MTD1P50E [MOTOROLA]

TMOS POWER FET 1.0 AMPERES 500 VOLTS 15 OHM; TMOS功率场效应晶体管1.0安培500伏15 OHM


型号：	MTD1P50E
厂家：	MOTOROLA
描述：	TMOS POWER FET 1.0 AMPERES 500 VOLTS 15 OHM TMOS功率场效应晶体管1.0安培500伏15 OHM 晶体晶体管功率场效应晶体管
文件：	总4页 (文件大小：95K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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by MTD1P50E/D

SEMICONDUCTOR TECHNICAL DATA

Motorola Preferred Device

P–Channel Enhancement–Mode Silicon Gate

TMOS POWER FET

1.0 AMPERES

500 VOLTS

This advanced high voltage TMOS E–FET is designed to

withstand high energy in the avalanche mode and switch efficiently.

This new high energy device also offers a drain–to–source diode

with fast recovery time. Designed for high voltage, high speed

switching applications such as power supplies, PWM motor

controls and other inductive loads, the avalanche energy capability

is specified to eliminate the guesswork in designs where inductive

loads are switched and offer additional safety margin against

unexpected voltage transients.

15 Ω

•

Avalanche Energy Capability Specified at Elevated

Temperature

•

Low Stored Gate Charge for Efficient Switching

Internal Source–to–Drain Diode Designed to Replace External

Zener Transient Suppressor–Absorbs High Energy in the

Avalanche Mode

Source–to–Drain Diode Recovery Time Comparable to Discrete

Fast Recovery Diode

•

CASE 369A–13, Style 2

DPAK Surface Mount

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Drain–to–Source Voltage

500

Vdc

DSS

Drain–to–Gate Voltage (R

= 1.0 MΩ)

DGR

500

Gate–to–Source Voltage — Continuous

Gate–to–Source Voltage — Single Pulse (t ≤ 50 µs)

± 20

± 40

GSM

Drain Current — Continuous @ T = 25°C

1.0

0.8

4.0

Adc

Apk

Drain Current — Continuous @ T = 100°C

Drain Current — Single Pulse (t ≤ 10 µs)

Total Power Dissipation @ T = 25°C

Derate above 25°C

0.4

1.75

Watts

W/°C

Watts

Total Power Dissipation @ T = 25°C, when mounted to minimum recommended pad size

Operating and Storage Temperature Range

T , T

stg

–55 to 150

°C

UNCLAMPED DRAIN–TO–SOURCE AVALANCHE CHARACTERISTICS (T < 150°C)

Single Pulse Drain–to–Source Avalanche Energy — Starting T = 25°C

= 100 Vdc, V = 10 Vdc, Peak I = 3.0 Apk, L = 10 mH, R = 25 Ω)

GS L G

THERMAL CHARACTERISTICS

Thermal Resistance — Junction to Case

Thermal Resistance — Junction to Ambient

Thermal Resistance — Junction to Ambient (1)

2.5

100

71.4

°C/W

°C

θJC

θJA

Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds

260

(1) When surface mounted to an FR4 board using the minimum recommended pad size.

This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.

E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

Thermal Clad is a trademark of the Bergquist Company.

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola TMOS Power MOSFET Transistor Device Data

Motorola, Inc. 1996

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(BR)DSS

= 0 Vdc, I = 0.25 mAdc)

500

—

TBD

—

Vdc

V/°C

Temperature Coefficient (Positive)

Zero Gate Voltage Drain Current

µAdc

DSS

= 500 Vdc, V

= 0 Vdc)

= 0 Vdc, T = 125°C)

—

100

Gate–Body Leakage Current (V

= ±20 Vdc, V

= 0)

—

100

nAdc

GSS

ON CHARACTERISTICS*

Gate Threshold Voltage

GS(th)

= V , I = 0.25 mAdc)

2.0

—

3.1

TBD

4.0

—

Vdc

mV/°C

Threshold Temperature Coefficient (Negative)

Static Drain–to–Source On–Resistance (V = 10 Vdc, I = 0.5 Adc)

—

Ohms

Vdc

= 10 Vdc)

DS(on)

Drain–to–Source On–Voltage (V

DS(on)

(I = 1.0 Adc)

—

15.8

(I = 0.5 Adc, T = 125°C)

Forward Transconductance (V

= 15 Vdc, I = 0.5 Adc)

0.4

0.6

—

mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

—

TBD

iss

= 25 Vdc, V = 0 Vdc,

Output Capacitance

oss

f = 1.0 MHz)

Transfer Capacitance

rss

SWITCHING CHARACTERISTICS*

Turn–On Delay Time

—

TBD

—

d(on)

= 250 Vdc, I = 1.0 Adc,

Rise Time

= 10 Vdc,

Turn–Off Delay Time

Fall Time

d(off)

= 9.1 Ω)

Gate Charge

= 400 Vdc, I = 1.0 Adc,

= 10 Vdc)

—

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage

Vdc

(I = 1.0 Adc, V

= 0 Vdc)

= 0 Vdc, T = 125°C)

—

2.0

TBD

3.5

—

Reverse Recovery Time

—

TBD

—

(I = 1.0 Adc,

dI /dt = 100 A/µs)

Reverse Recovery Stored Charge

µC

* Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

Motorola TMOS Power MOSFET Transistor Device Data

PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

SEATING

PLANE

–T–

2. CONTROLLING DIMENSION: INCH.

INCHES

MILLIMETERS

DIM

MIN

MAX

0.250

0.265

0.094

0.035

0.040

0.047

MIN

5.97

6.35

2.19

0.69

0.84

0.94

MAX

6.35

6.73

2.38

0.88

1.01

1.19

0.235

0.250

0.086

0.027

0.033

0.037

0.180 BSC

4.58 BSC

0.034

0.018

0.102

0.040

0.023

0.114

0.87

0.46

2.60

1.01

0.58

2.89

0.090 BSC

2.29 BSC

0.175

0.020

0.030

0.138

0.215

0.050

–––

0.050

–––

4.45

0.51

0.77

3.51

5.46

1.27

–––

1.27

–––

STYLE 2:

PIN 1. GATE

D 2 PL

0.13 (0.005)

2. DRAIN

3. SOURCE

4. DRAIN

CASE 369A–13

ISSUE W

Motorola TMOS Power MOSFET Transistor Device Data

Motorolareserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representationorguaranteeregarding

the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,

andspecifically disclaims any and all liability, includingwithoutlimitationconsequentialorincidentaldamages. “Typical” parameters can and do vary in different

applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does

not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in

systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of

the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such

unintendedor unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless

against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.

Motorola and

are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:

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JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki,

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6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315

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51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298

Motorola TMOS Power MOSFET Transistor Device Data

MTD1P50E/D

◊

MTD1P50E [MOTOROLA]

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