MC33157DW [ONSEMI]

Half Bridge Controller and Driver for Industrial Linear Tubes; 半桥控制器和驱动器,用于工业线性管
MC33157DW
型号: MC33157DW
厂家: ONSEMI    ONSEMI
描述:

Half Bridge Controller and Driver for Industrial Linear Tubes
半桥控制器和驱动器,用于工业线性管

驱动器 控制器
文件: 总12页 (文件大小:271K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
The MC33157 includes the oscillator circuit and two output  
channels to control a half–bridge power stage.  
One of the channels is ground–referenced. The second one is  
floating to provide a bootstrap operation for the high side switch.  
http://onsemi.com  
Dedicated Driver for Industrial Linear Tubes  
Main oscillator is current controlled, making it easy to set up by a  
single external resistor. On top of that, such a feature is useful to  
implement a dimming function by frequency shift.  
16  
1
Filament pre–heating time control built–in.  
SO–16L  
DW SUFFIX  
CASE 751G  
The strike sequence is controllable by external passive components,  
the resonnant frequency being independently adjustable. This  
frequency can be made different from the pre–heating and the steady  
state values. A frequency sweep between two defined values makes  
this IC suitable for any series resonnant topologies.  
PIN CONNECTIONS AND  
MARKING DIAGRAM  
Dedicated internal comparator provides an easy lamp strike detection  
implementation.  
Digital RESET pin provides a fast reset of the system (less than 10µs).  
Both output MOSFET are set to “OFF” state when RESET is zero.  
Adjustable dead time makes the product suitable for any snubber  
capacitor and size of MOSFET used as power switches.  
Designed to be used with standard setting capacitors 470nF.  
A voltage reference, derived from the internal bandgap, is provided  
for external usage. This voltage is 100% trimmed at probe level  
yielding a 2% tolerance over the temperature range.  
1
2
3
4
5
6
7
8
16  
15  
14  
V
V
HS  
DD  
+V  
V
HO  
ref  
C
PH  
V
OUT  
R
PH  
12  
11  
10  
9
C
V
LO  
SWEEP  
C
OP  
GND  
RESET  
SD  
ICO  
C
SWEEP  
R
PH  
C
C
R
DTA  
PH  
OP  
6
OP  
V
DD  
AWL = Manufacturing Code  
YYWW = Date Code  
ICO  
2
+Vref  
1
4
5
3
7
+Vref  
Iph  
(Top View)  
15 V  
R
R
U
VLO  
Iph  
Ifstrike  
PREHEAT  
& STRIKE CONTROL  
BAND GAP  
REFERENCE  
Iop  
ORDERING INFORMATION  
+Vref  
Device  
Package  
Shipping  
47 Units / Rail  
+Vref  
(+7 V)  
R
+Vref  
MC33157DW Plastic SO–16L  
DT adjust  
16  
15  
14  
13  
12  
11  
ENABLE  
Dead Time  
VHS  
VHO  
VOUT  
NC  
8
9
HIGH SIDE  
BUFFER  
LEVEL  
SHIFTER  
Latch  
CONTROL LOGIC  
Strike Detection  
Strike  
Detection  
Q
Vth  
C
LOW SIDE  
BUFFER  
VLO  
GND  
Clear  
10  
INHIBIT  
RESET  
Semiconductor Components Industries, LLC, 1999  
1
Publication Order Number:  
November, 1999 – Rev. 1  
MC33157/D  
MC33157  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
600  
16  
Unit  
V
High Side Max Voltage  
V
HS  
Differential Max Voltage V  
– V  
V
HS  
V
HS  
OUT  
High Side Output Voltage Range  
Low Side Output Voltage Range  
V
V
–0.3 to V +0.3  
V
HO  
OUT HS  
V
–0.3 to +16  
±10  
V
LO  
Max V  
Max V  
Allowable Slew Rate  
dV /dt  
HS  
V/ns  
V/ns  
HS  
/V  
HO LO  
Allowable Slew Rate  
(Note 1)  
dV /dt, dV /dt  
HO LO  
±10  
Supply Voltage  
V
P
16  
600  
140  
V
DD  
D
Maximum Power Dissipation @ T = 50°C  
Thermal Resistance Junction–to–Air  
Operating Junction Temperature  
mW  
°C/W  
°C  
A
R
T
θJA  
–40 to +150  
J
Storage Temperature Range  
Electrostatic Discharge [HBMI]  
T
–65 to +150  
2.0  
°C  
stg  
ESD  
kV  
ELECTRICAL CHARACTERISTICS (V  
unless otherwise noted.)  
= 14V. All parameters are specified for –20°C to 85°C ambient temperature  
DD  
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
SUPPLY VOLTAGE  
Input Threshold Voltage  
Turn–On  
Turn–Off  
UV  
11  
8.0  
12  
8.5  
12.8  
9.0  
V
V
ON  
UV  
OFF  
Clamp Voltage @ I  
CLAMP  
= 10 mA  
V
15  
16  
12  
16.5  
V
CLAMP  
(Note 2)  
Supply Current  
I
S
mA  
mA  
mA  
Standby Current at No Load @ V  
< UV  
I
STDBY  
1.5  
2.5  
DD  
OFF  
Quiescent Current at No Load @ V  
> UV  
I
Q
DD  
ON  
OUTPUT DRIVERS (V , V  
LO HO  
)
High Side VDS  
@ Source current = 250 mA  
@ Sink current = 300 mA  
V
(P)  
(N)  
880  
880  
40  
1500  
1500  
mV  
mV  
ns  
ON  
ON  
DS  
Low Side VDS  
V
DS  
High Side / Low Side rise time @ C  
= 2 nF  
= 2 nF  
t
r
OUT  
High Side / Low Side fall time @ C  
OSCILLATOR  
t
f
35  
ns  
OUT  
Output Max Frequency  
f
250  
kHz  
%
OSC  
Internal Master Clock Duty Cycle  
DC  
50  
System operation programming recommended values  
R
R
68  
68  
68  
10  
100  
560  
560  
2200  
250  
560  
k
k
k
k
OP  
PH  
R
ENDSWEEP  
R
C
DTA  
OP  
pF  
V
V
High threshold  
Low threshold  
4.2  
2.8  
400  
2.0  
V
V
COP  
COP  
I
I
discharging current  
µA  
COP  
over I  
current ratio  
COP  
ROP  
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2
MC33157  
ELECTRICAL CHARACTERISTICS (continued) (V  
unless otherwise noted.)  
= 14V. All parameters are specified for –20°C to 85°C ambient temperature  
DD  
Characteristic  
TIMING  
Symbol  
Min  
Typ  
Max  
Unit  
Preheat timing capacitor pulsed charging current  
(Duty Cycle=1/16)  
It  
PH  
14  
16  
17  
µA  
Filament preheat time with C  
= 0.47 µF  
t
2.0  
125  
1/16  
10  
s
PH  
PH  
Strike sequence recycling time with C  
= 0.47 µF  
t
ms  
PH  
SK  
C
charging current ratio  
PH  
Strike sequence restart blanking time with C  
Dead time: externally adjustable by Rdt  
= 470nF  
t
ms  
µs  
k
PH  
bk  
dt  
0.3  
10  
2.5  
220  
Dead time adjust resistance (Recommended range)  
Dead time tolerance  
Rdt  
dt  
±10  
%
Tol  
VOLTAGE REFERENCE  
Voltage reference @ I  
= 500 µA, T = 25°C  
V
7.0  
10  
10  
V
LOAD  
J
REF  
Line regulation @ I  
LOAD  
= 500 µA, T = 25°C  
V
mV  
mV  
mA  
V
J
REF  
Load regulation @ I  
= 500 µA to 5 mA  
V
LOAD  
REF  
Maximum load current  
I
25  
7.15  
REFMAX  
Total V  
variation over Line, Temperature, Load  
V
REF  
6.85  
7.0  
REF  
INPUT  
Strike detect high voltage threshold  
Strike detect low voltage threshold  
VTH HI  
SD  
4.0  
3.75  
V
V
VTH LO  
SD  
Maximum current on strike detect input @ Regulation level  
Maximum voltage on strike detect @ Regulation level  
Maximum current on strike detect input @ Low level  
Maximum strike detect voltage negative input  
Strike detect minimum pulse width  
I
HI  
10  
7.0  
10  
–0.3  
nA  
V
SD  
V
SD  
HI  
I
LO  
nA  
V
SD  
V
SD  
NEG  
SDPW  
RSTHI  
RSTLO  
50  
100  
1.8  
1.8  
–20  
–20  
ns  
V
RESET high voltage  
2.2  
RESET low voltage  
1.6  
V
RESET input current @ high voltage  
RESET input current @ low voltage  
RESET maximum voltage  
µA  
µA  
V
7.0  
–0.3  
RESET maximum negative voltage  
V
NOTES:  
(1) Since this device has a built–in zener, one cannot use a low impedance supply to drive this pin. Having a current limit mode by external  
means is mandatory.  
(2) Test Conditions: C  
OUT  
= 2.2 nF, f = 100 kHz, V = 15V.  
DD  
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3
MC33157  
PIN FUNCTION DESCRIPTION  
Pin  
Symbol  
Function  
Description  
1
V
DD  
Supply voltage  
input  
This pin provides the DC supply to the circuit. The voltage is internally clamped by a zener  
connected to the ground. It is NOT allowed to use a DC low impedance power supply to feed this  
pin, but limiting the current by an external resistor is mandatory. It is recommended to damp this pin  
to ground by an electrolytic capacitor connected close to pin 1.  
2
3
+V  
Voltage  
reference  
output  
This pin provides a +7V voltage reference derived from the internal bandgap. The +Vref can supply  
up to 25 mA and shall be decoupled to ground by a 220nF ceramic capacitor  
ref  
C
R
Preheat timing  
capacitor  
This capacitor sets two timings: filaments preheat time (t ) and strike sequence recycle time (t ).  
PH SK  
PH  
It is charged with a constant current and cares must be observed to minimize the leakage current  
at this pin to get the expected timing. Typically, a 0.47 µF capacitor will give a 2 seconds  
pre–heating time and a 125 ms strike sequence recycle time. (See details given by figure 9)  
4
Preheat and  
Strike  
frequencies  
adjustment  
resistors  
The R  
resistor together with R  
and C  
OP  
defines the frequency used to preheat the  
= f ). Duringthesweep  
PH  
PH  
filaments(f  
ENDSWEEP  
ENDSWEEP  
= f ). R  
definesthestrikefrequency(f  
PH  
1
ENDSWEEP  
2
timing, the frequency will sweep from the high pre–heating f to the low strike f values. Normally,  
1
2
f
is far from the LC resonance but f is close enough to generate the high voltage across the  
1
2
fluorescent tube. (See details given by figure 9)  
5
6
7
C
Frequency  
sweep timing  
capacitor  
This timing define the sweep time from f to f . Since the timing capacitor is charged with a low  
constant current, cares must be observed to minimize the leakage current at this pin to get the  
SWEEP  
1
2
expected timing. Since this capacitor is charged through resistor R , the voltage rises according  
PH  
to an exponential and the frequency shifts with the same law.  
C
Oscillator  
capacitor  
This pin defines the steady state operation frequency (f = f ) of the controller. Since this timing  
OP  
OP  
3
capacitor is charged with a low constant current, cares must be observed to minimize the leakage  
current at this pin to get the expected frequency. Film type capacitor are recommended  
(polycarbonate).  
ICO  
Steady state  
operating  
Since the circuit uses a Current Controlled Oscillator (ICO), the current forced into this pin will  
control the operating frequency. The allowable current range is from 1 µA to 500 µA. The +Vref  
frequency  
adjustment  
current input  
output can be used to provide the voltage across R . An auxiliary voltage source can be used to  
implement a dimming function.  
OP  
8
9
DTA  
SD  
Dead Time  
Adjust  
This pin provides an access to the internal timing system to adjust the dead time between the gate  
drive of the High and Low power switches connected, respectively, to pin V  
HO  
and V  
.
LO  
Strike detection  
input  
This pin drives a comparator, with an internal fixed reference, and acknowledges the tube strike.  
When a negative going slope (across the internal reference) is detected, the system considers the  
lamp has struck and the oscillator jumps from the present frequency value, which is within the  
window defined by R  
and R  
to the steady state value defined by R . If no negative  
PH  
ENDSWEEP  
OP  
going slope is detected on this pin, the system will repeat the sweep and strike sequence four  
times, then stops. The circuit will re–start from either a RESET, or by pulling +V to ground. The  
DD  
input signal can be either a logic level or an analog voltage ramping up from zero to +Vref followed  
by a negative going slope to zero. In any case, the positive pulse width must be 1 µs minimum. The  
pcb layout must be designed to minimize the noise at this pin. (See details given by figures 8, 9, &  
10)  
10  
RESET  
Master reset  
input  
Forcing a logic zero to this pin (HCMOS low level) will reset the circuit, initializing a frequency sweep  
and lamp strike sequence. The master reset does not include the pre–heating timing. The minimum  
pulse width requested is 10µs to guarantee a reset state. However, this pin has no built in filtering  
and a shorter pulse may initialize a reset sequence: it is the responsibility of the designer to make  
sure that no noise or parasitic pulse are developed at the RESET input. A full re–start of the  
sequence, including the pre–heating time, can be initialized by pulling the +V  
case, +V  
DD  
pin to ground. In this  
and RESET must be simultaneously released to a high state. When RESET is asserted  
DD  
low (active) both outputs MOS are biased in the off condition. An internal 20µA pull up current forces  
the pin to logic one, allowing the designer to left this pin open if the RESET function is not used. In  
order to avoid any uncontrolled state of the output drivers, it is recommended to set up a 10ms low  
level at pin 10. The reset is activated in less than 10 microsecond, but releasing this pin while the Vcc  
supply is high (above 300V) can generate a random operation, depending upon the dv/dt coming  
from the power supply.  
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4
MC33157  
PIN FUNCTION DESCRIPTION (continued)  
Description  
Pin  
Symbol  
Function  
11  
GND  
Ground  
(zero voltage  
reference)  
Since high and fast currents circulate in the circuit, it is mandatory to build a single ground point in  
the system.  
12  
V
LO  
Low side driver  
output  
This pin provides the V to drive the Low side power MOSFET.  
GS  
13  
14  
NC  
Not Connected  
V
OUT  
High side  
common point /  
Half bridge  
output  
This pin is connected to the output of the half bridge and is referenced for the High side switch.  
15  
16  
V
High side driver  
output  
This pin provides the V to drive the High side power MOSFET.  
GS  
HO  
V
High voltage  
boost supply  
The gate drive of the High side switch is derived from this voltage.  
HS  
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5
MC33157  
+Vref  
Internal  
Circuits  
6
2K  
C
OP  
External  
10 V  
ESD  
10 V  
ESD  
Figure 1. PIN 6 C  
INPUT  
OP  
+Vref  
I
SWP  
I
PH  
(8 UA)  
ph/swp Switch  
2K  
CAN’T READ  
3
C
10 V  
ESD  
10 V  
ESD  
PH  
I
blanking  
(200 uA)  
(external)  
Figure 2. PIN 3 C  
INPUT  
PH  
+Vref  
Internal  
Circuits  
5V  
10  
2K  
0V  
10 V  
ESD  
10 V  
ESD  
Figure 3. PIN 10 RESET  
+Vref  
4 V  
Internal  
Circuits  
0.0 V  
9
2K  
10 V  
ESD  
10 V  
ESD  
Hysteresis Switch  
Figure 4. PIN 9 SD  
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6
MC33157  
+Vref  
8
1
I
I/8  
2K  
Internal  
Circuits  
8
10 V  
ESD  
10 V  
ESD  
R
DTA  
(external)  
Figure 5. PIN 8 DTA  
+Vref  
10 V  
ESD  
2
R
I
OP  
(external)  
2K  
6
7
10 V  
ESD  
2I  
10 V  
ESD  
C
OP  
(external)  
1 k  
1 k  
(internal)  
(internal)  
Figure 6. PIN ICO  
+Vref  
10 V  
ESD  
2
ph/swp switch  
2K  
C
SWP  
(external)  
5
R
ENDSWEEP  
(external)  
10 V  
ESD  
10 V  
ESD  
R
PH  
I
(external)  
10 V  
ESD  
10 V  
ESD  
6
4
2K  
2I  
C
OP  
(external)  
1 k  
1 k  
(internal)  
(internal)  
Figure 7. PIN 2, 4 & 5 V , R  
ref PH  
& C  
SWP  
V
T
1 s  
SD max  
SDHIVth  
4 V typ  
SDLOVth  
3.75 V typ  
Internal Hysterisis  
t
The Strike Detect is acknowledged as soon as the input  
voltage drops below SDLOVth. It is not necessary to pull  
the input voltage to zero volt or to a negative bias  
SDNEG max  
Figure 8. STRIKE DETECTION  
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7
MC33157  
Rise time lms  
V
DD  
U
VLO  
RESET  
U
VON  
9.2 V typ  
U
VLO  
3.8 V typ  
7.0 V typ  
V
ref  
tph  
V
CPH  
(PREHEAT)  
Frequency  
SWEEP  
t
1 s  
STRIKE  
DETECTION  
STRIKE  
1
0
RESET  
Output  
Frequency  
status  
F1  
F2  
F3  
F1  
F2  
F3  
OFF STATE  
OFF STATE  
time  
f = f , preheating frequency adjusted by R and R  
PH PH ENDSWEEP  
1
f = f  
, end of sweep frequency, adjusted by R  
pin 2). In any case f  
f
2
2
ENDSWEEP  
ENDSWEEP (  
1
f = f , operating frequency controlled by the I current (pin 7) and capacitor C  
OP CO OP  
3
t
= (C * 2/3 * Vref) / ( * I )  
PH tPH  
PH  
“OFF” state: High side switch OFF, Low side switch ON  
Figure 9. TIMING DIAGRAM (Normal startup sequence and U  
reset)  
VLO  
10 s  
1
0
RESET  
V
repeats indefinitely  
CSWP  
No further logic action activated  
+V  
ref  
V
CSWP  
SD  
SD  
LOW  
HIGH  
STRIKE  
DETECTION  
Output Frequency  
status  
F3  
F3  
OFF STATE  
FSweep  
time  
Previous On state  
When RESET pin is released to a logic one, the system jumps to the preheat frequency as defined by RPH,  
then executes a frequency sweep down to f , as defined by R , and waits until a strike  
ENDSWEEP ENDSWEEP  
detection signal is applied to pin 9. There is no preheating timing performed after a reset coming from pin 10.  
RESET logic level is CMOS compatible.  
Note: Strike detection lever can be either digital – CMOS or analog as depicted here above, as long as the  
signal fulfills the SD  
and SD  
values and timing.  
HIGH  
LOW  
OFF STATE: both output MOSFET are biased in the off condition.  
Figure 10. TIMING DIAGRAM (External reset)  
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8
MC33157  
1
0
RESET  
End of preheating sequence  
Blanking 10 ms typ  
Blanking  
Last restrike valid cycle  
@ C = 470 nF  
PH  
+V  
ref  
V
CSWP  
t
F
t
FEND  
t
SK  
SD  
HIGH  
V
+V  
ref  
SD  
LOW  
STRIKE  
DETECTION  
Output  
Frequency status  
FSweep  
FSweep  
FSweep  
FSweep  
F2 F1  
F2 F1  
F2 F1  
F2  
F3  
time  
t
: Sweep Frequency time. This time is given by the RC network built with C  
: Sweep sequence recycle time. This time is derived by integrating a constant DC current in capacitor  
and R .  
PH  
SF SWEEP  
t
C
SK  
There is a fixed ratio ( ) between the preheating time t and strike sequence recycle time t .  
PH SK  
PH.  
t
: Time during which f = (f  
). This time is equal to t – t .  
fEND  
ENDSWP SK SF  
The controllerrepeats the f  
andthe strike sequence untilthere is a STRIKEsignalcomingfromthe externalcircuit, oruntilFOURsequences have beencounted.  
SWEEP  
Following a non strike situation, the controller goes in a full STOP and can be reinitialized by either pulling the V pin 1 to ground or by forcing a low to the RESET  
pin 9. The controller assumes the lamp has struck when a negative going transient is applied on the STRIKE detection pin 10. On the other hand, in order to avoid false  
DD  
strike information, the controller force a blank time between the end of t  
SWEEP  
and the start of the next sequence.  
Figure 11. TIMING DIAGRAM (no strike conditions)  
5
4.5  
4
I = V/[(R2 + (L – 1/C )2]  
Z @ RLCF  
I = V/[(R2 + (L )2]  
3.5  
3
Z = Lw  
2.5  
2
1.5  
1
0.5  
0
Frequency (F)  
Figure 12. OUTPUT = f (freq) @ Lc = 1.5 mH, Cs = 6.8 nF  
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9
MC33157  
+400 V  
R3  
R9  
10 F/25 V  
C3  
C4  
D1  
MUR160  
R4  
7
2
1
16  
Q1  
MTP6N60E  
I
0
+V  
V
V
HS  
C
REF DD  
C2  
C1  
6
3
4
C
OP  
15  
14  
V
HO  
Ns  
C
PH  
T1  
D3  
R2  
U1  
MC33157  
V
R
OUT  
PH  
Np  
Q2  
MTP6N60E  
5
8
C6  
12  
V
C
1N4148  
LO  
SWP  
R5  
D
TA  
RESET  
10  
GND  
11  
SD  
9
Typical Values for F = 70 kHz, F = 45 kHz, t = 2 s, t = 125 ms  
SWEEP  
PH  
OP  
PH  
T1 Np =  
Ns =  
R1 390 k  
C1  
C2  
C3  
C4  
C5  
C6  
C7  
C8  
C9  
470 nF/25 V/Polyester  
470 pF/2%/50 ppm  
10 F/25 V/Electrolytic  
220 nF/Polyester  
100 nF/63 V/Polyester  
220 nF/25 V/Polyester  
6.8 nF/5%/1000 V  
100 nF/400 V/Polyester  
100 nF/400 V/Polyester  
R2 62 k  
Lp = 150 mH  
R3 100 k – 0.5 W  
R4 100 k  
R5 82 K  
R6 1 M  
R7 68 K  
Q1 MTP6N60E  
Q2 MTP6N60E  
D1 MUR160RL  
D2 MUR120RL  
D3 1N4148  
R8 68 k  
R9 22  
U1 MC33157  
C10 22 F/450 V/Electrolytic  
C11 100 nF/25 V/Polyester  
C12 330 pF/500 V/Polyester  
TO SEE: AN1682 (Using the MC33157 Electronic Ballast Controller)  
Figure 13. Typical Application Schematic Diagram  
http://onsemi.com  
10  
MC33157  
PACKAGE DIMENSIONS  
SO–16L  
DW SUFFIX  
PLASTIC PACKAGE  
CASE 751G–03  
ISSUE B  
A
D
16  
9
NOTES:  
1. DIMENSIONS ARE IN MILLIMETERS.  
2. INTERPRET DIMENSIONS AND TOLERANCES  
PER ASME Y14.5M, 1994.  
3. DIMENSIONS D AND E DO NOT INLCUDE MOLD  
PROTRUSION.  
4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.  
5. DIMENSION B DOES NOT INCLUDE DAMBAR  
PROTRUSION. ALLOWABLE DAMBAR  
PROTRUSION SHALL BE 0.13 TOTAL IN EXCESS  
OF THE B DIMENSION AT MAXIMUM MATERIAL  
CONDITION.  
1
8
MILLIMETERS  
B
16X B  
DIM MIN  
MAX  
2.65  
0.25  
0.49  
0.32  
10.45  
7.60  
A
A1  
B
C
D
E
2.35  
0.10  
0.35  
0.23  
10.15  
7.40  
M
S
S
0.25  
T A  
B
e
1.27 BSC  
H
h
L
10.05  
0.25  
0.50  
0
10.55  
0.75  
0.90  
7
SEATING  
PLANE  
14X  
e
C
T
http://onsemi.com  
11  
MC33157  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes  
withoutfurthernoticetoanyproductsherein. SCILLCmakesnowarranty,representationorguaranteeregardingthesuitabilityofitsproductsforanyparticular  
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including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or  
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be  
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.  
SCILLCproductsarenotdesigned, intended, orauthorizedforuseascomponentsinsystemsintendedforsurgicalimplantintothebody, orotherapplications  
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MC33157/D  

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