MJ1250 [MOTOROLA]
10 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.80 VOLTS 150 WATTS; 10安培达林顿功率晶体管互补硅60.80伏150瓦
| 型号： | MJ1250 |
| 厂家： | 
MOTOROLA |
| 描述： | 10 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.80 VOLTS 150 WATTS |
| 文件： | 总4页 (文件大小：135K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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by MJ2500/D
SEMICONDUCTOR TECHNICAL DATA
. . . for use as output devices in complementary general purpose amplifier applica-
tions.
•
•
High DC Current Gain — h = 4000 (Typ) @ I = 5.0 Adc
FE C
Monolithic Construction with Built–in Base–Emitter Shunt Resistors
MAXIMUM RATINGS
*Motorola Preferred Device
MJ2500
MJ3000
MJ2501
MJ3001
10 AMPERE
DARLINGTON
POWER TRANSISTORS
COMPLEMENTARY
SILICON
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current
Symbol
Unit
Vdc
Vdc
Vdc
Adc
Adc
V
CEO
60
60
80
80
V
CB
V
EB
5.0
10
60–80 VOLTS
150 WATTS
I
C
Base Current
I
B
0.2
Total Device Dissipation
P
D
@ T = 25 C
150
0.857
Watts
W/ C
C
Derate above 25 C
Operating and Storage Junction
Temperature Range
T , T
–55 to +200
C
J
stg
THERMAL CHARACTERISTICS
Characteristic
CASE 1–07
TO–204AA
(TO–3)
Symbol
Max
Unit
Thermal Resistance, Junction to Case
θ
1.17
C/W
JC
PNP
COLLECTOR
NPN
COLLECTOR
MJ2500
MJ2501
MJ3000
MJ3001
BASE
BASE
2.0 k
50
2.0 k
50
EMITTER
EMITTER
Figure 1. Darlington Circuit Schematic
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 7
Motorola, Inc. 1995
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
(1)
Collector Emitter Breakdown Voltage
MJ2500, MJ3000
MJ2501, MJ3001
V
60
80
—
—
Vdc
(BR)CEO
(I = 100 mAdc, I = 0)
C
B
Collector–Emitter Leakage Current
I
mAdc
CER
(V
EB
(V
EB
(V
EB
(V
EB
= 60 Vdc, R
= 80 Vdc, R
= 60 Vdc, R
= 80 Vdc, R
= 1.0 k ohm)
= 1.0 k ohm)
= 1.0 k ohm, T = 150 C)
MJ2500, MJ3000
MJ2501, MJ3001
MJ2500, MJ3000
MJ2501, MJ3001
—
—
—
—
1.0
1.0
5.0
5.0
BE
BE
BE
BE
C
= 1.0 k ohm, T = 150 C)
C
Emitter Cutoff Current (V
BE
= 5.0 Vdc, I = 0)
I
—
2.0
mAdc
mAdc
C
EBO
CEO
Collector Emitter Leakage Current (V
(V
= 30 Vdc, I = 0)
MJ2500, MJ3000
MJ2501, MJ3001
I
—
—
1.0
1.0
CE
CE
B
B
= 40 Vdc, I = 0)
(1)
ON CHARACTERISTICS
DC Current Gain (I = 5.0 Adc, V
= 3.0 Vdc)
h
FE
1000
—
—
C
CE
Collector–Emitter Saturation Voltage (I = 5.0 Adc, I = 20 mAdc)
V
CE(sat)
—
—
2.0
4.0
Vdc
C
B
(I = 10 Adc, I = 50 mAdc)
C
B
Base Emitter Voltage (I = 5.0 Adc, V
= 3.0 Vdc)
V
BE(on)
—
3.0
Vdc
C
CE
(1)
Pulse Test: Pulse Width
300 µs, Duty Cycle
2.0%.
50,000
3000
2000
20,000
10,000
5000
1000
T
= 150°C
J
500
25°C
2000
1000
500
300
200
T
V
= 25°C
C
100
= 3.0 Vdc
CE
= 5.0 Adc
–55
°C
200
100
50
I
C
V
= 3.0 Vdc
5.0
CE
50
30
0.01 0.02
0.05
0.1
0.2
0.5
1.0
2.0
10
3
4
5
6
10
10
10
10
f, FREQUENCY (Hz)
I
, COLLECTOR CURRENT (AMP)
C
Figure 2. DC Current Gain
Figure 3. Small–Signal Current Gain
3.5
10
7.0
5.0
T
= 25°C
J
3.0
2.5
2.0
3.0
2.0
SECONDARY BREAKDOWN LIMITED
THERMALLY LIMITED @ T = 25°C
C
BONDING WIRE LIMITED
1.0
0.7
0.5
V
@ I /I = 250
C B
BE(sat)
1.5
1.0
V
@ V = 3.0 V
CE
BE
0.3
0.2
V
@ I /I = 250
C B
0.5
0
CE(sat)
MJ2500, MJ3000
MJ2501, MJ3001
T
= 200°C
J
0.1
1.0
0.01 0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
2.0 3.0
5.0 7.0 10
20
30
50 70 100
I
, COLLECTOR CURRENT (AMP)
V , COLLECTOR–EMITTER VOLTAGE (VOLTS)
CE
C
Figure 4. “On” Voltages
Figure 5. DC Safe Operating Area
There are two limitations on the power handling ability of a
transistor: junction temperature and secondary breakdown.
than the curves indicate.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the limita-
tions imposed by secondary breakdown.
Safe operating area curves indicate I – V
limits of the
C
CE
transistor that must be observed for reliable operation; e.g.,
the transistor must not be subjected to greater dissipation
2
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
A
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
C
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO–204AA OUTLINE SHALL APPLY.
SEATING
PLANE
–T–
E
K
D 2 PL
0.13 (0.005)
INCHES
MIN MAX
1.550 REF
MILLIMETERS
M
M
M
T
Q
Y
DIM
A
B
C
D
E
MIN
MAX
39.37 REF
U
–––
0.250
0.038
0.055
1.050
–––
6.35
0.97
1.40
26.67
8.51
1.09
1.77
–Y–
L
V
H
0.335
0.043
0.070
2
1
G
H
K
L
0.430 BSC
0.215 BSC
0.440 0.480
0.665 BSC
10.92 BSC
5.46 BSC
B
G
11.18
12.19
16.89 BSC
N
Q
U
V
–––
0.151
1.187 BSC
0.131
0.830
–––
3.84
30.15 BSC
3.33
21.08
4.19
–Q–
0.165
0.188
M
M
0.13 (0.005)
T Y
4.77
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
CASE 1–07
TO–204AA (TO–3)
ISSUE Z
3
Motorola Bipolar Power Transistor Device Data
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
andspecifically disclaims any and all liability, includingwithoutlimitationconsequentialorincidentaldamages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
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MJ2500/D
◊
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