MC33157DW [ONSEMI]
Half Bridge Controller and Driver for Industrial Linear Tubes; 半桥控制器和驱动器,用于工业线性管![MC33157DW](http://pdffile.icpdf.com/pdf1/p00081/img/icpdf/MC33157_428384_icpdf.jpg)
型号: | MC33157DW |
厂家: | ![]() |
描述: | Half Bridge Controller and Driver for Industrial Linear Tubes |
文件: | 总12页 (文件大小:271K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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The MC33157 includes the oscillator circuit and two output
channels to control a half–bridge power stage.
One of the channels is ground–referenced. The second one is
floating to provide a bootstrap operation for the high side switch.
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Dedicated Driver for Industrial Linear Tubes
• Main oscillator is current controlled, making it easy to set up by a
single external resistor. On top of that, such a feature is useful to
implement a dimming function by frequency shift.
16
1
• Filament pre–heating time control built–in.
SO–16L
DW SUFFIX
CASE 751G
• The strike sequence is controllable by external passive components,
the resonnant frequency being independently adjustable. This
frequency can be made different from the pre–heating and the steady
state values. A frequency sweep between two defined values makes
this IC suitable for any series resonnant topologies.
PIN CONNECTIONS AND
MARKING DIAGRAM
• Dedicated internal comparator provides an easy lamp strike detection
implementation.
• Digital RESET pin provides a fast reset of the system (less than 10µs).
Both output MOSFET are set to “OFF” state when RESET is zero.
• Adjustable dead time makes the product suitable for any snubber
capacitor and size of MOSFET used as power switches.
• Designed to be used with standard setting capacitors ≤ 470nF.
• A voltage reference, derived from the internal bandgap, is provided
for external usage. This voltage is 100% trimmed at probe level
yielding a 2% tolerance over the temperature range.
1
2
3
4
5
6
7
8
16
15
14
V
V
HS
DD
+V
V
HO
ref
C
PH
V
OUT
R
PH
12
11
10
9
C
V
LO
SWEEP
C
OP
GND
RESET
SD
ICO
C
SWEEP
R
PH
C
C
R
DTA
PH
OP
6
OP
V
DD
AWL = Manufacturing Code
YYWW = Date Code
ICO
2
+Vref
1
4
5
3
7
+Vref
Iph
(Top View)
15 V
R
R
U
VLO
Iph
Ifstrike
PREHEAT
& STRIKE CONTROL
BAND GAP
REFERENCE
Iop
ORDERING INFORMATION
+Vref
Device
Package
Shipping
47 Units / Rail
+Vref
(+7 V)
R
+Vref
MC33157DW Plastic SO–16L
DT adjust
16
15
14
13
12
11
ENABLE
Dead Time
VHS
VHO
VOUT
NC
8
9
HIGH SIDE
BUFFER
LEVEL
SHIFTER
Latch
CONTROL LOGIC
Strike Detection
Strike
Detection
Q
Vth
C
LOW SIDE
BUFFER
VLO
GND
Clear
10
INHIBIT
RESET
Semiconductor Components Industries, LLC, 1999
1
Publication Order Number:
November, 1999 – Rev. 1
MC33157/D
MC33157
MAXIMUM RATINGS
Rating
Symbol
Value
600
16
Unit
V
High Side Max Voltage
V
HS
Differential Max Voltage V
– V
V
HS
V
HS
OUT
High Side Output Voltage Range
Low Side Output Voltage Range
V
V
–0.3 to V +0.3
V
HO
OUT HS
V
–0.3 to +16
±10
V
LO
Max V
Max V
Allowable Slew Rate
dV /dt
HS
V/ns
V/ns
HS
/V
HO LO
Allowable Slew Rate
(Note 1)
dV /dt, dV /dt
HO LO
±10
Supply Voltage
V
P
16
600
140
V
DD
D
Maximum Power Dissipation @ T = 50°C
Thermal Resistance Junction–to–Air
Operating Junction Temperature
mW
°C/W
°C
A
R
T
θJA
–40 to +150
J
Storage Temperature Range
Electrostatic Discharge [HBMI]
T
–65 to +150
2.0
°C
stg
ESD
kV
ELECTRICAL CHARACTERISTICS (V
unless otherwise noted.)
= 14V. All parameters are specified for –20°C to 85°C ambient temperature
DD
Characteristic
Symbol
Min
Typ
Max
Unit
SUPPLY VOLTAGE
Input Threshold Voltage
Turn–On
Turn–Off
UV
11
8.0
12
8.5
12.8
9.0
V
V
ON
UV
OFF
Clamp Voltage @ I
CLAMP
= 10 mA
V
15
16
12
16.5
V
CLAMP
(Note 2)
Supply Current
I
S
mA
mA
mA
Standby Current at No Load @ V
< UV
I
STDBY
1.5
2.5
DD
OFF
Quiescent Current at No Load @ V
> UV
I
Q
DD
ON
OUTPUT DRIVERS (V , V
LO HO
)
High Side VDS
@ Source current = 250 mA
@ Sink current = 300 mA
V
(P)
(N)
–
–
880
880
40
1500
1500
mV
mV
ns
ON
ON
DS
Low Side VDS
V
DS
High Side / Low Side rise time @ C
= 2 nF
= 2 nF
t
r
OUT
High Side / Low Side fall time @ C
OSCILLATOR
t
f
35
ns
OUT
Output Max Frequency
f
250
–
kHz
%
OSC
Internal Master Clock Duty Cycle
DC
–
50
System operation programming recommended values
R
R
68
68
68
10
100
560
560
2200
250
560
k
k
k
k
OP
PH
R
ENDSWEEP
R
C
DTA
OP
pF
V
V
High threshold
Low threshold
–
–
–
–
4.2
2.8
400
2.0
–
–
–
–
V
V
COP
COP
I
I
discharging current
µA
COP
over I
current ratio
COP
ROP
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2
MC33157
ELECTRICAL CHARACTERISTICS (continued) (V
unless otherwise noted.)
= 14V. All parameters are specified for –20°C to 85°C ambient temperature
DD
Characteristic
TIMING
Symbol
Min
Typ
Max
Unit
Preheat timing capacitor pulsed charging current
(Duty Cycle=1/16)
It
PH
14
16
17
µA
Filament preheat time with C
= 0.47 µF
t
–
–
2.0
125
1/16
10
–
–
s
PH
PH
Strike sequence recycling time with C
= 0.47 µF
t
ms
PH
SK
C
charging current ratio
∂
–
–
PH
Strike sequence restart blanking time with C
Dead time: externally adjustable by Rdt
= 470nF
t
–
–
ms
µs
k
PH
bk
dt
0.3
10
–
2.5
220
Dead time adjust resistance (Recommended range)
Dead time tolerance
Rdt
–
dt
±10
%
Tol
VOLTAGE REFERENCE
Voltage reference @ I
= 500 µA, T = 25°C
V
–
–
7.0
10
10
–
–
–
V
LOAD
J
REF
Line regulation @ I
LOAD
= 500 µA, T = 25°C
V
mV
mV
mA
V
J
REF
Load regulation @ I
= 500 µA to 5 mA
V
–
–
LOAD
REF
Maximum load current
I
–
25
7.15
REFMAX
Total V
variation over Line, Temperature, Load
V
REF
6.85
7.0
REF
INPUT
Strike detect high voltage threshold
Strike detect low voltage threshold
VTH HI
SD
–
–
4.0
3.75
–
–
–
V
V
VTH LO
SD
Maximum current on strike detect input @ Regulation level
Maximum voltage on strike detect @ Regulation level
Maximum current on strike detect input @ Low level
Maximum strike detect voltage negative input
Strike detect minimum pulse width
I
HI
–
10
7.0
10
–0.3
–
nA
V
SD
V
SD
HI
–
–
I
LO
–
–
nA
V
SD
V
SD
NEG
–
–
SDPW
RSTHI
RSTLO
50
–
100
1.8
1.8
–20
–20
–
ns
V
RESET high voltage
2.2
–
RESET low voltage
1.6
–
V
RESET input current @ high voltage
RESET input current @ low voltage
RESET maximum voltage
–
µA
µA
V
–
–
–
7.0
–0.3
RESET maximum negative voltage
–
–
V
NOTES:
(1) Since this device has a built–in zener, one cannot use a low impedance supply to drive this pin. Having a current limit mode by external
means is mandatory.
(2) Test Conditions: C
OUT
= 2.2 nF, f = 100 kHz, V = 15V.
DD
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3
MC33157
PIN FUNCTION DESCRIPTION
Pin
Symbol
Function
Description
1
V
DD
Supply voltage
input
This pin provides the DC supply to the circuit. The voltage is internally clamped by a zener
connected to the ground. It is NOT allowed to use a DC low impedance power supply to feed this
pin, but limiting the current by an external resistor is mandatory. It is recommended to damp this pin
to ground by an electrolytic capacitor connected close to pin 1.
2
3
+V
Voltage
reference
output
This pin provides a +7V voltage reference derived from the internal bandgap. The +Vref can supply
up to 25 mA and shall be decoupled to ground by a 220nF ceramic capacitor
ref
C
R
Preheat timing
capacitor
This capacitor sets two timings: filaments preheat time (t ) and strike sequence recycle time (t ).
PH SK
PH
It is charged with a constant current and cares must be observed to minimize the leakage current
at this pin to get the expected timing. Typically, a 0.47 µF capacitor will give a 2 seconds
pre–heating time and a 125 ms strike sequence recycle time. (See details given by figure 9)
4
Preheat and
Strike
frequencies
adjustment
resistors
The R
resistor together with R
and C
OP
defines the frequency used to preheat the
= f ). Duringthesweep
PH
PH
filaments(f
ENDSWEEP
ENDSWEEP
= f ). R
definesthestrikefrequency(f
PH
1
ENDSWEEP
2
timing, the frequency will sweep from the high pre–heating f to the low strike f values. Normally,
1
2
f
is far from the LC resonance but f is close enough to generate the high voltage across the
1
2
fluorescent tube. (See details given by figure 9)
5
6
7
C
Frequency
sweep timing
capacitor
This timing define the sweep time from f to f . Since the timing capacitor is charged with a low
constant current, cares must be observed to minimize the leakage current at this pin to get the
SWEEP
1
2
expected timing. Since this capacitor is charged through resistor R , the voltage rises according
PH
to an exponential and the frequency shifts with the same law.
C
Oscillator
capacitor
This pin defines the steady state operation frequency (f = f ) of the controller. Since this timing
OP
OP
3
capacitor is charged with a low constant current, cares must be observed to minimize the leakage
current at this pin to get the expected frequency. Film type capacitor are recommended
(polycarbonate).
ICO
Steady state
operating
Since the circuit uses a Current Controlled Oscillator (ICO), the current forced into this pin will
control the operating frequency. The allowable current range is from 1 µA to 500 µA. The +Vref
frequency
adjustment
current input
output can be used to provide the voltage across R . An auxiliary voltage source can be used to
implement a dimming function.
OP
8
9
DTA
SD
Dead Time
Adjust
This pin provides an access to the internal timing system to adjust the dead time between the gate
drive of the High and Low power switches connected, respectively, to pin V
HO
and V
.
LO
Strike detection
input
This pin drives a comparator, with an internal fixed reference, and acknowledges the tube strike.
When a negative going slope (across the internal reference) is detected, the system considers the
lamp has struck and the oscillator jumps from the present frequency value, which is within the
window defined by R
and R
to the steady state value defined by R . If no negative
PH
ENDSWEEP
OP
going slope is detected on this pin, the system will repeat the sweep and strike sequence four
times, then stops. The circuit will re–start from either a RESET, or by pulling +V to ground. The
DD
input signal can be either a logic level or an analog voltage ramping up from zero to +Vref followed
by a negative going slope to zero. In any case, the positive pulse width must be 1 µs minimum. The
pcb layout must be designed to minimize the noise at this pin. (See details given by figures 8, 9, &
10)
10
RESET
Master reset
input
Forcing a logic zero to this pin (HCMOS low level) will reset the circuit, initializing a frequency sweep
and lamp strike sequence. The master reset does not include the pre–heating timing. The minimum
pulse width requested is 10µs to guarantee a reset state. However, this pin has no built in filtering
and a shorter pulse may initialize a reset sequence: it is the responsibility of the designer to make
sure that no noise or parasitic pulse are developed at the RESET input. A full re–start of the
sequence, including the pre–heating time, can be initialized by pulling the +V
case, +V
DD
pin to ground. In this
and RESET must be simultaneously released to a high state. When RESET is asserted
DD
low (active) both outputs MOS are biased in the off condition. An internal 20µA pull up current forces
the pin to logic one, allowing the designer to left this pin open if the RESET function is not used. In
order to avoid any uncontrolled state of the output drivers, it is recommended to set up a 10ms low
level at pin 10. The reset is activated in less than 10 microsecond, but releasing this pin while the Vcc
supply is high (above 300V) can generate a random operation, depending upon the dv/dt coming
from the power supply.
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4
MC33157
PIN FUNCTION DESCRIPTION (continued)
Description
Pin
Symbol
Function
11
GND
Ground
(zero voltage
reference)
Since high and fast currents circulate in the circuit, it is mandatory to build a single ground point in
the system.
12
V
LO
Low side driver
output
This pin provides the V to drive the Low side power MOSFET.
GS
13
14
NC
Not Connected
V
OUT
High side
common point /
Half bridge
output
This pin is connected to the output of the half bridge and is referenced for the High side switch.
15
16
V
High side driver
output
This pin provides the V to drive the High side power MOSFET.
GS
HO
V
High voltage
boost supply
The gate drive of the High side switch is derived from this voltage.
HS
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5
MC33157
+Vref
Internal
Circuits
6
2K
C
OP
External
10 V
ESD
10 V
ESD
Figure 1. PIN 6 C
INPUT
OP
+Vref
I
SWP
I
PH
(8 UA)
ph/swp Switch
2K
CAN’T READ
3
C
10 V
ESD
10 V
ESD
PH
I
blanking
(200 uA)
(external)
Figure 2. PIN 3 C
INPUT
PH
+Vref
Internal
Circuits
5V
10
2K
0V
10 V
ESD
10 V
ESD
Figure 3. PIN 10 RESET
+Vref
4 V
Internal
Circuits
0.0 V
9
2K
10 V
ESD
10 V
ESD
Hysteresis Switch
Figure 4. PIN 9 SD
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6
MC33157
+Vref
8
1
I
I/8
2K
Internal
Circuits
8
10 V
ESD
10 V
ESD
R
DTA
(external)
Figure 5. PIN 8 DTA
+Vref
10 V
ESD
2
R
I
OP
(external)
2K
6
7
10 V
ESD
2I
10 V
ESD
C
OP
(external)
1 k
1 k
(internal)
(internal)
Figure 6. PIN ICO
+Vref
10 V
ESD
2
ph/swp switch
2K
C
SWP
(external)
5
R
ENDSWEEP
(external)
10 V
ESD
10 V
ESD
R
PH
I
(external)
10 V
ESD
10 V
ESD
6
4
2K
2I
C
OP
(external)
1 k
1 k
(internal)
(internal)
Figure 7. PIN 2, 4 & 5 V , R
ref PH
& C
SWP
V
T
1 s
SD max
SDHIVth
4 V typ
SDLOVth
3.75 V typ
Internal Hysterisis
t
The Strike Detect is acknowledged as soon as the input
voltage drops below SDLOVth. It is not necessary to pull
the input voltage to zero volt or to a negative bias
SDNEG max
Figure 8. STRIKE DETECTION
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7
MC33157
Rise time lms
V
DD
U
VLO
RESET
U
VON
9.2 V typ
U
VLO
3.8 V typ
7.0 V typ
V
ref
tph
V
CPH
(PREHEAT)
Frequency
SWEEP
t
1 s
STRIKE
DETECTION
STRIKE
1
0
RESET
Output
Frequency
status
F1
F2
F3
F1
F2
F3
OFF STATE
OFF STATE
time
f = f , preheating frequency adjusted by R and R
PH PH ENDSWEEP
1
f = f
, end of sweep frequency, adjusted by R
pin 2). In any case f
f
2
2
ENDSWEEP
ENDSWEEP (
1
f = f , operating frequency controlled by the I current (pin 7) and capacitor C
OP CO OP
3
t
= (C * 2/3 * Vref) / ( * I )
PH tPH
PH
“OFF” state: High side switch OFF, Low side switch ON
Figure 9. TIMING DIAGRAM (Normal startup sequence and U
reset)
VLO
10 s
1
0
RESET
V
repeats indefinitely
CSWP
No further logic action activated
+V
ref
V
CSWP
SD
SD
LOW
HIGH
STRIKE
DETECTION
Output Frequency
status
F3
F3
OFF STATE
FSweep
time
Previous On state
When RESET pin is released to a logic one, the system jumps to the preheat frequency as defined by RPH,
then executes a frequency sweep down to f , as defined by R , and waits until a strike
ENDSWEEP ENDSWEEP
detection signal is applied to pin 9. There is no preheating timing performed after a reset coming from pin 10.
RESET logic level is CMOS compatible.
Note: Strike detection lever can be either digital – CMOS or analog as depicted here above, as long as the
signal fulfills the SD
and SD
values and timing.
HIGH
LOW
OFF STATE: both output MOSFET are biased in the off condition.
Figure 10. TIMING DIAGRAM (External reset)
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8
MC33157
1
0
RESET
End of preheating sequence
Blanking 10 ms typ
Blanking
Last restrike valid cycle
@ C = 470 nF
PH
+V
ref
V
CSWP
t
F
t
FEND
t
SK
SD
HIGH
V
+V
ref
SD
LOW
STRIKE
DETECTION
Output
Frequency status
FSweep
FSweep
FSweep
FSweep
F2 F1
F2 F1
F2 F1
F2
F3
time
t
: Sweep Frequency time. This time is given by the RC network built with C
: Sweep sequence recycle time. This time is derived by integrating a constant DC current in capacitor
and R .
PH
SF SWEEP
t
C
SK
There is a fixed ratio ( ) between the preheating time t and strike sequence recycle time t .
PH SK
PH.
t
: Time during which f = (f
). This time is equal to t – t .
fEND
ENDSWP SK SF
The controllerrepeats the f
andthe strike sequence untilthere is a STRIKEsignalcomingfromthe externalcircuit, oruntilFOURsequences have beencounted.
SWEEP
Following a non strike situation, the controller goes in a full STOP and can be reinitialized by either pulling the V pin 1 to ground or by forcing a low to the RESET
pin 9. The controller assumes the lamp has struck when a negative going transient is applied on the STRIKE detection pin 10. On the other hand, in order to avoid false
DD
strike information, the controller force a blank time between the end of t
SWEEP
and the start of the next sequence.
Figure 11. TIMING DIAGRAM (no strike conditions)
5
4.5
4
I = V/√ [(R2 + (L – 1/C )2]
Z @ RLCF
I = V/√ [(R2 + (L )2]
3.5
3
Z = Lw
2.5
2
1.5
1
0.5
0
Frequency (F)
Figure 12. OUTPUT = f (freq) @ Lc = 1.5 mH, Cs = 6.8 nF
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9
MC33157
+400 V
R3
R9
10 F/25 V
C3
C4
D1
MUR160
R4
7
2
1
16
Q1
MTP6N60E
I
0
+V
V
V
HS
C
REF DD
C2
C1
6
3
4
C
OP
15
14
V
HO
Ns
C
PH
T1
D3
R2
U1
MC33157
V
R
OUT
PH
Np
Q2
MTP6N60E
5
8
C6
12
V
C
1N4148
LO
SWP
R5
D
TA
RESET
10
GND
11
SD
9
Typical Values for F = 70 kHz, F = 45 kHz, t = 2 s, t = 125 ms
SWEEP
PH
OP
PH
T1 Np =
Ns =
R1 390 k
C1
C2
C3
C4
C5
C6
C7
C8
C9
470 nF/25 V/Polyester
470 pF/2%/50 ppm
10 F/25 V/Electrolytic
220 nF/Polyester
100 nF/63 V/Polyester
220 nF/25 V/Polyester
6.8 nF/5%/1000 V
100 nF/400 V/Polyester
100 nF/400 V/Polyester
R2 62 k
Lp = 150 mH
R3 100 k – 0.5 W
R4 100 k
R5 82 K
R6 1 M
R7 68 K
Q1 MTP6N60E
Q2 MTP6N60E
D1 MUR160RL
D2 MUR120RL
D3 1N4148
R8 68 k
R9 22
U1 MC33157
C10 22 F/450 V/Electrolytic
C11 100 nF/25 V/Polyester
C12 330 pF/500 V/Polyester
TO SEE: AN1682 (Using the MC33157 Electronic Ballast Controller)
Figure 13. Typical Application Schematic Diagram
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MC33157
PACKAGE DIMENSIONS
SO–16L
DW SUFFIX
PLASTIC PACKAGE
CASE 751G–03
ISSUE B
A
D
16
9
NOTES:
1. DIMENSIONS ARE IN MILLIMETERS.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
3. DIMENSIONS D AND E DO NOT INLCUDE MOLD
PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.
5. DIMENSION B DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.13 TOTAL IN EXCESS
OF THE B DIMENSION AT MAXIMUM MATERIAL
CONDITION.
1
8
MILLIMETERS
B
16X B
DIM MIN
MAX
2.65
0.25
0.49
0.32
10.45
7.60
A
A1
B
C
D
E
2.35
0.10
0.35
0.23
10.15
7.40
M
S
S
0.25
T A
B
e
1.27 BSC
H
h
L
10.05
0.25
0.50
0
10.55
0.75
0.90
7
SEATING
PLANE
14X
e
C
T
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MC33157
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
withoutfurthernoticetoanyproductsherein. SCILLCmakesnowarranty,representationorguaranteeregardingthesuitabilityofitsproductsforanyparticular
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including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
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MC33157/D
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