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MJD112 [MOTOROLA]

SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS; 硅功率晶体管2安培100伏20瓦

MJD112


型号：	MJD112
厂家：	MOTOROLA
描述：	SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS 硅功率晶体管2安培100伏20瓦晶体晶体管功率双极晶体管
文件：	总6页 (文件大小：309K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

相关型号：

MJD112-001

Complementary Darlington Power Transistors

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ONSEMI

MJD112-001G

2A, 100V, NPN, Si, POWER TRANSISTOR, LEAD FREE, CASE 369D-01, DPAK-3

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ONSEMI

MJD112-1

2A, 100V, NPN, Si, POWER TRANSISTOR

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MOTOROLA

MJD112-1

2A, 100V, NPN, Si, POWER TRANSISTOR, CASE 369-07, 3 PIN

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ONSEMI

MJD112-1G

Complementary Darlington Power Transistors

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ONSEMI

MJD112-TP

Small Signal Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, DPAK-3

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MCC

MJD1121

SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS

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MOTOROLA

MJD112G

Complementary Darlington Power Transistors

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ONSEMI

MJD112L

EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)

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KEC

MJD112NPN

COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS

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CDIL

MJD112RL

Complementary Darlington Power Transistors

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ONSEMI

MJD112RLG

Complementary Darlington Power Transistors

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ONSEMI

MJD112T4

Complementary Darlington Power Transistors

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ONSEMI

MJD112T4

SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS

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MOTOROLA

MJD112T4

Complementary power Darlington transistors

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STMICROELECTR

MJD112T4G

Complementary Darlington Power Transistors

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ONSEMI

MJD112TF

2.0 A, 100 V NPN Darlington Bipolar Power Transistor, 2000-REEL

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ONSEMI

MJD112_03

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

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STMICROELECTR

MJD112_06

Complementary Darlington Power Transistors

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ONSEMI

MJD112_06

NPN Silicon Darlington Transistor

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FAIRCHILD

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