MRFIC1817R2 [MOTOROLA]
Narrow Band Medium Power Amplifier, 1710MHz Min, 1900MHz Max, GAAS, PLASTIC, CASE 978-03, PFP, 16 PIN;型号: | MRFIC1817R2 |
厂家: | MOTOROLA |
描述: | Narrow Band Medium Power Amplifier, 1710MHz Min, 1900MHz Max, GAAS, PLASTIC, CASE 978-03, PFP, 16 PIN 射频 微波 |
文件: | 总8页 (文件大小:232K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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by MRFIC1817/D
SEMICONDUCTOR TECHNICAL DATA
The MRFIC Line
Designed specifically for application in Pan European digital 1.0 watt
DCS1800/PCS1900 handheld radios, the MRFIC1817 is specified for 32 dBm
output power with power gain over 27 dB from a 3.6 volt supply. To achieve this
superior performance, Motorola’s planar GaAs MESFET process is employed.
The device is packaged in the PFP–16 Power Flat Package which gives
excellent thermal and electrical performance through a solderable backside
contact while allowing the convenience and cost benefits of reflow soldering.
1700–1900 MHz MMIC
DCS1800/PCS1900
INTEGRATED POWER AMPLIFIER
GaAs MONOLITHIC
INTEGRATED CIRCUIT
•
Minimum Output Power Capabilities
32 dBm @ 3.6 Volts
30 dBm @ 3.0 Volts
•
Typical Volt Characteristics
RF Input Power = 5.0 dBm
RF Output Power = 33.5 dBm
Typical PAE = 42%
•
•
•
Low Current required from Negative Supply – 2 mA max
Guaranteed Stability and Ruggedness
CASE 978–02
(PFP–16)
Order MRFIC1817R2 for Tape and Reel.
R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel.
•
Device Marking = M1817
ABSOLUTE MAXIMUM RATINGS (T = 25°C, Z = 50 Ω, unless otherwise noted)
A
O
Rating
Symbol
Value
Unit
Vdc
Vdc
dBm
dBm
°C
DC Positive Supply Voltage
DC Negative Supply Voltage
RF Input Power
V
6
D1, 2, 3
V
SS
–5
10
P
in
RF Output Power
P
out
35
Operating Case Temperature Range
Storage Temperature Range
T
C
–35 to +85
–55 to +150
10
T
stg
°C
Thermal Resistance, Junction to Case
R
°C/W
θJC
8
V
GND
9
G
V
10
D2
7
6
V
D3
V
RF OUT
RF OUT
11
12
D2
V
5
4
D1
N/C 13
GND 14
RF OUT
3
2
RF OUT
N/C
15
RF IN
N/C 16
1
GND
Pin Connections and Functional Block Diagram
Motorola, Inc. 1997
RECOMMENDED OPERATING RANGES
Parameter
Symbol
Value
2.7 to 5
Unit
Vdc
Supply Voltage
V
D1, 2, 3
Gate Voltage
V
–3.5 to –4.5
1700 to 1900
0 to 6
Vdc
SS
RF
RF Frequency Range
RF Input Power
f
MHz
dBm
P
RF
ELECTRICAL CHARACTERISTICS (V
= 3.6 V, V
= –4 V, P = 5 dBm, Peak Measurement at 12.5% Duty Cycle, 4.6 ms
SS in
D1, 2, 3
Period, T = 25°C unless otherwise noted. Measured in Reference Circuit Shown in Figure 1)
A
Characteristic
Min
Typ
—
Max
1785
—
Unit
MHz
dBm
%
Frequency Range
Output Power
1710
32
35
—
33.5
42
Power Added Efficiency
—
Output Power (PCS 1900 Tuning f = 1850 to 1910 MHz)
Power Added Efficiency (PCS 1900 Tuning f = 1850 to 1910 MHz)
Input VSWR
33.5
42
—
dBm
%
—
—
—
2:1
–35
32
—
VSWR
dBc
Harmonic Output (2nd and 3rd)
—
–30
—
Output Power at Low voltage (V , V , V
D1 D2 D3
= 3.0 V)
30
—
dBm
dBm
dBm
dBc
Output Power Isolation (V , V , V
D1 D2 D3
= 0 V)
–40
–85
—
–30
–80
–60
Noise Power (In 100 kHz, 1805 to 1880 MHz)
—
Stability – Spurious Output (P = 5 dBm, P
VSWR = 6:1 at any Phase Angle, Source VSWR = 3:1, at any Phase Angle)
= 0 to 33 dBm, Load
out
—
in
(1)
Load Mismatch stress (P = 33 dBm, Load VSWR = 10:1 at
any Phase Angle)
No Degradation in Output Power after Returning to
Standard Conditions
out
(1)
3 dB V Bandwidth
—
—
2
—
2
MHz
mA
DD
Negative Supply Current
(1) Adjust V (0 to 3.6 V) for specified P ; Duty Cycle = 12.5%, Period = 4.6 ms.
0.7
D1, 2, 3
out
V
D2
V
D3
V
D1
V
SS
R1
R2
8
7
9
T4
T3
C1
L1
C11
10
11
C9 C8
C2
C3
6
5
4
3
2
1
12
13
14
15
16
C4
T1
T5
NC
NC
RF
OUT
C7 C6
L2
T2
C5
C10
NC
RF IN
T2
T3
T4
T5
6 mm 50 Ω Microstrip Line
5 mm 40 Ω Microstrip Line
1 mm 40 Ω Microstrip Line
5.5 mm 50 Microstrip Line
C1
1 nF
L1
18 nH, Coilcraft or 20 mm
50 Ω Microstrip Line
1.8 nH, Toko 2012
2.7 K
C2, C6, C8 22 pF, NPO/COG
C3, C7, C9 47 nF
C4
C5
L2
R1
R2
T1
5.6 pF, AVX0603 ACCUF
3.9 pF, AVX0603 ACCUF
Board Material: Glass/Epoxy, ε = 4.45,
Thickness = 0.5 mm
2.2 KΩ
r
C10, C11 1 pf
2.5 mm 50 Ω Microstrip Line
NOTE: For PCS 1900 tuning the following values are changed.
C5 = 2.7 pF, AVX0603 ACCUF
L2 = 1.5 nH, Toko 2012
T3 = 1 mm 50 Ω Microstrip Line
Figure 1. Reference Circuit Configuration
MRFIC1817
2
MOTOROLA RF DEVICE DATA
D
D
D
D
5
6
7
8
G
S
S
4
V
reg
V
BAT
3.0 V
3.0 V
3
VRAMP
0 V
0 V
2
1
R3
STANDBY
C15
C14
C18
1
2
14
13
Q1
C19
R5
C16
C17
3
4
5
12
11
R1
L1
R2
CR1
10
9
6
7
C11
V
TUNE
G
C13
8
8
9
T4
C1
7
6
5
4
3
2
1
U2
R4
10
11
C2
C5
C3
C21
T3
C10
C9
C12
12
13
14
15
16
T5
T1
RF
OUT
NC
NC
C4
NC
T2
L2
C20
RF IN
IN
U1
C1
6.8 nF
C20, C21
CR1
L1
1 pF
MMBD701LT1
R4
R5
T1
T2
T3
T4
T5
U1
U2
100 Ω
470 Ω
C2, C9, C10 22 pF, 0603 NPO/COG
C3, C11 47 nF
C4
C5
C12
C13, C16, C17, C19 1 µF
C14, C15 1 µF
C18
18 nH, Coilcraft or 20 mm
50 Ω Microstrip Line
1.8 nH, Toko 2012
MMSF4N01HD
2.7 K
0.5 mm 30 Ω Microstrip Line
5 mm 50 Ω Microstrip Line
8 mm 50 Ω Microstrip Line
1 mm 50 Ω Microstrip Line
5.5 mm 50 Microstrip Line
MRFIC1817
5.6 pF, AVX0603 ACCUF
3.9 pF, AVX0603 ACCUF
220 nF
L2
Q1
R1
R2
R3
3 KΩ
22 Ω
1 µF
MC33169 (–4 V Version)
Board Material: Glass/Epoxy, ε = 4.45,
r
Thickness = 0.5 mm
NOTE: For PCS1900 applications, the following
component values are changed
L2 = 1.5 nH Toko 2012
C4 = 6.8 pF, AVX0603 ACCUF
C5 = 2.7 pF, AVX0603 ACCUF
C20 = Not Used
T1 = 0.5 mm 50 Microstrip Line
T2 = 5 mm 50 Microstrip Line
T3 = 1 mm 40 Microstrip Line
Figure 2. DCS1800/PCS1900 Applications Circuit Configuration
MOTOROLA RF DEVICE DATA
MRFIC1817
3
Typical Characteristics
33
32.5
32
48
T
= –35°C
A
T
= –35°C
A
46
44
42
40
25°
C
C
25°
C
C
31.5
31
85°
85°
P
V
V
= 5 dBm
P
V
V
= 5 dBm
in
in
30.5
38
36
, V
V
= 3.6 V
, V
V
= 3 V
D1 D2, D3
D1 D2, D3
= –4 V
= –4 V
SS
SS
30
1.7
1.72
1.74
1.76
1.78
1.8
1.8
1.8
1.7
1.72
1.74
1.76
1.78
1.8
1.8
5
f, FREQUENCY (GHz)
f, FREQUENCY (GHz)
Figure 3. Output Power versus Frequency
Figure 4. Power Added Efficiency
versus Frequency
35
34.5
34
46
V
, V , V
= 4.2 V
D1 D2 D3
45
44
43
42
41
40
39
3.6 V
3 V
T
= –35°C
A
25
°
C
C
33.5
33
85°
P
V
V
= 5 dBm
P
= 5 dBm
= 25°C
= –4 V
in
in
, V
V
= 3.6 V
32.5
T
D1 D2, D3
A
= –4 V
V
SS
SS
32
1.7
1.72
1.74
1.76
1.78
1.7
1.72
1.74
1.76
1.78
f, FREQUENCY (GHz)
f, FREQUENCY (GHz)
Figure 5. Output Power versus Frequency
Figure 6. Power Added Efficiency
versus Frequency
40
30
36
35.5
35
T
= –35°C
A
20
T
= –35°C
A
10
25°C AND 85°C
25
°
C
C
0
–10
–20
–30
–40
34.5
34
85
°
f = 1.75 GHz
P
V
V
= 5 dBm
in
P
V
= 5 dBm
= –4 V
33.5
33
in
SS
, V = 4.2 V
V
D1 D2, D3
SS
–50
–60
= –4 V
0
1
2
3
4
1.7
1.72
1.74
1.76
1.78
V
, V , V , DRAIN VOLTAGE (VOLTS)
f, FREQUENCY (GHz)
D1 D2 D3
Figure 7. Output Power versus Frequency
Figure 8. Output Power versus Drain Voltage
MRFIC1817
4
MOTOROLA RF DEVICE DATA
Typical Characteristics
60
50
40
30
35
33
31
29
27
25
23
21
T
= –35°C
A
T
= –35°C
A
25°C
25°C
85°C
20
10
0
85°C
f = 1.75 GHz
f = 1.75 GHz
19
P
V
= 5 dBm
= –4 V
V
, V
= –4 V
V
= 3.6 V
in
SS
D1 D2, D3
V
17
15
–20
SS
0
1
2
3
4
5
–15
–10
–5
P , INPUT POWER (dBm)
in
0
5
10
V
, V , V , DRAIN VOLTAGE (VOLTS)
D1 D2 D3
Figure 9. Power Added Efficiency versus
Drain Voltage
Figure 10. Output Power versus Input Power
50
45
40
35
30
25
20
15
10
5
–20
–25
–30
–35
–40
–45
–50
–55
–60
f = 1.75 GHz
P
V
= 5 dBm
in
= –4 V
SS
T
= –35°C
A
25°C
T
= –35°C
A
85°C
f = 1.75 GHz
85°C
V
, V = 3.6 V
= –4 V
V
D1 D2, D3
V
SS
0
25°C
0
–20
–15
–10
–5
5
10
0
1
2
3
4
5
P
, INPUT POWER (dBm)
V
, V , V , DRAIN VOLTAGE (VOLTS)
in
D1 D2 D3
Figure 11. Power Added Efficiency versus
Input Power
Figure 12. Second Harmonic versus
Drain Voltage
0
35
34.5
34
f = 1.75 GHz
–5
–10
–15
–20
–25
P
V
= 5 dBm
= –4 V
in
SS
T
= –35°C
A
33.5
33
25
°
C
C
85°
32.5
32
T
= –35°C
A
85°C
25
°C
–30
–35
–40
P
V
V
= 5 dBm
in
, V , V
= 3.6 V
D1 D2 D3
31.5
31
= –4 V
SS
0
1
2
3
4
5
1.85
1.86
1.87
1.88
1.89
1.9
1.91
V
, V , V , DRAIN VOLTAGE (VOLTS)
f, FREQUENCY (GHz)
D1 D2 D3
Figure 13. Third Harmonic versus
Drain Voltage
Figure 14. Output Power versus
Frequency – PCS Band
MOTOROLA RF DEVICE DATA
MRFIC1817
5
Typical Characteristics
48
46
44
42
40
38
36
T
= –35°C
A
25
°
C
C
85°
P
V
V
= 5 dBm
in
, V = 3.6 V
V
D1 D2, D3
34
32
= –4 V
SS
1.85
1.86
1.87
1.88
1.89
1.9
1.91
f, FREQUENCY (GHz)
Figure 15. Power Added Efficiency versus
Frequency – PCS Band
Table 2. Optimum Loads Derived from
Circuit Characterization – PCS Band
Table 1. Optimum Loads Derived from
Circuit Characterization
Z
Z
*
Z
Z
*
in
OHMS
OL
OHMS
in
OHMS
OL
OHMS
f
f
R
jX
R
jX
R
jX
R
jX
MHz
MHz
1850
1860
1870
1880
1890
1900
1910
3.97
3.94
4.09
4.04
4.18
4.27
4.26
–39.68
–40.31
–40.65
–40.92
–41.21
–41.48
–41.71
7.49
7.42
7.38
7.31
7.28
7.28
7.23
3.07
2.81
2.51
2.28
2.02
1.73
1.56
1710
1720
1730
1740
1750
1760
1770
1780
1785
7.77
7.84
7.87
8.07
8.24
8.39
8.44
8.52
8.57
–34.15
–34.37
–34.67
–34.79
–35.05
–35.22
–35.56
–35.79
–35.82
4.89
4.87
4.86
4.78
4.77
4.73
4.70
4.67
4.65
9.50
9.34
9.18
8.94
8.70
8.51
8.32
8.12
7.95
Z
Z
represents the input impedance of the device.
* represents the conjugate of the optimum output load to present
to the device.
in
OL
Z
Z
represents the input impedance of the device.
in
OL
* represents the conjugate of the optimum output load to present
to the device.
MRFIC1817
6
MOTOROLA RF DEVICE DATA
APPLICATIONS INFORMATION
Design Philosophy
The MRFIC1817 is a 3–stage integrated power amplifier
designed for use in cellular phones, especially for those used
in DCS1800 (PCN) 3.6 V operation. With matching circuit
modifications, it is also applicable for use in DCS1900 (PCS)
equipment. Due to the fact that the input, output and some of
the interstage matching is accomplished off–chip, the device
can be tuned to operate anywhere within the 1500 to 2000
MHzfrequencyrange. Typicalperformanceatdifferentbattery
voltages is:
and tempera–ture will not affect amplifier performance
significantly in these applications. The values shown in the
Figure 1 will set quiescent currents of 20 to 40 mA for the first
stage, 150 to 300 mA for the second stage, and 400 to 800
mA for the final stage. For linear modes of operation which
are required for CDMA amplifiers, the quiescent current must
be more carefully controlled. For these applications, the V
G
pins can be referenced to some tunable voltage which is set
at the time of radio manufacturing. Less than 1 mA is
required in the divider network so a DAC can be used as the
voltage source.
•
33.5 dBm @ 3.6 V
32.0 dBm @ 3 V
•
Power Control Using the MC33169
The MC33169 is a dedicated GaAs power amplifier
This capability makes the MRFIC1817 suitable for portable
cellular applications such as:
support IC which provides the –4 V required for V , an
SS
•
•
3 V and 3.6 V DCS1800 Class I and II
3 V and 3.6 V PCS tag5
N–MOS drain switch interface and driver and power supply
sequencing. The MC33169 can be used for power control in
applications where the amplifier is operated in saturation
since the output power in non–linear operation is proportional
RF Circuit Considerations
The MRFIC1817 can be tuned by changing the values
and/or positions of the appropriate external components.
Refer to Figure 2, a typical DCS1800 Class I applications
circuit. The input match is a shunt–L, series–C, high–pass
structure and can be retuned as desired with the only
limitation being the on–chip 6 pF blocking capacitor. For
saturated applications such as DCS1800 and PCS1900, the
input match should be optimized at the rated RF input power.
Interstage matching can be optimized by changing the value
to V . This provides a very linear and repeatable power
D2
control transfer function. This technique can be used open
loop to achieve 40–45 dB dynamic range over process and
temperature variation. With careful design and selection of
calibration points, this technique can be used for DCS1800
control where 30 dB dynamic range is required, eliminating
the need for the complexity and cost of closed–loop control.
The transmit waveform ramping function required for
systems such as DCS1800 can be implemented with a
simple Sallen and Key filter on the MC33169 control loop.
and/or position of the decoupling capacitor on the V
V
and
supply lines. Moving the capacitor closer to the device or
D1
D2
The amplifier is then ramped on as the V
pin is taken
RAMP
reducing the value increases the frequency of resonance
with the inductance of the device’s wirebonds and leadframe
pin. Output matching is accomplished with a low–pass
network as a compromise between bandwidth and harmonic
rejection. Implementation is through high Q capacitors
from 0 V to 3 V. To implement the different power steps
required for DCS1800, the V pin is ramped between 0 V
RAMP
and the appropriate voltage between 0 V and 3 V for the
desired output power. For closed–loop configurations using
the MC33169, MMSF4N01HD N–MOS switch and the
MRFIC1817 provide a typical 1 MHz 3 dB loop bandwidth.
The STANDBY pin must be enabled (3 V) at least 800 µs
mounted along a 50
microstrip transmission line. Values
and positions are chosen to present a 2 W loadline to the
device while conjugating the device output parasitics. The
network must also properly terminate the second and third
harmonics to optimize efficiency and reduce harmonic
output. All components used in this application are low–Q
commercial chip capacitors, except for the output load line.
Loss in circuit traces must also be considered. The output
transmission line and the bias supply lines should be at least
0.6 mm in width to accommodate the peak circulating
currents which can be as high as 2 amperes under worst
case conditions. The bias supply line which supplies the
output should include an RF choke of at least 18 nH, surface
mount solenoid inductors or quarter wave microstrip lines.
Discrete inductors will usually give better efficiency and
conserve board space.
before the V
pin goes high and disabled (0 V) at least 20
RAMP
ms before the V
pin goes low. This STANDBY function
RAMP
allows for the enabling of the MC33169 one burst before the
active burst thus reducing power consumption.
Conclusion
The MRFIC1817 offers the flexibility in matching circuitry
and gate biasing required for portable cellular applications.
Together with the MC33169 support IC, the device offers an
efficient system solution for TDMA applications such as
DCS1800 where saturated amplifier operation is used.
For more information about the power control using the
MC33169, refer to application note AN1599, “Power Control
with the MRFIC0913 GaAs Integrated Power Amplifier and
MC33169 Support IC.”
Biasing Considerations
Gate bias lines are tied together and connected to the V
Evaluation Boards
SS
voltage, allowing gate biasing through use of external
resistors or positive voltages. This allows setting the
quiescent current of all stage in the same time while saving
some board space. For applications where the amplifier is
operated close to saturation, such as with TDMA amplifiers,
the gate bias can be set with resistors. Variations in process
Two versions of the MRFIC1817 evaluation board are
available. Order MRFIC1817DCSTF for the 1.8 GHz version
and order MRFIC1817PCSTF for the 1.9 GHz version. For a
complete list of currently available boards and ones in
development for newly introduced product, please contact
your local Motorola Distributor or Sales Office.
MOTOROLA RF DEVICE DATA
MRFIC1817
7
PACKAGE DIMENSIONS
h X 45
A
D
E2
1
16
NOTES:
1. CONTROLLING DIMENSION: MILLIMETER.
2. DIMENSIONS AND TOLERANCES PER ASME
Y14.5M, 1994.
3. DATUM PLANE –H– IS LOCATED AT BOTTOM OF
LEAD AND IS COINCIDENT WITH THE LEAD
WHERE THE LEAD EXITS THE PLASTIC BODY AT
THE BOTTOM OF THE PARTING LINE.
4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD
PROTRUSION. ALLOWABLE PROTRUSION IS
0.250 PER SIDE. DIMENSIONS D AND E1 DO
INCLUDE MOLD MISMATCH AND ARE
DETERMINED AT DATUM PLANE –H–.
5. DIMENSION b DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION IS 0.127 TOTAL IN EXCESS OF THE
b DIMENSION AT MAXIMUM MATERIAL
CONDITION.
D1
8
9
E1
B
BOTTOM VIEW
8X E
M
S
bbb
C B
6. DATUMS –A– AND –B– TO BE DETERMINED AT
DATUM PLANE –H–.
b1
DATUM
PLANE
H
MILLIMETERS
c
c1
DIM
A
A1
A2
D
D1
E
E1
E2
L
MIN
MAX
2.350
0.152
2.100
7.100
5.180
9.150
7.100
5.180
0.720
A2
A
2.000
0.025
1.950
6.950
4.372
8.850
6.950
4.372
0.466
b
M
S
aaa
C A
DETAIL Y
SEATING
PLANE
C
SECT W–W
L1
b
b1
c
c1
e
0.250 BSC
0.300
0.300
0.180
0.180
0.432
0.375
0.279
0.230
ccc
C
0.800 BSC
W
W
GAUGE
PLANE
h
–––
0
0.200
0.200
0.100
0.600
7
aaa
bbb
ccc
L
A1
1.000
0.039
DETAIL Y
CASE 978–02
ISSUE A
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specificallydisclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
datasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemayvaryovertime. Alloperatingparameters,including“Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applicationsintended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
ordeathmayoccur. ShouldBuyerpurchaseoruseMotorolaproductsforanysuchunintendedorunauthorizedapplication,BuyershallindemnifyandholdMotorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and
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MRFIC1817/D
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