MX25L1633EZNI-10G [Macronix]
Flash, 4MX4, PDSO8, 6 X 5 MM, 0.80 MM HEIGHT, 1.27 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, MO-220, WSON-8;
| 型号： | MX25L1633EZNI-10G |
| 厂家： | 
MACRONIX INTERNATIONAL |
| 描述： | Flash, 4MX4, PDSO8, 6 X 5 MM, 0.80 MM HEIGHT, 1.27 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, MO-220, WSON-8 时钟 光电二极管 内存集成电路 |
| 文件： | 总49页 (文件大小：1109K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MX25L1633E
MX25L1633E
DATASHEET
P/N: PM1581
REV. 1.8, NOV. 08, 2013
1
MX25L1633E
Contents
FEATURES .................................................................................................................................................5
General..............................................................................................................................................................5
Performance......................................................................................................................................................5
Software Features.............................................................................................................................................5
Hardware Features............................................................................................................................................6
GENERAL DESCRIPTION ........................................................................................................................7
Table 1. Additional Feature Comparison ...........................................................................................................7
PIN CONFIGURATIONS ............................................................................................................................8
PIN DESCRIPTION.....................................................................................................................................8
BLOCK DIAGRAM......................................................................................................................................9
DATA PROTECTION.................................................................................................................................10
Table 2. Protected Area Sizes.........................................................................................................................11
Table 3. 512-bit Secured OTP Definition.........................................................................................................11
Memory Organization..............................................................................................................................12
Table 4. Memory Organization .......................................................................................................................12
DEVICE OPERATION...............................................................................................................................13
Figure 1. Serial Modes Supported...................................................................................................................13
COMMAND DESCRIPTION......................................................................................................................14
Table 5. Command Set....................................................................................................................................14
(1) Write Enable (WREN)................................................................................................................................15
(2) Write Disable (WRDI).................................................................................................................................15
(3) Read Identification (RDID).........................................................................................................................15
(4) Read Status Register (RDSR)...................................................................................................................16
Status Register................................................................................................................................................16
(5) Write Status Register (WRSR)...................................................................................................................17
Table 6. Protection Modes...............................................................................................................................17
(6) Read Data Bytes (READ) ..........................................................................................................................18
(7) Read Data Bytes at Higher Speed (FAST_READ) ....................................................................................18
(8) 2 x I/O Read Mode (2READ) .....................................................................................................................18
(9) 4 x I/O Read Mode (4READ) .....................................................................................................................19
(10) Sector Erase (SE)....................................................................................................................................19
(11) Block Erase (BE)......................................................................................................................................20
(12) Chip Erase (CE).......................................................................................................................................20
(13) Page Program (PP)..................................................................................................................................20
(14) 4 x I/O Page Program (4PP)....................................................................................................................21
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REV. 1.8, NOV. 08, 2013
2
MX25L1633E
(15) Deep Power-down (DP)...........................................................................................................................21
(16) Release from Deep Power-down (RDP), Read Electronic Signature (RES) ...........................................21
(17) Read Electronic Manufacturer ID & Device ID (REMS), (REMS2), (REMS4) .........................................22
Table 7. ID Definitions ....................................................................................................................................22
(18) Enter Secured OTP (ENSO)....................................................................................................................22
(19) Exit Secured OTP (EXSO).......................................................................................................................23
(20) Read Security Register (RDSCUR) .........................................................................................................23
Table 8. Security Register Definition ...............................................................................................................23
(21) Write Security Register (WRSCUR).........................................................................................................23
POWER-ON STATE..................................................................................................................................24
ELECTRICAL SPECIFICATIONS.............................................................................................................25
Absolute Maximum Ratings ............................................................................................................................25
Figure 2. Maximum Negative Overshoot Waveform .......................................................................................25
Capacitance ....................................................................................................................................................25
Figure 3. Maximum Positive Overshoot Waveform.........................................................................................25
Figure 4. Input Test Waveforms and Measurement Level...............................................................................26
Figure 5. Output Loading.................................................................................................................................26
Table 9. DC Characteristics.............................................................................................................................27
Table 10. AC Characteristics...........................................................................................................................28
Timing Analysis.......................................................................................................................................29
Figure 6. Serial Input Timing ...........................................................................................................................29
Figure 7. Output Timing...................................................................................................................................29
Figure 8. WP# Setup Timing and Hold Timing during WRSR when SRWD=1................................................30
Figure 9. Write Enable (WREN) Sequence (Command 06)............................................................................30
Figure 10. Write Disable (WRDI) Sequence (Command 04)...........................................................................30
Figure 11. Read Identification (RDID) Sequence (Command 9F)...................................................................31
Figure 12. Read Status Register (RDSR) Sequence (Command 05).............................................................31
Figure 13. Write Status Register (WRSR) Sequence (Command 01)............................................................31
Figure 14. Read Data Bytes (READ) Sequence (Command 03) ...................................................................32
Figure 15. Read at Higher Speed (FAST_READ) Sequence (Command 0B) ...............................................32
Figure 16. 2 x I/O Read Mode Sequence (Command BB)..............................................................................33
Figure 17. 4 x I/O Read Mode Sequence (Command EB)..............................................................................33
Figure 18. 4 x I/O Read enhance performance Mode Sequence (Command EB)..........................................34
Figure 19. Page Program (PP) Sequence (Command 02).............................................................................35
Figure 20. 4 x I/O Page Program (4PP) Sequence (Command 38)...............................................................35
Figure 21. Sector Erase (SE) Sequence (Command 20)...............................................................................36
Figure 22. Block Erase (BE) Sequence (Command D8)................................................................................36
Figure 23. Chip Erase (CE) Sequence (Command 60 or C7)........................................................................36
Figure 24. Deep Power-down (DP) Sequence (Command B9)......................................................................37
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MX25L1633E
Figure 25. RDP and Read Electronic Signature (RES) Sequence (Command AB) .......................................37
Figure 26. Release from Deep Power-down (RDP) Sequence (Command AB) ............................................38
Figure 27. Read Electronic Manufacturer & Device ID (REMS) Sequence (Command 90 or EF or DF).......38
Figure 28. Power-up Timing............................................................................................................................39
Table 11. Power-Up Timing .............................................................................................................................39
Initial Delivery State.........................................................................................................................................39
OPERATING CONDITIONS......................................................................................................................40
Figure 29. AC Timing at Device Power-Up......................................................................................................40
Figure 30. Power-Down Sequence .................................................................................................................41
ERASE AND PROGRAMMING PERFORMANCE...................................................................................42
DATA RETENTION ..................................................................................................................................42
LATCH-UP CHARACTERISTICS.............................................................................................................42
ORDERING INFORMATION.....................................................................................................................43
PART NAME DESCRIPTION....................................................................................................................44
PACKAGE INFORMATION.......................................................................................................................45
REVISION HISTORY ................................................................................................................................48
P/N: PM1581
REV. 1.8, NOV. 08, 2013
4
MX25L1633E
16M-BIT [x 1/x 2/x 4] CMOS MXSMIO (SERIAL MULTI I/O) FLASH MEMORY
FEATURES
General
• Serial Peripheral Interface compatible -- Mode 0 and Mode 3
•
16,777,216 x 1 bit structure or 8,388,608 x 2 bits (two I/O read mode) structure or 4,194,304 x 4 bits (four I/O
read mode) structure
• 512 Equal Sectors with 4K byte each
- Any Sector can be erased individually
• 32 Equal Blocks with 64K byte each
- Any Block can be erased individually
• Single Power Supply Operation
- 2.7 to 3.6 volt for read, erase, and program operations
• Latch-up protected to 100mA from -1V to Vcc +1V
Performance
• High Performance
- Fast read
- 1 I/O: 104MHz with 8 dummy cycles
- 2 I/O: 85MHz with 4 dummy cycles
- 4 I/O: 85MHz with 6 dummy cycles
- Fast access time: 104MHz serial clock
- Serial clock of four I/O read mode : 85MHz, which is equivalent to 340MHz
- Fast program time: 0.6ms(typ.) and 3ms(max.)/page (256-byte per page)
- Byte program time: 9us (typical)
- Fast erase time: 40ms (typ.)/sector (4K-byte per sector) ; 0.4s(typ.) /block (64K-byte per block); 5s(typ.) /chip
• Low Power Consumption
- Low active read current: 25mA(max.) at 104MHz and 10mA(max.) at 33MHz
- Low active programming current: 15mA (typ.)
- Low active sector erase current: 9mA (typ.)
- Low standby current: 15uA (typ.)
• Typical 100,000 erase/program cycles
• 20 years data retention
Software Features
• Input Data Format
- 1-byte Command code
• Advanced Security Features
- Block lock protection
The BP0-BP3 status bit defines the size of the area to be software protection against program and erase
instructions
- Additional 512-bit secured OTP for unique identifier
• Auto Erase and Auto Program Algorithm
- Automatically erases and verifies data at selected sector
- Automatically programs and verifies data at selected page by an internal algorithm that automatically times the
program pulse widths (Any page to be programed should have page in the erased state first)
•
Status Register Feature
• Electronic Identification
- JEDEC 1-byte manufacturer ID and 2-byte device ID
- RES command for 1-byte Device ID
- Both REMS,REMS2 and REMS4 commands for 1-byte manufacturer ID and 1-byte device ID
P/N: PM1581
REV. 1.8, NOV. 08, 2013
5
MX25L1633E
Hardware Features
• SCLK Input
- Serial clock input
• SI/SIO0
- Serial Data Input or Serial Data Input/Output for 2 x I/O read mode and 4 x I/O read mode
• SO/SIO1
- Serial Data Output or Serial Data Input/Output for 2 x I/O read mode and 4 x I/O read mode
• WP#/SIO2
- Hardware write protection or serial data Input/Output for 4 x I/O read mode
• NC/SIO3
- NC pin or serial data Input/Output for 4 x I/O read mode
• PACKAGE
- 8-land WSON (6x5mm)
- 8-land USON (4x4mm)
- 8-pin SOP (200mil)
- All devices are RoHS Compliant & Halogen-free.
P/N: PM1581
REV. 1.8, NOV. 08, 2013
6
MX25L1633E
GENERAL DESCRIPTION
The MX25L1633E are 16,777,216 bit serial Flash memory, which is configured as 2,097,152 x 8 internally. When it
is in two or four I/O read mode, the structure becomes 8,388,608 bits x 2 or 4,194,304 bits x 4. The MX25L1633E
feature a serial peripheral interface and software protocol allowing operation on a simple 3-wire bus. The three bus
signals are a clock input (SCLK), a serial data input (SI), and a serial data output (SO). Serial access to the device
is enabled by CS# input.
When it is in two I/O read mode, the SI pin and SO pin become SIO0 pin and SIO1 pin for address/dummy bits in-
put and data output. When it is in four I/O read mode, the SI pin, SO pin, WP# pin and NC pin become SIO0 pin,
SIO1 pin, SIO2 pin and SIO3 pin for address/dummy bits input and data output.
The MX25L1633E provides sequential read operation on whole chip.
After program/erase command is issued, auto program/erase algorithms which program/erase and verify the speci-
fied page or sector/block locations will be executed. Program command is executed on byte basis, or page (256
bytes) basis, and erase command is executes on sector (4K-byte), or block (64K-byte), or whole chip basis.
To provide user with ease of interface, a status register is included to indicate the status of the chip. The status read
command can be issued to detect completion status of a program or erase operation via WIP bit.
Advanced security features enhance the protection and security functions, please see security features section for
more details.
When the device is not in operation and CS# is high, it is put in standby mode.
The MX25L1633E utilizes Macronix proprietary memory cell, which reliably stores memory contents even after
100,000 program and erase cycles.
Table 1. Additional Feature Comparison
Protection and
Security
Read
Performance
Identifier
Additional
Features
Flexible
Block
Protection secured
512-bit
RES
REMS
REMS2
REMS4
RDID
2 I/O
4 I/O
Part
Name
(command: (command: (command: (command: (command:
Read
Read
(BP0-
BP3)
OTP
AB hex)
90 hex)
EF hex)
DF hex)
9F hex)
C2 24 (hex) C2 24 (hex) C2 24 (hex) C2 24 15
MX25L1633E
MX25L1635D
V
V
V
V
V
V
V
V
24 (hex)
24 (hex)
(if ADD=0) (if ADD=0) (if ADD=0)
C2 24 (hex) C2 24 (hex) C2 24 (hex) C2 24 15
(if ADD=0) (if ADD=0) (if ADD=0) (hex)
(hex)
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REV. 1.8, NOV. 08, 2013
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MX25L1633E
PIN CONFIGURATIONS
8-PIN SOP (200mil)
8-LAND WSON (6x5mm), USON (4x4mm)
1
VCC
CS#
SO/SIO1
WP#/SIO2
GND
8
7
6
5
1
2
3
4
CS#
SO/SIO1
WP#/SIO2
GND
VCC
8
7
6
5
NC/SIO3
SCLK
2
3
4
NC/SIO3
SCLK
SI/SIO0
SI/SIO0
PIN DESCRIPTION
SYMBOL DESCRIPTION
CS#
Chip Select
Serial Data Input (for 1 x I/O)/ Serial
Data Input & Output (for 2xI/O or 4xI/
O read mode)
SI/SIO0
Serial Data Output (for 1 x I/O)/ Serial
Data Input & Output (for 2xI/O or 4xI/
O read mode)
SO/SIO1
SCLK
Clock Input
Write protection: connect to GND or
WP#/SIO2 Serial Data Input & Output (for 4xI/O
read mode)
NC pin (Not connect) or Serial Data
Input & Output (for 4xI/O read mode)
NC/SIO3
VCC
+ 3.3V Power Supply
GND
Ground
P/N: PM1581
REV. 1.8, NOV. 08, 2013
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MX25L1633E
BLOCK DIAGRAM
Address
Generator
Memory Array
Page Buffer
Data
Register
SI/SIO0
Y-Decoder
SRAM
Buffer
Sense
Amplifier
CS#
WP#/SIO2
NC/SIO3
Mode
Logic
State
Machine
HV
Generator
SCLK
Clock Generator
Output
Buffer
SO/SIO1
P/N: PM1581
REV. 1.8, NOV. 08, 2013
9
MX25L1633E
DATA PROTECTION
During power transition, there may be some false system level signals which result in inadvertent erasure or pro-
gramming. The device is designed to protect itself from these accidental write cycles.
The state machine will be reset as standby mode automatically during power up. In addition, the control register
architecture of the device constrains that the memory contents can only be changed after specific command se-
quences have completed successfully.
In the following, there are several features to protect the system from the accidental write cycles during VCC power-
up and power-down or from system noise.
•
•
Valid command length checking: The command length will be checked whether it is at byte base and completed
on byte boundary.
Write Enable (WREN) command: WREN command is required to set the Write Enable Latch bit (WEL) before
other command to change data. The WEL bit will return to reset stage under following situation:
- Power-up
- Write Disable (WRDI) command completion
- Write Status Register (WRSR) command completion
- Page Program (PP, 4PP) command completion
- Sector Erase (SE) command completion
- Block Erase (BE) command completion
- Chip Erase (CE) command completion
•
•
Deep Power Down Mode: By entering deep power down mode, the flash device also is under protected from
writing all commands except Release from deep power down mode command (RDP) and Read Electronic Sig-
nature command (RES).
Advanced Security Features: there are some protection and securuity features which protect content from inad-
vertent write and hostile access.
I. Block lock protection
- The Software Protected Mode (SPM) use (BP3, BP2, BP1, BP0) bits to allow part of memory to be protected
as read only. The proected area definition is shown as table of "Protected Area Sizes", the protected areas are
more flexible which may protect various area by setting value of BP0-BP3 bits.
Please refer to table of "protected area sizes".
- The Hardware Proteced Mode (HPM) use WP#/SIO2 to protect the (BP3, BP2, BP1, BP0) bits and SRWD bit.
If the system goes into four I/O read mode, the feature of HPM will be disabled.
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REV. 1.8, NOV. 08, 2013
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MX25L1633E
Table 2. Protected Area Sizes
Status bit
Protect Level
BP0 16Mb
BP3
0
BP2
0
BP1
0
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0 (none)
0
0
0
1 (1block, protected block 31th)
2 (2blocks, protected block 30th-31th)
3 (4blocks, protected block 28th-31th)
4 (8blocks, protected block 24th-31th)
5 (16blocks, protected block 16th-31th)
6 (32blocks, protected all)
0
0
1
0
0
1
0
1
0
0
1
0
0
1
1
0
1
1
7 (32blocks, protected all)
1
0
0
8 (32blocks, protected all)
1
0
0
9 (32blocks, protected all)
1
0
1
10 (16blocks, protected block 0th-15th)
11 (24blocks, protected block 0th-23th)
12 (28blocks, protected block 0th-27th)
13 (30blocks, protected block 0th-29th)
14 (31blocks, protected block 0th-30th)
15 (32blocks, protected all)
1
0
1
1
1
0
1
1
0
1
1
1
1
1
1
II. Additional 512-bit secured OTP for unique identifier: to provide 512-bit one-time program area for setting
device unique serial number - Which may be set by factory or system customer. Please refer to table 3. 512-bit
secured OTP definition.
- Security register bit 0 indicates whether the chip is locked by factory or not.
- To program the 512-bit secured OTP by entering 512-bit secured OTP mode (with ENSO command), and go-
ing through normal program procedure, and then exiting 512-bit secured OTP mode by writing EXSO command.
- Customer may lock-down the customer lockable secured OTP by writing WRSCUR(write security register)
command to set customer lock-down bit1 as "1". Please refer to table of "security register definition" for security
register bit definition and table of "512-bit secured OTP definition" for address range definition.
- Note: Once lock-down whatever by factory or customer, it cannot be changed any more. While in 512-bit se-
cured OTP mode, array access is not allowed.
Table 3. 512-bit Secured OTP Definition
Address range
xxxx00~xxxx0F
xxxx10~xxxx3F
Size
Standard Factory Lock
ESN (electrical serial number)
N/A
Customer Lock
128-bit
384-bit
Determined by customer
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REV. 1.8, NOV. 08, 2013
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MX25L1633E
Memory Organization
Table 4. Memory Organization
Block
Sector
255
:
Address Range
0FF000h 0FFFFFh
Block
Sector
511
:
Address Range
1FF000h 1FFFFFh
15
:
:
31
:
:
240
239
:
224
223
:
208
207
:
192
191
:
176
175
:
160
159
:
144
143
:
128
127
:
112
111
:
96
95
:
80
79
:
64
63
:
48
47
:
32
31
:
16
15
:
0F0000h
0EF000h
:
0E0000h
0DF000h
:
0D0000h
0CF000h
:
0C0000h
0BF000h
:
0B0000h
0AF000h
:
0A0000h
09F000h
:
090000h
08F000h
:
080000h
07F000h
:
070000h
06F000h
:
060000h
05F000h
:
050000h
04F000h
:
040000h
03F000h
:
030000h
02F000h
:
020000h
01F000h
:
010000h
00F000h
:
0F0FFFh
0EFFFFh
:
0E0FFFh
0DFFFFh
:
0D0FFFh
0CFFFFh
:
0C0FFFh
0BFFFFh
:
0B0FFFh
0AFFFFh
:
0A0FFFh
09FFFFh
:
090FFFh
08FFFFh
:
080FFFh
07FFFFh
:
070FFFh
06FFFFh
:
060FFFh
05FFFFh
:
050FFFh
04FFFFh
:
040FFFh
03FFFFh
:
030FFFh
02FFFFh
:
020FFFh
01FFFFh
:
010FFFh
00FFFFh
:
496
495
:
480
479
:
464
463
:
448
447
:
432
431
:
416
415
:
400
399
:
384
383
:
368
367
:
352
351
:
336
335
:
320
319
:
304
303
:
288
287
:
272
271
:
1F0000h
1EF000h
:
1E0000h
1DF000h
:
1D0000h
1CF000h
:
1C0000h
1BF000h
:
1B0000h
1AF000h
:
1A0000h
19F000h
:
190000h
18F000h
:
180000h
17F000h
:
170000h
16F000h
:
160000h
15F000h
:
150000h
14F000h
:
140000h
13F000h
:
130000h
12F000h
:
120000h
11F000h
:
110000h
10F000h
:
1F0FFFh
1EFFFFh
:
1E0FFFh
1DFFFFh
:
1D0FFFh
1CFFFFh
:
1C0FFFh
1BFFFFh
:
1B0FFFh
1AFFFFh
:
1A0FFFh
19FFFFh
:
190FFFh
18FFFFh
:
180FFFh
17FFFFh
:
170FFFh
16FFFFh
:
160FFFh
15FFFFh
:
150FFFh
14FFFFh
:
140FFFh
13FFFFh
:
130FFFh
12FFFFh
:
120FFFh
11FFFFh
:
110FFFh
10FFFFh
:
14
13
12
11
10
9
30
29
28
27
26
25
24
23
22
21
20
19
18
17
16
8
7
6
5
4
3
2
1
0
2
1
0
002000h
001000h
000000h
002FFFh
001FFFh
000FFFh
256
100000h
100FFFh
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REV. 1.8, NOV. 08, 2013
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MX25L1633E
DEVICE OPERATION
1. Before a command is issued, status register should be checked to ensure device is ready for the intended op-
eration.
2. When incorrect command is inputted to this LSI, this LSI becomes standby mode and keeps the standby mode
until next CS# falling edge. In standby mode, all SO pins of this LSI should be High-Z.
3. When correct command is inputted to this LSI, this LSI becomes active mode and keeps the active mode until
next CS# rising edge.
4. Input data is latched on the rising edge of Serial Clock(SCLK) and data shifts out on the falling edge of SCLK.
The difference of Serial mode 0 and mode 3 is shown as Figure 1.
5. For the following instructions: RDID, RDSR, RDSCUR, READ, FAST_READ, 2READ, 4READ, RES, REMS,
REMS2, and REMS4 the shifted-in instruction sequence is followed by a data-out sequence. After any bit of data
being shifted out, the CS# can be high. For the following instructions: WREN, WRDI, WRSR, SE, BE, CE, PP,
4PP, RDP, DP, ENSO, EXSO,and WRSCUR, the CS# must go high exactly at the byte boundary; otherwise, the
instruction will be rejected and not executed.
6. During the progress of Write Status Register, Program, Erase operation, to access the memory array is neglect-
ed and not affect the current operation of Write Status Register, Program, Erase.
Figure 1. Serial Modes Supported
CPOL CPHA
shift in
shift out
SCLK
SCLK
(Serial mode 0)
(Serial mode 3)
0
1
0
1
SI
MSB
SO
MSB
Note:
CPOL indicates clock polarity of Serial master,
-CPOL=1 for SCLK high while idle,
-CPOL=0 for SCLK low while not transmitting.
CPHA indicates clock phase.
The combination of CPOL bit and CPHA bit decides which Serial mode is supported.
P/N: PM1581
REV. 1.8, NOV. 08, 2013
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MX25L1633E
COMMAND DESCRIPTION
Table 5. Command Set
RDID
(read
identific-
ation)
2READ (2 4READ (4
FAST
WREN
(write
enable)
WRDI
(write
disable)
RDSR
(read status (write status
register)
05 (hex)
WRSR
Command
(byte)
READ (read
x I/O read x I/O read
command) command)
READ (fast
read data)
data)
register)
01 (hex)
Values
Note1
Note2
1st byte
2nd byte
06 (hex)
04 (hex)
9F (hex)
03 (hex)
AD1
(A23-A16)
0B (hex)
AD1
BB (hex)
EB (hex)
ADD(4) &
Dummy(4)
ADD(2)
AD2
(A15-A8)
AD3
ADD(2) &
Dummy(2)
3rd byte
AD2
AD3
Dummy(4)
4th byte
5th byte
(A7-A0)
Dummy
n bytes
read out
sets the
resets the
outputs
to read out to write new n bytes
the values values of read out
enable latch enable latch ID: 1-byte of the status the status until CS#
n bytes
read out read out by
n bytes
(WEL) write (WEL) write JEDEC
until CS# by 2 x I/O 4 x I/O until
goes high goes high until CS# CS# goes
Action
bit
bit
Manufact-
urer ID
register
register
goes high
high
& 2-byte
Device ID
RDP
(Release
4PP (quad
page
program)
Command
(byte)
SE (sector
erase)
BE (block
erase)
CE (chip
erase)
PP (page
DP (Deep
RES (read
program) power down) from deep electronic ID)
power down)
1st byte
2nd byte
3rd byte
4th byte
38 (hex)
AD1
20 (hex)
AD1
AD2
D8 (hex) 60 or C7 (hex) 02 (hex)
B9 (hex)
AB (hex)
AB (hex)
AD1
AD2
AD3
AD1
AD2
AD3
x
x
x
AD3
quad input to erase the to erase the
to erase
to program enters deep release from to read out
to program
the selected
page
selected
sector
selected
block
whole chip the selected power down deep power 1-byte Device
Action
page
mode
down mode
ID
Release
Read
Enhanced manufacturer
& device ID)
REMS (read
electronic
REMS2 (read REMS4 (read ENSO (enter EXSO (exit
RDSCUR
(read security (write security
WRSCUR
Command
(byte)
ID for 2x I/O ID for 4x I/O
secured
OTP)
secured
OTP)
mode)
mode)
register)
register)
1st byte
2nd byte
3rd byte
4th byte
FFh (hex)
90 (hex)
EF (hex)
DF (hex)
B1 (hex)
C1 (hex)
2B (hex)
2F (hex)
x
x
x
x
x
X
X
x
x
ADD (Note 3) ADD (Note 3) ADD (Note 3)
output the output the output the
All these
to enter
to exit the to read value to set the
512-bit of security lock-down bit
ID & Device ID & Device ID & Device secured OTP secured OTP
ID ID ID mode mode
commands Manufacturer Manufacturer Manufacturer the 512-bit
FFh, 00h,
AAh or
register
as "1" (once
lock-down,
cannot be
update)
Action
55h will
escape the
performance
enhance
mode
Note 1: The count base is 4-bit for ADD(2) and Dummy(2) because of 2 x I/O.
Note 2: The count base is 4-bit for ADD(4) and Dummy(4) because of 4 x I/O.
Note 3: ADD=00H will output the manufacturer ID first and ADD=01H will output device ID first.
Note 4: It is not recommended to adopt any other code not in the command definition table, which will potentially enter the hid-
den mode.
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MX25L1633E
(1) Write Enable (WREN)
The Write Enable (WREN) instruction is for setting Write Enable Latch (WEL) bit. For those instructions like PP,
4PP, SE, BE, CE, and WRSR, which are intended to change the device content, should be set every time after the
WREN instruction setting the WEL bit.
The sequence of issuing WREN instruction is: CS# goes low→ sending WREN instruction code→CS# goes high. (see
Figure 9)
(2) Write Disable (WRDI)
The Write Disable (WRDI) instruction is for resetting Write Enable Latch (WEL) bit.
The sequence of issuing WRDI instruction is: CS# goes low→sending WRDI instruction code→CS# goes high. (see
Figure 10)
The WEL bit is reset by following situations:
- Power-up
- Write Disable (WRDI) instruction completion
- Write Status Register (WRSR) instruction completion
- Page Program (PP) instruction completion
- Quad Page Program (4PP) instruction completion
- Sector Erase (SE) instruction completion
- Block Erase (BE) instruction completion
- Chip Erase (CE) instruction completion
(3) Read Identification (RDID)
The RDID instruction is for reading the manufacturer ID of 1-byte and followed by Device ID of 2-byte. The Macronix
Manufacturer ID is C2(hex), the memory type ID is 24(hex) as the first-byte device ID, and the individual device ID
of second-byte ID are listed as table of "ID Definitions". (see table 7)
The sequence of issuing RDID instruction is: CS# goes low→sending RDID instruction code→24-bits ID data out on
SO→ to end RDID operation can use CS# to high at any time during data out. (see Figure 11.)
While Program/Erase operation is in progress, it will not decode the RDID instruction, so there's no effect on the cy-
cle of program/erase operation which is currently in progress. When CS# goes high, the device is at standby stage.
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(4) Read Status Register (RDSR)
The RDSR instruction is for reading Status Register Bits. The Read Status Register can be read at any time (even in
program/erase/write status register condition) and continuously. It is recommended to check the Write in Progress (WIP)
bit before sending a new instruction when a program, erase, or write status register operation is in progress.
The sequence of issuing RDSR instruction is: CS# goes low→sending RDSR instruction code→Status Register
data out on SO (see Figure 12)
The definition of the status register bits is as below:
WIP bit. The Write in Progress (WIP) bit, a volatile bit, indicates whether the device is busy in program/erase/write
status register progress. When WIP bit sets to 1, which means the device is busy in program/erase/write status
register progress. When WIP bit sets to 0, which means the device is not in progress of program/erase/write status
register cycle.
WEL bit. The Write Enable Latch (WEL) bit, a volatile bit, indicates whether the device is set to internal write enable
latch. When WEL bit sets to 1, which means the internal write enable latch is set, the device can accept program/
erase/write status register instruction. When WEL bit sets to 0, which means no internal write enable latch; the de-
vice will not accept program/erase/write status register instruction. The program/erase command will be ignored if it
is applied to a protected memory area.
BP3, BP2, BP1, BP0 bits. The Block Protect (BP3, BP2, BP1, BP0) bits, non-volatile bits, indicate the protected
area(as defined in table 2) of the device to against the program/erase instruction without hardware protection mode
being set. To write the Block Protect (BP3, BP2, BP1, BP0) bits requires the Write Status Register (WRSR) instruc-
tion to be executed. Those bits define the protected area of the memory to against Page Program (PP), Sector
Erase (SE), Block Erase (BE) and Chip Erase(CE) instructions (only if all Block Protect bits set to 0, the CE instruc-
tion can be executed).
QE bit. The Quad Enable (QE) bit, non-volatile bit, performs Quad when it is reset to "0" (factory default) to enable
WP# or is set to "1" to enable Quad SIO2 and SIO3.
SRWD bit. The Status Register Write Disable (SRWD) bit, non-volatile bit, which is set to "0" (factory default). The
SRWD bit is operated together with Write Protection (WP#/SIO2) pin for providing hardware protection mode. The
hardware protection mode requires SRWD sets to 1 and WP#/SIO2 pin signal is low stage. In the hardware protec-
tion mode, the Write Status Register (WRSR) instruction is no longer accepted for execution and the SRWD bit and
Block Protect bits (BP3, BP2, BP1, BP0) are read only.
Status Register
bit7
bit6
bit5
BP3
(level of
protected
block)
bit4
BP2
(level of
protected
block)
bit3
BP1
(level of
protected
block)
bit2
BP0
(level of
protected
block)
bit1
bit0
SRWD (status
register write
protect)
QE
(Quad
Enable)
WEL
(write enable
latch)
WIP
(write in
progress bit)
1=Quad
Enable
0=not Quad
Enable
1=write
enable
0=not write 0=not in write
1=write
operation
1=status
register write
disable
(note 1)
(note 1)
(note 1)
(note 1)
enable
operation
Non-volatile Non-volatile Non-volatile Non-volatile Non-volatile Non-volatile
bit bit bit bit bit bit
volatile bit
volatile bit
Note 1: see the table 2 "Protected Area Size".
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MX25L1633E
(5) Write Status Register (WRSR)
The WRSR instruction is for changing the values of Status Register Bits. Before sending WRSR instruction, the
Write Enable (WREN) instruction must be decoded and executed to set the Write Enable Latch (WEL) bit in ad-
vance. The WRSR instruction can change the value of Block Protect (BP3, BP2, BP1, BP0) bits to define the pro-
tected area of memory (as shown in table 2). The WRSR also can set or reset the Quad enable (QE) bit and set or
reset the Status Register Write Disable (SRWD) bit in accordance with Write Protection (WP#/SIO2) pin signal, but
has no effect on bit1(WEL) and bit0 (WIP) of the statur register. The WRSR instruction cannot be executed once the
Hardware Protected Mode (HPM) is entered.
The sequence of issuing WRSR instruction is: CS# goes low→sending WRSR instruction code→Status Register
data on SI→ CS# goes high. (see Figure 13)
The CS# must go high exactly at the byte boundary; otherwise, the instruction will be rejected and not executed.
The self-timed Write Status Register cycle time (tW) is initiated as soon as Chip Select (CS#) goes high. The Write
in Progress (WIP) bit still can be check out during the Write Status Register cycle is in progress. The WIP sets 1
during the tW timing, and sets 0 when Write Status Register Cycle is completed, and the Write Enable Latch (WEL)
bit is reset.
Table 6. Protection Modes
Mode
Status register condition
WP# and SRWD bit status
Memory
Status register can be written
in (WEL bit is set to "1") and
the SRWD, BP0-BP3, QE
bits can be changed
WP#=1 and SRWD bit=0, or
WP#=0 and SRWD bit=0, or
WP#=1 and SRWD=1
The protected area
cannot
be program or erase.
Software protection
mode (SPM)
The SRWD, BP0-BP3, QE of
status register bits cannot be
changed
The protected area
cannot
be program or erase.
Hardware protection
mode (HPM)
WP#=0, SRWD bit=1
Note:
1. As defined by the values in the Block Protect (BP3, BP2, BP1, BP0) bits of the Status Register, as shown in Table 2.
As the above table showing, the summary of the Software Protected Mode (SPM) and Hardware Protected Mode (HPM).
Software Protected Mode (SPM):
-
When SRWD bit=0, no matter WP#/SIO2 is low or high, the WREN instruction may set the WEL bit and can
change the values of SRWD, BP3, BP2, BP1, BP0 and QE. The protected area, which is defined by BP3, BP2,
BP1, BP0, is at software protected mode (SPM).
-
When SRWD bit=1 and WP#/SIO2 is high, the WREN instruction may set the WEL bit can change the values of
SRWD, BP3, BP2, BP1, BP0 and QE. The protected area, which is defined by BP3, BP2, BP1, BP0, is at soft-
ware protected mode (SPM)
Note:
If SRWD bit=1 but WP#/SIO2 is low, it is impossible to write the Status Register even if the WEL bit has previously
been set. It is rejected to write the Status Register and not be executed.
Hardware Protected Mode (HPM):
-
When SRWD bit=1, and then WP#/SIO2 is low (or WP#/SIO2 is low before SRWD bit=1), it enters the hardware
protected mode (HPM). The data of the protected area is protected by software protected mode by BP3, BP2,
BP1, BP0 and hardware protected mode by the WP#/SIO2 to against data modification.
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MX25L1633E
Note:
To exit the hardware protected mode requires WP#/SIO2 driving high once the hardware protected mode is entered.
If the WP#/SIO2 pin is permanently connected to high, the hardware protected mode can never be entered; only
can use software protected mode via BP3, BP2, BP1, BP0.
If the system goes into four I/O read mode, the feature of HPM will be disabled.
(6) Read Data Bytes (READ)
The read instruction is for reading data out. The address is latched on rising edge of SCLK, and data shifts out on
the falling edge of SCLK at a maximum frequency fR. The first address can be at any location. The address is auto-
matically increased to the next higher address after each byte data is shifted out, so the whole memory can be read
out at a single READ instruction. The address counter rolls over to 0 when the highest address has been reached.
The sequence of issuing READ instruction is: CS# goes low→ sending READ instruction code→ 3-byte address on
SI→data out on SO→to end READ operation can use CS# to high at any time during data out. (see Figure 14)
(7) Read Data Bytes at Higher Speed (FAST_READ)
The FAST_READ instruction is for quickly reading data out. The address is latched on rising edge of SCLK, and
data of each bit shifts out on the falling edge of SCLK at a maximum frequency fC. The first address can be at any
location. The address is automatically increased to the next higher address after each byte data is shifted out, so
the whole memory can be read out at a single FAST_READ instruction. The address counter rolls over to 0 when
the highest address has been reached.
The sequence of issuing FAST_READ instruction is: CS# goes low→sending FAST_READ instruction code→
3-byte address on SI→1-dummy byte address on SI→data out on SO→ to end FAST_READ operation can use CS#
to high at any time during data out. (see Figure 15)
While Program/Erase/Write Status Register cycle is in progress, FAST_READ instruction is rejected without any im-
pact on the Program/Erase/Write Status Register current cycle.
(8) 2 x I/O Read Mode (2READ)
The 2READ instruction enable double throughput of Serial Flash in read mode. The address is latched on rising
edge of SCLK, and data of every two bits (interleave on 2 I/O pins) shift out on the falling edge of SCLK at a maxi-
mum frequency fT. The first address can be at any location. The address is automatically increased to the next high-
er address after each byte data is shifted out, so the whole memory can be read out at a single 2READ instruction.
The address counter rolls over to 0 when the highest address has been reached. Once writing 2READ instruction,
the following address/dummy/data out will perform as 2-bit instead of previous 1-bit.
The sequence of issuing 2READ instruction is: CS# goes low sending 2READ instruction 24-bit address inter-
→
→
leave on SIO1 & SIO0 4 dummy cycles on SIO1 & SIO0 data out interleave on SIO1 & SIO0 to end 2READ
→
→
→
operation can use CS# to high at any time during data out (see Figure 16 for 2 x I/O Read Mode Timing Waveform).
While Program/Erase/Write Status Register cycle is in progress, 2READ instruction is rejected without any impact
on the Program/Erase/Write Status Register current cycle.
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MX25L1633E
(9) 4 x I/O Read Mode (4READ)
The 4READ instruction enable quad throughput of Serial Flash in read mode. A Quad Enable (QE) bit of status
Register must be set to "1" before sending the 4READ instruction. The address is latched on rising edge of SCLK,
and data of every four bits (interleave on 4 I/O pins) shift out on the falling edge of SCLK at a maximum frequency
fQ. The first address can be at any location. The address is automatically increased to the next higher address af-
ter each byte data is shifted out, so the whole memory can be read out at a single 4READ instruction. The address
counter rolls over to 0 when the highest address has been reached. Once writing 4READ instruction, the following
address/dummy/data out will perform as 4-bit instead of previous 1-bit.
The sequence of issuing 4READ instruction is: CS# goes low sending 4READ instruction 24-bit address inter-
→
→
leave on SIO3, SIO2, SIO1 & SIO0 6 dummy cycles data out interleave on SIO3, SIO2, SIO1 & SIO0 to end
→
→
→
4READ operation can use CS# to high at any time during data out (see Figure 17 for 4 x I/O Read Mode Timing
Waveform).
Another sequence of issuing 4 READ instruction especially useful in random access is : CS# goes low sending
→
4 READ instruction 24-bit address interleave on SIO3, SIO2, SIO1 & SIO0 performance enhance toggling bit
→
→
P[7:0] 4 dummy cycles data out interleave on SIO3, SIO2, SIO1 and SIO0 till CS# goes high CS# goes low
→
→
→
(reduce 4 Read instruction) 24-bit random access address (see Figure 18 for 4x I/O read enhance performance
→
mode timing waveform).
In the performance-enhancing mode (Note of Figure. 18), P[7:4] must be toggling with P[3:0] ; likewise
P[7:0]=A5h,5Ah,F0h or 0Fh can make this mode continue and reduce the next 4READ instruction. Once P[7:4] is no
longer toggling with P[3:0]; likewise P[7:0]=FFh,00h,AAh or 55h. And afterwards CS# is raised or issuing FF com-
mand (CS# goes high → CS# goes low→sending 0xFF→CS# goes high) instead of no toggling, the system then
will escape from performance enhance mode and return to normal opertaion. In these cases, tSHSL=15ns(min) will
be specified.
While Program/Erase/Write Status Register cycle is in progress, 4READ instruction is rejected without any impact
on the Program/Erase/Write Status Register current cycle.
(10) Sector Erase (SE)
The Sector Erase (SE) instruction is for erasing the data of the chosen sector to be "1". The instruction is used for
any 4K-byte sector. A Write Enable (WREN) instruction must execute to set the Write Enable Latch (WEL) bit before
sending the Sector Erase (SE). Any address of the sector (see table 3) is a valid address for Sector Erase (SE) in-
struction. The CS# must go high exactly at the byte boundary (the eighth bit of last address byte been latched-in);
otherwise, the instruction will be rejected and not executed.
Address bits [Am-A12] (Am is the most significant address) select the sector address.
The sequence of issuing SE instruction is: CS# goes low→sending SE instruction code→3-byte address on SI
→CS# goes high. (see Figure 21)
The self-timed Sector Erase Cycle time (tSE) is initiated as soon as Chip Select (CS#) goes high. The Write in
Progress (WIP) bit still can be check out during the Sector Erase cycle is in progress. The WIP sets 1 during the
tSE timing, and sets 0 when Sector Erase Cycle is completed, and the Write Enable Latch (WEL) bit is reset. If the
page is protected by BP3, BP2, BP1, BP0 bits, the Sector Erase (SE) instruction will not be executed on the page.
P/N: PM1581
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(11) Block Erase (BE)
The Block Erase (BE) instruction is for erasing the data of the chosen block to be "1". The instruction is used for
64K-byte block erase operation. A Write Enable (WREN) instruction must execute to set the Write Enable Latch (WEL)
bit before sending the Block Erase (BE). Any address of the block (see table 3) is a valid address for Block Erase
(BE) instruction. The CS# must go high exactly at the byte boundary (the eighth bit of address byte been latched-
in); otherwise, the instruction will be rejected and not executed.
The sequence of issuing BE instruction is: CS# goes low →sending BE instruction code→3-byte address on SI
→CS# goes high. (see Figure 22)
The self-timed Block Erase Cycle time (tBE) is initiated as soon as Chip Select (CS#) goes high. The Write in
Progress (WIP) bit still can be check out during the Sector Erase cycle is in progress. The WIP sets 1 during the
tBE timing, and sets 0 when Sector Erase Cycle is completed, and the Write Enable Latch (WEL) bit is reset. If the
page is protected by BP3, BP2, BP1, BP0 bits, the Block Erase (BE) instruction will not be executed on the page.
(12) Chip Erase (CE)
The Chip Erase (CE) instruction is for erasing the data of the whole chip to be "1". A Write Enable (WREN) instruc-
tion must execute to set the Write Enable Latch (WEL) bit before sending the Chip Erase (CE). The CS# must go
high exactly at the byte boundary (the eighth bit of instruction code been latched-in), otherwise the instruction will be
rejected and not executed.
The sequence of issuing CE instruction is: CS# goes low→ sending CE instruction code→ CS# goes high. (see Fig-
ure 23)
The self-timed Chip Erase Cycle time (tCE) is initiated as soon as Chip Select (CS#) goes high. The Write in
Progress (WIP) bit still can be check out during the Chip Erase cycle is in progress. The WIP sets 1 during the tCE
timing, and sets 0 when Chip Erase Cycle is completed, and the Write Enable Latch (WEL) bit is reset. If the chip is
protected by BP3, BP2, BP1, BP0 bits, the Chip Erase (CE) instruction will not be executed. It will be only executed
when BP3, BP2, BP1, BP0 all set to "0".
(13) Page Program (PP)
The Page Program (PP) instruction is for programming the memory to be "0". A Write Enable (WREN) instruction
must execute to set the Write Enable Latch (WEL) bit before sending the Page Program (PP). The device programs
only the last 256 data bytes sent to the device. The last address byte (the 8 least significant address bits, A7-A0)
should be set to 0 for 256 bytes page program. If A7-A0 are not all zero, transmitted data that exceed page length
are programmed from the starting address (24-bit address that last 8 bit are all 0) of currently selected page. If the
data bytes sent to the device exceeds 256, the last 256 data byte is programmed at the request page and previous
data will be disregarded. If the data bytes sent to the device has not exceeded 256, the data will be programmed at
the request address of the page. There will be no effort on the other data bytes of the same page.
The sequence of issuing PP instruction is: CS# goes low→sending PP instruction code→3-byte address on SI→ at
least 1-byte on data on SI→ CS# goes high. (see Figure 19)
The CS# must be kept to low during the whole Page Program instruction cycle; The CS# must go high exactly at the
byte boundary( the eighth bit of data being latched in), otherwise the instruction will be rejected and will not be ex-
ecuted.
The self-timed Page Program Cycle time (tPP) is initiated as soon as Chip Select (CS#) goes high. The Write in
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Progress (WIP) bit still can be check out during the Page Program cycle is in progress. The WIP sets 1 during the
tPP timing, and sets 0 when Page Program Cycle is completed, and the Write Enable Latch (WEL) bit is reset. If the
page is protected by BP3, BP2, BP1, BP0 bits, the Page Program (PP) instruction will not be executed.
(14) 4 x I/O Page Program (4PP)
The Quad Page Program (4PP) instruction is for programming the memory to be "0". A Write Enable (WREN) in-
struction must execute to set the Write Enable Latch (WEL) bit and Quad Enable (QE) bit must be set to "1" before
sending the Quad Page Program (4PP). The Quad Page Programming takes four pins: SIO0, SIO1, SIO2, and
SIO3 as address and data input, which can improve programmer performance and the effectiveness of application
of lower clock less than 85MHz. For system with faster clock, the Quad page program cannot provide more actual
favors, because the required internal page program time is far more than the time data flows in. Therefore, we sug-
gest that while executing this command (especially during sending data), user can slow the clock speed down to
85MHz below. The other function descriptions are as same as standard page program.
The sequence of issuing 4PP instruction is: CS# goes low→sending 4PP instruction code→3-byte address on
SIO[3:0]→ at least 1-byte on data on SIO[3:0]→ CS# goes high. (see Figure 20)
(15) Deep Power-down (DP)
The Deep Power-down (DP) instruction is for setting the device on the minimizing the power consumption (to enter-
ing the Deep Power-down mode), the standby current is reduced from ISB1 to ISB2). The Deep Power-down mode
requires the Deep Power-down (DP) instruction to enter, during the Deep Power-down mode, the device is not ac-
tive and all Write/Program/Erase instruction are ignored. When CS# goes high, it's only in standby mode not deep
power-down mode. It's different from Standby mode.
The sequence of issuing DP instruction is: CS# goes low→sending DP instruction code→ CS# goes high. (see Fig-
ure 24)
Once the DP instruction is set, all instruction will be ignored except the Release from Deep Power-down mode (RDP)
and Read Electronic Signature (RES) instruction (those instructions allow the ID being reading out). When Power-
down, the deep power-down mode automatically stops, and when power-up, the device automatically is in standby
mode. For RDP instruction the CS# must go high exactly at the byte boundary (the latest eighth bit of instruction
code been latched-in); otherwise, the instruction will not executed. As soon as Chip Select (CS#) goes high, a delay
of tDP is required before entering the Deep Power-down mode.
(16) Release from Deep Power-down (RDP), Read Electronic Signature (RES)
The Release from Deep Power-down (RDP) instruction is terminated by driving Chip Select (CS#) High. When Chip
Select (CS#) is driven High, the device is put in the Stand-by Power mode. If the device was not previously in the
Deep Power-down mode, the transition to the Stand-by Power mode is immediate. If the device was previously in
the Deep Power-down mode, though, the transition to the Stand-by Power mode is delayed by tRES2, and Chip
Select (CS#) must remain High for at least tRES2(max), as specified in Table 10. AC Characteristics. Once in the
Stand-by Power mode, the device waits to be selected, so that it can receive, decode and execute instructions. The
RDP instruction is only for releasing from Deep Power Down Mode.
RES instruction is for reading out the old style of 8-bit Electronic Signature, whose values are shown as table of ID
Definitions in next page. This is not the same as RDID instruction. It is not recommended to use for new design. For
new design, please use RDID instruction.
The sequence is shown as Figure 25 and Figure 26. Even in Deep power-down mode, the RDP and RES are also
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MX25L1633E
allowed to be executed, only except the device is in progress of program/erase/write cycle; there's no effect on the
current program/erase/write cycle in progress.
The RES instruction is ended by CS# goes high after the ID been read out at least once. The ID outputs repeat-
edly if continuously send the additional clock cycles on SCLK while CS# is at low. If the device was not previously
in Deep Power-down mode, the device transition to standby mode is immediate. If the device was previously in
Deep Power-down mode, there's a delay of tRES2 to transit to standby mode, and CS# must remain to high at least
tRES2(max). Once in the standby mode, the device waits to be selected, so it can be receive, decode, and execute
instruction.
(17) Read Electronic Manufacturer ID & Device ID (REMS), (REMS2), (REMS4)
The REMS, REMS2 & REMS4 instruction is an alternative to the Release from Power-down/Device ID instruction
that provides both the JEDEC assigned manufacturer ID and the specific device ID. The REMS4 instruction is rec-
ommended to use for 4 I/O identification and REMS2 instruction is recommended to use for 2 I/O identification.
The REMS, REMS2 & REMS4 instruction is very similar to the Release from Power-down/Device ID instruction.
The instruction is initiated by driving the CS# pin low and shift the instruction code "90h" or "EFh" or "DFh" followed
by two dummy bytes and one bytes address (A7~A0). After which, the Manufacturer ID for Macronix (C2h) and the
Device ID are shifted out on the falling edge of SCLK with most significant bit (MSB) first as shown in Figure 27.
The Device ID values are listed in Table 7 of ID Definitions in next page. If the one-byte address is initially set to
01h, then the device ID will be read first and then followed by the Manufacturer ID. The Manufacturer and Device
IDs can be read continuously, alternating from one to the other. The instruction is completed by driving CS# high.
Table 7. ID Definitions
manufacturer ID
C2
memory type
memory density
15
RDID Command
RES Command
24
electronic ID
24
manufacturer ID
C2
device ID
24
REMS/REMS2/REMS4/
Command
(18) Enter Secured OTP (ENSO)
The ENSO instruction is for entering the additional 512-bit secured OTP mode. The additional 512-bit secured OTP
is independent from main array, which may use to store unique serial number for system identifier. After entering the
Secured OTP mode, and then follow standard read or program, procedure to read out the data or update data. The
Secured OTP data cannot be updated again once it is lock-down.
The sequence of issuing ENSO instruction is: CS# goes low→sending ENSO instruction to enter Secured OTP
mode→ CS# goes high.
Please note that WRSR/WRSCUR commands are not acceptable during the access of secure OTP region, once se-
curity OTP is lock down, only read related commands are valid.
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MX25L1633E
(19) Exit Secured OTP (EXSO)
The EXSO instruction is for exiting the additional 512-bit secured OTP mode.
The sequence of issuing EXSO instruction is: CS# goes low→sending EXSO instruction to exit Secured OTP
mode→CS# goes high.
(20) Read Security Register (RDSCUR)
The RDSCUR instruction is for reading the value of Security Register bits. The Read Security Register can be read
at any time (even in program/erase/write status register/write security register condition) and continuously.
The sequence of issuing RDSCUR instruction is : CS# goes low→ sending RDSCUR instruction → Security Regis-
ter data out on SO→CS# goes high.
The definition of the Security Register bits is as below:
Secured OTP Indicator bit. The Secured OTP indicator bit shows the chip is locked by factory before ex- factory or
not. When it is "0", it indicates non- factory lock; "1" indicates factory- lock.
Lock-down Secured OTP (LDSO) bit. By writing WRSCUR instruction, the LDSO bit may be set to "1" for custom-
er lock-down purpose. However, once the bit is set to "1" (lock-down), the LDSO bit and the 512-bit Secured OTP
area cannot be update any more. While it is in 512-bit secured OTP mode, main array access is not allowed.
Table 8. Security Register Definition
bit7
bit6
bit5
bit4
bit3
bit2
bit1
bit0
LDSO
(indicate if
lock-down
Secured OTP
indicator bit
x
x
x
x
x
x
0 = not lock-down
1 = lock-down
(cannot
program/erase
OTP)
0 = non-factory
lock
reserved
reserved
reserved
reserved
reserved
reserved
1 = factory
lock
volatile bit volatile bit volatile bit volatile bit volatile bit volatile bit
non-volatile bit
non-volatile bit
(21) Write Security Register (WRSCUR)
The WRSCUR instruction is for changing the values of Security Register Bits. Unlike write status register, the WREN
instruction is not required before sending WRSCUR instruction. The WRSCUR instruction may change the values
of bit1 (LDSO bit) for customer to lock-down the 512-bit Secured OTP area. Once the LDSO bit is set to "1", the Se-
cured OTP area cannot be updated any more.
The sequence of issuing WRSCUR instruction is :CS# goes low→sending WRSCUR instruction→CS# goes high.
The CS# must go high exactly at the boundary; otherwise, the instruction will be rejected and not executed.
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MX25L1633E
POWER-ON STATE
The device is at below states when power-up:
- Standby mode ( please note it is not deep power-down mode)
- Write Enable Latch (WEL) bit is reset
The device must not be selected during power-up and power-down stage unless the VCC achieves below correct
level:
- VCC minimum at power-up stage and then after a delay of tVSL
- GND at power-down
Please note that a pull-up resistor on CS# may ensure a safe and proper power-up/down level.
An internal power-on reset (POR) circuit may protect the device from data corruption and inadvertent data change
during power up state.
For further protection on the device, if the VCC does not reach the VCC minimum level, the correct operation is not
guaranteed. The read, write, erase, and program command should be sent after the below time delay:
- tVSL after VCC reached VCC minimum level
The device can accept read command after VCC reached VCC minimum and a time delay of tVSL.
Please refer to the figure of "power-up timing".
Note:
- To stabilize the VCC level, the VCC rail decoupled by a suitable capacitor close to package pins is recommend-
ed. (generally around 0.1uF)
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MX25L1633E
ELECTRICAL SPECIFICATIONS
Absolute Maximum Ratings
Rating
Value
Ambient Operating Temperature
Storage Temperature
Applied Input Voltage
Applied Output Voltage
VCC to Ground Potential
Industrial grade
-40°C to 85°C
-65°C to 150°C
-0.5V to 4.6V
-0.5V to 4.6V
-0.5V to 4.6V
NOTICE:
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to
the device. This is stress rating only and functional operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended period may affect reliability.
2. Specifications contained within the following tables are subject to change.
3. During voltage transitions, all pins may overshoot Vss to -2.0V and Vcc to +2.0V for periods up to 20ns, see Figure 2,
and Figure 3.
Figure 3. Maximum Positive Overshoot Waveform
Figure 2. Maximum Negative Overshoot Waveform
20ns
20ns
20ns
Vss
Vcc + 2.0V
Vss-2.0V
Vcc
20ns
20ns
20ns
Capacitance
TA = 25°C, f = 1.0 MHz
SYMBOL PARAMETER
CIN Input Capacitance
COUT Output Capacitance
MIN.
TYP
MAX.
UNIT
pF
CONDITIONS
VIN = 0V
6
8
pF
VOUT = 0V
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MX25L1633E
Figure 4. Input Test Waveforms and Measurement Level
Input timing reference level
Output timing reference level
0.8VCC
0.7VCC
AC
Measurement
Level
0.5VCC
0.3VCC
0.2VCC
Note: Input pulse rise and fall time are <5ns
Figure 5. Output Loading
DEVICE UNDER
TEST
2.7K ohm
+3.3V
CL
6.2K ohm
DIODES=IN3064
OR EQUIVALENT
CL=30pF Including jig capacitance
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MX25L1633E
Table 9. DC Characteristics
Temperature = -40 C to 85 C for Industrial grade, VCC = 2.7V ~ 3.6V
°
°
SYMBOL PARAMETER
NOTES
MIN.
TYP.
MAX. UNITS TEST CONDITIONS
VCC = VCC Max,
VIN = VCC or GND
ILI
Input Load Current
Output Leakage Current
1
± 2
± 2
25
uA
uA
uA
uA
VCC = VCC Max,
VOUT = VCC or GND
ILO
1
1
VIN = VCC or GND,
CS# = VCC
ISB1 VCC Standby Current
15
2
Deep Power-down
Current
VIN = VCC or GND,
CS# = VCC
ISB2
20
f=104MHz,
fQ=85MHz (4 x I/O read)
SCLK=0.1VCC/0.9VCC,
SO=Open
25
mA
fT=85MHz (2 x I/O read)
mA SCLK=0.1VCC/0.9VCC,
ICC1 VCC Read
1
1
20
10
SO=Open
f=33MHz,
mA SCLK=0.1VCC/0.9VCC,
SO=Open
VCC Program Current
Program in Progress,
CS# = VCC
ICC2
(PP)
15
3
20
20
20
20
mA
VCC Write Status
ICC3
Program status register in
mA
Register (WRSR) Current
progress, CS#=VCC
VCC Sector Erase
Current (SE)
ICC4
1
1
9
mA Erase in Progress, CS#=VCC
mA Erase in Progress, CS#=VCC
VCC Chip Erase Current
ICC5
(CE)
15
VIL
VIH
VOL
Input Low Voltage
Input High Voltage
Output Low Voltage
-0.5
0.3VCC
VCC+0.4
0.4
V
V
0.7VCC
V
V
IOL = 1.6mA
IOH = -100uA
VOH Output High Voltage
VCC-0.2
Notes :
1. Typical values at VCC = 3.3V, T = 25 C. These currents are valid for all product versions (package and speeds).
°
2. Typical value is calculated by simulation.
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MX25L1633E
Table 10. AC Characteristics
Temperature = -40 C to 85 C for Industrial grade, VCC = 2.7V ~ 3.6V
°
°
Symbol Alt. Parameter
Clock Frequency for the following instructions:
Min.
Typ.
Max.
Unit
fSCLK
fC FAST_READ, SE, BE, CE, DP, RES, RDP,
WREN, WRDI, RDID, RDSR, WRSR
D.C.
104
MHz
fP Clock Frequency for PP instructions
f4P Clock Frequency for 4PP instructions
fR Clock Frequency for READ instructions
fT Clock Frequency for 2READ instructions
fQ Clock Frequency for 4READ instructions
D.C.
D.C.
86
85
33
85
85
MHz
MHz
MHz
MHz
MHz
ns
ns
ns
ns
V/ns
V/ns
ns
ns
ns
fPSCLK
fRSCLK
fTSCLK
fC=104MHz
fR=33MHz
fC=104MHz
fR=33MHz
4.7
13
4.7
13
0.1
0.1
5
tCH(1) tCLH Clock High Time (1633E-10G)
tCL(1)
tCLL Clock Low Time (1633E-10G)
tCLCH(2)
tCHCL(2)
Clock Rise Time (3) (peak to peak)
Clock Fall Time (3) (peak to peak)
tSLCH tCSS CS# Active Setup Time (relative to SCLK)
tCHSL CS# Not Active Hold Time (relative to SCLK)
tDVCH tDSU Data In Setup Time
5
2
tCHDX
tCHSH
tSHCH
tDH Data In Hold Time
5
5
5
15
50
ns
ns
ns
ns
ns
ns
ns
CS# Active Hold Time (relative to SCLK)
CS# Not Active Setup Time (relative to SCLK)
Read
tSHSL(3) tCSH CS# Deselect Time
Write/Erase/Program
2.7V-3.6V
3.0V-3.6V
10
8
tSHQZ(2) tDIS Output Disable Time
2.7V-3.6V
9/8
8/6
ns
Clock Low to Output Valid
tCLQV
tV
Loading: 30pF/15pF
tHO Output Hold Time
Write Protect Setup Time
3.0V-3.6V
ns
ns
ns
ns
tCLQX
tWHSL
tSHWL
tDP(2)
1
20
100
Write Protect Hold Time
CS# High to Deep Power-down Mode
10
us
CS# High to Standby Mode without Electronic Signature
Read
tRES1(2)
8.8
us
tRES2(2)
tW
CS# High to Standby Mode with Electronic Signature Read
Write Status Register Cycle Time
Byte-Program
Page Program Cycle Time
Sector Erase Cycle Time
8.8
100
50
3
200
2
us
ms
us
ms
ms
s
40
9
0.6
40
0.4
5
tBP
tPP
tSE
tBE
Block Erase Cycle Time
Chip Erase Cycle Time
tCE
20
s
Notes:
1. tCH + tCL must be greater than or equal to 1/ f (fC or fR).
2. Value guaranteed by characterization, not 100% tested in production.
3. tSHSL=15ns from read instruction, tSHSL=50ns from Write/Erase/Program instruction.
4. Only applicable as a constraint for a WRSR instruction when SRWD is set at 1.
5. Test condition is shown as Figure 4 and Figure 5.
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MX25L1633E
Timing Analysis
Figure 6. Serial Input Timing
tSHSL
tSHCH
tCHCL
CS#
tCHSL
tSLCH
tCHSH
SCLK
tDVCH
tCHDX
tCLCH
MSB
LSB
SI
High-Z
SO
Figure 7. Output Timing
CS#
tCH
SCLK
tCLQV
tCLQV
tCL
tSHQZ
tCLQX
SO
tCLQX
LSB
ADDR.LSB IN
SI
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MX25L1633E
Figure 8. WP# Setup Timing and Hold Timing during WRSR when SRWD=1
WP#
tSHWL
tWHSL
CS#
0
1
2
3
4
5
6
7
8
9
10 11 12
13 14
15
SCLK
01
SI
High-Z
SO
Figure 9. Write Enable (WREN) Sequence (Command 06)
CS#
0
1
2
3
4
5
6
7
SCLK
Command
06
SI
High-Z
SO
Figure 10. Write Disable (WRDI) Sequence (Command 04)
CS#
0
1
2
3
4
5
6
7
SCLK
Command
04
SI
High-Z
SO
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MX25L1633E
Figure 11. Read Identification (RDID) Sequence (Command 9F)
CS#
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15 16 17 18
28 29 30 31
SCLK
SI
Command
9F
Manufacturer Identification
Device Identification
High-Z
SO
7
6
5
3
2
1
0
15 14 13
MSB
3
2
1
0
MSB
Figure 12. Read Status Register (RDSR) Sequence (Command 05)
CS#
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
SCLK
SI
command
05
Status Register Out
Status Register Out
High-Z
SO
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
7
MSB
MSB
Figure 13. Write Status Register (WRSR) Sequence (Command 01)
CS#
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15
SCLK
command
01
Status
Register In
SI
7
6
5
4
3
2
0
1
MSB
High-Z
SO
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MX25L1633E
Figure 14. Read Data Bytes (READ) Sequence (Command 03)
CS#
0
1
2
3
4
5
6
7
8
9
10
28 29 30 31 32 33 34 35 36 37 38 39
SCLK
command
03
24-Bit Address
23 22 21
MSB
3
2
1
0
SI
Data Out 1
Data Out 2
High-Z
2
7
6
5
4
3
1
7
0
SO
MSB
Figure 15. Read at Higher Speed (FAST_READ) Sequence (Command 0B)
CS#
0
1
2
3
4
5
6
7
8
9
10
28 29 30 31
SCLK
Command
0B
24 BIT ADDRESS
SI
23 22 21
3
2
1
0
High-Z
SO
CS#
47
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46
SCLK
Configurable
Dummy Cycle
7
6
5
4
3
2
0
1
SI
DATA OUT 2
DATA OUT 1
7
6
5
4
3
2
1
0
7
7
6
5
4
3
2
0
1
SO
MSB
MSB
MSB
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MX25L1633E
Figure 16. 2 x I/O Read Mode Sequence (Command BB)
CS#
0
1
2
3
4
5
6
7
8
9
10 11
18 19 20 21 22 23 24 25 26 27
SCLK
4 dummy
cycle
8 Bit Instruction
12 BIT Address
Data Output
data
address
bit22, bit20, bit18...bit0
BB(hex)
P2 P0
SI/SIO0
bit6, bit4, bit2...bit0, bit6, bit4....
High Impedance
address
bit23, bit21, bit19...bit1
data
P3 P1
SO/SIO1
bit7, bit5, bit3...bit1, bit7, bit5....
Note:
1. SI/SIO0 or SO/SIO1 should be kept "00" or "11" in the first 2 dummy cycles.
In other words, P2=P0 or P3=P1 is necessary.
Figure 17. 4 x I/O Read Mode Sequence (Command EB)
CS#
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15 16 17 18 19 20 21 22 23
n
SCLK
4 dummy
cycles
8 Bit Instruction
6 Address cycles
Data Output
Performance
enhance
indicator (Note)
data
address
P4 P0
P5 P1
P6 P2
P7 P3
EB(hex)
SI/SIO0
bit4, bit0, bit4....
bit20, bit16..bit0
High Impedance
High Impedance
High Impedance
address
bit21, bit17..bit1
data
bit5 bit1, bit5....
SO/SIO1
WP#/SIO2
NC/SIO3
address
bit22, bit18..bit2
data
bit6 bit2, bit6....
address
bit23, bit19..bit3
data
bit7 bit3, bit7....
Notes:
1. Hi-impedance is inhibited for the two clock cycles.
2. P7≠P3, P6≠P2, P5≠P1 & P4≠P0 (Toggling) is inhibited.
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MX25L1633E
Figure 18. 4 x I/O Read enhance performance Mode Sequence (Command EB)
CS#
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15 16 17 18 19 20 21 22 23
n
SCLK
4 dummy
cycles
8 Bit Instruction
6 Address cycles
Data Output
Performance
enhance
indicator (Note)
data
address
P4 P0
P5 P1
P6 P2
P7 P3
EB(hex)
SI/SIO0
bit4, bit0, bit4....
bit20, bit16..bit0
High Impedance
High Impedance
High Impedance
address
bit21, bit17..bit1
data
bit5 bit1, bit5....
SO/SIO1
WP#/SIO2
NC/SIO3
address
bit22, bit18..bit2
data
bit6 bit2, bit6....
address
bit23, bit19..bit3
data
bit7 bit3, bit7....
CS#
n+1
...........
n+7......n+9 ........... n+13
...........
SCLK
4 dummy
cycles
6 Address cycles
Data Output
Performance
enhance
indicator (Note)
data
address
P4 P0
P5 P1
P6 P2
P7 P3
SI/SIO0
bit4, bit0, bit4....
bit20, bit16..bit0
address
bit21, bit17..bit1
data
bit5 bit1, bit5....
SO/SIO1
WP#/SIO2
NC/SIO3
address
bit22, bit18..bit2
data
bit6 bit2, bit6....
address
bit23, bit19..bit3
data
bit7 bit3, bit7....
Note: Performance enhance mode, if P7=P3 & P6=P2 & P5=P1 & P4=P0 (Toggling), ex: A5, 5A, 0F
Reset the performance enhance mode, if P7=P3 or P6=P2 or P5=P1 or P4=P0, ex: AA, 00, FF
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MX25L1633E
Figure 19. Page Program (PP) Sequence (Command 02)
CS#
0
1
2
3
4
5
6
7
8
9
10
28 29 30 31 32 33 34 35 36 37 38 39
SCLK
Command
02
24-Bit Address
Data Byte 1
23 22 21
MSB
3
2
1
0
7
6
5
4
3
2
0
1
SI
MSB
CS#
40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55
SCLK
Data Byte 2
Data Byte 3
Data Byte 256
7
6
5
4
3
2
0
7
6
5
4
3
2
0
7
6
5
4
3
2
0
1
1
1
SI
MSB
MSB
MSB
Figure 20. 4 x I/O Page Program (4PP) Sequence (Command 38)
CS#
10 11 12 13 14 15 16 17 18 19 20 21
Data Data Data Data
0
1
2
3
4
5
6
7
8
9
SCLK
Command
38
6 Address cycle
Byte 1 Byte 2 Byte 3 Byte 4
16 12
8
9
4
0
20
4
0
4
0
4
0
4
0
SI/SIO0
21 17 13
5
6
7
1
2
3
SO/SIO1
WP#/SIO2
NC/SIO3
5
6
7
1
2
3
5
6
7
1
2
3
5
6
7
1
2
3
5
6
7
1
2
3
22 18 14 10
23 19 15 11
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MX25L1633E
Figure 21. Sector Erase (SE) Sequence (Command 20)
CS#
0
1
2
3
4
5
6
7
8
9
29 30 31
SCLK
Command
20
24 Bit Address
SI
23 22
MSB
2
1
0
Note: SE command is 20(hex).
Figure 22. Block Erase (BE) Sequence (Command D8)
CS#
0
1
2
3
4
5
6
7
8
9
29 30 31
SCLK
Command
D8
24 Bit Address
SI
23 22
MSB
2
0
1
Note: BE command is D8(hex).
Figure 23. Chip Erase (CE) Sequence (Command 60 or C7)
CS#
0
1
2
3
4
5
6
7
SCLK
SI
Command
60 or C7
Note: CE command is 60(hex) or C7(hex).
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MX25L1633E
Figure 24. Deep Power-down (DP) Sequence (Command B9)
CS#
t
DP
0
1
2
3
4
5
6
7
SCLK
SI
Command
B9
Stand-by Mode
Deep Power-down Mode
Figure 25. RDP and Read Electronic Signature (RES) Sequence (Command AB)
CS#
0
1
2
3
4
5
6
7
8
9
10
28 29 30 31 32 33 34 35 36 37 38
SCLK
Command
AB
t
3 Dummy Bytes
RES2
SI
23 22 21
MSB
3
2
1
0
Electronic Signature Out
High-Z
7
6
5
4
3
2
0
1
SO
MSB
Deep Power-down Mode
Stand-by Mode
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MX25L1633E
Figure 26. Release from Deep Power-down (RDP) Sequence (Command AB)
CS#
t
RES1
0
1
2
3
4
5
6
7
SCLK
Command
AB
SI
High-Z
SO
Deep Power-down Mode
Stand-by Mode
Figure 27. Read Electronic Manufacturer & Device ID (REMS) Sequence (Command 90 or EF or DF)
CS#
0
1
2
3
4
5
6
7
8
9 10
SCLK
Command
90
2 Dummy Bytes
SI
15 14 13
3
2
1
0
High-Z
SO
CS#
47
28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46
SCLK
ADD (1)
7
6
5
4
3
2
0
1
SI
Manufacturer ID
Device ID
7
6
5
4
3
2
1
0
7
7
6
5
4
3
2
0
1
X
SO
MSB
MSB
MSB
Notes:
(1) ADD=00H will output the manufacturer's ID first and ADD=01H will output device ID first.
(2) Instruction is either 90(hex) or EF(hex) or DF(hex).
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MX25L1633E
Figure 28. Power-up Timing
V
CC
V
(max)
CC
Chip Selection is Not Allowed
V
(min)
CC
tVSL
Device is fully
accessible
time
Note: VCC (max.) is 3.6V and VCC (min.) is 2.7V.
Table 11. Power-Up Timing
Symbol
Parameter
Min.
Max.
Unit
tVSL(1)
VCC(min) to CS# low
200
us
Note: 1. The parameter is characterized only.
Initial Delivery State
The device is delivered with the memory array erased: all bits are set to 1 (each byte contains FFh). The Status
Register contains 00h (all Status Register bits are 0).
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MX25L1633E
OPERATING CONDITIONS
At Device Power-Up and Power-Down
AC timing illustrated in Figure 29 and Figure 30 are for the supply voltages and the control signals at device power-
up and power-down. If the timing in the figures is ignored, the device will not operate correctly.
During power-up and power-down, CS# needs to follow the voltage applied on VCC to keep the device not to be
selected. The CS# can be driven low when VCC reach Vcc(min.) and wait a period of tVSL.
Figure 29. AC Timing at Device Power-Up
VCC(min)
VCC
GND
tVR
tSHSL
CS#
tSHCH
tSLCH
tCHSL
tCHSH
SCLK
tDVCH
tCHCL
tCHDX
tCLCH
MSB IN
LSB IN
SI
High Impedance
SO
Symbol
tVR
Parameter
VCC Rise Time
Notes
Min.
5
Max.
500000
Unit
us/V
1
Notes:
1. The value is guaranteed by characterization, not 100% tested in production.
2. For AC spec tCHSL, tSLCH, tDVCH, tCHDX, tSHSL, tCHSH, tSHCH, tCHCL, tCLCH in the figure, please refer to
"AC CHARACTERISTICS" table.
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MX25L1633E
Figure 30. Power-Down Sequence
During power-down, CS# needs to follow the voltage drop on VCC to avoid mis-operation.
VCC
CS#
SCLK
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REV. 1.8, NOV. 08, 2013
41
MX25L1633E
ERASE AND PROGRAMMING PERFORMANCE
PARAMETER
Min.
TYP. (1)
Max. (2)
UNIT
ms
ms
s
Write Status Register Cycle Time
Sector Erase Cycle Time
Block Erase Cycle Time
40
40
100
200
2
0.4
Chip Erase Cycle Time
5
20
50
3
s
Byte Program Time (via page program command)
Page Program Cycle Time
Erase/Program Cycle
9
us
0.6
ms
cycles
100,000
Notes:
1. Typical program and erase time assumes the following conditions: 25 C, 3.3V, and checker board pattern.
°
2. Under worst conditions of 85 C and 2.7V.
°
3. System-level overhead is the time required to execute the first-bus-cycle sequence for the programming com-
mand.
DATA RETENTION
PARAMETER
Condition
Min.
Max.
UNIT
Data retention
55˚C
20
years
LATCH-UP CHARACTERISTICS
MIN.
MAX.
Input Voltage with respect to GND on all power pins, SI, CS#
Input Voltage with respect to GND on SO
Current
-1.0V
-1.0V
2 VCCmax
VCC + 1.0V
+100mA
-100mA
Includes all pins except VCC. Test conditions: VCC = 3.0V, one pin at a time.
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MX25L1633E
ORDERING INFORMATION
CLOCK
(MHz)
PART NO.
MX25L1633EZNI-10G
MX25L1633EZUI-10G
MX25L1633EM2I-10G
TEMPERATURE
-40 C~85 C
PACKAGE
Remark
8-WSON
(6x5mm)
8-USON
(4x4mm)
8-SOP
104
104
104
RoHS Compliant
RoHS Compliant
RoHS Compliant
°
°
-40 C~85 C
°
°
-40 C~85 C
°
°
(200mil)
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MX25L1633E
PART NAME DESCRIPTION
MX 25 L 1633E ZN
I
10 G
OPTION:
G: RoHS Compliant
SPEED:
10: 104MHz
TEMPERATURE RANGE:
I: Industrial (-40°C to 85°C)
PACKAGE:
ZN: 6mm x 5mm WSON
ZU: 4mm x 4mm USON
M2: 200mil 8-SOP
DENSITY & MODE:
1633E: 16Mb standard type
TYPE:
L: 3V
DEVICE:
25: Serial Flash
P/N: PM1581
REV. 1.8, NOV. 08, 2013
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MX25L1633E
PACKAGE INFORMATION
P/N: PM1581
REV. 1.8, NOV. 08, 2013
45
MX25L1633E
P/N: PM1581
REV. 1.8, NOV. 08, 2013
46
MX25L1633E
P/N: PM1581
REV. 1.8, NOV. 08, 2013
47
MX25L1633E
REVISION HISTORY
Revision No. Description
Page
Date
0.01
1. Added 4 x I/O=80MHz @VCC=3.0V~3.6V
P5, 27, 28 JUN/21/2010
2. Revised Storage Temperature
P25
0.02
1. Changed title from "Advanced Information" to "Preliminary"
P5
AUG/02/2010
1.0
1. Changed Clock Rate
P5, 27, 28 AUG/31/2010
2 x I/O Read = From 75 MHz to 85MHz
4 x I/O Read = From 75 MHz to 85MHz
2. Removed 16 pin SOP
P6, 8, 43, 44
3. Removed the title "Preliminary"
P5
1.1
1. Changed tVR(min.) from 20us/V to 5us/V
2. Modified description for RoHS compliance
P40
P6,43,44
NOV/18/2010
1.2
1.3
1.4
1. Updated 4PP program frequency
P21,28
APR/26/2011
JUN/14/2011
AUG/08/2012
1. Revised tCLQV spec from 10ns@30pF loading to 9ns@30pF loading. P28
1. Modified WEL bit description
2. Modified Test Conditions of ILO
P16
P27
1.5
1. Added 8-USON 4x4mm package solution
P6,8,43,44, NOV/08/2012
P46
1.6
1. Modified tCLQX spec. in AC Characteristics Table
1. Removed Advanced Information from MX25L1633EZUI-10G
P28
DEC/12/2012
1.7
P43
JAN/09/2013
1.8
1. Updated parameters for DC Characteristics.
2. Updated Erase and Programming Performance.
3. Updated package information
P5,27
NOV/08/2013
P5,27~28,42
P45~46
P5
4. Updated feature descriptions
P/N: PM1581
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MX25L1633E
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tradename thereof, such as Macronix, MXIC, MXIC Logo, MX Logo, Integrated Solutions Provider, NBit, Nbit,
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MACRONIX INTERNATIONAL CO., LTD. reserves the right to change product and specifications without notice.
49
相关型号：
MX25L1635DZNI-10G
Flash, 4MX4, PDSO8, 6 X 5 MM, 0.80 MM HEIGHT, ROHS COMPLIANT, MO-220, WSON-8
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