MJ15001 [MOTOROLA]
15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 140 VOLTS 200 WATTS; 15安培功率晶体管互补硅140伏200瓦型号: | MJ15001 |
厂家: | MOTOROLA |
描述: | 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 140 VOLTS 200 WATTS |
文件: | 总4页 (文件大小:169K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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by MJ15001/D
SEMICONDUCTOR TECHNICAL DATA
The MJ15001 and MJ15002 are EpiBase power transistors designed for high
power audio, disk head positioners and other linear applications.
15 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
•
High Safe Operating Area (100% Tested) —
200 W @ 40 V
50 W @ 100 V
For Low Distortion Complementary Designs
High DC Current Gain —
•
•
140 VOLTS
200 WATTS
h
FE
= 25 (Min) @ I = 4 Adc
C
CASE 1–07
TO–204AA
(TO–3)
MAXIMUM RATINGS
Rating
Symbol
Value
140
140
5
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
V
CEO
V
CBO
V
EBO
Collector Current — Continuous
Base Current — Continuous
Emitter Current — Continuous
I
C
15
I
5
B
E
I
20
Total Power Dissipation @ T = 25 C
C
Derate above 25 C
P
D
200
1.14
Watts
W/ C
Operating and Storage Junction Temperature Range
T , T
–65 to +200
C
J
stg
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
0.875
265
Unit
C/W
C
Thermal Resistance, Junction to Case
R
θJC
Maximum Lead Temperature for Soldering Purposes:
T
L
1/16″ from Case for
10 seconds
Motorola, Inc. 1995
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
V
140
—
Vdc
CEO(sus)
(I , = 200 mAdc, I = 0)
C
B
Collector Cutoff Current
I
CEX
(V
CE
(V
CE
= 140 Vdc, V
= 140 Vdc, V
= 1.5 Vdc)
= 1.5 Vdc, T = 150 C)
—
—
100
2
µAdc
mAdc
BE(off)
BE(off)
C
Collector Cutoff Current
(V = 140 Vdc, I = 0)
I
—
250
µAdc
µAdc
CEO
CE
Emitter Cutoff Current
(V = 5 Vdc, I = 0)
B
I
—
100
EBO
EB
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
C
I
Adc
S/b
(V
CE
(V
CE
= 40 Vdc, t = 1 s (non–repetitive))
= 100 Vdc, t = 1 s (non–repetitive))
5
0.5
—
—
ON CHARACTERISTICS
DC Current Gain
(I = 4 Adc, V
C CE
h
25
—
—
150
1
—
FE
= 2 Vdc)
Collector–Emitter Saturation Voltage
(I = 4 Adc, I = 0.4 Adc)
V
Vdc
Vdc
CE(sat)
C
B
Base–Emitter On Voltage
(I = 4 Adc, V = 2 Vdc)
V
2
BE(on)
C
CE
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
f
2
—
MHz
pF
T
(I = 0.5 Adc, V
C CE
= 10 Vdc, f = 0.5 MHz)
test
Output Capacitance
(V = 10 Vdc, I = 0, f
C
—
1000
ob
= 1 MHz)
CB test
E
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle
2%.
200
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
T
= 25°C
C
10
down. Safe operating area curves indicate I – V
limits of
C
CE
7
5
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
3
2
The data of Figure 1 is based on T
= 200 C; T is
C
J (pk)
variable depending on conditions. At high case temper-
atures, thermal limitations will reduce the power that can be
handled to values less than the limitations imposed by
second breakdown.
T
= 200°C
J
1
BONDING WIRE LIMITED
THERMAL LIMITATION (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
0.7
0.5
CURVES APPLY BELOW RATED V
CEO
0.3
0.2
2
3
5
7
10
20
30
50 70 100
200
V
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
CE
Figure 1. Active–Region Safe Operating Area
2
Motorola Bipolar Power Transistor Device Data
TYPICAL CHARACTERISTICS
1000
700
500
10
9
8
7
6
5
T
= 25°C
J
C
C
ib
MJ15002 (PNP)
300
200
ib
T
V
= 25°C
J
C
C
ob
= 10 V
CE
100
70
f
= 0.5 MHz
test
4
3
2
50
ob
MJ15001 (NPN)
30
20
MJ15001 (NPN)
MJ15002 (PNP)
1
0
10
1.5
2
3
5
7
10
20
30
50 70 100 150
0.1
0.2 0.3
0.5 0.7
I , COLLECTOR CURRENT (AMP)
C
1
2
3
5
7
10
V
, REVERSE VOLTAGE (VOLTS)
R
Figure 2. Capacitances
Figure 3. Current–Gain — Bandwidth Product
MJ15001
MJ15002
200
100
200
100
V
= 2 Vdc
V
= 2 Vdc
CE
CE
T
= 100°C
J
T
= 100°C
J
25°C
70
50
70
50
25°C
30
20
30
20
10
10
7
5
7
5
3
2
3
2
0.2 0.3
0.5 0.7
1
2
3
5
7
10
20
0.2 0.3
0.5 0.7
1
2
3
5
7
10
20
I
, COLLECTOR CURRENT (AMP)
I
, COLLECTOR CURRENT (AMP)
C
C
Figure 4. DC Current Gain
MJ15001
MJ15002
2.0
2.0
1.6
1.6
1.2
0.8
0.4
0
1.2
0.8
V
@ V
CE
= 2 Vdc
V
BE
@ V = 2 Vdc
CE
BE
T
J
= 25°C
T
= 25
°
C
J
T
= 100°C
T
= 100°C
J
J
100°C
0.4
100°C
V @ I /I = 10
CE(sat) C B
V
@ I /I = 10
C B
CE(sat)
25°C
25°C
0
0.2 0.3
0.5 0.7
1
2
3
5
7
10
20
0.2 0.3
0.5 0.7
1
2
3
5
7
10
20
I
, COLLECTOR CURRENT (AMP)
I , COLLECTOR CURRENT (AMP)
C
C
Figure 5. “On” Voltages
3
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
A
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
C
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO–204AA OUTLINE SHALL APPLY.
SEATING
PLANE
–T–
E
K
D 2 PL
0.13 (0.005)
INCHES
MIN MAX
1.550 REF
MILLIMETERS
M
M
M
T
Q
Y
DIM
A
B
C
D
E
MIN
MAX
39.37 REF
U
–––
0.250
0.038
0.055
1.050
–––
6.35
0.97
1.40
26.67
8.51
1.09
1.77
–Y–
L
V
H
0.335
0.043
0.070
2
1
G
H
K
L
0.430 BSC
0.215 BSC
0.440 0.480
0.665 BSC
10.92 BSC
5.46 BSC
B
G
11.18
12.19
16.89 BSC
N
Q
U
V
–––
0.151
1.187 BSC
0.131
0.830
–––
3.84
30.15 BSC
3.33
21.08
4.19
–Q–
0.165
0.188
M
M
0.13 (0.005)
T Y
4.77
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
CASE 1–07
TO–204AA (TO–3)
ISSUE Z
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
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MJ15001/D
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