MBR30040CT [NAINA]
Silicon Schottky Diode, 300A; 硅肖特基二极管, 300A型号: | MBR30040CT |
厂家: | NAINA SEMICONDUCTOR LTD. |
描述: | Silicon Schottky Diode, 300A |
文件: | 总2页 (文件大小:136K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MBR30020CT thru
MBR30040CTR
Naina Semiconductor Ltd.
Silicon Schottky Diode, 300A
Features
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•
•
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Guard Ring Protection
Low forward voltage drop
High surge current capability
Up to 100V VRRM
TWIN TOWER PACKAGE
Maximum Ratings (TJ = 25oC unless otherwise specified)
MBR30020CT MBR30030CT MBR30035CT MBR30040CT
Parameter
Symbol
Conditions
Units
(R)
(R)
(R)
(R)
Repetitive peak
reverse voltage
VRRM
20
30
35
40
V
RMS reverse voltage
DC blocking voltage
VRMS
VDC
14
20
21
30
25
35
28
40
V
V
Average forward
current
IF(AV)
TC ≤ 140 oC
300
300
300
300
A
Non-repetitive
forward surge
current, half sine-
wave
TC = 25 oC
tp = 8.3 ms
IFSM
2500
2500
2500
2500
A
Electrical Characteristics (TJ = 25oC unless otherwise specified)
MBR30020CT MBR30030CT MBR30035CT MBR30040CT
Parameter
Symbol
Conditions
Units
(R)
(R)
(R)
(R)
IF = 150 A
TJ = 25 oC
DC forward voltage
VF
0.68
0.68
0.68
0.68
V
VR = 20 V
TJ = 25 oC
8
8
8
8
DC reverse current
IR
mA
VR = 20 V
TJ = 125oC
200
200
200
200
Thermal Characteristics (TJ = 25oC unless otherwise specified)
MBR30020CT MBR30030CT MBR30035CT MBR30040CT
Parameter
Symbol
Units
oC/W
oC
(R)
(R)
(R)
(R)
Thermal resistance
junction to case
RthJ-C
0.4
0.4
0.4
0.4
Operating, storage
temperature range
- 40 to +175
- 40 to +175
- 40 to +175
- 40 to +175
TJ , Tstg
1
D-95, Sector 63, Noida – 201301, India
•
Tel: 0120-4205450
•
Fax: 0120-4273653
sales@nainasemi.com
•
www.nainasemi.com
MBR30020CT thru
MBR30040CTR
Naina Semiconductor Ltd.
Package Outline
ALL DIMENSIONS IN MM
Ordering Table
MBRP
300
20
CT
1
2
3
4
1 – Device Type
MBR = Schottky Barrier Diode Module
>
2 – Current Rating = IF(AV)
3 – Voltage = VRRM
4 – Polarity
>
>
CT = Normal (Cathode to Base)
CTR = Reverse (Anode to Base)
2
D-95, Sector 63, Noida – 201301, India
•
Tel: 0120-4205450
•
Fax: 0120-4273653
sales@nainasemi.com
•
www.nainasemi.com
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