MRF19060R3 [MOTOROLA]

RF POWER FIELD EFFECT TRANSISTORS; 射频功率场效应晶体管
MRF19060R3
型号: MRF19060R3
厂家: MOTOROLA    MOTOROLA
描述:

RF POWER FIELD EFFECT TRANSISTORS
射频功率场效应晶体管

晶体 射频场效应晶体管 功率场效应晶体管 CD 放大器 局域网
文件: 总8页 (文件大小:387K)
中文:  中文翻译
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ꢒ ꢓꢎ ꢓ ꢀꢓ ꢔꢕ  
SEMICONDUCTOR TECHNICAL DATA  
Order this document  
by MRF19060/D  
The RF MOSFET Line  
ꢀ ꢁ ꢂ ꢃꢄꢅ ꢆ ꢁꢇꢅ ꢈꢉ ꢊ ꢋꢋ ꢅ ꢌꢍ ꢎꢆ ꢏꢐ ꢑ ꢇꢑ ꢍꢃ ꢆ ꢑ  
N–Channel Enhancement–Mode Lateral MOSFETs  
Designed for PCN and PCS base station applications with frequencies from  
1.9 to 2.0 GHz. Suitable for CDMA, TDMA, GSM and multicarrier amplifier  
applications.  
ꢒꢀ ꢁ ꢖꢗꢘ ꢙꢘ  
Typical CDMA Performance: 1960 MHz, 26 Volts  
IS–97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13  
Output Power — 7.5 Watts  
1990 MHz, 60 W, 26 V  
LATERAL N–CHANNEL  
RF POWER MOSFETs  
Power Gain — 12.5 dB  
Adjacent Channel Power —  
885 kHz: –47 dBc @ 30 kHz BW  
1.25 MHz: –55 dBc @ 12.5 kHz BW  
2.25 MHz: –55 dBc @ 1 MHz BW  
Internally Matched, Controlled Q, for Ease of Use  
High Gain, High Efficiency and High Linearity  
Integrated ESD Protection  
Designed for Maximum Gain and Insertion Phase Flatness  
Capable of Handling 10:1 VSWR, @ 26 Vdc, 1.93 GHz, 60 Watts CW  
CASE 465–06, STYLE 1  
NI–780  
Output Power  
Excellent Thermal Stability  
Characterized with Series Equivalent Large–Signal Impedance Parameters  
MRF19060R3  
Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch  
Reel.  
CASE 465A–06, STYLE 1  
NI–780S  
MRF19060SR3  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
65  
Unit  
Vdc  
Vdc  
Drain–Source Voltage  
Gate–Source Voltage  
V
DSS  
V
GS  
–0.5, +15  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
180  
1.03  
Watts  
W/°C  
C
Storage Temperature Range  
Operating Junction Temperature  
T
–65 to +150  
200  
°C  
°C  
stg  
T
J
ESD PROTECTION CHARACTERISTICS  
Test Conditions  
Class  
Human Body Model  
Machine Model  
1 (Minimum)  
M3 (Minimum)  
THERMAL CHARACTERISTICS  
Characteristic  
Thermal Resistance, Junction to Case  
Symbol  
Max  
Unit  
R
0.97  
°C/W  
θ
JC  
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and  
packaging MOS devices should be observed.  
REV 5  
Motorola, Inc. 2002  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
C
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Drain–Source Breakdown Voltage  
V
65  
6
Vdc  
µAdc  
µAdc  
(BR)DSS  
(V = 0 Vdc, I = 10 µAdc)  
GS  
D
Zero Gate Voltage Drain Current  
(V = 26 Vdc, V = 0 Vdc)  
I
DSS  
DS  
GS  
Gate–Source Leakage Current  
(V = 5 Vdc, V = 0 Vdc)  
I
1
GSS  
GS  
DS  
ON CHARACTERISTICS  
Forward Transconductance  
g
2
4.7  
4
S
V
V
V
fs  
(V = 10 Vdc, I = 2 Adc)  
DS  
D
Gate Threshold Voltage  
VGS  
(th)  
GS(Q)  
DS(on)  
(V = 10 Vdc, I = 300 µAdc)  
DS  
D
Gate Quiescent Voltage  
(V = 26 Vdc, I = 500 mAdc)  
V
2.5  
3.9  
0.27  
4.5  
DS  
D
Drain–Source On–Voltage  
(V = 10 Vdc, I = 2 Adc)  
V
GS  
D
DYNAMIC CHARACTERISTICS  
Reverse Transfer Capacitance (1)  
C
2.7  
pF  
rss  
(V = 26 Vdc, V = 0, f = 1 MHz)  
DS  
GS  
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system)  
Two–Tone Common–Source Amplifier Power Gain  
G
11  
33  
12.5  
36  
dB  
%
ps  
(V = 26 Vdc, P = 60 W PEP, I = 500 mA,  
DD  
out  
DQ  
f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz)  
Two–Tone Drain Efficiency  
η
(V = 26 Vdc, P = 60 W PEP, I = 500 mA,  
DD  
out  
DQ  
f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz)  
3rd Order Intermodulation Distortion  
IMD  
IRL  
–31  
–12  
60  
–28  
dBc  
dB  
W
(V = 26 Vdc, P = 60 W PEP, I = 500 mA,  
DD  
out  
DQ  
f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz)  
Input Return Loss  
(V = 26 Vdc, P = 60 W PEP, I = 500 mA,  
DD  
out  
DQ  
f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz)  
P
out  
, 1 dB Compression Point  
P1dB  
(V = 26 Vdc, P = 60 W CW, f = 1990 MHz)  
DD  
out  
Output Mismatch Stress  
(V = 26 Vdc, P = 60 W CW, I = 500 mA,  
f = 1930 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests)  
Ψ
No Degradation In Output Power  
Before and After Test  
DD  
out  
DQ  
(1) Part is internally matched both on input and output.  
MRF19060 MRF19060R3 MRF19060SR3  
2
MOTOROLA RF DEVICE DATA  
ꢀꢑ  
ꢘ ꢊ  
ꢒ ꢒ  
ꢌ ꢌ  
ꢀꢉ  
ꢘ ꢐ  
ꢀ ꢊ  
ꢍ ꢉ  
ꢍꢊ  
ꢍ ꢐ  
ꢍꢑ  
ꢍꢔ  
ꢍꢗ  
ꢍꢖ  
ꢀ ꢁ  
ꢇ ꢅ ꢆꢄꢅ ꢆ  
ꢀ ꢁ  
ꢂꢃ ꢄꢅ ꢆ  
B2 – B3  
C1  
C2, C7  
C3, C8  
C4  
C5  
C6  
C9  
C10, C11  
C12  
R1  
R2  
R3  
R4  
Z1  
Z2  
Ferrite Beads, Fair Rite, 2743019447  
Z4  
Z5  
Z6  
Z7  
Z8  
Z9  
Z10  
Z11  
Z12  
Z13  
Z14  
Z15  
Z16  
Z17  
Z18  
Board  
0.152x 0.140Microstrip  
0.090x 0.102Microstrip  
0.245x 0.217Microstrip  
0.090x 0.737Microstrip  
0.530x 0.941Microstrip  
1.010x 0.050Microstrip  
1.060x 0.050Microstrip  
0.446x 1.137Microstrip  
0.152x 0.567Microstrip  
0.183x 0.220Microstrip  
0.100x 0.338Microstrip  
0.480x 0.142Microstrip  
0.140x 0.080Microstrip  
0.173x 0.080Microstrip  
0.420x 0.080Microstrip  
10 µF, 50 V Electrolytic Capacitor, Panasonic #ECEV1HV100R  
1000 pF Chip Capacitors, B Case, ATC #100B102JCA500X  
0.10 µF Chip Capacitors, B Case, Kemet #CDR33BX104AKWS  
5.1 pF Chip Capacitor, B Case, ATC #100B5R1JCA500X  
6.2 pF Chip Capacitor, B Case, ATC #100B6R2JCA500X  
22 µF, 35 V Tantalum Capacitor, SMT, Sprague  
0.8 pF – 8.0 pF Variable Capacitor, Johanson Gigatrim  
10 pF Chip Capacitors, B Case, ATC #100B100JCA500X  
0.4 pF – 2.5 pF Variable Capacitor, Johanson Gigatrim  
1 k, 1/4 W Fixed Film Chip Resistor, 0.08x 0.13″  
560 k, 1/4 W Fixed Film Chip Resistor, 0.08x 0.13″  
15 , 1/4 W Fixed Film Chip Resistor, 0.08x 0.13″  
10 , 1/4 W Fixed Film Chip Resistor, 0.08x 0.13″  
0.580x 0.074Microstrip  
0.100x 0.074Microstrip  
0.030Glass Teflon Arlon  
Z3  
0.384x 0.074Microstrip  
GX–0300–55–22, 2 oz Cu  
Figure 1. MRF19060 Test Circuit Schematic  
MOTOROLA RF DEVICE DATA  
MRF19060 MRF19060R3 MRF19060SR3  
3
ꢆꢇ ꢒ ꢀꢙ ꢂꢃ  
ꢘ ꢂ ꢙꢛ  
ꢁꢚꢚ ꢒꢆ ꢜꢀ ꢅ  
ꢆꢇ ꢌ ꢙꢆ ꢚ  
ꢘꢂꢙꢛ  
ꢁꢚꢚ ꢒ ꢆꢜ ꢀ ꢅ  
ꢍꢔ  
ꢍꢗ  
ꢘ ꢊ  
ꢘ ꢐ  
ꢍꢓ  
ꢍ ꢉ ꢀ ꢉ  
ꢀꢑ  
ꢍꢊ ꢀ ꢊ  
ꢍꢐ  
ꢍ ꢑ  
ꢍꢖ  
ꢍꢕ  
ꢍꢉ ꢊ  
ꢍꢉ ꢎ  
ꢍꢉꢉ  
MRF19060  
Figure 2. MRF19060 Test Circuit Component Layout  
MRF19060 MRF19060R3 MRF19060SR3  
4
MOTOROLA RF DEVICE DATA  
TYPICAL CHARACTERISTICS  
ꢑ ꢎ  
ꢐ ꢔ  
ꢐ ꢎ  
ꢊ ꢔ  
ꢊ ꢎ  
ꢉ ꢔ  
ꢉ ꢎ  
ꢳꢊ ꢎ  
ꢳꢐ ꢎ  
ꢳꢑ ꢎ  
ꢳꢔ ꢎ  
ꢳꢗ ꢎ  
ꢳꢖ ꢎ  
ꢳꢓ ꢎ  
ꢳꢕ ꢎ  
ꢳꢉ ꢎ ꢎ  
ꢑ ꢔ  
ꢑ ꢎ  
ꢐ ꢔ  
ꢐ ꢎ  
ꢊ ꢔ  
ꢊ ꢎ  
ꢉ ꢔ  
ꢉ ꢎ  
ꢴ ꢊ ꢗ ꢋ ꢦꢵ  
ꢴ ꢖ ꢎꢎ ꢶꢙ ꢝ ꢩ ꢴ ꢉ ꢕꢗ ꢎ ꢫꢜ ꢬꢝ ꢍꢾ ꢺ ꢸꢸ ꢹ ꢿ ꢛ ꢣꢺ ꢵꢽꢸ ꢱ  
ꢒ ꢒ  
η
ꢳ ꢔ  
ꢒ ꢪ  
ꢠꢍ ꢾꢺ ꢸ ꢸꢹ ꢿ ꢘ ꢺꢸ ꢦ ꢷꢽꢦ ꢯ ꢾ ꢢꣀ ꢓ ꢓꢔ ꢼꢜꢬ ꢠꢐ ꢎ ꢼꢜꢬꢢ ꢝ  
ꢉ ꢲꢊ ꢔ ꢫꢜ ꢬ ꢠꢉ ꢊ ꢲ ꢔ ꢼꢜꢬꢢ ꢝ ꢊ ꢲꢊ ꢔ ꢫꢜ ꢬ ꢠꢉ ꢫꢜ ꢬꢢ  
ꢳ ꢉ ꢎ  
ꢳ ꢉ ꢔ  
ꢳ ꢊ ꢎ  
ꢳ ꢊ ꢔ  
ꢳ ꢐ ꢎ  
ꢳ ꢐ ꢔ  
ꢳ ꢑ ꢎ  
ꢂ ꢀꢨ  
ꢊ ꢲꢊ ꢔ ꢫꢜ ꢬ  
ꢴ ꢊ ꢗ ꢋꢦ ꢵ  
ꢴ ꢗ ꢎ ꢥ ꢠ ꢄꢚ ꢄꢢ ꢝ ꢂ ꢴ ꢔꢎ ꢎ ꢶ ꢙ  
ꢒ ꢒ  
ꢭꢮ ꢯ  
η
ꢓ ꢓꢔ ꢼꢜꢬ  
ꢆꢷ ꢭ ꢳꢆꢭ ꢸꢹ ꢫꢹ ꢺ ꢤꢮꢻ ꢹ ꢶꢹ ꢸꢯ ꢝ ꢉꢎ ꢎ ꢼꢜ ꢬ ꢆꢭꢸ ꢹ ꢛ ꢣꢺꢵꢽ ꢸꢱ  
ꢉ ꢲꢊ ꢔ ꢫꢜ ꢬ  
ꢣ ꢤ  
ꢣ ꢤ  
ꢍꢒ ꢫꢙ ꢕ ꢍꢾ ꢺ ꢸꢸ ꢹ ꢿꢤ ꢁꢭ ꢻꢷꢺ ꢻ ꢦ  
ꢄ ꢽꢿꢭ ꢯ ꣀ ꢎꢝ ꢄ ꢺꢱ ꢽꢸ ꢱ ꣀ ꢉꢝ ꢆꢻꢺ ꢩꢩ ꢽꢵꣀ ꢓ ꢳ ꢉꢐ ꢝ ꢛ ꣁꢸꢵ ꣀꢐ ꢊ  
ꢉ ꢕꢎ ꢎ  
ꢉ ꢊ  
ꢄ ꢝ ꢇ ꢅꢆꢄ ꢅꢆ ꢄ ꢇ ꢥꢚ ꢀ ꢠꢥꢙꢆꢆꢛ ꢙꢰꢱ ꢲ ꢢ ꢍꢒ ꢫꢙ  
ꢭ ꢮ ꢯ  
Figure 3. Class AB Broadband Circuit Performance  
Figure 4. CDMA ACPR, Power Gain and  
Drain Efficiency versus Output Power  
ꢳ ꢊꢔ  
ꢳ ꢐꢎ  
ꢳꢐ ꢔ  
ꢳ ꢑꢎ  
ꢳꢑ ꢔ  
ꢳ ꢔꢎ  
ꢳꢔ ꢔ  
ꢳ ꢗꢎ  
ꢳ ꢗꢔ  
ꢳ ꢊ ꢎ  
ꢳ ꢐ ꢎ  
ꢳ ꢑ ꢎ  
ꢳ ꢔ ꢎ  
ꢳ ꢗ ꢎ  
ꢴ ꢊ ꢗ ꢋꢦ ꢵ  
ꢩ ꢴ ꢉ ꢕꢗ ꢎ ꢫꢜ ꢬ  
ꢴ ꢊ ꢗ ꢋ ꢦꢵ  
ꢴ ꢖ ꢎꢎ ꢶꢙ ꢝ ꢩ ꢴ ꢉ ꢕꢗ ꢎ ꢫꢜ ꢬ  
ꢒ ꢪ  
ꢆꢷꢭ ꢳ ꢆꢭ ꢸꢹ ꢫꢹ ꢺ ꢤꢮꢻ ꢹ ꢶꢹ ꢸꢯ ꢝ ꢉ ꢎꢎ ꢼꢜꢬ ꢆꢭ ꢸꢹ ꢛ ꢣꢺ ꢵꢽ ꢸꢱ  
ꢳ ꢖ ꢎ  
ꢳ ꢓ ꢎ  
ꢉ ꢲꢎ  
ꢄ ꢝ ꢇ ꢅꢆꢄ ꢅꢆ ꢄ ꢇ ꢥꢚ ꢀ ꢠꢥꢙꢆꢆꢛ ꢢ ꢄ ꢚ ꢄ  
ꢭ ꢮ ꢯ  
Figure 5. Intermodulation Distortion  
versus Output Power  
Figure 6. Intermodulation Products  
versus Output Power  
ꢳꢊ ꢊ  
ꢉ ꢑ  
ꢉ ꢐ  
ꢉ ꢊ  
ꢉ ꢉ  
ꢉ ꢎ  
ꢉ ꢐꢲ ꢔ  
ꢉ ꢐ  
ꢭ ꢮ ꢯ  
ꢩ ꢴ ꢉ ꢕꢗ ꢎ ꢫꢜ ꢬ  
ꢴ ꢗ ꢎ ꢥ ꢠꢄ ꢚ ꢄ ꢢꢝ ꢂ ꢴ ꢔ ꢎꢎ ꢶꢙ  
ꢒ ꢪ  
ꢕ ꢎꢎ ꢶ ꢙ  
ꢖ ꢎꢎ ꢶ ꢙ  
ꢳꢊ ꢑ  
ꢳꢊ ꢗ  
ꢳꢊ ꢓ  
ꢳꢐ ꢎ  
ꢳꢐ ꢊ  
ꢳꢐ ꢑ  
ꢳꢐ ꢗ  
ꢳꢐ ꢓ  
ꢣ ꢤ  
ꢉ ꢊꢲ ꢔ  
ꢉ ꢊ  
ꢒ ꢒ  
ꢴ ꢊ ꢗ ꢋꢦꢵ  
ꢩ ꢴ ꢉ ꢕꢗ ꢎ ꢫꢜ ꢬ  
ꢉꢉ ꢲꢔ  
ꢎ ꢲꢉ  
ꢉꢲ ꢎ  
ꢉꢎ  
ꢉ ꢎꢎ  
ꢊ ꢊ  
ꢊ ꢑ  
ꢊ ꢗ  
ꢋ ꢝ ꢒꢀꢙ ꢂ ꢃ ꢋ ꢇ ꢨꢆꢙ ꢌ ꢚ ꢠꢋ ꢇ ꢨꢆꢛ ꢢ  
ꢒ ꢒ  
ꢊ ꢓ  
ꢐ ꢎ  
ꢐ ꢊ  
ꢄ ꢝ ꢇ ꢅꢆ ꢄꢅ ꢆ ꢄ ꢇꢥꢚ ꢀ ꢠ ꢥꢙꢆꢆ ꢛꢢ ꢄ ꢚꢄ  
ꢭꢮ ꢯ  
Figure 7. Power Gain versus Output Power  
Figure 8. Power Gain and  
Intermodulation Distortion versus Supply Voltage  
MOTOROLA RF DEVICE DATA  
MRF19060 MRF19060R3 MRF19060SR3  
5
ꢩ ꢴ ꢉ ꢕꢐ ꢎ ꢫꢜ ꢬ  
ꢈ ꢴ Ω  
ꢉ ꢕꢕ ꢎ ꢫꢜ ꢬ  
ꢩ ꢴ ꢉ ꢕꢐ ꢎ ꢫꢜ ꢬ  
ꢇ ꢨ  
ꢉ ꢕꢕ ꢎ ꢫꢜ ꢬ  
ꢒ ꢒ  
ꢴ ꢊꢗ ꢋꢝ ꢂ ꢴ ꢔ ꢎꢎ ꢶꢙ ꢝ ꢄ ꢴ ꢗ ꢎ ꢥ ꢄ ꢚ ꢄ  
ꢒ ꢪ ꢭ ꢮ ꢯ  
f
Z
in  
Z
OL  
*
MHz  
1930  
1960  
1990  
1.65 + j0.67  
1.64 + j0.45  
1.60 + j0.20  
1.85 – j0.50  
1.89 – j0.74  
1.96 – j0.94  
Z
Z
= Complex conjugate of source impedance.  
in  
* = Complex conjugate of the optimum load  
impedance at a given output power, voltage,  
IMD, bias current and frequency.  
OL  
ꢈ ꣂ ꢷꢺ ꢤ ꢵꢾꢭ ꢤꢹ ꢸ ꣃ ꢺꢤꢹ ꢦ ꢭ ꢸ ꢯ ꢻꢺ ꢦ ꢹꢭ ꢩꢩ ꢤ ꣃ ꢹꢯ ꢷꢹ ꢹ ꢸ ꢱ ꢺꢽ ꢸꢝ ꢭ ꢮꢯ ꢣ ꢮ ꢯ  
ꢇ ꢨ  
ꢣꢭ ꢷꢹꢻꢝ ꢦꢻ ꢺ ꢽꢸ ꢹ ꢩꢩ ꢽꢵꢽ ꢹꢸ ꢵꣁ ꢺ ꢸꢦ ꢽꢸ ꢯ ꢹ ꢻꢶꢭ ꢦ ꢮꢿ ꢺꢯ ꢽ ꢭꢸ ꢦ ꢽꢤꢯ ꢭ ꢻꢯ ꢽꢭ ꢸ ꢲ  
ꢇ ꢮ ꢯꢣ ꢮ ꢯ  
ꢫꢺ ꢯ ꢵꢾ ꢽꢸ ꢱ  
ꢃꢹ ꢯ ꢷꢭ ꢻꢼ  
ꢂ ꢸꢣꢮ ꢯ  
ꢫ ꢺꢯ ꢵꢾꢽ ꢸꢱ  
ꢃꢹ ꢯ ꢷꢭꢻ ꢼ  
ꢒꢹ ꢰꢽꢵꢹ  
ꢅꢸ ꢦ ꢹꢻ ꢯ  
Z
Z
*
in  
OL  
Figure 9. Series Equivalent Input and Output Impedance  
MRF19060 MRF19060R3 MRF19060SR3  
MOTOROLA RF DEVICE DATA  
6
PACKAGE DIMENSIONS  
B
G
2X  
Q
ꢃ ꢇ ꢆꢚ ꢛ ꣀ  
ꢉꢲ ꢒ ꢂ ꢫꢚꢃ ꢛ ꢂꢇ ꢃ ꢂ ꢃ ꢌ ꢙ ꢃꢒ ꢆꢇ ꢨꢚ ꢀ ꢙꢃ ꢍ ꢂꢃ ꢌ ꢄꢚ ꢀ ꢙꢃ ꢛ ꢂ  
ꢟ ꢉꢑꢲ ꢔꢫꢳꢉ ꢕꢕꢑꢲ  
1
ꣃ ꣃꣃ  
ꢆ ꢙ  
ꢊꢲ ꢍ ꢇ ꢃ ꢆꢀ ꢇ ꢨꢨ ꢂꢃ ꢌ ꢒ ꢂ ꢫꢚꢃ ꢛ ꢂꢇ ꢃ ꣀ ꢂ ꢃ ꢍꢜ ꢲ  
ꢐꢲ ꢒ ꢚ ꢨꢚꢆ ꢚꢒ  
ꢑꢲ ꢒ ꢂ ꢫꢚꢃ ꢛ ꢂꢇ ꢃ ꢜ ꢂ ꢛ ꢫꢚ ꢙꢛ ꢅ ꢀ ꢚꢒ ꢎꢲꢎ ꢐ ꢎ ꢠꢎ ꢲꢖ ꢗꢊ ꢢ ꢙꢥ ꢙꢟ  
ꢁ ꢀ ꢇꢫ ꢄꢙ ꢍ ꣄ꢙ ꢌ ꢚ ꢘ ꢇꢒ ꢟꢲ  
3
K
B
INCHES  
DIM MIN MAX  
MILLIMETERS  
2
(FLANGE)  
MIN  
ꢐꢐꢲ ꢕꢉ  
ꢕꢲ ꢗꢔ  
MAX  
ꢐ ꢑꢲ ꢉꢗ  
ꢕ ꢲꢕ ꢉ  
A
B
ꢉꢲ ꢐꢐꢔ  
ꢎꢲ ꢐꢓꢎ  
ꢎꢲ ꢉꢊꢔ  
ꢎꢲ ꢑꢕꢔ  
ꢎꢲ ꢎꢐꢔ  
ꢎꢲ ꢎꢎꢐ  
ꢉꢲ ꢐꢑꢔ  
ꢎꢲ ꢐꢕꢎ  
ꢎꢲ ꢉꢖꢎ  
ꢎꢲ ꢔꢎꢔ  
ꢎꢲ ꢎꢑꢔ  
ꢎꢲ ꢎꢎꢗ  
D
C
ꢐꢲ ꢉꢓ  
ꣃꣃ ꣃ  
ꢆ ꢙ  
D
ꢉꢊꢲ ꢔꢖ  
ꢎꢲ ꢓꢕ  
ꢎꢲ ꢎꢓ  
ꢉ ꢊꢲ ꢓꢐ  
ꢉ ꢲꢉ ꢑ  
ꢎ ꢲꢉ ꢔ  
E
F
(LID)  
R
(INSULATOR)  
M
N
G
H
ꢎꢲ ꢎꢔꢖ  
ꢎꢲ ꢉꢖꢎ  
ꢎꢲ ꢖꢖꢑ  
ꢎꢲ ꢖꢖꢊ  
ꢲ ꢉꢉꢓ  
ꢎꢲ ꢎꢗꢖ  
ꢎꢲ ꢊꢉꢎ  
ꢎꢲ ꢖꢓꢗ  
ꢎꢲ ꢖꢓꢓ  
ꢲ ꢉꢐꢓ  
ꢉꢲ ꢑꢔ  
ꢑꢲ ꢐꢊ  
ꢉ ꢲꢖ ꢎ  
ꢔ ꢲꢐ ꢐ  
ꢆ ꢙ  
ꢆ ꢙ  
K
M
ꢉꢕꢲ ꢗꢗ  
ꢉꢕꢲ ꢗꢎ  
ꢐꢲ ꢎꢎ  
ꢉ ꢕꢲ ꢕꢗ  
ꢊ ꢎꢲ ꢎꢎ  
ꢐ ꢲꢔ ꢉ  
(INSULATOR)  
S
(LID)  
N
Q
R
ꢎꢲ ꢐꢗꢔ  
ꢎꢲ ꢐꢗꢔ  
ꢎꢲ ꢐꢖꢔ  
ꢎꢲ ꢐꢖꢔ  
ꢕꢲ ꢊꢖ  
ꢕꢲ ꢊꢖ  
ꢕ ꢲꢔ ꢐ  
ꢕ ꢲꢔ ꢊ  
H
S
aaa  
bbb  
ccc  
ꢎꢲ ꢎꢎꢔ ꢞꢀ ꢚ ꢁ  
ꢎꢲ ꢎꢉꢎ ꢞꢀ ꢚ ꢁ  
ꢎꢲ ꢎꢉꢔ ꢞꢀ ꢚ ꢁ  
ꢎꢲ ꢉꢊ ꢖꢞ ꢀ ꢚꢁ  
ꢎꢲ ꢊ ꢔꢑ ꢞꢀ ꢚꢁ  
ꢎꢲ ꢐꢓ ꢉꢞ ꢀ ꢚꢁ  
C
F
ꢄ ꢂꢃ ꢉꢲ ꢒ ꢀ ꢙꢂ ꢃ  
ꢊꢲ ꢌ ꢙꢆ ꢚ  
ꢐꢲ ꢛ ꢇꢅ ꢀ ꢍ ꢚ  
SEATING  
PLANE  
E
A
CASE 465–06  
ISSUE F  
T
A
(FLANGE)  
NI–780  
MRF19060  
4X U  
(FLANGE)  
ꢃ ꢇ ꢆꢚ ꢛ ꣀ  
ꢉꢲ ꢒ ꢂ ꢫꢚꢃ ꢛ ꢂꢇ ꢃ ꢂ ꢃ ꢌ ꢙ ꢃꢒ ꢆꢇ ꢨꢚ ꢀ ꢙꢃ ꢍ ꢂꢃ ꢌ ꢄꢚ ꢀ ꢙꢃ ꢛ ꢂ  
ꢟ ꢉꢑꢲ ꢔꢫꢳꢉ ꢕꢕꢑꢲ  
ꢊꢲ ꢍ ꢇ ꢃ ꢆꢀ ꢇ ꢨꢨ ꢂꢃ ꢌ ꢒ ꢂ ꢫꢚꢃ ꢛ ꢂꢇ ꢃ ꣀ ꢂ ꢃ ꢍꢜ ꢲ  
ꢐꢲ ꢒ ꢚ ꢨꢚꢆ ꢚꢒ  
4X Z  
(LID)  
B
1
ꢑꢲ ꢒ ꢂ ꢫꢚꢃ ꢛ ꢂꢇ ꢃ ꢜ ꢂ ꢛ ꢫꢚ ꢙꢛ ꢅ ꢀ ꢚꢒ ꢎꢲ ꢎꢐ ꢎ ꢠꢎ ꢲꢖ ꢗꢊ ꢢ ꢙꢥ ꢙꢟ  
ꢁ ꢀ ꢇꢫ ꢄꢙ ꢍ ꣄ꢙ ꢌ ꢚ ꢘ ꢇꢒ ꢟꢲ  
INCHES  
DIM MIN MAX  
MILLIMETERS  
MIN  
ꢊꢎꢲ ꢑꢔ  
ꢕꢲ ꢗꢔ  
ꢐꢲ ꢉꢓ  
ꢉꢊꢲ ꢔꢖ  
ꢎꢲ ꢓꢕ  
ꢎꢲ ꢎꢓ  
ꢉꢲ ꢑꢔ  
ꢑꢲ ꢐꢊ  
ꢉꢕꢲ ꢗꢉ  
ꢉꢕꢲ ꢗꢉ  
ꢕꢲ ꢊꢖ  
ꢕꢲ ꢊꢖ  
ꢳꢳꢳ  
MAX  
ꢊ ꢎꢲ ꢖꢎ  
ꢕ ꢲꢕ ꢉ  
ꢑ ꢲꢐ ꢊ  
ꢉ ꢊꢲ ꢓꢐ  
ꢉ ꢲꢉ ꢑ  
ꢎ ꢲꢉ ꢔ  
ꢉ ꢲꢖ ꢎ  
ꢔ ꢲꢐ ꢐ  
ꢊ ꢎꢲ ꢎꢊ  
ꢊ ꢎꢲ ꢎꢊ  
ꢕ ꢲꢔ ꢐ  
ꢕ ꢲꢔ ꢊ  
ꢉ ꢲꢎ ꢊ  
ꢎ ꢲꢖ ꢗ  
A
B
ꢎꢲ ꢓꢎꢔ  
ꢎꢲ ꢐꢓꢎ  
ꢎꢲ ꢉꢊꢔ  
ꢎꢲ ꢑꢕꢔ  
ꢎꢲ ꢎꢐꢔ  
ꢎꢲ ꢎꢎꢐ  
ꢎꢲ ꢎꢔꢖ  
ꢎꢲ ꢉꢖꢎ  
ꢎꢲ ꢖꢖꢑ  
ꢎꢲ ꢖꢖꢊ  
ꢎꢲ ꢐꢗꢔ  
ꢎꢲ ꢐꢗꢔ  
ꢳꢳꢳ  
ꢎꢲ ꢓꢉꢔ  
ꢎꢲ ꢐꢕꢎ  
ꢎꢲ ꢉꢖꢎ  
ꢎꢲ ꢔꢎꢔ  
ꢎꢲ ꢎꢑꢔ  
ꢎꢲ ꢎꢎꢗ  
ꢎꢲ ꢎꢗꢖ  
ꢎꢲ ꢊꢉꢎ  
ꢎꢲ ꢖꢓꢗ  
ꢎꢲ ꢖꢓꢓ  
ꢎꢲ ꢐꢖꢔ  
ꢎꢲ ꢐꢖꢔ  
ꢎꢲ ꢎꢑꢎ  
ꢎꢲ ꢎꢐꢎ  
2X K  
2
B
(FLANGE)  
C
D
D
E
F
H
K
M
N
R
(LID)  
N
(LID)  
R
S
U
ꢆ ꢙ  
ꢆ ꢙ  
Z
(INSULATOR)  
S
aaa  
bbb  
ccc  
ꢎꢲ ꢎꢎꢔ ꢞꢀ ꢚ ꢁ  
ꢎꢲ ꢎꢉꢎ ꢞꢀ ꢚ ꢁ  
ꢎꢲ ꢎꢉꢔ ꢞꢀ ꢚ ꢁ  
ꢎꢲ ꢉ ꢊꢖ ꢞꢀ ꢚꢁ  
ꢎꢲ ꢊ ꢔꢑ ꢞꢀ ꢚꢁ  
ꢎꢲ ꢐ ꢓꢉ ꢞꢀ ꢚꢁ  
(INSULATOR)  
M
ꢆ ꢙ  
H
ꢄ ꢂꢃ ꢉꢲ ꢒ ꢀ ꢙꢂ ꢃ  
ꢊꢲ ꢌ ꢙꢆ ꢚ  
ꢔꢲ ꢛ ꢇꢅ ꢀ ꢍ ꢚ  
C
3
F
SEATING  
PLANE  
E
A
CASE 465A–06  
ISSUE F  
T
A
(FLANGE)  
NI–780S  
MRF19060SR3  
MOTOROLA RF DEVICE DATA  
MRF19060 MRF19060R3 MRF19060SR3  
7
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding  
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and  
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola  
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”  
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of  
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other  
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury  
or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola  
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees  
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that  
Motorola was negligent regarding the design or manufacture of the part. Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.  
MOTOROLA and the  
logo are registered in the US Patent & Trademark Office. All other product or service names are the property of their respective owners.  
E Motorola, Inc. 2002.  
How to reach us:  
USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447  
JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu. Minato–ku, Tokyo 106–8573 Japan. 81–3–3440–3569  
ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 852–26668334  
Technical Information Center: 1–800–521–6274  
HOME PAGE: http://www.motorola.com/semiconductors/  
MRF19060/D  

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