MUN5235T3 [MOTOROLA]
100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, SC-70, 3 PIN;
| 型号： | MUN5235T3 |
| 厂家： | 
MOTOROLA |
| 描述： | 100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, SC-70, 3 PIN |
| 文件： | 总12页 (文件大小：172K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preferred Devices
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base–emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the
SC–70/SOT–323 package which is designed for low power surface
mount applications.
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NPN SILICON
BIAS RESISTOR
TRANSISTORS
• Simplifies Circuit Design
• Reduces Board Space
PIN3
COLLECTOR
(OUTPUT)
• Reduces Component Count
R1
• The SC–70/SOT–323 package can be soldered using
wave or reflow. The modified gull–winged leads absorb
thermal stress during soldering eliminating the possibility
of damage to the die.
PIN1
R2
BASE
(INPUT)
PIN2
EMITTER
(GROUND)
• Available in 8 mm embossed tape and reel
Use the Device Number to order the 7 inch/3000 unit reel.
Replace “T1” with “T3” in the Device Number to order
the 13 inch/10,000 unit reel.
3
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Symbol
Value
50
Unit
Vdc
1
2
V
CBO
V
CEO
50
Vdc
CASE 419
SC–70/SOT–323
STYLE 3
I
C
100
mAdc
Total Power Dissipation
P
D
(1.)
@ T = 25°C
150
1.2
mW
mW/°C
A
Derate above 25°C
DEVICE MARKING AND RESISTOR VALUES
Preferred devices are recommended choices for future use
and best overall value.
Device
Marking
R1 (K)
R2 (K)
Shipping
3000/Tape & Reel
MUN5211T1
MUN5212T1
MUN5213T1
MUN5214T1
MUN5215T1
MUN5216T1
MUN5230T1
MUN5231T1
MUN5232T1
MUN5233T1
MUN5234T1
MUN5235T1
8A
8B
8C
8D
8E
8F
8G
8H
8J
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
10
22
47
47
∞
(2.)
(2.)
(2.)
(2.)
(2.)
(2.)
(2.)
(2.)
∞
1.0
2.2
4.7
47
47
47
8K
8L
8M
2.2
1. Device mounted on a FR–4 glass epoxy printed circuit board using the
minimum recommended footprint.
2. New devices. Updated curves to follow in subsequent data sheets.
Semiconductor Components Industries, LLC, 2000
1
Publication Order Number:
May, 2000 – Rev. 3
MUN5211T1/D
MUN5211T1 SERIES
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
°C/W
°C
Thermal Resistance — Junction to Ambient (surface mounted)
Operating and Storage Temperature Range
R
833
θ
JA
T , T
–65 to +150
J
stg
Maximum Temperature for Soldering Purposes,
Time in Solder Bath
T
L
260
10
°C
Sec
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V = 50 V, I = 0)
I
I
—
—
—
—
100
500
nAdc
nAdc
mAdc
CB
E
CBO
Collector-Emitter Cutoff Current (V = 50 V, I = 0)
CE
B
CEO
Emitter-Base Cutoff Current
(V = 6.0 V, I = 0)
MUN5211T1
MUN5212T1
MUN5213T1
MUN5214T1
MUN5215T1
MUN5216T1
MUN5230T1
MUN5231T1
MUN5232T1
MUN5233T1
MUN5234T1
MUN5235T1
I
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
EBO
EB
C
Collector-Base Breakdown Voltage (I = 10 µA, I = 0)
V
V
50
50
—
—
—
—
Vdc
Vdc
C
E
(BR)CBO
(3.)
Collector-Emitter Breakdown Voltage
(I = 2.0 mA, I = 0)
C
B
(BR)CEO
ON CHARACTERISTICS (3.)
DC Current Gain
MUN5211T1
MUN5212T1
MUN5213T1
MUN5214T1
MUN5215T1
MUN5216T1
MUN5230T1
MUN5231T1
MUN5232T1
MUN5233T1
MUN5234T1
MUN5235T1
h
FE
35
60
80
60
—
—
—
—
—
—
—
—
—
—
—
—
(V = 10 V, I = 5.0 mA)
100
140
140
350
350
5.0
15
CE
C
80
160
160
3.0
8.0
15
80
80
80
30
200
150
140
Collector-Emitter Saturation Voltage (I = 10 mA, I = 0.3 mA)
V
CE(sat)
—
—
0.25
Vdc
Vdc
C
B
(I = 10 mA, I = 5 mA) MUN5230T1/MUN5231T1
C
B
(I = 10 mA, I = 1 mA) MUN5215T1/MUN5216T1
C
B
MUN5232T1/MUN5233T1/MUN5234T1
Output Voltage (on)
(V = 5.0 V, V = 2.5 V, R = 1.0 kΩ)
V
OL
MUN5211lT1
MUN5212T1
MUN5214T1
MUN5215T1
MUN5216T1
MUN5230T1
MUN5231T1
MUN5232T1
MUN5233T1
MUN5234T1
MUN5235T1
MUN5213T1
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
CC
B
L
(V = 5.0 V, V = 3.5 V, R = 1.0 kΩ)
CC
B
L
3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
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2
MUN5211T1 SERIES
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Output Voltage (off) (V = 5.0 V, V = 0.5 V, R = 1.0 kΩ)
V
OH
4.9
—
—
Vdc
CC
B
L
(V = 5.0 V, V = 0.050 V, R = 1.0 kΩ)
MUN5230T1
CC
B
L
(V = 5.0 V, V = 0.25 V, R = 1.0 kΩ)
MUN5215T1
MUN5216T1
MUN5233T1
CC
B
L
Input Resistor
MUN5211T1
MUN5212T1
MUN5213T1
MUN5214T1
MUN5215T1
MUN5216T1
MUN5230T1
MUN5231T1
MUN5232T1
MUN5233T1
MUN5234T1
MUN5235T1
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
k Ω
15.4
1.54
28.6
2.86
2.2
Resistor Ratio
MUN5211T1/MUN5212T1/MUN5213T1
MUN5214T1
MUN5215T1/MUN5216T1
MUN5230T1/MUN5231T1/MUN5232T1
MUN5233T1
R1/R2
0.8
0.17
—
1.0
0.21
—
1.0
0.1
1.2
0.25
—
0.8
1.2
0.055
0.38
0.038
0.185
0.56
0.056
MUN5234T1
MUN5235T1
0.47
0.047
250
200
150
100
R
θ
= 833°C/W
JA
50
0
–50
0
50
100
150
T , AMBIENT TEMPERATURE (°C)
A
Figure 1. Derating Curve
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3
MUN5211T1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5211T1
1
1000
I /I = 10
C B
V
CE
= 10 V
T = –25°C
A
25°C
T =75°C
A
25°C
0.1
–25°C
75°C
100
0.01
0.001
10
0
20
40
50
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 2. VCE(sat) versus IC
Figure 3. DC Current Gain
4
3
100
10
25°C
75°C
f = 1 MHz
I = 0 V
E
T = –25°C
A
T = 25°C
A
1
0.1
2
1
0
0.01
0.001
V = 5 V
O
0
10
20
30
40
50
0
1
2
3
4
5
6
7
8
9
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 4. Output Capacitance
Figure 5. Output Current versus Input Voltage
10
V = 0.2 V
O
T = –25°C
A
25°C
75°C
1
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 6. Input Voltage versus Output Current
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4
MUN5211T1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5212T1
1000
1
V
CE
= 10 V
I /I = 10
C B
T =75°C
A
25°C
25°C
T = –25°C
A
0.1
–25°C
75°C
100
10
0.01
0.001
1
10
100
0
20
40
50
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 7. VCE(sat) versus IC
Figure 8. DC Current Gain
4
3
2
1
0
100
10
1
75°C
25°C
f = 1 MHz
I = 0 V
T = 25°C
A
T = –25°C
A
E
0.1
0.01
V = 5 V
O
0.001
0
10
20
30
40
50
0
2
4
6
8
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 9. Output Capacitance
Figure 10. Output Current versus Input Voltage
100
V = 0.2 V
O
T = –25°C
A
10
1
25°C
75°C
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 11. Input Voltage versus Output Current
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5
MUN5211T1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5213T1
10
1
1000
V
= 10 V
CE
I /I = 10
C B
T =75°C
A
25°C
–25°C
25°C
75°C
100
T = –25°C
A
0.1
0.01
10
0
20
I , COLLECTOR CURRENT (mA)
40
50
1
10
100
I , COLLECTOR CURRENT (mA)
C
C
Figure 12. VCE(sat) versus IC
Figure 13. DC Current Gain
1
100
10
1
25°C
f = 1 MHz
I = 0 V
T = 25°C
A
75°C
E
T = –25°C
A
0.8
0.6
0.4
0.1
0.01
0.2
0
V = 5 V
O
0.001
0
10
20
30
40
50
0
2
4
6
8
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 14. Output Capacitance
Figure 15. Output Current versus Input Voltage
100
V = 0.2 V
O
T = –25°C
A
25°C
75°C
10
1
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 16. Input Voltage versus Output Current
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6
MUN5211T1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5214T1
1
0.1
300
T =75°C
A
V
CE
= 10
I /I = 10
C B
T = –25°C
250
200
150
100
A
25°C
25°C
75°C
–25°C
0.01
50
0
0.001
0
20
40
60
80
1
2
4
6
8
10 15 20 40 50 60 70 80 90 100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 17. VCE(sat) versus IC
Figure 18. DC Current Gain
4
3.5
3
100
10
1
f = 1 MHz
T =75°C
25°C
A
l = 0 V
E
T = 25°C
A
–25°C
2.5
2
1.5
1
0.5
0
V = 5 V
O
0
2
4
6
8
10 15 20 25 30 35 40 45 50
0
2
4
6
8
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 19. Output Capacitance
Figure 20. Output Current versus Input Voltage
10
V = 0.2 V
O
T = –25°C
A
25°C
75°C
1
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 21. Input Voltage versus Output Current
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7
MUN5211T1 SERIES
TYPICAL APPLICATIONS FOR NPN BRTs
+12 V
ISOLATED
LOAD
FROM µP OR
OTHER LOGIC
Figure 22. Level Shifter: Connects 12 or 24 Volt Circuits to Logic
+12 V
V
CC
OUT
IN
LOAD
Figure 23. Open Collector Inverter:
Inverts the Input Signal
Figure 24. Inexpensive, Unregulated Current Source
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8
MUN5211T1 SERIES
MINIMUM RECOMMENDED FOOTPRINTS FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the
total design. The footprint for the semiconductor packages
must be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.025
0.65
0.025
0.65
0.075
1.9
0.035
0.9
0.028
0.7
inches
mm
SC–70/SOT–323 POWER DISSIPATION
The power dissipation of the SC–70/SOT–323 is a
function of the pad size. This can vary from the minimum
pad size for soldering to the pad size given for maximum
power dissipation. Power dissipation for a surface mount
into the equation for an ambient temperature T of 25°C,
one can calculate the power dissipation of the device which
in this case is 150 milliwatts.
A
150°C – 25°C
PD
=
= 150 milliwatts
device is determined by T
, the maximum rated
J(max)
833°C/W
junction temperature of the die, R , the thermal
θJA
The 833°C/W assumes the use of the recommended
footprint on a glass epoxy printed circuit board to achieve a
power dissipation of 150 milliwatts. Another alternative
would be to use a ceramic substrate or an aluminum core
board such as Thermal Clad . Using a board material such
as Thermal Clad, a power dissipation of 300 milliwatts can
be achieved using the same footprint.
resistance from the device junction to ambient; and the
operating temperature, T . Using the values provided on
A
the data sheet, P can be calculated as follows:
D
TJ(max) – TA
PD
=
Rθ
JA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within
a short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
• Always preheat the device.
• The delta temperature between the preheat and
soldering should be 100°C or less.*
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference should be a maximum of 10°C.
• The soldering temperature and time should not exceed
260°C for more than 10 seconds.
• When shifting from preheating to soldering, the
maximum temperature gradient should be 5°C or less.
• After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied
during cooling
* Soldering a device without preheating can cause
excessive thermal shock and stress which can result in
damage to the device.
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MUN5211T1 SERIES
SOLDER STENCIL GUIDELINES
Prior to placing surface mount components onto a printed
or stainless steel with a typical thickness of 0.008 inches.
The stencil opening size for the surface mounted package
should be the same as the pad size on the printed circuit
board, i.e., a 1:1 registration.
circuit board, solder paste must be applied to the pads. A
solder stencil is required to screen the optimum amount of
solder paste onto the footprint. The stencil is made of brass
TYPICAL SOLDER HEATING PROFILE
For any given circuit board, there will be a group of
control settings that will give the desired heat pattern. The
operator must set temperatures for several heating zones,
and a figure for belt speed. Taken together, these control
settings make up a heating “profile” for that particular
circuit board. On machines controlled by a computer, the
computer remembers these profiles from one operating
session to the next. Figure 25 shows a typical heating
profile for use when soldering a surface mount device to a
printed circuit board. This profile will vary among
soldering systems but it is a good starting point. Factors that
can affect the profile include the type of soldering system in
use, density and types of components on the board, type of
solder used, and the type of board or substrate material
being used. This profile shows temperature versus time.
The line on the graph shows the actual temperature that
might be experienced on the surface of a test board at or
near a central solder joint. The two profiles are based on a
high density and a low density board. The Vitronics
SMD310 convection/infrared reflow soldering system was
used to generate this profile. The type of solder used was
62/36/2 Tin Lead Silver with a melting point between
177–189°C. When this type of furnace is used for solder
reflow work, the circuit boards and solder joints tend to
heat first. The components on the board are then heated by
conduction. The circuit board, because it has a large surface
area, absorbs the thermal energy more efficiently, then
distributes this energy to the components. Because of this
effect, the main body of a component may be up to 30
degrees cooler than the adjacent solder joints.
STEP 5
HEATING
ZONES 4 & 7
“SPIKE”
STEP 6 STEP 7
VENT COOLING
STEP 1
PREHEAT
ZONE 1
STEP 2
VENT
“SOAK” ZONES 2 & 5
“RAMP”
STEP 3
HEATING
STEP 4
HEATING
ZONES 3 & 6
“SOAK”
205° TO 219°C
PEAK AT
SOLDER JOINT
“RAMP”
200°C
150°C
170°C
DESIRED CURVE FOR HIGH
MASS ASSEMBLIES
160°C
150°C
SOLDER IS LIQUID FOR
40 TO 80 SECONDS
(DEPENDING ON
140°C
100°C
MASS OF ASSEMBLY)
100°C
50°C
DESIRED CURVE FOR LOW
MASS ASSEMBLIES
TIME (3 TO 7 MINUTES TOTAL)
T
MAX
Figure 25. Typical Solder Heating Profile
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10
MUN5211T1 SERIES
PACKAGE DIMENSIONS
SC–70
(SOT–323)
CASE 419–02
ISSUE J
A
L
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
3
2. CONTROLLING DIMENSION: INCH.
B
S
INCHES
DIM MIN MAX
MILLIMETERS
1
2
MIN
1.80
1.15
0.90
0.30
1.20
0.00
0.10
MAX
2.20
1.35
1.25
0.40
1.40
0.10
0.25
A
B
C
D
G
H
J
0.071
0.045
0.035
0.012
0.047
0.000
0.004
0.087
0.053
0.049
0.016
0.055
0.004
0.010
D
V
G
K
L
N
R
S
0.017 REF
0.026 BSC
0.028 REF
0.425 REF
0.650 BSC
0.700 REF
R
J
N
C
0.031
0.079
0.012
0.039
0.087
0.016
0.80
2.00
0.30
1.00
2.20
0.40
0.05 (0.002)
V
K
H
STYLE 1:
STYLE 2:
PIN 1. ANODE
2. N.C.
STYLE 3:
PIN 1. BASE
STYLE 4:
PIN 1. CATHODE
STYLE 5:
PIN 1. ANODE
2. ANODE
CANCELLED
2. EMITTER
3. COLLECTOR
2. CATHODE
3. ANODE
3. CATHODE
3. CATHODE
STYLE 6:
PIN 1. EMITTER
STYLE 7:
PIN 1. BASE
STYLE 8:
PIN 1. GATE
STYLE 9:
PIN 1. ANODE
2. CATHODE
STYLE 10:
PIN 1. CATHODE
2. ANODE
2. BASE
3. COLLECTOR
2. EMITTER
3. COLLECTOR
2. SOURCE
3. DRAIN
3. CATHODE–ANODE
3. ANODE–CATHODE
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11
MUN5211T1 SERIES
Thermal Clad is a trademark of the Bergquist Company
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
withoutfurthernoticetoanyproductsherein. SCILLCmakesnowarranty,representationorguaranteeregardingthesuitabilityofitsproductsforanyparticular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLCproductsarenotdesigned, intended, orauthorizedforuseascomponentsinsystemsintendedforsurgicalimplantintothebody, orotherapplications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable
attorneyfees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
NORTH AMERICA Literature Fulfillment:
CENTRAL/SOUTH AMERICA:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Spanish Phone: 303–308–7143 (Mon–Fri 8:00am to 5:00pm MST)
Email: ONlit–spanish@hibbertco.com
Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada
Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada
Email: ONlit@hibbertco.com
ASIA/PACIFIC: LDC for ON Semiconductor – Asia Support
Phone: 303–675–2121 (Tue–Fri 9:00am to 1:00pm, Hong Kong Time)
Toll Free from Hong Kong & Singapore:
Fax Response Line: 303–675–2167 or 800–344–3810 Toll Free USA/Canada
001–800–4422–3781
N. American Technical Support: 800–282–9855 Toll Free USA/Canada
Email: ONlit–asia@hibbertco.com
EUROPE: LDC for ON Semiconductor – European Support
German Phone: (+1) 303–308–7140 (M–F 1:00pm to 5:00pm Munich Time)
Email: ONlit–german@hibbertco.com
JAPAN: ON Semiconductor, Japan Customer Focus Center
4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031
Phone: 81–3–5740–2745
French Phone: (+1) 303–308–7141 (M–F 1:00pm to 5:00pm Toulouse Time)
Email: ONlit–french@hibbertco.com
English Phone: (+1) 303–308–7142 (M–F 12:00pm to 5:00pm UK Time)
Email: ONlit@hibbertco.com
Email: r14525@onsemi.com
ON Semiconductor Website: http://onsemi.com
EUROPEAN TOLL–FREE ACCESS*: 00–800–4422–3781
For additional information, please contact your local
Sales Representative.
*Available from Germany, France, Italy, England, Ireland
MUN5211T1/D
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