MGY25N120 [MOTOROLA]
Insulated Gate Bipolar Transistor; 绝缘栅双极晶体管
| 型号： | MGY25N120 |
| 厂家： | 
MOTOROLA |
| 描述： | Insulated Gate Bipolar Transistor |
| 文件： | 总6页 (文件大小：231K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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by MGY25N120/D
SEMICONDUCTOR TECHNICAL DATA
Motorola Preferred Device
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) uses an advanced
termination scheme to provide an enhanced and reliable high
voltage–blocking capability. Short circuit rated IGBT’s are specifi-
cally suited for applications requiring a guaranteed short circuit
withstand time. Fast switching characteristics result in efficient
operation at high frequencies.
IGBT IN TO–264
25 A @ 90°C
38 A @ 25°C
1200 VOLTS
SHORT CIRCUIT RATED
•
•
•
•
Industry Standard High Power TO–264 Package (TO–3PBL)
High Speed E : 273 J/A typical at 125°C
off
High Short Circuit Capability – 10 s minimum
Robust High Voltage Termination
C
E
G
C
E
G
CASE 340G–02, Style 5
TO–264
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Rating
Symbol
Value
1200
1200
±20
Unit
Vdc
Vdc
Vdc
Adc
Collector–Emitter Voltage
V
CES
Collector–Gate Voltage (R
GE
= 1.0 MΩ)
V
CGR
Gate–Emitter Voltage — Continuous
V
GE
Collector Current — Continuous @ T = 25°C
I
I
I
38
25
76
C
C
C25
C90
CM
— Continuous @ T = 90°C
— Repetitive Pulsed Current (1)
Apk
Total Power Dissipation @ T = 25°C
Derate above 25°C
P
D
212
1.69
Watts
W/°C
C
Operating and Storage Junction Temperature Range
Short Circuit Withstand Time
T , T
stg
–55 to 150
10
°C
J
t
sc
s
(V
CC
= 720 Vdc, V = 15 Vdc, T = 125°C, R = 20 Ω)
GE J G
Thermal Resistance — Junction to Case – IGBT
— Junction to Ambient
R
R
0.6
35
°C/W
°C
θJC
θJA
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds
Mounting Torque, 6–32 or M3 screw
T
260
L
10 lbf in (1.13 N m)
(1) Pulse width is limited by maximum junction temperature. Repetitive rating.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola, Inc. 1996
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–to–Emitter Breakdown Voltage
BV
Vdc
CES
(V
GE
= 0 Vdc, I = 25 µAdc)
1200
—
—
960
—
—
C
Temperature Coefficient (Positive)
Emitter–to–Collector Breakdown Voltage (V
Zero Gate Voltage Collector Current
mV/°C
Vdc
= 0 Vdc, I
EC
= 100 mAdc)
BV
25
—
—
GE
ECS
I
µAdc
CES
(V
CE
(V
CE
= 1200 Vdc, V
= 1200 Vdc, V
= 0 Vdc)
= 0 Vdc, T = 125°C)
—
—
—
—
100
2500
GE
GE
J
Gate–Body Leakage Current (V
= ± 20 Vdc, V
CE
= 0 Vdc)
I
—
—
250
nAdc
Vdc
GE
GES
ON CHARACTERISTICS (1)
Collector–to–Emitter On–State Voltage
V
CE(on)
(V
GE
(V
GE
(V
GE
= 15 Vdc, I = 12.5 Adc)
—
—
—
2.37
2.15
2.98
3.24
—
4.19
C
= 15 Vdc, I = 12.5 Adc, T = 125°C)
C
J
= 15 Vdc, I = 25 Adc)
C
Gate Threshold Voltage
(V = V , I = 1.0 mAdc)
Threshold Temperature Coefficient (Negative)
V
Vdc
GE(th)
4.0
—
6.0
10
8.0
—
CE GE
C
mV/°C
Forward Transconductance (V = 10 Vdc, I = 25 Adc)
g
fe
—
12
—
Mhos
CE
C
DYNAMIC CHARACTERISTICS
Input Capacitance
C
—
—
—
2795
181
45
—
—
—
pF
ns
ies
(V
(V
= 25 Vdc, V = 0 Vdc,
GE
CE
Output Capacitance
C
oes
f = 1.0 MHz)
Transfer Capacitance
C
res
SWITCHING CHARACTERISTICS (1)
Turn–On Delay Time
t
—
—
—
—
—
—
—
—
—
—
—
—
—
91
124
196
310
2.44
88
—
—
d(on)
Rise Time
t
= 720 Vdc, I = 25 Adc,
r
CC
C
V
= 15 Vdc, L = 300 H
GE
G
Turn–Off Delay Time
Fall Time
t
—
d(off)
R
= 20 Ω, T = 25°C)
J
Energy losses include “tail”
t
f
—
Turn–Off Switching Loss
Turn–On Delay Time
Rise Time
E
4.69
—
mJ
ns
off
t
d(on)
t
126
236
640
5.40
97
—
(V
CC
V
= 720 Vdc, I = 25 Adc,
C
r
= 15 Vdc, L = 300 H
GE
G
Turn–Off Delay Time
Fall Time
t
—
d(off)
R
= 20 Ω, T = 125°C)
J
Energy losses include “tail”
t
f
—
Turn–Off Switching Loss
Gate Charge
E
—
mJ
nC
off
Q
—
T
1
2
(V
CC
= 720 Vdc, I = 25 Adc,
C
Q
Q
31
—
V
GE
= 15 Vdc)
40
—
INTERNAL PACKAGE INDUCTANCE
Internal Emitter Inductance
(Measured from the emitter lead 0.25″ from package to emitter bond pad)
L
E
nH
—
13
—
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
2
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
75
75
60
45
30
V
= 20 V
V
= 20 V
T
= 125°C
T
= 25°C
17.5 V
17.5 V
GE
GE
J
J
15 V
60
45
30
15 V
12.5 V
12.5 V
10 V
10 V
15
0
15
0
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
V
, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
V
, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
CE
CE
Figure 1. Output Characteristics, T = 25°C
Figure 2. Output Characteristics, T = 125°C
J
J
70
60
50
40
30
20
4
3
V
= 15 V
V
= 10 V
GE
250
CE
250
µs PULSE WIDTH
µs PULSE WIDTH
T
= 125°C
I
= 20 A
J
C
15 A
10 A
2
1
25°C
10
0
4
6
8
10
12
14
16
–50
0
50
100
C)
150
V
, GATE–TO–EMITTER VOLTAGE (VOLTS)
T , JUNCTION TEMPERATURE (°
J
GE
Figure 3. Transfer Characteristics
Figure 4. Collector–to–Emitter Saturation
Voltage versus Junction Temperature
10000
1000
16
V
= 0 V
T
= 25°C
CE
J
Q
T
14
12
C
ies
10
8
Q
Q
2
1
C
C
oes
6
4
100
res
T
= 25°C
= 25 A
J
I
C
2
0
10
0
5
10
15
20
25
0
5
10 15 20 25 30 35 40 45 50 55 60 65 70
Q , TOTAL GATE CHARGE (nC)
GATE–TO–EMITTER OR COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
g
Figure 5. Capacitance Variation
Figure 6. Gate–to–Emitter Voltage versus
Total Charge
Motorola TMOS Power MOSFET Transistor Device Data
3
6
5.5
5
7
6
5
4
3
V
V
R
= 720 V
= 15 V
= 20 Ω
I
= 25 A
CC
GE
G
C
V
V
= 720 V
= 15 V
= 125°C
CC
GE
I
= 25 A
C
T
I
J
4.5
4
= 25 A
C
15 A
15 A
10 A
3.5
3
2
1
10 A
30
2.5
2
0
10
20
40
50
25
50
75
100
125
150
R
, GATE RESISTANCE (OHMS)
T
, CASE TEMPERATURE (°C)
G
C
Figure 7. Total Switching Losses versus
Gate Resistance
Figure 8. Total Switching Losses versus
Case Temperature
7
50
40
30
20
V
V
R
= 720 V
= 15 V
= 20 Ω
CC
GE
G
6
5
4
T
= 125°C
J
T
= 125°C
J
T
= 25°C
J
3
2
10
0
1
0
0
5
10
15
20
25
0
1
2
3
4
5
I
, COLLECTOR–TO–EMITTER CURRENT (AMPS)
V , FORWARD VOLTAGE DROP (VOLTS)
FM
C
Figure 9. Turn–Off Losses versus
Collector–to–Emitter Current
Figure 10. Maximum Forward Drop versus
Instantaneous Forward Current
100
10
1
V
R
= 15 V
GE
= 20 Ω
GE
= 125°C
T
J
0.1
1
10
100
1000
V
, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
CE
Figure 11. Reverse Biased
Safe Operating Area
4
Motorola TMOS Power MOSFET Transistor Device Data
1.0
D = 0.5
0.2
0.1
0.05
0.02
0.1
P
(pk)
R
(t) = r(t) R
JC θJC
θ
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
0.01
SINGLE PULSE
t
READ TIME AT t
T
1
1
t
– T = P R (t)
(pk) θJC
2
J(pk)
C
DUTY CYCLE, D = t /t
1 2
0.01
1.0E–05
1.0E–04
1.0E–03
1.0E–02
t, TIME (s)
1.0E–01
1.0E+00
1.0E+01
Figure 12. Thermal Response
Motorola TMOS Power MOSFET Transistor Device Data
5
PACKAGE DIMENSIONS
M
M
0.25 (0.010)
T B
–Q–
U
–T–
NOTES:
–B–
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
C
E
MILLIMETERS
INCHES
N
DIM
A
B
C
D
E
MIN
2.8
MAX
2.9
MIN
MAX
1.142
0.800
0.209
0.058
0.083
0.102
1.102
0.760
0.185
0.037
0.075
0.087
A
K
19.3
4.7
20.3
5.3
0.93
1.9
1.48
2.1
L
1
2
3
R
F
2.2
2.4
–Y–
G
H
J
K
L
N
P
Q
R
U
W
5.45 BSC
0.215 BSC
2.6
0.43
17.6
11.0
3.95
2.2
3.0
0.78
18.8
11.4
4.75
2.6
0.102
0.017
0.693
0.433
0.156
0.087
0.122
0.085
0.240
0.110
0.118
0.031
0.740
0.449
0.187
0.102
0.137
0.093
0.256
0.125
P
W
3.1
3.5
F 2 PL
2.15
6.1
2.35
6.5
G
J
H
2.8
3.2
D 3 PL
0.25 (0.010)
STYLE 5:
PIN 1. GATE
M
S
Y
Q
2. COLLECTOR
3. EMITTER
CASE 340G–02
TO–264
ISSUE E
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specificallydisclaims any and all liability, includingwithoutlimitationconsequentialorincidentaldamages. “Typical” parameters which may be provided in Motorola
datasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemayvaryovertime. Alloperatingparameters,including“Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
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and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and
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are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
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MGY25N120/D
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