MP2670 [MPS]

Li-ion Battery Charger Protection Circuit;
MP2670
型号: MP2670
厂家: MONOLITHIC POWER SYSTEMS    MONOLITHIC POWER SYSTEMS
描述:

Li-ion Battery Charger Protection Circuit

电池
文件: 总12页 (文件大小:386K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MP2670  
Li-ion Battery Charger  
Protection Circuit  
The Future of Analog IC Technology  
DESCRIPTION  
FEATURES  
The MP2670 is a high-performance single cell  
Li-Ion/Li-Polymer battery charger protection  
circuit. By integrating high voltage input  
protection into the charger IC, the MP2670 can  
tolerate an input surge up to +30V.  
Input Surge up to 30V  
Input Over voltage protection in 1us.  
Proprietary Battery Over-Voltage Protection  
Programmable Charge Current Protection  
Limit Value.  
Temperature Monitoring and Protection  
Fault Indication  
Enable Input  
The device features input over voltage  
protection (OVP), battery over voltage  
protection (BOVP) and over charge current  
protection (OCP). The device also provides  
fault indications to the system when any of the  
protection events happens.  
3mm x 3mm QFN Package  
APPLICATIONS  
Cell Phones  
MP3 Players  
Smart Phones  
PDA  
Digital Cameras  
Desktop Chargers  
For guaranteed safe operation, the MP2670  
monitors its own internal temperature and turns  
off the MOSFET bridging VIN and OUT when  
the die temperature exceeds 150oC.  
The MP2670 is available in a 10-pin 3mm x  
3mm QFN package.  
“MPS” and “The Future of Analog IC Technology” are Registered Trademarks of  
Monolithic Power Systems, Inc.  
TYPICAL APPLICATION  
LINEAR  
COUT  
INPUT  
BATTERY  
VIN  
OUT  
VB  
CHARGER  
CIN  
MP2670  
ILIM  
R
VB  
R
ILIM  
+
EN  
BATTERY  
PACK  
GND  
FLT  
R
FLT  
MP2670 Rev. 0.91  
5/13/2010  
www.MonolithicPower.com  
MPS Proprietary Information. Unauthorized Photocopy and Duplication Prohibited.  
© 2010 MPS. All Rights Reserved.  
1
MP2670 – CHARGE SYSTEM PROTECTION CIRCUIT  
ORDERING INFORMATION  
Part Number*  
Package  
Top Marking  
Temperature  
QFN10  
MP2670DQ  
X7  
–40°C to +85°C  
(3mm x 3mm)  
* For Tape & Reel, add suffix –Z (g. MP2670DQ–Z).For RoHS compliant packaging, add suffix –LF (e.g.  
MP2670DQ–LF–Z)  
PACKAGE REFERENCE  
TOP VIEW  
VIN  
GND  
FLT  
NC  
1
2
3
4
5
10 OUT  
9
8
7
6
OUT  
ILIM  
VB  
NC  
EN  
EXPOSED PAD  
ON BACKSIDE  
CONNECT TO GND  
ABSOLUTE MAXIMUM RATINGS (1)  
VIN to GND......................................0.3V to 30V  
OUT and VB to GND........................0.3V to 7V  
Recommended Operating Conditions (2)  
Supply Voltage VIN ..........................4.3V to 5.5V  
Operating Temperature............. –40°C to +85°C  
Other Pins (ILIM, FLT , EN )..........0.3V to 5.5V  
Junction Temperature...............................150°C  
Lead Temperature (Solder).......................260°C  
Storage Temperature.............. –65°C to +150°C  
Thermal Resistance (3)  
QFN10 (3mm x 3mm) .............50 ...... 12...°C/W  
θJA  
θJC  
Notes:  
1) Exceeding these ratings may damage the device.  
2) The device is not guaranteed to function outside of its  
operating conditions.  
3) Measured on JESD51-7, 4-layer PCB.  
MP2670 Rev. 0.91  
5/13/2010  
www.MonolithicPower.com  
MPS Proprietary Information. Unauthorized Photocopy and Duplication Prohibited.  
© 2010 MPS. All Rights Reserved.  
2
MP2670 – CHARGE SYSTEM PROTECTION CIRCUIT  
ELECTRICAL CHARACTERISTICS  
VIN = 5V, TA = +25°C, unless otherwise noted.  
Parameter  
Symbol Condition  
Min  
Typ  
Max  
Units  
Power-On Reset  
Rising VIN Threshold  
POR Hysteresis  
VPOR  
2.45  
3.0  
V
110  
0.6  
25  
mV  
mA  
µA  
When enabled  
When disabled  
VIN Bias Current  
IVIN  
Protection  
Input Over-voltage Protection  
(OVP)  
VOVP  
5.55  
5.80  
50  
6.0  
V
Input OVP Hysteresis  
mV  
V
Input OVP Falling Threshold  
Input OVP Propagation Delay  
Over-current Protection  
5.45  
0.90  
1
µs  
A
IOCP  
VVB = 3V, RILIM = 25k  
1.0  
1.10  
Overcurrent Protection Blanking  
Time  
BTOCP  
170  
µs  
V
Battery Over-voltage Protection  
Threshold  
VBOVP  
4.29  
4.475  
Battery OVP Threshold  
Hysteresis  
75  
mV  
Battery OVP Falling Threshold  
Battery OVP Blanking Time  
VB Pin Leakage Current  
4.225  
V
BTBOVP  
180  
20  
µs  
nA  
VVB = 4.4V  
Over Temperature Protection  
Rising Threshold  
150  
110  
°C  
°C  
Over Temperature Protection  
Falling Threshold  
Logic  
1.5  
V
V
EN Input Logic HIGH  
0.4  
EN Input Logic LOW  
EN Internal Series Resistor  
FLT Output Logic Low  
100  
200  
0.5  
400  
0.8  
kΩ  
Sink 5mA current  
V
FLT Output Logic High Leakage  
Current  
1
µA  
Power MOSFET  
Measured at 500mA,  
4.3<VIN<5.5V  
On Resistance  
RDS(ON)  
250  
450  
mΩ  
MP2670 Rev. 0.91  
5/13/2010  
www.MonolithicPower.com  
MPS Proprietary Information. Unauthorized Photocopy and Duplication Prohibited.  
© 2010 MPS. All Rights Reserved.  
3
MP2670 – CHARGE SYSTEM PROTECTION CIRCUIT  
PIN FUNCTIONS  
10-pin  
Name  
QFN  
Description  
1
VIN  
Input Power Source. VIN can withstand 30V input.  
GND,  
System Ground. Exposed pad and GND pin must be connected to the same ground  
2
Exposed Pad plane.  
3
Open-Drain Logic Output. This pin turns LOW when any protection event occurs.  
FLT  
NC  
NC  
4
5
No Connect. Keep it floating.  
No Connect. Keep it floating.  
Enable. Leave this pin floating or pull it below 0.4V to enable the IC. Drive this pin  
higher than 1.5V to disable the IC.  
6
7
8
EN  
VB  
Battery Voltage Monitoring Input. Connect this pin to the battery pack positive  
terminal via an isolation resistor.  
Over-current Protection Threshold Setting. Connect a resistor between this pin and  
GND to set the OCP threshold.  
ILIM  
9
OUT  
OUT  
Output pin  
Output pin  
10  
MP2670 Rev. 0.91  
5/13/2010  
www.MonolithicPower.com  
MPS Proprietary Information. Unauthorized Photocopy and Duplication Prohibited.  
© 2010 MPS. All Rights Reserved.  
4
MP2670 – CHARGE SYSTEM PROTECTION CIRCUIT  
TYPICAL PERFORMANCE CHARACTERISTICS  
VCC = 5V, RILIM=50k, RFLT =200k, CIN=4.7μF, COUT=1μF, TA = +25ºC, unless otherwise noted.  
V
V
IN  
2V/div  
IN  
2V/div  
V
V
OUT  
2V/div  
OUT  
2V/div  
V
IN  
2V/div  
V
OUT  
2V/div  
OUT  
200mA/div  
I
I
I
OUT  
200mA/div  
OUT  
200mA/div  
V
V
EN  
2V/div  
EN  
2V/div  
V
IN  
V
V
OUT  
2V/div  
OUT  
2V/div  
2V/div  
I
200mA/div  
V
I
OUT  
2V/div  
OUT  
OUT  
200mA/div  
I
V
V
OUT  
200mA/div  
FLT  
FLT  
5V/div  
5V/div  
V
V
IN  
IN  
2V/div  
OUT  
2V/div  
2V/div  
OUT  
2V/div  
V
V
V
IN  
2V/div  
I
I
V
OUT  
OUT  
OUT  
500mA/div  
200mA/div  
2V/div  
I
OUT  
V
V
200mA/div  
FLT  
FLT  
V
5V/div  
5V/div  
FLT  
5V/div  
MP2670 Rev. 0.91  
5/13/2010  
www.MonolithicPower.com  
MPS Proprietary Information. Unauthorized Photocopy and Duplication Prohibited.  
© 2010 MPS. All Rights Reserved.  
5
MP2670 – CHARGE SYSTEM PROTECTION CIRCUIT  
TYPICAL PERFORMANCE CHARACTERISTICS (continued)  
VCC = 5V, RILIM=50k, RFLT =200k, CIN=4.7μF, COUT=1μF, TA = +25ºC, unless otherwise noted.  
V
IN  
5V/div  
V
V
V
VB  
IN  
2V/div  
IN  
2V/div  
2V/div  
V
V
OUT  
2V/div  
OUT  
2V/div  
V
OUT  
2V/div  
I
OUT  
200mA/div  
V
VB  
2V/div  
V
FLT  
5V/div  
V
FLT  
5V/div  
V
FLT  
5V/div  
I
OUT  
500mA/div  
I
OUT  
500mA/div  
V
IN  
2V/div  
V
IN  
2V/div  
V
OUT  
2V/div  
V
OUT  
2V/div  
V
FLT  
5V/div  
V
V
IN  
IN  
2V/div  
OUT  
2V/div  
OUT  
V
V
200mV/div  
200mV/div  
V
V
FLT  
FLT  
5V/div  
5V/div  
I
I
OUT  
OUT  
500mA/div  
500mA/div  
MP2670 Rev. 0.91  
5/13/2010  
www.MonolithicPower.com  
MPS Proprietary Information. Unauthorized Photocopy and Duplication Prohibited.  
© 2010 MPS. All Rights Reserved.  
6
MP2670 – CHARGE SYSTEM PROTECTION CIRCUIT  
TYPICAL PERFORMANCE CHARACTERISTICS (continued)  
VCC = 5V, RILIM=50k, RFLT =200k, CIN=4.7μF, COUT=1μF, TA = +25ºC, unless otherwise noted.  
Shut Down Current vs. Current Limit vs.  
V
IN  
(Disabled)  
R
ILIM  
1.6  
1.4  
1.2  
1
0.8  
0.6  
0.4  
0.2  
0
0
50 100 150 200 250 300  
MP2670 Rev. 0.91  
5/13/2010  
www.MonolithicPower.com  
MPS Proprietary Information. Unauthorized Photocopy and Duplication Prohibited.  
© 2010 MPS. All Rights Reserved.  
7
MP2670 – CHARGE SYSTEM PROTECTION CIRCUIT  
BLOCK DIAGRAM  
LINEAR  
OUT  
V
IN  
INPUT  
BATTERY  
CHARGER  
Q1  
Q2  
Q3  
EA  
ILIM  
POR  
PRE-REG  
REF  
FET  
DRIVER  
RILIM  
- -  
CP2  
R1  
R2  
--  
+
--  
+
- -  
0.8V  
CP1  
1.2V  
LOGIC  
CP3  
RVB  
VB  
R
Q5  
Q4  
+
FLT  
EN  
GND  
Figure 1—Functional Block Diagram  
MP2670 Rev. 0.91  
5/13/2010  
www.MonolithicPower.com  
MPS Proprietary Information. Unauthorized Photocopy and Duplication Prohibited.  
© 2010 MPS. All Rights Reserved.  
8
MP2670 – CHARGE SYSTEM PROTECTION CIRCUIT  
OPERATION  
The MP2670 is designed to provide a  
redundant safety protection to a Li-Ion battery  
from failures of the charging system. The IC  
continuously monitors the input voltage, the  
battery voltage, and the charge current. When  
any of the above three parameters exceeds its  
limit, the IC turns off an internal N-channel  
MOSFET to remove the power from the  
charging system. The threshold of charge  
current protection is user-programmable.  
Additionally, the IC also monitors its own die  
temperature and turns off the N-channel  
MOSFET if the temperature exceeds 150°C.  
Together with the battery charging IC and the  
protection module in a battery pack, the  
charging system has triple-level protection from  
over-charging the Li-Ion battery and is two–fault  
tolerant. The MP2670 protects up to 30V input  
voltage.  
When the input over-voltage condition is  
removed, the power FET is turned on again by  
running through the soft-start. Because of the  
10ms second delay before the soft-start, the  
output is never enabled if the input rises above  
the OVP threshold quickly.  
Over-current Protection (OCP)  
The current in the power FET is limited to  
prevent charging the battery with an excessive  
current. The current is sensed using the voltage  
drop across the power FET after the FET is  
turned on. The reference of the OCP is  
generated using a sensing FET Q2, as shown  
in Figure 1. The current in the sensing FET is  
forced to a value which can be programmed by  
an external resistor connected to the ILIM pin.  
The size of the power FET Q1 is 31,250 times  
the size of the sensing FET Q2. Therefore,  
when the current in the power FET is 31,250  
times the current in the sensing FET, the drain  
voltage of the power FET falls below that of the  
sensing FET. The comparator CP2 then outputs  
a signal to turn off the power FET. The OCP  
threshold can be programmed using the  
following formula:  
Power Up  
The MP2670 has a power-on reset (POR)  
threshold of 2.6V with a built-in hysteresis of  
110mV. When the input voltage is below the  
POR threshold, the internal power FET is off.  
The IC resets itself and waits for approximately  
10ms after the input voltage exceeds the POR  
threshold, then, if the input voltage and battery  
voltage are safe, the IC begins to soft-start the  
internal power FET. The 10ms delay allows any  
transient at the input during a hot insertion of  
the power supply to settle down before the IC  
stars to operate. The soft-start slowly turns on  
the power FET to reduce the inrush current as  
well as the input voltage drop during the  
transition.  
0.8V  
25000  
ILIM (A) =  
×31250 =  
RILIM (Ω)  
RILIM (Ω)  
The OCP comparator CP2 has a built-in 170µs  
delay to prevent false triggering by transient  
signals. When OCP happened, Vo shuts down  
for about 40ms and take 10ms delay to soft  
start as the OCP condition is removed. The  
OCP function also has a 4-bit binary counter  
that accumulates during an OCP event. When  
the total count reaches 16, the power PFET is  
turned off permanently unless the input power  
is recycled or the enable pin is toggled.  
Input Over-voltage Protection (OVP)  
The input voltage is continuously monitored by  
the comparator CP1 in the Block Diagram  
(Figure 1). The OVP threshold is set by a  
resistive divider consisting of R1 and R2 and an  
accurate reference generated by the IC itself.  
The protection threshold is set to 5.8V. When  
the input voltage exceeds the threshold, the  
CP1 outputs a logic signal to turn off the power  
FET within 1µs to prevent the high input voltage  
from damaging the electronics in the handheld  
system. The hysteresis for the input OVP  
threshold is given in the Electrical Specification.  
MP2670 Rev. 0.91  
5/13/2010  
www.MonolithicPower.com  
MPS Proprietary Information. Unauthorized Photocopy and Duplication Prohibited.  
© 2010 MPS. All Rights Reserved.  
9
MP2670 – CHARGE SYSTEM PROTECTION CIRCUIT  
External Enable Function  
Battery Over-voltage Protection (BOVP)  
The MP2670 offers an enable (EN ) input which  
can be used to enable or disable the IC. When  
The battery voltage OVP threshold is internally  
set to 4.4V. The threshold has 75mV built-in  
hysteresis. The comparator CP3, as shown in  
Figure 1, monitors the VB pin and issues an  
over-voltage signal to turn off the internal power  
FET when the battery voltage exceeds the  
battery OVP threshold. The comparator CP3  
has a built-in 180µs blanking time to prevent  
any transient voltage from triggering the OVP. If  
the OVP situation still exists after the blanking  
time, the power FET is turned off. There is an  
internal 4-bit binary counter monitoring the  
occurrences of the battery over-voltage event. If  
the battery over-voltage occurs 16 times, the  
power FET is turned off permanently. Recycling  
the EN pin is pulled to logic HIGH, the  
protection IC is shut down. The internal control  
circuit as well as the power FET is turned off.  
Both 4-bit binary counters for the battery OVP  
and the OCP are reset to zero when the IC is  
re-enabled. The EN pin has an internal 200k  
pull-down resistor. Leaving the EN pin floating  
or driving it to below 0.4V enables the IC.  
Warning Indication Output  
The FLT pin is an open-drain output that  
indicates a LOW signal when any of the three  
protection events happens. To pull the FLT pin  
voltage low when fault, a recommended 10kꢀ  
to 200kresistor should be used as the pull up  
resistor.  
the input power or toggling the enable ( EN )  
input will reset the counter and restart the  
MP2670.  
The resistor between the VB pin and the battery,  
RVB, as shown in the Typical Applications circuit,  
is an important component. This resistor  
provides a current limit in case the VB pin is  
shorted to the input voltage under a failure  
mode. The VB pin leakage current under  
normal operation is negligible to allow a  
resistance of 200kto 1Mbeing used.  
Thermal Protection  
The MP2670 monitors its own die temperature  
to prevent thermal failures. When the internal  
temperature reaches 150°C, the internal N-  
channel power MOSFET is turned off. The IC  
does not resume operation until the internal  
temperature drops below 110°C.  
MP2670 Rev. 0.91  
5/13/2010  
www.MonolithicPower.com  
MPS Proprietary Information. Unauthorized Photocopy and Duplication Prohibited.  
© 2010 MPS. All Rights Reserved.  
10  
MP2670 – CHARGE SYSTEM PROTECTION CIRCUIT  
APPLICATION INFORMATION  
For safe and effective charging, some strict  
requirements have to be satisfied during  
charging Li-Ion batteries such as high precise  
power source for charging (4.2V±50mV), the  
accuracy should be higher than 1%. For highly  
used capacity, the voltage of the battery should  
be charged to the value (4.2V) as possible as  
could. Otherwise, the performance and the life  
of the battery suffers overcharge. Additionally,  
the pre-charge for depleted batteries, charging  
voltage, charging current, as well as the  
temperature detection and protection, are  
required for linear battery chargers. The output  
of most MPS linear charger has a typical I-V  
curve and provides overcharge, input over  
voltage, over temperature protection. The  
function of the MP2670 is to add a redundant  
protection layer such that, under any fault  
condition, the charging system output does not  
exceed the I-V limits that the battery required.  
Additionally, MP2670 provides full protection for  
these chargers whose protection function is not  
so complete especially those without input  
surge voltage sustain. MP2670 guarantees the  
safety of the charge system with its perfect 4  
protection functions: OVP, BOVP, OCP and  
OTP  
the input decoupling capacitor is recommended  
to use a dielectric ceramic capacitor with a  
value between 1µF to 4.7µF.  
The output of the MP2670 and the input of the  
charging circuit typically share one decoupling  
capacitor. The selection of that capacitor is  
mainly determined by the requirement of the  
charging circuit. When using the MP2602 family  
chargers, a 1µF to 4.7uF ceramic capacitor is  
recommended.  
RVB Selection  
RVB limits the current from the VB pin to the  
battery terminal in case the MP2670 fails. The  
recommended value is between 200kto 1M.  
With 200kresistance, during the failure  
operation, assuming the VB pin voltage is 30V  
and the battery voltage is 4.2V. The worst case  
the current flowing from the VB pin to the  
charger output is,  
(30V - 4.2V)/200k= 130µA,  
Such small current can be easily absorbed by  
the bias current of other components.  
Increasing the RVB value reduces the worst  
case current, but at the same time increases  
the error for the 4.4V battery OVP threshold.  
As the typical VB pin leakage current is 20nA,  
the error of the battery OVP threshold can be  
calculated as 4.4V+20nAxRVB. With the 200kꢀ  
resistor, the worst-case additional error is 4mV  
and with a 1Mresistor, the worst-case  
additional error is 20mV.  
The MP2670 is a simple device that requires  
few external components, in addition to the  
linear charger circuit as shown in the Typical  
Application Circuit. The selection of MP2670’s  
external components is shown as follow, and  
the selection of the current limit resistor RILIM  
has been introduced in the Over-current  
Protection section.  
CIN and COUT Selection  
The input capacitor (CIN) is for decoupling.  
Higher value of CIN reduces the voltage drop or  
the over shoot during transients. The AC  
adapter is inserted live (hot insertion) and  
sudden step down of the current in the power  
FET will cause the input voltage overshoot.  
During an input OVP, the FET is turned off in  
less than 1µs and can lead to significant over  
shoot. Higher capacitance of CIN reduces this  
type of over shoot. However, the over shoot  
caused by a hot insertion is not very dependent  
on the decoupling capacitance value. Usually,  
MP2670 Rev. 0.91  
5/13/2010  
www.MonolithicPower.com  
MPS Proprietary Information. Unauthorized Photocopy and Duplication Prohibited.  
© 2010 MPS. All Rights Reserved.  
11  
MP2670 – CHARGE SYSTEM PROTECTION CIRCUIT  
PACKAGE INFORMATION  
QFN10 (3mmx3mm)  
2.90  
3.10  
0.30  
0.50  
1.45  
1.75  
PIN 1 ID  
SEE DETAIL A  
PIN 1 ID  
MARKING  
0.18  
0.30  
10  
1
5
2.25  
2.55  
2.90  
3.10  
PIN 1 ID  
INDEX AREA  
0.50  
BSC  
6
TOP VIEW  
BOTTOM VIEW  
PIN 1 ID OPTION A  
R0.20 TYP.  
PIN 1 ID OPTION B  
R0.20 TYP.  
0.80  
1.00  
0.20 REF  
0.00  
0.05  
SIDE VIEW  
DETAIL A  
NOTE:  
2.90  
1) ALL DIMENSIONS ARE IN MILLIMETERS.  
0.70  
1.70  
2) EXPOSED PADDLE SIZE DOES NOT INCLUDE MOLD FLASH.  
3) LEAD COPLANARITY SHALL BE 0.10 MILLIMETER MAX.  
4) DRAWING CONFORMS TO JEDEC MO-229, VARIATION VEED-5.  
5) DRAWING IS NOT TO SCALE.  
0.25  
0.50  
2.50  
RECOMMENDED LAND PATTERN  
NOTICE: The information in this document is subject to change without notice. Users should warrant and guarantee that third  
party Intellectual Property rights are not infringed upon when integrating MPS products into any application. MPS will not  
assume any legal responsibility for any said applications.  
MP2670 Rev. 0.91  
5/13/2010  
www.MonolithicPower.com  
MPS Proprietary Information. Unauthorized Photocopy and Duplication Prohibited.  
© 2010 MPS. All Rights Reserved.  
12  

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SI9137

Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

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SI9137DB

Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

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SI9137LG

Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

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SI9122E

500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification Drivers

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