MGSF3455XT1 [MOTOROLA]
P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET; P沟道增强型MOSFET TMOS
| 型号： | MGSF3455XT1 |
| 厂家： | 
MOTOROLA |
| 描述： | P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET |
| 文件： | 总4页 (文件大小：89K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Order this document
by MGSF3455XT1/D
SEMICONDUCTOR TECHNICAL DATA
Motorola Preferred Device
P–CHANNEL
ENHANCEMENT–MODE
TMOS MOSFET
r
= 80 mΩ (TYP)
DS(on)
Part of the GreenLine Portfolio of devices with energy–
conserving traits.
D
D
S
These miniature surface mount MOSFETs utilize Motorola’s High
Cell Density, HDTMOS process. Low r
assures minimal
DS(on)
1 2 5 6
D
power loss and conserves energy, making this device ideal for use
in small power management circuitry. Typical applications are
dc–dc converters, power management in portable and battery–
powered products such as computers, printers, PCMCIA cards,
cellular and cordless telephones.
DRAIN
D
G
CASE 318G–02, Style 1
TSOP 6 PLASTIC
3
•
•
•
Low r Provides Higher Efficiency and Extends Battery Life
DS(on)
Miniature TSOP 6 Surface Mount Package Saves Board Space
GATE
SOURCE
4
Visit our Web Site at http://www.mot–sps.com/ospd
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Rating
Drain–to–Source Voltage
Symbol
Value
30
Unit
Vdc
Vdc
A
V
DSS
Gate–to–Source Voltage — Continuous
V
GS
± 20
Drain Current — Continuous @ T = 25°C
I
D
1.45
10
A
Drain Current — Pulsed Drain Current (t ≤ 10 µs)
I
p
DM
Total Power Dissipation @ T = 25°C
P
400
– 55 to 150
300
mW
°C
A
D
Operating and Storage Temperature Range
T , T
J
stg
Thermal Resistance — Junction–to–Ambient
R
°C/W
°C
θJA
Maximum Lead Temperature for Soldering Purposes, for 10 seconds
T
260
L
ORDERING INFORMATION
Device
Reel Size
Tape Width
Quantity
MGSF3455XT1
MGSF3455XT3
7″
8 mm embossed tape
8 mm embossed tape
3000
13″
10,000
GreenLine is a trademark of Motorola, Inc.
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola, Inc. 1997
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
V
Vdc
(BR)DSS
(V
GS
= 0 Vdc, I = 10 µA)
30
—
—
D
Zero Gate Voltage Drain Current
I
µAdc
DSS
(V
DS
(V
DS
= 30 Vdc, V
= 30 Vdc, V
= 0 Vdc)
= 0 Vdc, T = 70°C)
—
—
—
—
1.0
5.0
GS
GS
J
Gate–Body Leakage Current (V
GS
= ± 20 Vdc, V
= 0)
I
—
—
±100
nAdc
DS
GSS
(1)
ON CHARACTERISTICS
Gate Threshold Voltage
V
Vdc
GS(th)
(V
DS
= V , I = 250 µAdc)
GS
1.0
—
—
D
Static Drain–to–Source On–Resistance
r
Ohms
DS(on)
(V
GS
(V
GS
= 10 Vdc, I = 1.45 A)
—
—
0.080
0.134
0.100
0.190
D
= 4.5 Vdc, I = 1.2 A)
D
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
= 5.0 V)
= 5.0 V)
= 5.0 V)
C
—
—
—
90
50
10
—
—
—
pF
ns
DS
DS
DG
iss
Output Capacitance
(V
(V
C
oss
Transfer Capacitance
C
rss
(2)
SWITCHING CHARACTERISTICS
Turn–On Delay Time
t
—
—
—
—
—
10
15
20
30
35
20
—
d(on)
Rise Time
t
r
(V
DD
V
= 15 Vdc, I = 1.0 A,
D
= 10 V, R = 10 Ω)
GEN
L
Turn–Off Delay Time
Fall Time
t
20
d(off)
t
10
f
Gate Charge
Q
3000
pC
T
SOURCE–DRAIN DIODE CHARACTERISTICS
Continuous Current
I
—
—
—
—
—
1.0
5.0
—
A
A
V
S
Pulsed Current
I
SM
(2)
Forward Voltage
V
SD
0.85
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
INFORMATION FOR USING THE TSOP–6 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.094
2.4
0.037
0.95
0.074
1.9
0.037
0.95
0.028
0.7
0.039
1.0
inches
mm
TSOP–6
TSOP–6 POWER DISSIPATION
The power dissipation of the TSOP–6 is a function of the
drain pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power dissipation.
Power dissipation for a surface mount device is determined
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
by T
, the maximum rated junction temperature of the
, the thermal resistance from the device junction to
J(max)
die, R
θJA
ambient, and the operating temperature, T . Using the
A
values provided on the data sheet for the TSOP–6 package,
P
can be calculated as follows:
D
•
•
Always preheat the device.
The delta temperature between the preheat and
soldering should be 100°C or less.*
When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference shall be a maximum of 10°C.
T
– T
A
J(max)
P
=
D
R
θJA
•
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature T of 25°C, one can
A
calculate the power dissipation of the device which in this
case is 400 milliwatts.
•
•
•
The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
When shifting from preheating to soldering, the
maximum temperature gradient shall be 5°C or less.
After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
150°C – 25°C
300°C/W
P
=
= 400 milliwatts
D
The 300°C/W for the TSOP–6 package assumes the use
of the recommended footprint on a glass epoxy printed circuit
board to achieve a power dissipation of 400 milliwatts. There
are other alternatives to achieving higher power dissipation
from the TSOP–6 package. Another alternative would be to
use a ceramic substrate or an aluminum core board such as
Thermal Clad . Using a board material such as Thermal
Clad, an aluminum core board, the power dissipation can be
doubled using the same footprint.
•
Mechanical stress or shock should not be applied during
cooling.
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
PACKAGE DIMENSIONS
A
NOTES:
L
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
6
5
2
4
B
S
1
3
MILLIMETERS
INCHES
MIN MAX
DIM
A
B
MIN
2.90
1.30
0.90
0.25
0.85
0.013
0.10
0.20
1.25
0
MAX
3.10
1.70
1.10
0.50
1.05
0.100
0.26
0.60
1.55
10
D
0.1142 0.1220
0.0512 0.0669
0.0354 0.0433
0.0098 0.0197
0.0335 0.0413
0.0005 0.0040
0.0040 0.0102
0.0079 0.0236
0.0493 0.0610
G
C
D
M
J
G
H
J
C
0.05 (0.002)
K
L
M
S
K
0
10
H
2.50
3.00
0.0985 0.1181
STYLE 1:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. SOURCE
5. DRAIN
6. DRAIN
CASE 318G–02
ISSUE A
TSOP 6 PLASTIC
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specificallydisclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
datasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemayvaryovertime. Alloperatingparameters,including“Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applicationsintended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
ordeathmayoccur. ShouldBuyerpurchaseoruseMotorolaproductsforanysuchunintendedorunauthorizedapplication,BuyershallindemnifyandholdMotorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and
Opportunity/Affirmative Action Employer.
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
This device has a class 1 ESD rating.
Mfax is a trademark of Motorola, Inc.
How to reach us:
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INTERNET: http://www.mot.com/SPS/
MGSF3455XT1/D
◊
相关型号：
MGSF3455XT3
Small Signal Field-Effect Transistor, 1.45A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
MOTOROLA
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