MRF1518T1 [MOTOROLA]
RF Power Field Effect Transistor; 射频功率场效应晶体管
| 型号： | MRF1518T1 |
| 厂家： | 
MOTOROLA |
| 描述： | RF Power Field Effect Transistor |
| 文件： | 总20页 (文件大小：754K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MRF1518
Rev. 6, 3/2005
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
MRF1518NT1
MRF1518T1
Designed for broadband commercial and industrial applications with frequen-
cies to 520 MHz. The high gain and broadband performance of this device
make it ideal for large-signal, common source amplifier applications in 12.5 volt
mobile FM equipment.
• Specified Performance @ 520 MHz, 12.5 Volts
Output Power — 8 Watts
D
520 MHz, 8 W, 12.5 V
LATERAL N-CHANNEL
BROADBAND
Power Gain — 11 dB
Efficiency — 55%
• Capable of Handling 20:1 VSWR, @ 15.5 Vdc,
RF POWER MOSFET
520 MHz, 2 dB Overdrive
• Excellent Thermal Stability
• Characterized with Series Equivalent Large-Signal
Impedance Parameters
• RF Power Plastic Surface Mount Package
G
• Broadband UHF/VHF Demonstration Amplifier
Information Available Upon Request
• N Suffix Indicates Lead-Free Terminations
S
CASE 466-03, STYLE 1
PLD-1.5
• Available in Tape and Reel. T1 Suffix = 1,000 Units per 12 mm,
7 Inch Reel.
PLASTIC
Table 1. Maximum Ratings
Rating
Symbol
Value
-0.5, +40
20
Unit
Vdc
Vdc
Adc
Drain-Source Voltage
Gate-Source Voltage
V
DSS
V
GS
Drain Current — Continuous
I
D
4
(1)
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
62.5
0.50
W
W/°C
C
Storage Temperature Range
Operating Junction Temperature
Table 2. Thermal Characteristics
T
- 65 to +150
150
°C
°C
stg
T
J
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
Table 3. Moisture Sensitivity Level
Test Methodology
R
2
°C/W
θ
JC
Rating
Package Peak Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
1
260
°C
T
T
C
J –
1. Calculated based on the formula P
=
D
R
θJC
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Freescale Semiconductor, Inc., 2005. All rights reserved.
Table 4. Electrical Characteristics (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Current
I
—
—
—
—
1
1
µAdc
µAdc
DSS
(V = 40 Vdc, V = 0 Vdc)
DS
GS
Gate-Source Leakage Current
I
GSS
(V = 10 Vdc, V = 0 Vdc)
GS
DS
On Characteristics
Gate Threshold Voltage
(V = 12.5 Vdc, I = 100 µA)
V
1.0
—
1.6
0.4
2.1
—
Vdc
Vdc
GS(th)
DS
D
Drain-Source On-Voltage
(V = 10 Vdc, I = 1 Adc)
V
DS(on)
GS
D
Dynamic Characteristics
Input Capacitance
(V = 12.5 Vdc, V = 0, f = 1 MHz)
DS
C
—
—
—
66
33
—
—
—
pF
pF
pF
iss
GS
Output Capacitance
(V = 12.5 Vdc, V = 0, f = 1 MHz)
DS
C
oss
GS
Reverse Transfer Capacitance
(V = 12.5 Vdc, V = 0, f = 1 MHz)
C
4.5
rss
DS
GS
Functional Tests (In Freescale Test Fixture)
Common-Source Amplifier Power Gain
G
10
50
11
55
—
—
dB
%
ps
(V = 12.5 Vdc, P = 8 Watts, I = 150 mA, f = 520 MHz)
DD
out
DQ
Drain Efficiency
η
(V = 12.5 Vdc, P = 8 Watts, I = 150 mA, f = 520 MHz)
DD
out
DQ
MRF1518NT1 MRF1518T1
RF Device Data
Freescale Semiconductor
2
B2
V
GG
+
V
DD
B1
+
C8
C7
C6
R4
C15
C14
C13
N2
C16
R3
R2
L1
C5
Z6
Z7
Z8
Z9
Z10
RF
OUTPUT
R1
C4
DUT
N1
C12
Z1
Z2
Z3
Z4
Z5
RF
INPUT
C10
C11
C9
C1
C2
C3
B1, B2
Short Ferrite Beads, Fair Rite Products
(2743021446)
R4
Z1
Z2
Z3
Z4
Z5, Z6
Z7
Z8
Z9
33 kΩ, 1/8 W Resistor
0.451″ x 0.080″ Microstrip
1.005″ x 0.080″ Microstrip
0.020″ x 0.080″ Microstrip
0.155″ x 0.080″ Microstrip
0.260″ x 0.223″ Microstrip
0.065″ x 0.080″ Microstrip
0.266″ x 0.080″ Microstrip
1.113″ x 0.080″ Microstrip
C1, C12
C2, C3, C10, C11
C4
C5, C16
C6, C13
C7, C14
C8, C15
C9
240 pF, 100 mil Chip Capacitors
0 to 20 pF Trimmer Capacitors
82 pF, 100 mil Chip Capacitor
120 pF, 100 mil Chip Capacitors
10 µF, 50 V Electrolytic Capacitors
1,200 pF, 100 mil Chip Capacitors
0.1 mF, 100 mil Chip Capacitors
30 pF, 100 mil Chip Capacitor
55.5 nH, 5 Turn, Coilcraft
Z10
Board
0.433″ x 0.080″ Microstrip
L1
Glass Teflon , 31 mils, 2 oz. Copper
N1, N2
R1
R2
Type N Flange Mounts
15 Ω Chip Resistor (0805)
51 Ω, 1/2 W Resistor
R3
10 Ω Chip Resistor (0805)
Figure 1. 450 - 520 MHz Broadband Test Circuit
TYPICAL CHARACTERISTICS, 450 - 520 MHz
12
0
V
DD
= 12.5 Vdc
10
8
450 MHz
−5
470 MHz
500 MHz
470 MHz
500 MHz
−10
6
520 MHz
450 MHz
4
−15
−20
520 MHz
9
2
0
V
DD
= 12.5 Vdc
0.5
0
0.1
0.2
0.3
0.4
0.6
0
1
2
3
4
5
6
7
8
10 11
P , INPUT POWER (WATTS)
in
P , OUTPUT POWER (WATTS)
out
Figure 2. Output Power versus Input Power
Figure 3. Input Return Loss
versus Output Power
MRF1518NT1 MRF1518T1
RF Device Data
Freescale Semiconductor
3
TYPICAL CHARACTERISTICS, 450 - 520 MHz
17
15
13
11
80
70
60
50
40
30
20
10
470 MHz
500 MHz
450 MHz
520 MHz
470 MHz
450 MHz
520 MHz
500 MHz
9
V
DD
= 12.5 Vdc
7
5
V
DD
= 12.5 Vdc
0
0
1
2
3
4
5
6
7
8
9
10
11
0
1
2
3
4
5
6
7
8
9
10 11 12
P , OUTPUT POWER (WATTS)
out
P , OUTPUT POWER (WATTS)
out
Figure 4. Gain versus Output Power
Figure 5. Drain Efficiency versus Output Power
70
65
60
55
50
45
40
12
10
8
470 MHz
470 MHz
450 MHz
450 MHz
500 MHz
520 MHz
520 MHz
500 MHz
6
4
V
= 12.5 Vdc
P = 26.2 dBm
DD
V
= 12.5 Vdc
P = 26.2 dBm
2
0
DD
35
30
in
in
0
200
400
600
800
1000
0
200
400
I , BIASING CURRENT (mA)
DQ
600
800
1000
I
, BIASING CURRENT (mA)
DQ
Figure 6. Output Power versus Biasing Current
Figure 7. Drain Efficiency versus
Biasing Current
12
80
75
70
65
60
55
50
45
40
470 MHz
450 MHz
11
10
9
470 MHz
450 MHz
8
520 MHz
500 MHz
7
6
520 MHz
500 MHz
5
4
I
= 150 mA
P = 26.2 dBm
I
= 150 mA
P = 26.2 dBm
DQ
DQ
in
in
3
2
35
30
8
9
10
11
12
13
14
15
16
8
9
10
11
, SUPPLY VOLTAGE (VOLTS)
DD
12
13
14
15
16
V
DD
, SUPPLY VOLTAGE (VOLTS)
V
Figure 8. Output Power versus Supply Voltage
Figure 9. Drain Efficiency versus Supply Voltage
MRF1518NT1 MRF1518T1
RF Device Data
Freescale Semiconductor
4
B1
B2
V
GG
V
DD
+
+
C15
C8
C7
C6
C5
C12
C13
C14
L1
R1
DUT
N1
N2
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
RF
INPUT
RF
OUTPUT
C1
C11
L2
C2
C3
C4
C9
C10
B1, B2
C1, C9
C2
C3, C4
C5
C6, C13
C7, C14
C8
Long Ferrite Beads, Fair Rite Products
12 pF, 100 mil Chip Capacitors
6.8 pF, 100 mil Chip Capacitor
20 pF, 100 mil Chip Capacitors
51 pF, 100 mil Chip Capacitor
1000 pF, 100 mil Chip Capacitors
0.039 µF, 100 mil Chip Capacitors
1 µF, 20 V Tantalum Chip Capacitor
3 pF, 100 mil Chip Capacitor
N1, N2
R1
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Type N Flange Mounts
47 Ω Chip Resistor (0805)
1.145″ x 0.080″ Microstrip
0.786″ x 0.080″ Microstrip
0.115″ x 0.223″ Microstrip
0.145″ x 0.223″ Microstrip
0.260″ x 0.223″ Microstrip
0.081″ x 0.080″ Microstrip
0.104″ x 0.080″ Microstrip
C10
C11, C12
C15
L1, L2
51 pF, 100 mil Chip Capacitors
22 µF, 35 V Tantalum Chip Capacitor
18.5 nH, 5 Turn, Coilcraft
Z8
Board
1.759″ x 0.080″ Microstrip
Glass Teflon , 31 mils, 2 oz. Copper
Figure 10. 820 - 850 MHz Broadband Test Circuit
TYPICAL CHARACTERISTICS, 820 - 850 MHz
12
0
V
DD
= 12.5 Vdc
840 MHz
10
8
840 MHz
830 MHz
−10
850 MHz
850 MHz
820 MHz
6
−20
820 MHz
4
−30
−40
2
0
830 MHz
7
V
DD
= 12.5 Vdc
0
0.1
0.2
0.3
0.4
0.5
0.6
1
2
3
4
5
6
8
9
10
11 12
P , INPUT POWER (WATTS)
in
P , OUTPUT POWER (WATTS)
out
Figure 11. Output Power versus Input Power
Figure 12. Input Return Loss
versus Output Power
MRF1518NT1 MRF1518T1
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS, 820 - 850 MHz
17
15
13
11
9
80
850 MHz
850 MHz
840 MHz
70
60
50
40
30
20
840 MHz
820 MHz
830 MHz
820 MHz
830 MHz
7
5
10
0
V
DD
= 12.5 Vdc
V
DD
= 12.5 Vdc
1
2
3
4
5
6
7
8
9
10 11
12
1
2
3
4
5
P , OUTPUT POWER (WATTS)
out
6
7
8
9
10 11 12
P
, OUTPUT POWER (WATTS)
out
Figure 13. Gain versus Output Power
Figure 14. Drain Efficiency versus Output
Power
70
60
12
10
850 MHz
820 MHz
830 MHz
840 MHz
820 MHz
850 MHz
50
40
30
8
6
830 MHz
840 MHz
4
20
10
0
2
0
V
DD
= 12.5 Vdc
800
V
DD
= 12.5 Vdc
800
1000
0
200
400
600
1000
0
200
400
I , BIASING CURRENT (mA)
DQ
600
I , BIASING CURRENT (mA)
DQ
Figure 15. Output Power versus
Biasing Current
Figure 16. Drain Efficiency versus
Biasing Current
12
80
75
70
65
60
55
50
45
40
35
30
11
10
9
840 MHz
840 MHz
830 MHz
850 MHz
8
7
820 MHz
830 MHz
6
5
4
3
850 MHz
820 MHz
V
DD
= 12.5 Vdc
V
= 12.5 Vdc
15 16
DD
2
8
9
10
11
12
13
14
15
16
8
9
10
11
V , SUPPLY VOLTAGE (VOLTS)
DD
12
13
14
V
DD
, SUPPLY VOLTAGE (VOLTS)
Figure 17. Output Power versus
Supply Voltage
Figure 18. Drain Efficiency versus
Supply Voltage
MRF1518NT1 MRF1518T1
RF Device Data
Freescale Semiconductor
6
B2
V
GG
+
V
DD
B1
+
C10
C9
C8
R4
C18
C17
C16
C15
R3
R2
L1
C7
N2
Z7
Z8
Z9
Z10
Z11
RF
OUTPUT
R1
C6
DUT
N1
C14
Z1
Z2
Z3
Z4
Z5
Z6
RF
INPUT
C12
C13
C11
C1
C3
C2
C4 C5
B1, B2
C1, C14
C2, C3, C4, C11,
C12, C13
C5
Short Ferrite Beads, Fair Rite Products
(2743021446)
240 pF, 100 mil Chip Capacitors
R3
R4
Z1
Z2
Z3
Z4
Z5
Z6, Z7
Z8
Z9
10 Ω Chip Resistor (0805)
33 kΩ, 1/8 W Resistor
0.476″ x 0.080″ Microstrip
0.724″ x 0.080″ Microstrip
0.348″ x 0.080″ Microstrip
0.048″ x 0.080″ Microstrip
0.175″ x 0.080″ Microstrip
0.260″ x 0.223″ Microstrip
0.239″ x 0.080″ Microstrip
0.286″ x 0.080″ Microstrip
0.806″ x 0.080″ Microstrip
0 to 20 pF Trimmer Capacitors
30 pF, 100 mil Chip Capacitor
47 pF, 100 mil Chip Capacitor
120 pF, 100 mil Chip Capacitors
10 µF, 50 V Electrolytic Capacitors
1,200 pF, 100 mil Chip Capacitors
0.1 µF, 100 mil Chip Capacitors
55.5 nH, 5 Turn, Coilcraft
C6
C7, C18
C8, C15
C9, C16
C10, C17
L1
N1, N2
R1
R2
Z10
Z11
Board
0.553″ x 0.080″ Microstrip
Type N Flange Mounts
15 Ω Chip Resistor (0805)
51 Ω, 1/2 W Resistor
Glass Teflon , 31 mils, 2 oz. Copper
Figure 19. 400 - 470 MHz Broadband Test Circuit
TYPICAL CHARACTERISTICS, 400 - 470 MHz
12
0
440 MHz
V
DD
= 12.5 Vdc
10
8
400 MHz
−5
470 MHz
440 MHz
400 MHz
−10
6
4
V
DD
= 12.5 Vdc
−15
−20
2
0
470 MHz
7
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0
1
2
3
4
5
6
8
9
10 11 12
P , INPUT POWER (WATTS)
in
P , OUTPUT POWER (WATTS)
out
Figure 20. Output Power versus Input Power
Figure 21. Input Return Loss
versus Output Power
MRF1518NT1 MRF1518T1
RF Device Data
Freescale Semiconductor
7
TYPICAL CHARACTERISTICS, 400 - 470 MHz
17
15
13
11
9
80
70
60
50
40
30
440 MHz
470 MHz
440 MHz
400 MHz
400 MHz
470 MHz
V
DD
= 12.5 Vdc
20
V
DD
= 12.5 Vdc
7
5
10
0
0
1
2
3
4
5
6
7
8
9
10 11 12
0
1
2
3
4
5
6
7
, OUTPUT POWER (WATTS)
out
8
9
10 11 12
P
out
, OUTPUT POWER (WATTS)
P
Figure 22. Gain versus Output Power
Figure 23. Drain Efficiency versus Output
Power
70
65
60
55
50
45
40
12
10
8
440 MHz
470 MHz
440 MHz
400 MHz
470 MHz
400 MHz
6
4
V
= 12.5 Vdc
P = 26.8 dBm
DD
in
V
= 12.5 Vdc
P = 26.8 dBm
2
0
DD
35
30
in
0
200
400
600
800
1000
0
200
400
I , BIASING CURRENT (mA)
DQ
600
800
1000
I
, BIASING CURRENT (mA)
DQ
Figure 24. Output Power versus
Biasing Current
Figure 25. Drain Efficiency versus
Biasing Current
12
11
10
9
80
75
70
65
60
55
50
45
40
440 MHz
400 MHz
470 MHz
8
7
440 MHz
400 MHz
6
470 MHz
5
4
I
= 150 mA
P = 26.8 dBm
DQ
I
= 150 mA
DQ
in
P = 26.8 dBm
in
3
2
35
30
8
9
10
11
12
13
14
15
16
8
9
10
11
V , SUPPLY VOLTAGE (VOLTS)
DD
12
13
14
15
16
V
DD
, SUPPLY VOLTAGE (VOLTS)
Figure 26. Output Power versus
Supply Voltage
Figure 27. Drain Efficiency versus
Supply Voltage
MRF1518NT1 MRF1518T1
RF Device Data
Freescale Semiconductor
8
B2
V
GG
+
V
DD
B1
+
C9
C8
C7
R4
C16
C15
C14
C17
R3
R2
L4
C6
RF
OUTPUT
L2
L3
C13
Z10
Z6
Z7
Z8
Z9
RF
INPUT
R1
DUT
N2
L1
Z1
Z2
Z3
Z4
Z5
C12
C10
C1
N1
C11
C4
C3
C5
C2
B1, B2
Short Ferrite Beads, Fair Rite Products
(2743021446)
L4
N1, N2
R1
R2
R3
R4
Z1
Z2
Z3
Z4
Z5, Z6
Z7
Z8
Z9
55.5 nH, 5 Turn, Coilcraft
Type N Flange Mounts
15 W Chip Resistor (0805)
56 W, 1/4 W Carbon Resistor
100 W Chip Resistor (0805)
33 kW, 1/8 W Carbon Resistor
0.115″ x 0.080″ Microstrip
0.255″ x 0.080″ Microstrip
1.037″ x 0.080″ Microstrip
0.192″ x 0.080″ Microstrip
0.260″ x 0.223″ Microstrip
0.125″ x 0.080″ Microstrip
0.962″ x 0.080″ Microstrip
0.305″ x 0.080″ Microstrip
C1, C13
C2, C4, C11
C3
330 pF, 100 mil Chip Capacitors
0 to 20 pF Trimmer Capacitors
12 pF, 100 mil Chip Capacitor
43 pF, 100 mil Chip Capacitor
75 pF, 100 mil Chip Capacitors
10 µF, 50 V Electrolytic Capacitors
1,200 pF, 100 mil Chip Capacitors
0.1 µF, 100 mil Chip Capacitors
75 pF, 100 mil Chip Capacitor
13 pF, 100 mil Chip Capacitor
26 nH, 4 Turn, Coilcraft
C5
C6, C17
C7, C14
C8, C15
C9, C16
C10
C12
L1
L2
L3
5 nH, 2 Turn, Coilcraft
33 nH, 5 Turn, Coilcraft
Z10
Board
0.155″ x 0.080″ Microstrip
Glass Teflon , 31 mils, 2 oz. Copper
Figure 28. 135 - 175 MHz Broadband Test Circuit
TYPICAL CHARACTERISTICS, 135 - 175 MHz
12
0
V
DD
= 12.5 Vdc
10
8
−5
−10
−15
155 MHz
155 MHz
6
175 MHz
135 MHz
135 MHz
175 MHz
4
2
0
V
= 12.5 Vdc
0.3
DD
−20
0
0.1
0.2
P , INPUT POWER (WATTS)
0.4
0
1
2
3
4
5
6
7
8
9
10 11 12
P , OUTPUT POWER (WATTS)
out
in
Figure 29. Output Power versus Input Power
Figure 30. Input Return Loss
versus Output Power
MRF1518NT1 MRF1518T1
RF Device Data
Freescale Semiconductor
9
TYPICAL CHARACTERISTICS, 135 - 175 MHz
19
17
15
13
11
80
70
60
135 MHz
175 MHz
155 MHz
135 MHz
50
155 MHz
175 MHz
40
30
20
10
V
DD
= 12.5 Vdc
9
7
V
DD
= 12.5 Vdc
0
0
1
2
3
4
5
6
7
8
9
10 11 12
0
1
2
3
4
5
6
7
8
9
10 11 12
P , OUTPUT POWER (WATTS)
out
P , OUTPUT POWER (WATTS)
out
Figure 31. Gain versus Output Power
Figure 32. Drain Efficiency versus Output
Power
12
10
70
65
60
55
50
45
40
175 MHz
155 MHz
135 MHz
135 MHz
155 MHz
175 MHz
8
6
4
V
= 12.5 Vdc
P = 24.5 dBm
DD
V
= 12.5 Vdc
P = 24.5 dBm
2
0
DD
35
30
in
in
0
200
400
600
800
1000
0
200
400
I , BIASING CURRENT (mA)
DQ
600
800
1000
I
, BIASING CURRENT (mA)
DQ
Figure 33. Output Power versus
Biasing Current
Figure 34. Drain Efficiency versus
Biasing Current
12
11
10
9
80
75
70
65
60
55
50
45
40
135 MHz
155 MHz
155 MHz
135 MHz
175 MHz
8
175 MHz
7
6
5
I
= 150 mA
P = 24.5 dBm
DQ
I
= 150 mA
P = 24.5 dBm
4
DQ
in
in
3
2
35
30
8
9
10
11
12
13
14
15
16
8
9
10
11
V , SUPPLY VOLTAGE (VOLTS)
DD
12
13
14
15
16
V
DD
, SUPPLY VOLTAGE (VOLTS)
Figure 35. Output Power versus
Supply Voltage
Figure 36. Drain Efficiency versus
Supply Voltage
MRF1518NT1 MRF1518T1
RF Device Data
Freescale Semiconductor
10
Z = 10 Ω
o
Z = 10 Ω
o
Z
in
520
520
f = 850 MHz
f = 450 MHz
Z
*
OL
f = 850 MHz
f = 450 MHz
Z
*
OL
f = 820 MHz
f = 820 MHz
Z
in
V
DD
= 12.5 V, I = 150 mA, P = 8 W
DQ out
V = 12.5 V, I = 150 mA, P = 8 W
DD DQ out
f
Z
in
Z
OL
*
f
Z
in
Z
OL
*
MHz
450
470
Ω
Ω
MHz
820
830
Ω
Ω
4.9 +j2.85
6.42 +j3.23
1.42 -j0.32 2.34 +j0.23
1.39 -j0.21 2.36 +j0.47
4.85 +j3.71 4.59 +j3.61
4.63 +j3.84 4.72 +j3.12
3.52 +j3.92 3.81 +j3.27
500
520
840
850
1.32 -j0.16 2.40 +j0.69
1.23 -j0.13 2.37 +j0.79
Z
Z
= Complex conjugate of source
impedance with parallel 15 Ω
resistor and 82 pF capacitor in
series with gate. (See Figure 1).
Z
Z
= Complex conjugate of source
impedance.
in
in
* = Complex conjugate of the load
impedance at given output power,
OL
* = Complex conjugate of the load
impedance at given output power,
voltage, frequency, and η > 50 %.
OL
D
voltage, frequency, and η > 50 %.
D
Note: Z * was chosen based on tradeoffs between gain, drain efficiency, and device stability.
OL
Output
Matching
Network
Input
Matching
Network
Device
Under Test
Z
Z
*
in
OL
Figure 37. Series Equivalent Input and Output Impedance
MRF1518NT1 MRF1518T1
RF Device Data
Freescale Semiconductor
11
f = 470 MHz
Z
in
Z
*
OL
f = 470 MHz
135
400
175
Z = 10 Ω
o
Z
in
Z
*
OL
400
f = 175 MHz
f = 135 MHz
V
DD
= 12.5 V, I = 150 mA, P = 8 W
DQ out
V = 12.5 V, I = 150 mA, P = 8 W
DD DQ out
f
Z
in
Z
OL
*
f
Z
in
Z
OL
*
MHz
400
440
Ω
Ω
MHz
135
155
Ω
Ω
4.28 +j2.36 4.41 +j0.67
6.45 +j5.13 4.14 +j2.53
18.31 -j0.76 8.97 +j2.62
17.72 +j1.85 9.69 +j2.81
470
5.91 +j3.34 3.92 +j4.02
175
18.06 +j5.23 7.94 +j1.14
Z
Z
= Complex conjugate of source
impedance with parallel 15 Ω
resistor and 47 pF capacitor in
series with gate. (See Figure 19).
Z
Z
= Complex conjugate of source
impedance with parallel 15 Ω
resistor and 43 pF capacitor in
series with gate. (See Figure 28).
in
in
* = Complex conjugate of the load
impedance at given output power,
* = Complex conjugate of the load
impedance at given output power,
OL
OL
voltage, frequency, and η > 50 %.
voltage, frequency, and η > 50 %.
D
D
Note: Z * was chosen based on tradeoffs between gain, drain efficiency, and device stability.
OL
Output
Matching
Network
Input
Matching
Network
Device
Under Test
Z
Z
*
in
OL
Figure 37. Series Equivalent Input and Output Impedance (continued)
MRF1518NT1 MRF1518T1
12
RF Device Data
Freescale Semiconductor
Table 5. Common Source Scattering Parameters (VDD = 12.5 Vdc)
IDQ = 150 mA
S
11
S
21
S
12
S
22
f
|S
11
|
∠φ
|S
21
|
∠φ
|S
12
|
∠φ
|S |
22
∠φ
MHz
50
100
200
300
400
500
600
700
800
900
1000
0.88
0.85
0.85
0.87
0.88
0.90
0.92
0.93
0.94
0.94
0.96
-148
-163
-170
-171
-172
-173
-173
-174
-175
-175
-176
18.91
9.40
4.47
2.72
1.85
1.35
1.04
0.83
0.68
0.55
0.46
99
86
73
64
56
52
47
44
39
36
30
0.033
0.033
0.026
0.025
0.021
0.019
0.014
0.015
0.014
0.010
0.011
11
0.67
0.66
0.69
0.74
0.79
0.83
0.85
0.88
0.90
0.91
0.95
-144
-158
-162
-163
-164
-165
-167
-168
-169
-170
-170
-6
-17
-28
-21
-30
-26
-39
-31
-41
-38
IDQ = 800 mA
S
11
S
21
S
12
S
22
f
|S
|
∠φ
|S
|
∠φ
97
88
79
73
67
63
59
55
50
46
41
|S
|
∠φ
14
|S |
22
∠φ
MHz
11
21
12
50
100
200
300
400
500
600
700
800
900
1000
0.90
0.88
0.88
0.89
0.89
0.90
0.91
0.92
0.93
0.94
0.94
-159
-169
-174
-175
-175
-176
-176
-176
-176
-177
-177
20.80
10.35
5.09
3.23
2.30
1.74
1.39
1.16
0.96
0.80
0.67
0.020
0.018
0.017
0.015
0.015
0.014
0.014
0.009
0.011
0.007
0.010
0.73
0.74
0.75
0.77
0.80
0.82
0.83
0.85
0.87
0.88
0.89
-162
-169
-171
-171
-171
-170
-171
-171
-172
-173
-173
1
-9
-18
-17
-22
-19
-23
-14
4
-15
IDQ = 1.5 A
S
11
S
21
S
12
S
22
f
|S
|
∠φ
|S
|
∠φ
97
89
80
73
67
64
59
55
50
46
41
|S
|
∠φ
11
|S |
22
∠φ
MHz
11
21
12
50
100
200
300
400
500
600
700
800
900
1000
0.91
0.89
0.88
0.89
0.89
0.90
0.92
0.92
0.93
0.94
0.94
-159
-169
-174
-175
-176
-176
-176
-176
-177
-177
-178
20.18
10.05
4.93
3.14
2.24
1.70
1.36
1.13
0.94
0.78
0.65
0.015
0.016
0.015
0.014
0.014
0.014
0.010
0.013
0.008
0.013
0.007
0.73
0.74
0.75
0.78
0.80
0.82
0.84
0.85
0.87
0.87
0.87
-165
-171
-172
-172
-171
-170
-171
-171
-172
-173
-172
-5
-3
-14
-20
-22
-16
-10
-13
-26
8
MRF1518NT1 MRF1518T1
RF Device Data
Freescale Semiconductor
13
APPLICATIONS INFORMATION
DESIGN CONSIDERATIONS
This device is a common-source, RF power, N-Channel
enhancement mode, Lateral Metal-Oxide Semiconductor
Field-Effect Transistor (MOSFET). Freescale Application
Note AN211A, “FETs in Theory and Practice”, is suggested
reading for those not familiar with the construction and char-
acteristics of FETs.
This surface mount packaged device was designed pri-
marily for VHF and UHF portable power amplifier applica-
tions. Manufacturability is improved by utilizing the tape and
reel capability for fully automated pick and placement of
parts. However, care should be taken in the design process
to insure proper heat sinking of the device.
drain-source voltage under these conditions is termed
DS(on). For MOSFETs, VDS(on) has a positive temperature
coefficient at high temperatures because it contributes to the
V
power dissipation within the device.
BVDSS values for this device are higher than normally re-
quired for typical applications. Measurement of BVDSS is not
recommended and may result in possible damage to the de-
vice.
GATE CHARACTERISTICS
The gate of the RF MOSFET is a polysilicon material, and
is electrically isolated from the source by a layer of oxide.
The DC input resistance is very high - on the order of 109 Ω
— resulting in a leakage current of a few nanoamperes.
Gate control is achieved by applying a positive voltage to
the gate greater than the gate-to-source threshold voltage,
The major advantages of Lateral RF power MOSFETs in-
clude high gain, simple bias systems, relative immunity from
thermal runaway, and the ability to withstand severely mis-
matched loads without suffering damage.
VGS(th)
.
Gate Voltage Rating — Never exceed the gate voltage
rating. Exceeding the rated VGS can result in permanent
damage to the oxide layer in the gate region.
MOSFET CAPACITANCES
The physical structure of a MOSFET results in capacitors
between all three terminals. The metal oxide gate structure
determines the capacitors from gate-to-drain (Cgd), and
gate-to-source (Cgs). The PN junction formed during fab-
rication of the RF MOSFET results in a junction capacitance
from drain-to-source (Cds). These capacitances are charac-
terized as input (Ciss), output (Coss) and reverse transfer
(Crss) capacitances on data sheets. The relationships be-
tween the inter-terminal capacitances and those given on
data sheets are shown below. The Ciss can be specified in
two ways:
Gate Termination — The gates of these devices are es-
sentially capacitors. Circuits that leave the gate open-cir-
cuited or floating should be avoided. These conditions can
result in turn-on of the devices due to voltage build-up on
the input capacitor due to leakage currents or pickup.
Gate Protection — These devices do not have an internal
monolithic zener diode from gate-to-source. If gate protec-
tion is required, an external zener diode is recommended.
Using a resistor to keep the gate-to-source impedance low
also helps dampen transients and serves another important
function. Voltage transients on the drain can be coupled to
the gate through the parasitic gate-drain capacitance. If the
gate-to-source impedance and the rate of voltage change
on the drain are both high, then the signal coupled to the gate
may be large enough to exceed the gate-threshold voltage
and turn the device on.
1. Drain shorted to source and positive voltage at the gate.
2. Positive voltage of the drain in respect to source and zero
volts at the gate.
In the latter case, the numbers are lower. However, neither
method represents the actual operating conditions in RF ap-
plications.
DC BIAS
Since this device is an enhancement mode FET, drain cur-
rent flows only when the gate is at a higher potential than the
source. RF power FETs operate optimally with a quiescent
drain current (IDQ), whose value is application dependent.
This device was characterized at IDQ = 150 mA, which is the
suggested value of bias current for typical applications. For
special applications such as linear amplification, IDQ may
have to be selected to optimize the critical parameters.
The gate is a dc open circuit and draws no current. There-
fore, the gate bias circuit may generally be just a simple re-
sistive divider network. Some special applications may
require a more elaborate bias system.
Drain
C
gd
C
C
C
= C + C
gd gs
Gate
iss
= C + C
ds
C
ds
oss
rss
gd
= C
gd
C
gs
Source
GAIN CONTROL
DRAIN CHARACTERISTICS
Power output of this device may be controlled to some de-
gree with a low power dc control signal applied to the gate,
thus facilitating applications such as manual gain control,
ALC/AGC and modulation systems. This characteristic is
very dependent on frequency and load line.
One critical figure of merit for a FET is its static resistance
in the full-on condition. This on-resistance, RDS(on), occurs
in the linear region of the output characteristic and is speci-
fied at a specific gate-source voltage and drain current. The
MRF1518NT1 MRF1518T1
RF Device Data
Freescale Semiconductor
14
MOUNTING
The specified maximum thermal resistance of 2°C/W as-
sumes a majority of the 0.065″ x 0.180″ source contact on
the back side of the package is in good contact with an ap-
propriate heat sink. As with all RF power devices, the goal of
the thermal design should be to minimize the temperature at
the back side of the package. Refer to Freescale Application
Note AN4005/D, “Thermal Management and Mounting Meth-
od for the PLD-1.5 RF Power Surface Mount Package,” and
Engineering Bulletin EB209/D, “Mounting Method for RF
Power Leadless Surface Mount Transistor” for additional in-
formation.
Large-signal impedances are provided, and will yield a good
first pass approximation.
Since RF power MOSFETs are triode devices, they are not
unilateral. This coupled with the very high gain of this device
yields a device capable of self oscillation. Stability may be
achieved by techniques such as drain loading, input shunt
resistive loading, or output to input feedback. The RF test fix-
ture implements a parallel resistor and capacitor in series
with the gate, and has a load line selected for a higher effi-
ciency, lower gain, and more stable operating region.
Two - port stability analysis with this device’s
S-parameters provides a useful tool for selection of loading
or feedback circuitry to assure stable operation. See Free-
scale Application Note AN215A, “RF Small-Signal Design
Using Two-Port Parameters” for a discussion of two port
network theory and stability.
AMPLIFIER DESIGN
Impedance matching networks similar to those used with
bipolar transistors are suitable for this device. For examples
see Freescale Application Note AN721, “Impedance
Matching Networks Applied to RF Power Transistors.”
MRF1518NT1 MRF1518T1
RF Device Data
Freescale Semiconductor
15
NOTES
MRF1518NT1 MRF1518T1
RF Device Data
Freescale Semiconductor
16
NOTES
MRF1518NT1 MRF1518T1
RF Device Data
Freescale Semiconductor
17
NOTES
MRF1518NT1 MRF1518T1
RF Device Data
Freescale Semiconductor
18
PACKAGE DIMENSIONS
0.146
3.71
A
F
0.095
2.41
3
0.115
2.92
0.115
2.92
1
2
R
D
L
B
0.020
0.51
4
_
"
0.35 (0.89) X 45
_
inches
mm
5
N
K
10 DRAFT
_
SOLDER FOOTPRINT
Q
P
U
INCHES
MIN
MILLIMETERS
DIM
A
B
C
D
E
MAX
0.265
0.235
0.072
0.150
0.026
0.044
0.070
0.063
0.180
0.285
0.255
0.240
0.008
0.063
0.210
0.012
0.012
0.021
0.010
0.010
MIN
6.48
5.72
1.65
3.30
0.53
0.66
1.27
1.14
4.06
6.93
6.22
5.84
0.00
1.40
5.08
0.15
0.15
0.00
0.00
0.00
MAX
6.73
5.97
1.83
3.81
0.66
1.12
1.78
1.60
4.57
7.24
6.48
6.10
0.20
1.60
5.33
0.31
0.31
0.53
0.25
0.25
H
ZONE V
ZONE W
C
0.255
0.225
0.065
0.130
0.021
0.026
0.050
0.045
0.160
0.273
0.245
0.230
0.000
0.055
0.200
0.006
0.006
E
Y
Y
4
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1984.
2. CONTROLLING DIMENSION: INCH
3. RESIN BLEED/FLASH ALLOWABLE IN ZONE V, W,
AND X.
F
G
H
J
2
1
K
L
STYLE 1:
PIN 1. DRAIN
2. GATE
N
P
3
3. SOURCE
4. SOURCE
Q
R
S
S
G
ZONE X
U
ZONE V 0.000
ZONE W 0.000
ZONE X 0.000
VIEW Y-Y
CASE 466-03
ISSUE C
PLD-1.5
PLASTIC
MRF1518NT1 MRF1518T1
RF Device Data
Freescale Semiconductor
19
How to Reach Us:
Home Page:
www.freescale.com
E-mail:
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USA/Europe or Locations Not Listed:
Freescale Semiconductor
Technical Information Center, CH370
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Chandler, Arizona 85224
+1-800-521-6274 or +1-480-768-2130
support@freescale.com
Information in this document is provided solely to enable system and software
implementers to use Freescale Semiconductor products. There are no express or
implied copyright licenses granted hereunder to design or fabricate any integrated
circuits or integrated circuits based on the information in this document.
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Semiconductor was negligent regarding the design or manufacture of the part.
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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc.
All other product or service names are the property of their respective owners.
Freescale Semiconductor, Inc. 2005. All rights reserved.
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Document Number:
Rev. 6, 3/2005
MRF1518
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