MCR100-8 [MOTOROLA]

Silicon Controlled Rectifiers(Reverse Blocking Triode Thyristors); 可控硅整流器（反向阻断三极晶闸管）


型号：	MCR100-8
厂家：	MOTOROLA
描述：	Silicon Controlled Rectifiers(Reverse Blocking Triode Thyristors) 可控硅整流器（反向阻断三极晶闸管）触发装置可控硅整流器
文件：	总4页 (文件大小：85K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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by MCR100/D

SEMICONDUCTOR TECHNICAL DATA

Reverse Blocking Triode Thyristors

*Motorola preferred devices

PNPN devices designed for high volume, line-powered consumer applications such

as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and

sensing and detection circuits. Supplied in an inexpensive plastic TO-226AA package

which is readily adaptable for use in automatic insertion equipment.

SCRs

0.8 AMPERE RMS

100 thru 600 VOLTS

•

Sensitive Gate Trigger Current — 200 µA Maximum

Low Reverse and Forward Blocking Current — 100 µA Maximum, T = 125°C

Low Holding Current — 5 mA Maximum

Glass-Passivated Surface for Reliability and Uniformity

CASE 29-04

(TO-226AA)

STYLE 10

MAXIMUM RATINGS (T = 25°C unless otherwise noted.)

Rating

Symbol

Value

Unit

(1)

Peak Repetitive Forward and Reverse Blocking Voltage

(T = 25 to 125°C, R = 1 kΩ MCR100-3

Volts

DRM

and

100

200

400

600

MCR100-4

MCR100-6

MCR100-8

RRM

Forward Current RMS (See Figures 1 & 2)

(All Conduction Angles)

0.8

Amps

T(RMS)

Peak Forward Surge Current, T = 25°C

TSM

(1/2 Cycle, Sine Wave, 60 Hz)

I t

A s

Circuit Fusing Considerations

(t = 8.3 ms)

0.415

Peak Gate Power — Forward, T = 25°C

0.1

0.01

Watts

Watt

Amp

Average Gate Power — Forward, T = 25°C

GF(AV)

Peak Gate Current — Forward, T = 25°C

GFM

(300 µs, 120 PPS)

Peak Gate Voltage — Reverse

Operating Junction Temperature Range @ Rated V

Storage Temperature Range

Lead Solder Temperature

Volts

°C

GRM

and V

DRM

–40 to +125

–40 to +150

+230

RRM

°C

stg

—

°C

(

1/16 from case, 10 s max)

1. V

and V

for alltypes canbe appliedon a continuous basis. Ratings apply for zeroor negativegate voltage;however, positivegate

RRM

DRM

voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current

source such that the voltage ratings of the devices are exceeded.

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola Thyristor Device Data

Motorola, Inc. 1995

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

°C/W

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

θJC

200

θJA

ELECTRICAL CHARACTERISTICS (T = 25°C, R

= 1 kΩ unless otherwise noted.)

Characteristic

Symbol

I , I

DRM RRM

Min

Max

Unit

Peak Forward or Reverse Blocking Current

= Rated V

or V

)

= 25°C

= 125°C

—

100

µA

DRM

RRM

(1)

Forward “On” Voltage

(I = 1 A Peak @ T = 25°C)

—

1.7

Volts

(2)

Gate Trigger Current (Continuous dc)

= 25°C

—

200

µA

(Anode Voltage = 7 Vdc, R = 100 Ohms)

Gate Trigger Voltage (Continuous dc)

= 25°C

= –40°C

= 125°C

—

0.1

0.8

1.2

—

Volts

(Anode Voltage = 7 Vdc, R = 100 Ohms)

(Anode Voltage = Rated V

, R = 100 Ohms)

DRM

Holding Current

(Anode Voltage = 7 Vdc, initiating current = 20 mA)

= 25°C

= –40°C

—

1. Forward current applied for 1 ms maximum duration, duty cycle

2. R current is not included in measurement.

1%.

FIGURE 1 – MCR100-7, MCR100-8 CURRENT DERATING

(REFERENCE: CASE TEMPERATURE)

FIGURE 2 – MCR100-7, MCR100-8 CURRENT DERATING

(REFERENCE: AMBIENT TEMPERATURE)

120

= CONDUCTION ANGLE

CASE MEASUREMENT

= CONDUCTION ANGLE

110

100

POINT — CENTER OF

FLAT PORTION

100

TYPICAL PRINTED

CIRCUIT BOARD

MOUNTING

180°

= 30

120°

60°

90°

= 30

60°

90°

120°

180°

0.1

0.2

0.3

0.4

0.1

0.2

0.3

0.4

0.5

, AVERAGE ON-STATE CURRENT (AMP)

T(AV)

Motorola Thyristor Device Data

PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. CONTOUR OF PACKAGE BEYOND DIMENSION R

IS UNCONTROLLED.

4. DIMENSION F APPLIES BETWEEN P AND L.

DIMENSION D AND J APPLY BETWEEN L AND K

MINIMUM. LEAD DIMENSION IS UNCONTROLLED

IN P AND BEYOND DIMENSION K MINIMUM.

STYLE 10:

PIN 1. CATHODE

2. GATE

3. ANODE

SEATING

PLANE

INCHES

MIN

MILLIMETERS

DIM

MAX

0.205

0.210

0.165

0.022

0.019

0.055

0.105

0.020

–––

MIN

4.45

4.32

3.18

0.41

1.15

2.42

0.39

12.70

6.35

2.04

–––

MAX

5.20

5.33

4.19

0.55

0.48

1.39

2.66

0.50

–––

0.175

0.170

0.125

0.016

0.045

0.095

0.015

0.500

0.250

0.080

–––

X X

–––

SECTION X–X

0.105

0.100

–––

2.66

2.54

–––

0.115

0.135

2.93

3.43

–––

CASE 29-04

(TO–226AA)

Motorola Thyristor Device Data

Motorolareserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representationorguaranteeregarding

the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and

specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different

applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does

not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in

systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of

the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such

unintendedor unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless

against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.

Motorola and

are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

Literature Distribution Centers:

USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036.

EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England.

JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan.

ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong.

Motorola Thyristor Device Data

MCR100/D

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