MJD112T4 [MOTOROLA]
SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS; 硅功率晶体管2安培100伏20瓦
| 型号： | MJD112T4 |
| 厂家： | 
MOTOROLA |
| 描述： | SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS |
| 文件： | 总6页 (文件大小：309K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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by MJD112/D
SEMICONDUCTOR TECHNICAL DATA
DPAK For Surface Mount Applications
*Motorola Preferred Device
Designed for general purpose power and switching such as output or driver stages
in applications such as switching regulators, converters, and power amplifiers.
SILICON
POWER TRANSISTORS
2 AMPERES
•
•
•
•
•
•
•
Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
Straight Lead Version in Plastic Sleeves (“1” Suffix)
Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)
Surface Mount Replacements for TIP110–TIP117 Series
Monolithic Construction With Built–in Base–Emitter Shunt Resistors
100 VOLTS
20 WATTS
High DC Current Gain — h
Complementary Pairs Simplifies Designs
= 2500 (Typ) @ I = 2.0 Adc
FE
C
MAXIMUM RATINGS
MJD112
MJD117
Rating
Symbol
Unit
Vdc
Vdc
Vdc
Adc
CASE 369A–13
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
V
CEO
100
100
5
V
CB
V
EB
Collector Current — Continuous
Peak
I
C
2
4
Base Current
I
B
50
mAdc
Total Power Dissipation @ T = 25 C
C
Derate above 25 C
P
D
20
0.16
Watts
W/ C
CASE 369–07
Total Power Dissipation* @ T = 25 C
A
Derate above 25 C
P
D
1.75
0.014
Watts
W/ C
Operating and Storage Junction
Temperature Range
T , T
–65 to +150
C
J
stg
MINIMUM PAD SIZES
RECOMMENDED FOR
SURFACE MOUNTED
APPLICATIONS
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
6.25
71.4
Unit
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient*
R
R
C/W
C/W
θJC
θJA
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)
C
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
Symbol
Min
Max
Unit
V
100
—
—
20
20
2
Vdc
µAdc
µAdc
mAdc
CEO(sus)
(I = 30 mAdc, I = 0)
C
B
Collector Cutoff Current
(V = 50 Vdc, I = 0)
I
CEO
CBO
CE
Collector Cutoff Current
(V = 100 Vdc, I = 0)
B
I
—
CB
Emitter Cutoff Current
(V = 5 Vdc, I = 0)
E
I
—
EBO
inches
mm
BE
* These ratings are applicable when surface mounted on the minimum pad sizes recommended.
(1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2%. (continued)
C
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola, Inc. 1995
*ELECTRICAL CHARACTERISTICS — continued (T = 25 C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS – continued
Collector–Cutoff Current
I
µAdc
CEX
(V
CE
(V
CE
= 80 Vdc, V
= 80 Vdc, V
= 1.5 Vdc)
= 1.5 Vdc, T = 125 C)
—
—
10
500
BE(off)
BE(off)
C
Collector–Cutoff Current (V
CB
= 80 Vdc, I = 0)
I
—
—
10
2
µAdc
E
CBO
Emitter–Cutoff Current (V
= 5 Vdc, I = 0)
I
EBO
mAdc
BE
C
ON CHARACTERISTICS
DC Current Gain
h
FE
—
(I = 0.5 Adc, V
CE
= 3 Vdc)
= 3 Vdc)
= 3 Vdc)
500
1000
200
—
12,000
—
C
(I = 2 Adc, V
(I = 4 Adc, V
C
C
CE
CE
Collector–Emitter Saturation Voltage
(I = 2 Adc, I = 8 mAdc)
V
V
Vdc
CE(sat)
—
—
2
3
C
B
(I = 4 Adc, I = 40 mAdc)
C
B
Base–Emitter Saturation Voltage (I = 4 Adc, I = 40 mAdc)
—
—
4
Vdc
Vdc
C
B
BE(sat)
Base–Emitter On Voltage (I = 2 Adc, V
C
= 3 Vdc)
V
2.8
CE
BE(on)
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
f
25
—
MHz
pF
T
(I = 0.75 Adc, V
C CE
= 10 Vdc, f = 1 MHz)
Output Capacitance
(V = 10 Vdc, I = 0, f = 0.1 MHz)
C
ob
MJD117
MJD112
—
—
200
100
CB
E
* Pulse Test: Pulse Width
300 µs, Duty Cycle
2%.
4
2
R
& R VARIED TO OBTAIN DESIRED CURRENT LEVELS
C
V
B
CC
V
I
= 30 V
I
T
= I
= 25°C
CC
/I = 250
B1 B2
J
D , MUST BE FAST RECOVERY TYPE, e.g.:
–30 V
1
t
s
C B
1N5825 USED ABOVE I
≈
100 mA
100 mA
B
MSD6100 USED BELOW I
≈
B
R
C
SCOPE
TUT
V
2
R
B
t
f
APPROX
+8 V
1
0.8
≈
8 k
≈ 60
D
51
1
t
r
0
0.6
V
1
APPROX
–12 V
+ 4 V
FOR t AND t , D IS DISCONNECTED
0.4
25 µs
t
@ V
= 0 V
d
BE(off)
PNP
NPN
d
2
r
1
t , t
≤
10 ns
r
f
AND V = 0
0.2
0.04
DUTY CYCLE = 1%
0.1
0.2
0.4 0.6
1
2
4
0.06
FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES.
I
, COLLECTOR CURRENT (AMP)
C
Figure 1. Switching Times Test Circuit
Figure 2. Switching Times
Motorolareserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representationorguaranteeregarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
andspecifically disclaims any and all liability, includingwithoutlimitationconsequentialorincidentaldamages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in
systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such
unintendedor unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
Motorola and
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
2
Motorola Bipolar Power Transistor Device Data
1
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
P
(pk)
R
R
= r(t) R
θ
θ
θ
JC(t)
= 6.25
JC
C/W
0.05
°
JC
0.1
0.07
0.05
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
0.01
t
1
t
1
2
T
– T = P
θ
(pk) JC(t)
J(pk)
C
0.03
0.02
SINGLE PULSE
0.02 0.03 0.05
DUTY CYCLE, D = t /t
1 2
0.01
0.01
0.1
0.2 0.3
0.5
1
2
3
5
10
20
30
50
100
200 300 500
1000
t, TIME OR PULSE WIDTH (ms)
Figure 3. Thermal Response
ACTIVE–REGION SAFE–OPERATING AREA
T
T
C
A
10
2.5 25
7
5
100 µs
3
2
500
µs
2
20
1
0.7
0.5
5 ms
dc
1 ms
1.5 15
0.3
0.2
T
C
T
BONDING WIRE LIMITED
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
A
1
0.5
0
10
5
SURFACE
MOUNT
0.1
T
= 150°C
J
CURVES APPLY BELOW RATED V
CEO
0
2
3
5
7
10
20
30
50 70 100
200
25
50
75
100
125
150
T, TEMPERATURE (
°C)
V
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
CE
Figure 4. Maximum Rated Forward Biased
Safe Operating Area
Figure 5. Power Derating
200
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate I – V
limits of
T
= 25°C
C
CE
C
100
70
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
50
The data of Figures 5 and 6 is based on T
= 150 C; T
C
J(pk)
is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided T
C
ob
J(pk)
may be calculated from the data in Figure 4.
30
20
C
ib
< 150 C. T
J(pk)
At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.
PNP
NPN
10
0.04 0.06 0.1
0.2
0.4 0.6
1
2
4
6
10
20
40
V
, REVERSE VOLTAGE (VOLTS)
R
Figure 6. Capacitance
3
Motorola Bipolar Power Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
NPN MJD112
PNP MJD117
6 k
6 k
T
= 125
°
C
25
C
V
= 3 V
V
= 3 V
J
T = 125°C
C
CE
CE
4 k
3 k
4 k
3 k
25°C
2 k
2 k
°C
1 k
1 k
800
800
–55°
–55°C
600
600
400
300
400
300
0.04 0.06
0.1
0.2
0.4 0.6
1
2
4
0.04 0.06
0.1
0.2
0.4 0.6
1
2
4
100
4
I
, COLLECTOR CURRENT (AMP)
I
, COLLECTOR CURRENT (AMP)
C
C
Figure 7. DC Current Gain
3.4
3
3.4
T
= 125°C
T
= 125°C
J
J
3
I
=
C
0.5 A
I
=
1 A
2 A
4 A
C
2.6
2.6
0.5 A
1 A
2 A
4 A
2.2
1.8
1.4
2.2
1.8
1.4
1
1
0.6
0.1
0.6
0.1
0.2
0.5
1
2
5
10
20
50
100
0.2
0.5
1
2
5
10
I , BASE CURRENT (mA)
B
20
50
I
, BASE CURRENT (mA)
B
Figure 8. Collector Saturation Region
2.2
1.8
1.4
1
2.2
T
= 25°C
T = 25°C
J
J
1.8
1.4
1
V
@ I /I = 250
C B
V
@ I /I = 250
BE(sat)
BE(sat) C B
V
@ V = 3 V
CE
V
@ V = 3 V
CE
BE
BE
V
@ I /I = 250
C B
CE(sat)
V
@ I /I = 250
C B
CE(sat)
0.6
0.6
0.2
0.2
0.04 0.06
0.1
0.2
0.4 0.6
1
2
4
0.04 0.06
0.1
0.2
I , COLLECTOR CURRENT (AMP)
C
0.4 0.6
1
2
I
, COLLECTOR CURRENT (AMP)
C
Figure 9. “On Voltages
4
Motorola Bipolar Power Transistor Device Data
NPN MJD112
PNP MJD117
+0.8
0
+0.8
0
*APPLIED FOR I /I < h /3
C B FE
*APPLIES FOR I /I < h /3
C B FE
25°C TO 150°C
–0.8
–1.6
–2.4
–3.2
–0.8
–1.6
–2.4
–3.2
25°C TO 150°C
*θ
FOR V
CE(sat)
VC
–55
°C TO 25°C
*θ
FOR V
CE(sat)
VC
–55°C TO 25°C
25°
C TO 150°C
25°
C TO 150°C
–55°C TO 25°C
θ
FOR V
BE
VC
θ
FOR V
0.1
VB
BE
–4
–55
°
C TO 25
°
C
–4
–4.8
–4.8
0.04 0.06
0.1
0.2
0.4 0.6
1
2
4
0.04 0.06
0.2
I , COLLECTOR CURRENT (AMP)
C
0.4 0.6
1
2
4
I
, COLLECTOR CURRENT (AMP)
C
Figure 10. Temperature Coefficients
5
5
10
10
10
10
10
REVERSE
FORWARD
REVERSE
FORWARD
4
3
2
4
3
2
10
10
10
V
= 30 V
V
= 30 V
CE
CE
T
= 150°C
J
T
= 150°C
J
1
0
1
0
10
10
100
°
C
C
10
10
100°C
25°
25
°C
–1
10
–1
10
–0.6 –0.4 –0.2
0
+0.2 +0.4 +0.6 +0.8
+1 +1.2 +1.4
+0.6 +0.4 +0.2
0
–0.2 –0.4 –0.6 –0.8
–1
–1.2 –1.4
V
, BASE–EMITTER VOLTAGE (VOLTS)
V , BASE–EMITTER VOLTAGE (VOLTS)
BE
BE
Figure 11. Collector Cut–Off Region
COLLECTOR
COLLECTOR
PNP
NPN
BASE
BASE
≈
8 k
≈
120
≈
8 k
≈ 120
EMITTER
EMITTER
Figure 12. Darlington Schematic
5
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEATING
PLANE
–T–
2. CONTROLLING DIMENSION: INCH.
C
B
R
INCHES
MILLIMETERS
E
V
DIM
A
B
C
D
E
MIN
MAX
0.250
0.265
0.094
0.035
0.040
0.047
MIN
5.97
6.35
2.19
0.69
0.84
0.94
MAX
6.35
6.73
2.38
0.88
1.01
1.19
0.235
0.250
0.086
0.027
0.033
0.037
4
2
Z
A
K
S
F
1
3
G
H
J
K
L
0.180 BSC
4.58 BSC
U
0.034
0.018
0.102
0.040
0.023
0.114
0.87
0.46
2.60
1.01
0.58
2.89
0.090 BSC
2.29 BSC
F
J
R
S
U
V
0.175
0.020
0.020
0.030
0.138
0.215
0.050
–––
0.050
–––
4.45
0.51
0.51
0.77
3.51
5.46
1.27
–––
1.27
–––
L
H
D 2 PL
Z
M
G
0.13 (0.005)
T
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
CASE 369A–13
ISSUE W
C
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
V
E
R
INCHES
MILLIMETERS
4
DIM
A
B
C
D
E
MIN
MAX
0.250
0.265
0.094
0.035
0.040
0.047
MIN
5.97
6.35
2.19
0.69
0.84
0.94
MAX
6.35
6.73
2.38
0.88
1.01
1.19
0.235
0.250
0.086
0.027
0.033
0.037
A
K
1
2
3
S
F
–T–
SEATING
PLANE
0.090 BSC
2.29 BSC
G
H
J
K
R
S
0.034
0.018
0.350
0.175
0.050
0.030
0.040
0.023
0.380
0.215
0.090
0.050
0.87
0.46
8.89
4.45
1.27
0.77
1.01
0.58
9.65
5.46
2.28
1.27
J
F
V
H
D 3 PL
STYLE 1:
PIN 1. BASE
G
M
0.13 (0.005)
T
2. COLLECTOR
3. EMITTER
4. COLLECTOR
CASE 369–07
ISSUE K
How to reach us:
USA / EUROPE: Motorola Literature Distribution;
JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki,
P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447
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HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298
MJD112/D
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