN
FORMED PARALLEL.
2. PACKAGE CONTOUR OPTIONAL (ROUND OR
SQUARE CORNERS).
8
5
–B–
3. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
1
4
MILLIMETERS
INCHES
DIM
A
B
C
D
F
G
H
J
K
L
M
N
MIN
9.40
6.10
3.94
0.38
1.02
MAX
10.16
6.60
4.45
0.51
1.78
MIN
MAX
0.400
0.260
0.175
0.020
0.070
STYLE 1:
F
0.370
0.240
0.155
0.015
0.040
PIN 1. AC IN
2. DC + IN
3. DC – IN
4. AC IN
5. GROUND
6. OUTPUT
7. AUXILIARY
–A–
NOTE 2
L
2.54 BSC
0.100 BSC
0.76
0.20
2.92
7.62 BSC
–––
1.27
0.30
3.43
0.030
0.008
0.115
0.300 BSC
–––
0.050
0.012
0.135
8.
V
CC
C
J
10
1.01
10
0.040
–T–
SEATING
PLANE
0.76
0.030
N
M
D
K
G
H
M
M
M
0.13 (0.005)
T
A
B
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