MRF18085A [MOTOROLA]

The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs; 射频MOSFET行射频功率场效应晶体管N沟道增强模式横向的MOSFET
MRF18085A
型号: MRF18085A
厂家: MOTOROLA    MOTOROLA
描述:

The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
射频MOSFET行射频功率场效应晶体管N沟道增强模式横向的MOSFET

晶体 晶体管 功率场效应晶体管 射频
文件: 总8页 (文件大小:406K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
ꢒ ꢓꢎ ꢓ ꢀꢓ ꢔꢕ  
SEMICONDUCTOR TECHNICAL DATA  
Order this document  
by MRF18085A/D  
The RF MOSFET Line  
ꢀ ꢁ ꢂ ꢃꢄꢅ ꢆ ꢁꢇꢅ ꢈꢉ ꢊ ꢋꢋ ꢅ ꢌꢍ ꢎꢆ ꢏꢐ ꢑ ꢇꢑ ꢍꢃ ꢆ ꢑ  
N–Channel Enhancement–Mode Lateral MOSFETs  
Designed for GSM and GSM EDGE base station applications with  
frequencies from 1.8 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier  
amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and  
WLL applications. Specified for GSM–GSM EDGE 1805 – 1880 MHz.  
GSM/GSM EDGE  
1.8 – 1.88 GHz, 85 W, 26 V  
LATERAL N–CHANNEL  
RF POWER MOSFETs  
GSM and GSM EDGE Performance, Full Frequency Band  
(1805–1880 MHz)  
Power Gain – 15 dB (Typ) @ 85 Watts CW  
Efficiency – 52% (Typ) @ 85 Watts CW  
Internally Matched, Controlled Q, for Ease of Use  
High Gain, High Efficiency and High Linearity  
Integrated ESD Protection  
Designed for Maximum Gain and Insertion Phase Flatness  
Capable of Handling 5:1 VSWR, @ 26 Vdc, @ P1dB Output Power,  
@ f = 1805 MHz  
Excellent Thermal Stability  
Characterized with Series Equivalent Large–Signal Impedance Parameters  
CASE 465–06, STYLE 1  
NI–780  
MRF18085A, MRF18085AR3  
Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.  
Available with Low Gold Plating Thickness on Leads. L Suffix Indicates  
40µ″ Nominal.  
CASE 465A–06, STYLE 1  
NI–780S  
MRF18085ALSR3  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
65  
Unit  
Drain–Source Voltage  
Gate–Source Voltage  
V
DSS  
Vdc  
Vdc  
V
GS  
–0.5, +15  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
273  
1.56  
Watts  
W/°C  
C
Storage Temperature Range  
Operating Junction Temperature  
T
–65 to +200  
200  
°C  
°C  
stg  
T
J
THERMAL CHARACTERISTICS  
Characteristic  
Thermal Resistance, Junction to Case  
Symbol  
Max  
Unit  
R
0.64  
°C/W  
θ
JC  
ESD PROTECTION CHARACTERISTICS  
Test Conditions  
Class  
Human Body Model  
Machine Model  
1 (Typical)  
M3 (Typical)  
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and  
packaging MOS devices should be observed.  
REV 0  
Motorola, Inc. 2002  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
C
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Drain–Source Breakdown Voltage  
V
65  
10  
1
Vdc  
µAdc  
µAdc  
(BR)DSS  
(V = 0 Vdc, I = 100 µAdc)  
GS  
D
Zero Gate Voltage Drain Current  
(V = 26 Vdc, V = 0 Vdc)  
I
DSS  
DS  
GS  
Gate–Source Leakage Current  
(V = 5 Vdc, V = 0 Vdc)  
I
GSS  
GS  
DS  
ON CHARACTERISTICS  
Gate Threshold Voltage  
V
V
2
3.9  
4
Vdc  
Vdc  
Vdc  
S
GS(th)  
GS(Q)  
DS(on)  
(V = 10 Vdc, I = 200 µAdc)  
DS  
D
Gate Quiescent Voltage  
(V = 26 Vdc, I = 600 mAdc)  
2.5  
4.5  
DS  
D
Drain–Source On–Voltage  
(V = 10 Vdc, I = 2 Adc)  
V
0.15  
6.0  
GS  
D
Forward Transconductance  
(V = 10 Vdc, I = 2 Adc)  
g
fs  
DS  
D
DYNAMIC CHARACTERISTICS  
Reverse Transfer Capacitance (1)  
C
3.6  
pF  
rss  
(V = 26 Vdc, V = 0, f = 1 MHz)  
DS  
GS  
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system)  
Common–Source Amplifier Power Gain @ 85 W (2)  
G
13.5  
48  
15  
52  
–9  
dB  
%
ps  
(V = 26 Vdc, I = 800 mA, f = 1805 – 1880 MHz)  
DD  
DQ  
Drain Efficiency @ 85 W (2)  
(V = 26 Vdc, I = 800 mA, f = 1805 – 1880 MHz)  
η
DD  
DQ  
Input Return Loss @ 85 W (2)  
(V = 26 Vdc, I = 800 mA, f = 1805 – 1880 MHz)  
IRL  
–12  
90  
dB  
DD  
DQ  
P
out  
, 1 dB Compression Point  
P1dB  
83  
Watts  
(V = 26 Vdc, I = 800 mA, f = 1805 – 1880 MHz)  
DD  
DQ  
Output Mismatch Stress @ P1dB  
(V = 26 Vdc, I = 800 mA, f = 1805 MHz,  
VSWR = 5:1, All Phase Angles at Frequency of Tests)  
Ψ
No Degradation In Output Power  
Before and After Test  
DD  
DQ  
(1) Part is internally matched both on input and output.  
(2) To meet application requirements, Motorola test fixtures have been designed to cover the full GSM1800 band, ensuring batch–to–batch  
consistency.  
MRF18085A MRF18085AR3 MRF18085ALSR3  
2
MOTOROLA RF DEVICE DATA  
ꢏ ꢏ  
ꢁ ꢁ  
ꢋꢋ  
ꢊꢋ ꢒ  
ꢄꢅ ꢆꢇ ꢈ  
ꢌꢋ ꢑ  
C1, C3, C6, C7 10 pF Chip Capacitors, B Case, ATC  
Z4  
Z5  
Z6  
Z7  
Z8  
Z9  
Z10  
Z11  
Z12  
PCB  
0.610x 00.118Microstrip  
0.331x 1.153Microstrip  
0.063x 1.153Microstrip  
0.122x 0.925Microstrip  
0.547x 0.925Microstrip  
0.394x 0.177Microstrip  
0.180x 0.087Microstrip  
0.686x 0.087Microstrip  
0.294x 0.087Microstrip  
C2  
C4  
1.8 pF Chip Capacitor, B Case, ATC  
10 mF, 35 V Tantalum Capacitor, AVX  
1 nF Chip Capacitors, B Case, ATC  
220 mF, 63 V Electrolytic Capacitor, Radial, Philips  
0.3 pF Chip Capacitor, B Case, ATC  
10 kW, 1/4 W Chip Resistors (1206)  
1.0 kW, 1/4 W Chip Resistor (1206)  
0.671x 0.087Microstrip  
C5, C8  
C9  
C10  
R1, R2  
R3  
Z1  
Z2  
0.568x 0.087Microstrip  
Taconic TLX8, 0.8 mm Thickness  
“N” Type, Macom 3052–1648–10  
Z3  
0.500x 0.098Microstrip Shorted Stub  
Connectors  
Figure 1. 1.80 – 1.88 GHz Test Fixture Schematic  
ꢌꢖ  
ꢌꢋ ꢑ  
MRF18085A  
C–PP–02–01–2–Rev0  
Figure 2. 1.80 – 1.88 GHz Test Fixture Component Layout  
MOTOROLA RF DEVICE DATA  
MRF18085A MRF18085AR3 MRF18085ALSR3  
3
TYPICAL CHARACTERISTICS  
ꢩ ꢒꢓ ꢀꢧ ꢪ  
ꢩ ꢋꢖ ꢕꢑ ꢮ ꢯꢰ  
ꢏ ꢏ  
_
ꢖ ꢑꢑ ꢬ  
ꢒ ꢀ  
ꢩ ꢖ ꢑꢑ ꢬꢣ  
ꢩ ꢋ ꢖꢕ ꢑ ꢮꢯ ꢰ  
ꢏ ꢫ  
ꢋ ꢋ  
ꢏ ꢏ  
_  
ꢋ ꢑ ꢑꢑ  
ꢝꢞꢙ  
ꢇꢈ  
ꢠꢣꢈ  
ꢆ ꢟ ꢉ ꢇꢈꢆ ꢇꢈ ꢆ ꢉ ꢠꢡ ꢂ ꢢꢠꢣꢈꢈꢘ ꢤ  
ꢝ ꢞ ꢙ  
Figure 3. Power Gain versus Output Power  
Figure 4. Power Gain versus Output Power  
ꢱ ꢲ  
ꢩ ꢒꢓ ꢀ ꢧꢪ  
ꢏ ꢏ  
_  
ꢏ ꢫ  
ꢭ ꢩ ꢋꢖ ꢕꢑ ꢮ ꢯꢰ  
_
ꢖ ꢑ  
ꢓ ꢑ  
ꢕ ꢑ  
ꢒ ꢑ  
ꢩ ꢒ ꢓ ꢀ ꢧꢪ  
ꢩ ꢖ ꢑꢑ ꢬꢣ  
_
ꢏ ꢫ  
_  
ꢋ ꢋ  
ꢖꢑ  
ꢖꢒ  
ꢖꢖ  
ꢆ ꢟ ꢉ ꢇꢈꢆ ꢇꢈ ꢆ ꢉꢠꢡ ꢂ ꢢ ꢠꢣꢈꢈ ꢘꢤ  
ꢝꢞꢙ  
Figure 6. Output Power versus Frequency  
Figure 5. Power Gain versus Output Power  
ꢓ ꢑ  
ꢎ ꢑ  
ꢕ ꢑ  
ꢍ ꢑ  
ꢒ ꢑ  
ꢋ ꢑ  
ꢜ ꢥ  
ꢜ ꢥ  
ꢶ ꢍꢑ ꢠ  
ꢵ ꢕ  
ꢵ ꢖ  
ꢵ ꢋ  
ꢵ ꢋ  
ꢵ ꢒ  
ꢵ ꢒ  
ꢩ ꢒ ꢓ ꢀ ꢧꢪ  
ꢩ ꢖ ꢑꢑ ꢬꢣ  
ꢏ ꢏ  
ꢏ ꢫ  
ꢩ ꢋ ꢖꢕ ꢑ ꢮꢯ ꢰ  
ꢄꢂ ꢷ ꢶ ꢍꢑ ꢠ  
_  
ꢏ ꢏ  
ꢩ ꢖꢑ ꢑ ꢬ ꢣ  
ꢋ ꢋ  
η
ꢋꢋ  
ꢏ ꢫ  
_  
ꢎꢑ  
ꢆ ꢟ ꢉ ꢇꢈꢆ ꢇꢈ ꢆ ꢉ ꢠꢡ ꢂ ꢢꢠꢣꢈꢈꢘ ꢤ  
ꢝ ꢞ ꢙ  
Figure 7. Power Gain versus Frequency  
Figure 8. Power Gain and Efficiency versus  
Output Power  
MRF18085A MRF18085AR3 MRF18085ALSR3  
4
MOTOROLA RF DEVICE DATA  
ꢩ ꢋ Ω  
ꢗ ꢋꢑ ꢮ ꢯ  
ꢺꢝ ꢛ ꢧ  
ꢏ ꢏ  
ꢑꢑ  
ꢩ ꢖ ꢎ ꢠ ꢌꢠ  
ꢝ ꢞ ꢙ  
ꢏ ꢫ  
f
Z
Z
load  
source  
MHz  
1710  
1785  
1805  
1880  
1930  
1960  
1990  
1.13 + j3.62  
1.61 + j4.23  
1.69 + j4.34  
2.83 + j5.25  
3.00 + j5.18  
4.39 + j4.97  
6.59 + j4.74  
1.79 + j2.88  
1.82 + j3.15  
1.90 + j2.66  
2.09 + j2.77  
2.01 + j2.44  
2.01 + j2.57  
1.79 + j2.37  
Z
=
=
Test circuit impedance as measured from  
gate to ground.  
source  
Z
load  
Test circuit impedance as measured  
from drain to ground.  
ꢿꢱꢪꢹ  
ꢧ ꢹꢚ ꢙ  
ꢙ ꢪꢻꢱ ꢲꢼ  
ꢮ ꢱ  
ꢅꢹ ꢙ ꢽꢝ ꢚꢾ  
ꢮ ꢛ  
ꢅ ꢹꢙꢽ ꢝꢚ ꢾ  
Z
Z
source  
load  
Figure 9. Series Equivalent Input and Output Impedance  
MOTOROLA RF DEVICE DATA  
MRF18085A MRF18085AR3 MRF18085ALSR3  
5
NOTES  
MRF18085A MRF18085AR3 MRF18085ALSR3  
6
MOTOROLA RF DEVICE DATA  
PACKAGE DIMENSIONS  
B
G
2X  
Q
1
ꢈꢡ ꢘ ꣀ  
ꢳ ꢋꢕꢴ ꢎꢮꢵꢋ ꢐꢐꢕꢴ  
3
ꢒꢴ  
ꢍꢴ  
ꢕꢴ  
ꢡ ꢷꢡꢈ ꢡꢏ  
K
B
2
ꢡꢅ  
(FLANGE)  
D
INCHES  
DIM MIN MAX  
MILLIMETERS  
MIN MAX  
A
B
ꢍꢴ ꢐꢋ  
ꢐꢴ ꢓꢎ  
ꢍꢴ ꢋꢖ  
ꢒꢴ ꢎꢗ  
ꢑꢴ ꢖꢐ  
ꢑꢴ ꢑꢖ  
ꢕꢴ ꢋꢓ  
ꢐ ꢴꢐ ꢋ  
ꢕ ꢴꢍ ꢒ  
ꢒꢴ ꢖꢍ  
ꢋ ꢴꢋ ꢕ  
ꢑ ꢴꢋ ꢎ  
C
(LID)  
R
(INSULATOR)  
M
N
D
E
F
G
(INSULATOR)  
S
(LID)  
H
ꢑꢎ  
ꢋꢗ  
ꢗꢗ  
ꢗꢗ  
K
M
H
N
Q
ꢴ ꢋꢋ  
R
C
S
aaa  
bbb  
ccc  
ꢑꢴ ꢋ ꢒꢗ  
ꢑꢴ ꢒ ꢎꢕ  
ꢑꢴ ꢍ ꢖꢋ  
ꢡꢃ  
ꢡꢃ  
ꢡꢃ  
F
SEATING  
PLANE  
E
A
T
CASE 465–06  
ISSUE F  
ꢘ ꢈꢳ ꢷꢡ ꢋꣀ  
A
ꢄꢅ  
ꢏ ꢂ ꢣꢄ ꢅ  
ꢁ ꢣꢈ ꢡ  
ꢘ ꢉꢇ ꢂ ꢌ ꢡ  
(FLANGE)  
NI–780  
MRF18085A, MRF18085AR3  
4X U  
(FLANGE)  
ꢴ ꢏ ꢄ ꢮꢡꢅ ꢘ ꢄ ꢉꢅ ꢄ ꢅ ꢁ ꢣ ꢅ ꢏ ꢈꢉ ꢷꢡ ꢂ ꢣꢅ ꢌ ꢄ ꢅꢁ ꢆꢡ ꢂ ꢣꢅ ꢘ ꢄ  
4X Z  
B
(LID)  
1
ꢒꢴ  
ꢍꢴ  
ꢕꢴ  
ꢡ ꢷꢡꢈ ꢡꢏ  
ꢄꢅ  
ꢡꢅ  
ꢡꢏ  
ꢓꢒ  
ꢃ ꢂ ꢉꢮ ꢆꢣ ꢌ ꣁꢣ ꢁ ꢡ ꢨ ꢉꢏ ꢳꢴ  
INCHES  
DIM MIN MAX  
MILLIMETERS  
MIN MAX  
2X K  
2
A
B
ꢖꢑꢎ  
ꢍꢖꢑ  
ꢋꢒꢎ  
ꢕꢐꢎ  
ꢑꢍꢎ  
ꢑꢑꢍ  
ꢑꢎꢗ  
ꢋꢗꢑ  
ꢗꢗꢕ  
ꢗꢗꢒ  
ꢍꢓꢎ  
ꢍꢓꢎ  
ꢵꢵꢵ  
ꢵꢵꢵ  
ꢑꢴ ꢖꢋꢎ  
ꢑꢴ ꢍꢐꢑ  
ꢑꢴ ꢋꢗꢑ  
ꢑꢴ ꢎꢑꢎ  
ꢑꢴ ꢑꢕꢎ  
ꢑꢴ ꢑꢑꢓ  
ꢑꢴ ꢑꢓꢗ  
ꢑꢴ ꢒꢋꢑ  
ꢑꢴ ꢗꢖꢓ  
ꢑꢴ ꢗꢖꢖ  
ꢑꢴ ꢍꢗꢎ  
ꢑꢴ ꢍꢗꢎ  
ꢑꢴ ꢑꢕꢑ  
ꢑꢴ ꢑꢍꢑ  
ꢕꢎ  
ꢓꢎ  
ꢋꢖ  
ꢎꢗ  
ꢖꢐ  
ꢑꢖ  
ꢕꢎ  
ꢍꢒ  
ꢓꢋ  
ꢓꢋ  
ꢒꢗ  
ꢒꢗ  
ꢵꢵ  
ꢵꢵ  
ꢑꢴ ꢗꢑ  
ꢐ ꢴꢐ ꢋ  
ꢕ ꢴꢍ ꢒ  
ꢒꢴ ꢖꢍ  
ꢋ ꢴꢋ ꢕ  
ꢑ ꢴꢋ ꢎ  
ꢋ ꢴꢗ ꢑ  
ꢎ ꢴꢍ ꢍ  
ꢑꢴ ꢑꢒ  
ꢑꢴ ꢑꢒ  
ꢐ ꢴꢎ ꢍ  
ꢐ ꢴꢎ ꢒ  
ꢋ ꢴꢑ ꢒ  
ꢑ ꢴꢗ ꢓ  
B
(FLANGE)  
C
D
D
E
F
H
K
(LID)  
N
(LID)  
R
M
N
R
S
(INSULATOR)  
S
(INSULATOR)  
M
U
Z
aaa  
bbb  
ccc  
ꢑꢎ ꢦꢂ  
ꢋꢑ ꢦꢂ  
ꢋꢎ ꢦꢂ  
ꢡꢃ  
ꢡꢃ  
ꢡꢃ  
H
C
3
ꢋꢴ  
ꢒꢴ  
ꢎꢴ  
ꢏ ꢂ ꢣꢄ ꢅ  
ꢁ ꢣꢈ ꢡ  
ꢘ ꢉꢇ ꢂ ꢌ ꢡ  
F
SEATING  
PLANE  
E
A
T
CASE 465A–06  
ISSUE F  
A
(FLANGE)  
NI–780S  
MRF18085ALSR3  
MOTOROLA RF DEVICE DATA  
MRF18085A MRF18085AR3 MRF18085ALSR3  
7
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation, or guarantee regarding  
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and  
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different  
applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by  
customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended,  
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other  
application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola  
products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and  
distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal  
injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture  
of the part. Motorola and the Stylized M Logo are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.  
Motorola and the Stylized M Logo are registered in the US Patent & Trademark Office. All other product or service names are the property of their respective owners.  
E Motorola, Inc. 2002.  
How to reach us:  
USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447  
JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu. Minato–ku, Tokyo 106–8573 Japan. 81–3–3440–3569  
ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T. Hong Kong. 852–26668334  
Technical Information Center: 1–800–521–6274  
HOME PAGE: http://www.motorola.com/semiconductors  
MRF18085A/D  

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