MJD200 [MOTOROLA]
SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS; 硅功率晶体管5安培25伏特12.5沃茨
| 型号： | MJD200 |
| 厂家： | 
MOTOROLA |
| 描述： | SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS |
| 文件： | 总6页 (文件大小：239K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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by MJD200/D
SEMICONDUCTOR TECHNICAL DATA
NPN/PNP Silicon DPAK For Surface Mount
Applications
SILICON
POWER TRANSISTORS
5 AMPERES
. . . designed for low voltage, low–power, high–gain audio amplifier applications.
•
Collector–Emitter Sustaining Voltage —
= 25 Vdc (Min) @ I = 10 mAdc
V
CEO(sus)
High DC Current Gain — h
C
25 VOLTS
12.5 WATTS
•
= 70 (Min) @ I = 500 mAdc
FE
C
= 45 (Min) @ I = 2 Adc
C
= 10 (Min) @ I = 5 Adc
C
•
•
•
•
Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
Straight Lead Version in Plastic Sleeves (“–1” Suffix)
Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)
Low Collector–Emitter Saturation Voltage —
V
= 0.3 Vdc (Max) @ I = 500 mAdc
CE(sat)
C
= 0.75 Vdc (Max) @ I = 2.0 Adc
C
•
•
High Current–Gain — Bandwidth Product — f = 65 MHz (Min) @ I = 100 mAdc
Annular Construction for Low Leakage — I
T
CBO
C
CASE 369A–13
= 100 nAdc @ Rated V
CB
MAXIMUM RATINGS
Rating
Symbol
Value
40
Unit
Vdc
Vdc
Vdc
Adc
Collector–Base Voltage
Collector–Emitter Voltage
Emitter–Base Voltage
V
CB
V
CEO
25
V
EB
8
CASE 369–07
Collector Current — Continuous
Peak
I
C
5
10
Base Current
I
B
1
Adc
Total Device Dissipation @ T = 25 C
C
P
12.5
0.1
Watts
W/ C
D
MINIMUM PAD SIZES
RECOMMENDED FOR
SURFACE MOUNTED
APPLICATIONS
Derate above 25 C
Total Device Dissipation @ T = 25 C*
A
Derate above 25 C
P
D
1.4
0.011
Watts
W/ C
Operating and Storage Junction
Temperature Range
T , T
–65 to +150
C
J
stg
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient*
R
θJC
R
θJA
10
89.3
C/W
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)
C
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
Symbol
Min
Max
Unit
V
25
—
Vdc
CEO(sus)
(I = 10 mAdc, I = 0)
C
B
Collector Cutoff Current
I
nAdc
CBO
(V
CB
(V
CB
= 40 Vdc, I = 0)
—
—
100
100
inches
mm
E
= 40 Vdc, I = 0, T = 125 C)
E
J
Emitter Cutoff Current (V
BE
= 8 Vdc, I = 0)
I
—
100
nAdc
C
EBO
* When surface mounted on minimum pad sizes recommended.
(continued)
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle
2%.
REV 1
Motorola, Inc. 1995
ELECTRICAL CHARACTERISTICS — continued (T = 25 C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain (1)
h
FE
—
(I = 500 mAdc, V
CE
= 1 Vdc)
70
45
10
—
180
—
C
C
(I = 2 Adc, V
= 1 Vdc)
= 2 Vdc)
CE
CE
(I = 5 Adc, V
C
Collector–Emitter Saturation Voltage (1)
(I = 500 mAdc, I = 50 mAdc)
V
V
Vdc
CE(sat)
—
—
—
0.3
0.75
1.8
C
B
(I = 2 Adc, I = 200 mAdc)
C
C
B
B
(I = 5 Adc, I = 1 Adc)
Base–Emitter Saturation Voltage (1) (I = 5 Adc, I = 1 Adc)
—
—
2.5
1.6
Vdc
Vdc
C
B
BE(sat)
Base–Emitter On Voltage (1) (I = 2 Adc, V
C
= 1 Vdc)
V
CE
BE(on)
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product (2)
f
65
—
MHz
pF
T
(I = 100 mAdc, V
C
= 10 Vdc, f = 10 MHz)
test
CE
Output Capacitance
MJD200
MJD210
C
—
—
80
120
ob
(V
CB
= 10 Vdc, I = 0, f = 0.1 MHz)
E
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle
2%.
(2) f = h • f
.
T
fe test
T
T
C
A
2.5 25
V
CC
+30 V
25
µs
2
20
R
+11 V
0
C
SCOPE
R
1.5 15
B
–9 V
D
T (SURFACE MOUNT)
A
51
1
1
0.5
0
10
5
t , t
≤
10 ns
r
f
DUTY CYCLE = 1%
T
C
–4 V
and R VARIED TO OBTAIN DESIRED CURRENT LEVELS
R
B
C
D
MUST BE FAST RECOVERY TYPE, e.g.:
1
0
FOR PNP TEST CIRCUIT,
REVERSE ALL POLARITIES
1N5825 USED ABOVE I
MSD6100 USED BELOW I
≈
100 mA
100 mA
B
25
50
75
100
125
150
≈
B
T, TEMPERATURE (
°C)
Figure 1. Power Derating
Figure 2. Switching Time Test Circuit
1K
10K
5K
t
V
I
= 30 V
/I = 10
= I
= 25°C
500
d
CC
C B
t
300
200
3K
2K
s
I
T
B1 B2
J
100
1K
50
500
30
20
300
200
t
V
= 30 V
/I = 10
r
CC
I
C B
= 25°C
10
5
100
T
J
50
3
2
30
20
MJD200
MJD210
MJD200
MJD210
t
f
1
0.01
10
0.01
0.03 0.05 0.1
0.2 0.3 0.5
1
2
3
5
10
0.03 0.05 0.1
0.2 0.3 0.5
I , COLLECTOR CURRENT (AMPS)
C
1
2
3
5
10
0.02
0.02
I
, COLLECTOR CURRENT (AMPS)
C
Figure 3. Turn–On Time
Figure 4. Turn–Off Time
Motorola Bipolar Power Transistor Device Data
2
NPN
PNP
MJD200
MJD210
400
200
400
200
T
= 150°C
J
25°C
T
= 150°C
J
25°C
–55°C
100
80
100
80
–55°C
60
40
60
40
V
V
= 1 V
= 2 V
V
V
= 1 V
= 2 V
CE
CE
CE
CE
20
20
0.05 0.07 0.1
0.2
0.3
0.5 0.7
1
2
3
5
0.05 0.07 0.1
0.2 0.3
0.5 0.7
1
2
3
5
I
, COLLECTOR CURRENT (AMP)
I
, COLLECTOR CURRENT (AMP)
C
C
Figure 5. DC Current Gain
2
2
1.6
1.2
T
= 25°C
T
= 25°C
J
J
1.6
1.2
0.8
0.4
0
V
@ I /I = 10
C B
V
@ I /I = 10
BE(sat)
BE(sat) C B
0.8
V
@ V = 1 V
CE
BE
V
@ V = 1 V
CE
BE
0.4
0
V
@ I /I = 10
C B
CE(sat)
V
@ I /I = 10
C B
CE(sat)
0.05 0.07 0.1
0.2
0.3
0.5 0.7
1
2
3
5
0.05 0.07 0.1
0.2 0.3
0.5 0.7
1
2
3
5
I
, COLLECTOR CURRENT (AMP)
I , COLLECTOR CURRENT (AMP)
C
C
Figure 6. “On” Voltage
+2.5
+2
+2.5
+2
*APPLIES FOR I /I
C B
≤ h
FE/3
*APPLIES FOR I /I
C B
≤
h
FE/3
+1.5
+1
+1.5
+1
25°C to 150°C
+0.5
0
+0.5
25°C to 150°C
θ
for V
CE(sat)
*θ
for V
CE(sat)
VC
VC
0
–55°C to 25°C
–55
°C to 25°C
–0.5
–1
–0.5
25°C to 150°C
25°C to 150
°C
–1
θ
for V
BE
–55°C to 25°C
VB
–1.5
–2
–1.5
θ
for V
VB
BE
–55°C to 25°C
–2
–2.5
–2.5
0.05 0.07 0.1
0.2
0.3
0.5 0.7
1
2
3
5
0.05 0.07 0.1
0.2
0.3
0.5 0.7
1
2
3
5
I
, COLLECTOR CURRENT (AMP)
I
, COLLECTOR CURRENT (AMP)
C
C
Figure 7. Temperature Coefficients
3
Motorola Bipolar Power Transistor Device Data
1
0.7
0.5
D = 0.5
0.2
0.1
0.3
0.2
P
(pk)
R
R
(t) = r(t) θ
= 10
θ
θ
JC
JC
JC
°C/W MAX
0.05
0.1
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
0.07
0.05
t
1
0.02
t
1
2
0.01
T
– T = P
θ
(t)
J(pk)
C
(pk) JC
0.03
0.02
DUTY CYCLE, D = t /t
1 2
0 (SINGLE PULSE)
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
10
20
50
100
200
t, TIME (ms)
Figure 8. Thermal Response
10
5
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
5 ms
down. Safe operating area curves indicate I – V
limits of
C
CE
3
2
T
= 150°C
100 µs
J
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
1 ms
dc
1
500 µs
The data of Figure 9 is based on T
= 150 C; T is
C
J(pk)
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
BONDING WIRE LIMITED
THERMALLY LIMITED @ T = 25°C
C
(SINGLE PULSE)
J(pk)
may be calculated from the data in Fig-
0.1
150 C. T
J(pk)
ure 8. At high case temperatures, thermal limitations will re-
duce the power that can be handled to values less than the
limitations imposed by second breakdown.
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW
RATED V
CEO
0.01
Case 369–05 may be ordered by adding a “–1” suffix to the
device title (i.e. MJD200–1)
0.3
1
2
3
5
7
10
20
30
V
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
CE
Figure 9. Active Region Safe Operating Area
200
T
= 25°C
J
C
ib
100
70
50
C
ob
MJD200 (NPN)
MJD210 (PNP)
30
20
0.4 0.6
1
2
4
6
10
20
40
V
, REVERSE VOLTAGE (VOLTS)
R
Figure 10. Capacitance
4
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEATING
PLANE
–T–
2. CONTROLLING DIMENSION: INCH.
C
B
R
INCHES
MILLIMETERS
E
V
DIM
A
B
C
D
E
MIN
MAX
0.250
0.265
0.094
0.035
0.040
0.047
MIN
5.97
6.35
2.19
0.69
0.84
0.94
MAX
6.35
6.73
2.38
0.88
1.01
1.19
0.235
0.250
0.086
0.027
0.033
0.037
4
2
Z
A
K
S
F
1
3
G
H
J
K
L
0.180 BSC
4.58 BSC
U
0.034
0.018
0.102
0.040
0.023
0.114
0.87
0.46
2.60
1.01
0.58
2.89
0.090 BSC
2.29 BSC
F
J
R
S
U
V
0.175
0.020
0.020
0.030
0.138
0.215
0.050
–––
0.050
–––
4.45
0.51
0.51
0.77
3.51
5.46
1.27
–––
1.27
–––
L
H
D 2 PL
Z
M
G
0.13 (0.005)
T
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
CASE 369A–13
ISSUE W
C
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
V
E
R
INCHES
MILLIMETERS
4
DIM
A
B
C
D
E
MIN
MAX
0.250
0.265
0.094
0.035
0.040
0.047
MIN
5.97
6.35
2.19
0.69
0.84
0.94
MAX
6.35
6.73
2.38
0.88
1.01
1.19
0.235
0.250
0.086
0.027
0.033
0.037
A
K
1
2
3
S
F
–T–
SEATING
PLANE
0.090 BSC
2.29 BSC
G
H
J
K
R
S
0.034
0.018
0.350
0.175
0.050
0.030
0.040
0.023
0.380
0.215
0.090
0.050
0.87
0.46
8.89
4.45
1.27
0.77
1.01
0.58
9.65
5.46
2.28
1.27
J
F
V
H
D 3 PL
STYLE 1:
PIN 1. BASE
G
M
0.13 (0.005)
T
2. COLLECTOR
3. EMITTER
4. COLLECTOR
CASE 369–07
ISSUE K
5
Motorola Bipolar Power Transistor Device Data
Motorolareserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representationorguaranteeregarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
andspecifically disclaims any and all liability, includingwithoutlimitationconsequentialorincidentaldamages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
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against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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