MJE15031 [MOTOROLA]

8 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 120-150 VOLTS 50 WATTS; 8安培功率晶体管互补硅120-150 VOLTS 50瓦


型号：	MJE15031
厂家：	MOTOROLA
描述：	8 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 120-150 VOLTS 50 WATTS 8安培功率晶体管互补硅120-150 VOLTS 50瓦晶体晶体管功率双极晶体管放大器局域网
文件：	总6页 (文件大小：220K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Order this document

by MJE15028/D

SEMICONDUCTOR TECHNICAL DATA

. . . designed for use as high–frequency drivers in audio amplifiers.

•

DC Current Gain Specified to 4.0 Amperes

= 40 (Min) @ I = 3.0 Adc

= 20 (Min) @ I = 4.0 Adc

*Motorola Preferred Device

•

Collector–Emitter Sustaining Voltage —

= 120 Vdc (Min) — MJE15028, MJE15029

= 150 Vdc (Min) — MJE15030, MJE15031

CEO(sus)

8 AMPERE

POWER TRANSISTORS

COMPLEMENTARY

SILICON

•

High Current Gain — Bandwidth Product

= 30 MHz (Min) @ I = 500 mAdc

TO–220AB Compact Package

120–150 VOLTS

50 WATTS

MAXIMUM RATINGS

MJE15028 MJE15030

MJE15029 MJE15031

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Symbol

Unit

Vdc

Adc

CEO

120

150

5.0

Collector Current — Continuous

— Peak

8.0

Base Current

2.0

Adc

Total Power Dissipation @ T = 25 C

Derate above 25 C

0.40

Watts

W/ C

Total Power Dissipation @ T = 25 C

Derate above 25 C

2.0

0.016

Watts

W/ C

CASE 221A–06

TO–220AB

Operating and Storage Junction

Temperature Range

T , T

–65 to +150

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

2.5

Unit

C/W

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

θJC

θJA

62.5

3.0 60

2.0 40

1.0 20

100

120

140

160

T, TEMPERATURE (

Figure 1. Power Derating

Preferred devices are Motorola recommended choices for future use and best overall value.

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁵r Power Transistor Device Data

ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (1)

Vdc

CEO(sus)

(I = 10 mAdc, I = 0)

MJE15028, MJE15029

MJE15030, MJE15031

120

150

—

Collector Cutoff Current

mAdc

µAdc

CEO

CBO

= 120 Vdc, I = 0)

MJE15028, MJE15029

MJE15030, MJE15031

—

0.1

= 150 Vdc, I = 0)

Collector Cutoff Current

= 120 Vdc, I = 0)

MJE15028, MJE15029

MJE15030, MJE15031

—

= 150 Vdc, I = 0)

Emitter Cutoff Current

(V = 5.0 Vdc, I = 0)

—

EBO

ON CHARACTERISTICS (1)

DC Current Gain

—

(I = 0.1 Adc, V

= 2.0 Vdc)

—

(I = 2.0 Adc, V

= 2.0 Vdc)

(I = 3.0 Adc, V

(I = 4.0 Adc, V

DC Current Gain Linearity

(V From 2.0 V to 20 V, I From 0.1 A to 3 A)

Typ

(NPN TO PNP)

Collector–Emitter Saturation Voltage

—

0.5

1.0

Vdc

CE(sat)

(I = 1.0 Adc, I = 0.1 Adc)

Base–Emitter On Voltage

(I = 1.0 Adc, V = 2.0 Vdc)

BE(on)

DYNAMIC CHARACTERISTICS

Current Gain — Bandwidth Product (2)

—

MHz

(I = 500 mAdc, V

= 10 Vdc, f

= 10 MHz)

test

(1) Pulse Test: Pulse Width

300 µs, Duty Cycle

2.0%.

(2) f = h • f

fe test

1.0

0.7

0.5

D = 0.5

0.3

0.2

0.1

(pk)

= r(t) R

JC(t)

°C/W MAX

0.05

0.02

0.07

0.05

= 1.56

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

0.03

0.02

READ TIME AT t

– T = P

0.01

J(pk)

(pk) θJC(t)

DUTY CYCLE, D = t /t

1 2

SINGLE PULSE

0.05

0.01

0.1

0.2

0.5

1.0

2.0

5.0

100

200

500

1.0 k

0.02

t, TIME (ms)

Figure 2. Thermal Response

Motorola Bipolar Power Transistor Device Data

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

100 µs

down. Safe operating area curves indicate I – V

limits of

5 ms

the transistor that must be observed for reliable operation,

i.e., the transistor must not be subjected to greater dissipa-

tion then the curves indicate.

1.0

The data of Figures 3 and 4 is based on T

= 150 C;

BONDING WIRE LIMITED

THERMALLY LIMITED

SECOND BREAKDOWN

J(pk)

is variable depending on conditions. Second breakdown

pulse limits are valid for duty cycles to 10% provided T

J(pk)

may be calculated from the data in Figure 2.

LIMITED @ T = 25°C

< 150 C. T

0.1

J(pk)

MJE15028

MJE15029

MJE15030

MJE15031

At high case temperatures, thermal limitations will reduce the

power that can be handled to values less than the limitations

imposed by second breakdown.

0.02

2.0

5.0

120 150

, COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 3. Forward Bias Safe Operating Area

1000

8.0

(NPN)

(PNP)

500

200

5.0

/I = 10

C B

100

= 25°C

(PNP)

(NPN)

3.0

2.0

= 9 V

BE(off)

5 V

3 V

1.0

1.5 V

0 V

130 140 150

100

110

120

1.5

3.0

5.0 7.0 10

100 150

, REVERSE VOLTAGE (VOLTS)

, COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 5. Capacitances

Figure 4. Reverse–Bias Switching

Safe Operating Area

100

(PNP)

(NPN)

= 10 V

= 0.5 A

PNP

NPN

= 25°C

5.0

0.5

1.0

2.0

3.0

5.0

7.0

0.1

0.2

0.5

1.0

2.0

5.0

0.7

, COLLECTOR CURRENT (AMP)

f, FREQUENCY (MHz)

Figure 7. Current Gain–Bandwidth Product

Figure 6. Small–Signal Current Gain

Motorola Bipolar Power Transistor Device Data

NPN — MJE15028 MJE15030

PNP — MJE15029 MJE15031

V = 2 V

= 2.0 V

500

= 150°C

200

150

200

= 25°C

100

= –55°C

0.1

0.2

0.5

1.0

2.0

5.0

0.1

0.2

0.5

1.0

2.0

5.0

, COLLECTOR CURRENT (AMP)

Figure 8. DC Current Gain

NPN

PNP

= 25°C

1.8

1.4

= 25°C

1.6

1.2

1.0

0.8

@ I /I = 10

C B

BE(sat)

@ I /I = 10

BE(sat)

C B

0.6

0.2

@ V = 2.0 V

BE(on)

@ V = 2.0 V

BE(on)

0.4

= I /I = 20

CE(sat) C B

= I /I = 20

CE(sat) C B

/I = 10

C B

0.1

0.2

0.5

1.0

2.0

5.0

0.2

0.5

1.0

2.0

5.0

, COLLECTOR CURRENT (AMP)

I , COLLECTOR CURRENT (AMP)

Figure 9. “On” Voltage

1.0

0.5

= 80 V

/I = 10

= 80 V

/I = 10, I = I

C B

= 25

C B B1 B2

(NPN) T = 25°C

s J

5.0

3.0

°C

(NPN, PNP)

0.2

t (PNP)

2.0

(PNP)

0.1

1.0

0.5

t (PNP)

0.05

0.03

0.02

t (NPN)

0.2

0.1

t (NPN)

0.01

0.1

0.2

0.5

1.0

2.0

5.0

0.1

0.2

0.3 0.5

I , COLLECTOR CURRENT (AMP)

2.0

5.0

, COLLECTOR CURRENT (AMP)

Figure 10. Turn–On Times

Figure 11. Turn–Off Times

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

NOTES:

SEATING

PLANE

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

–T–

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

INCHES

MIN

MILLIMETERS

DIM

MAX

0.620

0.405

0.190

0.035

0.147

0.105

0.155

0.025

0.562

0.060

0.210

0.120

0.110

0.055

0.255

0.050

–––

MIN

14.48

9.66

4.07

0.64

3.61

2.42

2.80

0.46

12.70

1.15

4.83

2.54

2.04

1.15

5.97

0.00

1.15

–––

MAX

15.75

10.28

4.82

0.88

3.73

2.66

3.93

0.64

14.27

1.52

5.33

3.04

2.79

1.39

6.47

1.27

–––

0.570

0.380

0.160

0.025

0.142

0.095

0.110

0.018

0.500

0.045

0.190

0.100

0.080

0.045

0.235

0.000

0.045

–––

0.080

2.04

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

CASE 221A–06

TO–220AB

ISSUE Y

Motorola Bipolar Power Transistor Device Data

Motorolareserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representationorguaranteeregarding

the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,

andspecifically disclaims any and all liability, includingwithoutlimitationconsequentialorincidentaldamages. “Typical” parameters can and do vary in different

applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does

not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in

systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of

the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such

unintendedor unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless

against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.

Motorola and

are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:

USA / EUROPE: Motorola Literature Distribution;

JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki,

P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447

6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315

MFAX: RMFAX0@email.sps.mot.com – TOUCHTONE (602) 244–6609

INTERNET: http://Design–NET.com

HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,

51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298

Motorola Bipolar Power Transistor Device Data

MJE15028/D

◊

相关型号：