MJE3055T [MOTOROLA]
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS 75 WATTS; 10安培互补硅功率晶体管60伏75瓦
| 型号： | MJE3055T |
| 厂家： | 
MOTOROLA |
| 描述： | 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS 75 WATTS |
| 文件： | 总4页 (文件大小：132K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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by MJE2955T/D
SEMICONDUCTOR TECHNICAL DATA
. . . designed for use in general–purpose amplifier and switching applications.
*Motorola Preferred Device
•
•
DC Current Gain Specified to 10 Amperes
High Current Gain — Bandwidth Product —
10 AMPERE
COMPLEMENTARY
SILICON
f
T
= 2.0 MHz (Min) @ I = 500 mAdc
C
POWER TRANSISTORS
60 VOLTS
MAXIMUM RATINGS
Rating
Symbol
Value
60
Unit
Vdc
75 WATTS
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current
V
CEO
V
CB
70
Vdc
V
EB
5.0
10
Vdc
I
C
Adc
Base Current
I
6.0
75
Adc
B
Total Power Dissipation @ T = 25 C
C
Derate above 25 C
P †
D
Watts
0.6
W/ C
C
MJE3055T, MJE2955T
Operating and Storage Junction
Temperature Range
T , T
–55 to +150
J
stg
CASE 221A–06
TO–220AB
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
θ
1.67
C/W
JC
†Safe Area Curves are indicated by Figure 1. Both limits are applicable and must be observed.
10
7.0
100 µs
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
1.0 ms
5.0 ms
5.0
dc
down. Safe operating area curves indicate I – V
limits of
C
CE
3.0
2.0
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
1.0
0.7
The data of Figure 1 is based on T
= 150 C. T is vari-
C
J(pk)
able depending on conditions. Second breakdown pulse lim-
its are valid for duty cycles to 10% provided T 150 C.
T
= 150°C
J
0.5
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMALLY LIMITED
J(pk)
0.3
0.2
At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown. (See AN415A)
T
= 25°C (D = 0.1)
C
0.1
5.0
7.0
10
20
30
50 60
V
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
CE
Figure 1. Active–Region Safe Operating Area
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola, Inc. 1995
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1) (I = 200 mAdc, I = 0)
V
60
—
—
Vdc
µAdc
mAdc
C
B
CEO(sus)
Collector Cutoff Current (V
Collector Cutoff Current
= 30 Vdc, I = 0)
I
CEO
700
CE
B
I
CEX
(V
CE
(V
CE
= 70 Vdc, V
= 70 Vdc, V
= 1.5 Vdc)
= 1.5 Vdc, T = 150 C)
—
—
1.0
5.0
EB(off)
EB(off)
C
Collector Cutoff Current
I
mAdc
CBO
(V
CB
(V
CB
= 70 Vdc, I = 0)
E
—
—
1.0
10
= 70 Vdc, I = 0, T = 150 C)
E
C
Emitter Cutoff Current (V
ON CHARACTERISTICS
DC Current Gain (1)
= 5.0 Vdc, I = 0)
I
EBO
—
5.0
mAdc
—
BE
C
h
FE
(I = 4.0 Adc, V
= 4 0 Vdc)
= 4.0 Vdc)
20
5.0
100
—
C
C
CE
CE
(I = 10 Adc, V
Collector–Emitter Saturation Voltage (1)
(I = 4.0 Adc, I = 0.4 Adc)
V
Vdc
CE(sat)
—
—
1.1
8.0
C
B
(I = 10 Adc, I = 3.3 Adc)
C
B
Base–Emitter On Voltage (1) (I = 4.0 Adc, V
C
= 4.0 Vdc)
V
—
1.8
Vdc
CE
BE(on)
DYNAMIC CHARACTERISTICS
Current–Gain–Bandwidth Product (I = 500 mAdc, V
CE
= 10 Vdc, f = 500 kHz)
f
T
2.0
—
MHz
C
(1) Pulse Test: Pulse Width
300 µs, Duty Cycle
20%.
500
300
90
80
70
60
50
40
30
20
10
0
V
= 2.0 V
CE
200
100
50
T
= 150
°
C
C
J
25°
MJE3055T
MJE2955T
–55°C
30
20
10
5.0
0.01 0.02
0.05 0.1
0.2
0.5
1.0
2.0
5.0
10
0
25
50
75
100
125
C)
150
175
I
, COLLECTOR CURRENT (AMP)
T
, CASE TEMPERATURE (°
C
C
Figure 2. DC Current Gain
MJE2955T
Figure 3. Power Derating
MJE3055T
2.0
1.6
1.4
1.2
1.0
0.8
0.6
T
= 25
°
C
T
= 25°C
J
J
1.2
0.8
V
@ I /I = 10
C B
BE(sat)
V
@ I /I = 10
C B
V
@ V = 2.0 V
CE
BE(sat)
BE
0.4
0.2
0
V
@ V = 3.0 V
CE
BE
0.4
0
V
@ I /I = 10
C B
V
@ I /I = 10
C B
CE(sat)
CE(sat)
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
0.1
0.2 0.3
0.5
I , COLLECTOR CURRENT (AMP)
C
1.0
2.0 3.0
5.0
10
I
, COLLECTOR CURRENT (AMP)
C
Figure 4. “On” Voltages
2
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
NOTES:
SEATING
PLANE
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
–T–
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
C
S
B
F
T
4
INCHES
MIN
MILLIMETERS
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
MAX
0.620
0.405
0.190
0.035
0.147
0.105
0.155
0.025
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
–––
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.46
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
–––
MAX
15.75
10.28
4.82
0.88
3.73
2.66
3.93
0.64
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
–––
A
K
Q
Z
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.018
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
–––
1
2
3
U
H
L
R
J
V
G
T
U
V
D
N
Z
0.080
2.04
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
CASE 221A–06
TO–220AB
ISSUE Y
3
Motorola Bipolar Power Transistor Device Data
Motorolareserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representationorguaranteeregarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
andspecifically disclaims any and all liability, includingwithoutlimitationconsequentialorincidentaldamages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
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associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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MJE2955T/D
◊
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