MJH11020 [MOTOROLA]
15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150, 200, 250 VOLTS 150 WATTS; 15安培达林顿互补硅功率晶体管150 ， 200 ， 250伏150瓦
| 型号： | MJH11020 |
| 厂家： | 
MOTOROLA |
| 描述： | 15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150, 200, 250 VOLTS 150 WATTS |
| 文件： | 总6页 (文件大小：214K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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by MJH11017/D
SEMICONDUCTOR TECHNICAL DATA
. . . designed for use as general purpose amplifiers, low frequency switching and
motor control applications.
•
•
High DC Current Gain @ 10 Adc — h
Collector–Emitter Sustaining Voltage
= 400 Min (All Types)
FE
V
V
V
= 150 Vdc (Min) — MJH11018, 17
= 200 Vdc (Min) — MJH11020, 19
= 250 Vdc (Min) — MJH11022, 21
CEO(sus)
CEO(sus)
CEO(sus)
•
•
Low Collector–Emitter Saturation Voltage
V
V
= 1.2 V (Typ) @ I = 5.0 A
CE(sat)
CE(sat)
C
= 1.8 V (Typ) @ I = 10 A
C
Monolithic Construction
MAXIMUM RATINGS
*Motorola Preferred Device
MJH
11018
11017
11020
11019
11022
11021
15 AMPERE
DARLINGTON
COMPLEMENTARY SILICON
POWER TRANSISTORS
150, 200, 250 VOLTS
150 WATTS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Symbol
Unit
Vdc
Vdc
Vdc
Adc
V
CEO
150
150
200
200
5.0
250
250
V
CB
V
EB
Collector Current — Continuous
— Peak (1)
I
C
15
30
Base Current
I
B
0.5
Adc
Total Device Dissipation @ T = 25 C
C
Derate Above 25 C
P
D
150
1.2
Watts
W/ C
Operating and Storage Junction
Temperature Range
T , T
J stg
–65 to +150
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance. Junction to Case
R
0.83
C/W
θJC
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle
10%.
CASE 340D–01
160
140
120
100
80
60
40
20
0
0
20
40
60
80
100
120
C)
140
160
T
, CASE TEMPERATURE (
°
C
Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola, Inc. 1995
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
V
Vdc
CEO(sus)
(I = 0.1 Adc, I = 0)
MJH11017, MJH11018
MJH11019, MJH11020
MJH11021, MJH11022
150
200
250
—
—
—
C
B
Collector Cutoff Current
I
mAdc
mAdc
CEO
(V
CE
(V
CE
(V
CE
= 75 Vdc, I = 0)
MJH11017, MJH11018
MJH11019, MJH11020
MJH11021, MJH11022
—
—
—
1.0
1.0
1.0
B
= 100 Vdc, I = 0)
B
= 125 Vdc, I = 0)
B
Collector Cutoff Current
I
CEV
(V
CE
(V
CE
= Rated V , V
= Rated V , V
CB BE(off)
= 1.5 Vdc)
= 1.5 Vdc, T = 150 C)
—
—
0.5
5.0
CB BE(off)
J
Emitter Cutoff Current (V
BE
= 5.0 Vdc I = 0)
I
—
2.0
mAdc
—
C
EBO
ON CHARACTERISTICS (1)
DC Current Gain (I = 10 Adc, V
= 5.0 Vdc)
= 5.0 Vdc)
h
FE
400
100
15,000
—
C
CE
CE
DC Current Gain (I = 15 Adc, V
C
Collector–Emitter Saturation Voltage (I = 10 Adc, I = 100 mA)
V
CE(sat)
—
—
2.5
4.0
Vdc
C
B
Collector–Emitter Saturation Voltage (I = 15 Adc, I = 150 mA)
C
B
Base–Emitter On Voltage (I = 10 A, V
CE
= 5.0 Vdc)
V
—
—
2.8
3.8
Vdc
Vdc
C
BE(on)
V
BE(sat)
Base–Emitter Saturation Voltage (I = 15 Adc, I = 150 mA)
C
B
DYNAMIC CHARACTERISTICS
Current–Gain Bandwidth Product
f
3.0
—
—
pF
—
T
(I = 10 Adc, V
C CE
= 3.0 Vdc, f = 1.0 MHz)
Output Capacitance
(V = 10 Vdc, I = 0, f = 0.1 MHz)
MJH11018, MJH11020, MJH11022
MJH11017, MJH11019, MJH11021
C
—
—
400
600
ob
CB
E
Small–Signal Current Gain (I = 10 Adc, V
C
= 3.0 Vdc, f = 1.0 kHz)
h
75
—
CE
fe
SWITCHING CHARACTERISTICS
Typical
Characteristic
Symbol
NPN
150
1.2
PNP
75
Unit
ns
Delay Time
Rise Time
Storage Time
Fall Time
t
d
t
r
0.5
2.7
2.5
µs
(V
CC
= 100 V, I = 10 A, I = 100 mA
C B
BE(off)
V
= 5.0 V) (See Figure 2)
t
s
4.4
µs
t
f
2.5
µs
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle
2.0%.
V
100 V
CC
R
C
SCOPE
TUT
R
& R varied to obtain desired current levels
V2
APPROX
+12 V
0
R
B
1
C
B
D , must be fast recovery types, e.g.:
1N5825 used above I ≈ 100 mA
B
MSD6100 used below I ≈ 100 mA
51
D
1
B
V1
APPROX
–8.0 V
+4.0 V
25 µs
For t and t , D is disconnected
d
r
1
and V2 = 0
t , t ≤ 10 ns
r f
Duty Cycle = 1.0%
For NPN test circuit, reverse diode and voltage polarities.
Figure 2. Switching Times Test Circuit
2
Motorola Bipolar Power Transistor Device Data
1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
0.1
P
(pk)
R
R
(t) = r(t) R
θ
0.1
0.07
0.05
θ
θ
JC
JC
JC
°C/W MAX
0.05
0.02
= 0.83
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
t
1
0.03
0.02
0.01
READ TIME AT t
t
1
2
T
– T = P R (t)
(pk) θJC
SINGLE PULSE
J(pk)
C
DUTY CYCLE, D = t /t
1 2
0.01
0.01
0.02 0.03 0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
20
30
50
100
200 300
500
1000
t, TIME (ms)
Figure 3. Thermal Response
FORWARD BIAS
T
= 25°C SINGLE PULSE
C
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
30
20
0.1 ms
down. Safe operating area curves indicate I – V
limits of
10
0.5 ms
1.0 ms
5.0 ms
C
CE
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
5.0
2.0
1.0
0.5
dc
WIRE BOND LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
The data of Figure 4 is based on T
= 150 C; T is
C
J(pk)
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
may be calculated from the data in
MJH11017, MJH11018
MJH11019, MJH11020
MJH11021, MJH11022
150 C.
T
J(pk)
0.2
0
Figure 3. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
2.0 3.0 5.0
10
20 30 50
100 150 250
V
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
CE
Figure 4. Maximum Rated Forward Bias
Safe Operating Area (FBSOA)
30
20
10
0
REVERSE BIAS
For inductive loads, high voltage and high current must be
sustained simultaneously during turn–off, in most cases, with
the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping,
RC snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage–current conditions during re-
verse biased turn–off. This rating is verified under clamped
conditions so that the device is never subjected to an ava-
lanche mode. Figure 5 gives RBSOA characteristics.
L = 200
µH
I
T
/I ≥ 50
C B1
= 100°C
C
V
R
= 0–5.0 V
Ω
BE(off)
BE
= 47
DUTY CYCLE = 10%
MJH11017, MJH11018
MJH11019, MJH11020
MJH11021, MJH11022
0
20
60
100
140
180
220
260
V
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
CE
Figure 5. Maximum Rated Reverse Bias
Safe Operating Area (RBSOA)
3
Motorola Bipolar Power Transistor Device Data
PNP
NPN
10,000
7000
10,000
5000
V
= 5.0 V
V
= 5.0 V
CE
CE
5000
T
= 150°C
3000
2000
C
T
= 150
°
C
2000
1000
500
C
25°C
1000
500
25
°C
–55°C
–55°C
200
100
200
100
0.2 0.3
0.5 0.7 1.0
3.0
5.0
10
15
0.2 0.3
0.5 0.7 1.0
3.0
5.0 7.0 10 15
I
, COLLECTOR CURRENT (AMPS)
I
, COLLECTOR CURRENT (AMPS)
C
C
Figure 6. DC Current Gain
PNP
NPN
4.5
4.0
3.5
3.0
2.5
2.0
4.5
T
= 25
°
C
T = 25°C
J
J
4.0
3.5
3.0
I
= 15 A
= 10 A
C
2.5
2.0
I
= 15 A
C
I
C
I
= 10 A
C
1.5
1.0
1.5
1.0
I
= 5.0 A
I
= 5.0 A
C
C
1.0
2.0 3.0 5.0
10
20 30 50
100 200 300 500 1000
1.0
2.0 3.0 5.0
10
20 30 50
100 200300 500 1000
I
, BASE CURRENT (mA)
I
, BASE CURRENT (mA)
B
B
Figure 7. Collector Saturation Region
PNP
NPN
4.0
4.0
3.5
T
= 25°C
3.5
T = 25°C
J
J
3.0
2.5
3.0
2.5
V
@ I /I = 100
C B
V
@ I /I = 100
2.0
1.5
BE(sat)
2.0
1.5
BE(sat) C B
V
@ V = 5.0 V
CE
BE
V
@ V
= 5.0 V
BE
CE
1.0
0.5
1.0
0.5
V
@ I /I = 100
C B
V
@ I /I = 100
C B
CE(sat)
CE(sat)
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20
0.2
0.5 0.7 1.0
2.0
5.0
10
20
I
, COLLECTOR CURRENT (AMPS)
I , COLLECTOR CURRENT (AMPS)
C
C
Figure 8. “On” Voltages
4
Motorola Bipolar Power Transistor Device Data
PNP
NPN
MJH11018
MJH11020
MJH11022
MJH11017
MJH11019
MJH11021
COLLECTOR
COLLECTOR
BASE
BASE
EMITTER
EMITTER
Figure 9. Darlington Schematic
5
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
C
Q
B
E
MILLIMETERS
INCHES
MIN
DIM
A
B
C
D
E
G
H
J
MIN
19.00
14.00
4.20
MAX
19.60
14.50
4.70
MAX
0.771
0.570
0.185
0.051
0.064
0.225
0.118
0.023
1.259
0.602
0.167
0.712
0.149
0.078
U
4
0.749
0.551
0.165
0.040
0.058
0.206
0.103
0.016
1.123
0.579
0.158
0.689
0.134
0.060
A
L
S
1.00
1.30
1.45
1.65
1
2
3
5.21
5.72
K
2.60
3.00
0.40
0.60
K
L
Q
S
U
V
28.50
14.70
4.00
32.00
15.30
4.25
17.50
3.40
18.10
3.80
1.50
2.00
D
J
STYLE 1:
PIN 1. BASE
H
V
2. COLLECTOR
3. EMITTER
G
4. COLLECTOR
CASE 340D–01
SOT 93, TO–218 TYPE
ISSUE A
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
andspecifically disclaims any and all liability, includingwithoutlimitationconsequentialorincidentaldamages. “Typical” parameters can and do vary in different
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MJH11017/D
◊
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