N02M0818L2AD [NANOAMP]
2Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx8 bit; 2MB超低功耗异步医疗CMOS SRAM 256Kx8位
| 型号： | N02M0818L2AD |
| 厂家： | 
NANOAMP SOLUTIONS, INC. |
| 描述： | 2Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx8 bit |
| 文件： | 总8页 (文件大小：216K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NanoAmp Solutions, Inc.
670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035
ph: 408-935-7777, FAX: 408-935-7770
www.nanoamp.com
N02M0818L2A
2Mb Ultra-Low Power Asynchronous Medical CMOS SRAM
256Kx8 bit
Overview
Features
The N02M0818L2A is an integrated memory
device intended for implanted life-support (Class 3)
medical applications. This device comprises a 2
Mbit Static Random Access Memory organized as
262,144 words by 8 bits. The device is designed
and fabricated using NanoAmp’s advanced CMOS
technology with reliability inhancements for
• Single Wide Power Supply Range
1.3 to 2.3 Volts
• Very low standby current
200nA typical at 2.1V and 37 deg C
• Very low operating current
1 mA at 2.0V and 1µs (Typical)
medical users. The base design is the same as
NanoAmp’s N02M0818L1A, which is intended for
non life-support (Class 1 and 2) medical
• Very low Page Mode operating current
0.5mA at 1.0V and 1µs (Typical)
• Simple memory control
applications. The device operates with two chip
enable (CE1 and CE2) controls and output enable
(OE) to allow for easy memory expansion. The
N02M0818L2A is optimal for various applications
where low-power is critical such as implanted
pacemaker devices. The device can operate over a
Dual Chip Enables (CE1 and CE2)
Output Enable (OE) for memory expansion
• Low voltage data retention
Vcc = 1.0V
• Automatic power down to standby mode
• TTL compatible three-state output driver
o
o
very wide temperature range of -20 C to +60 C
and is available in die form as well as in JEDEC
standard packages compatible with other standard
256Kb x 8 SRAMs
Product Family
Standby
Current
Operating
Current (Icc),
Max
Operating
Power
Part Number
Package Type
Speed
Temperature Supply (Vcc)
(ISB
)
N02M0818L2AN
32 - STSOP I
100ns @ 1.65V 450nA @
-20oC to +60oC
1.3V - 2.3V
2.5 mA @ 1MHz
500ns @ 1.3V
2.3V
N02M0818L2AD Known Good Die
Pin Configuration
Pin Descriptions
Pin Name
A0-A17
WE
CE1, CE2
OE
I/O0-I/O7
VCC
VSS
Pin Function
Address Inputs
Write Enable Input
Chip Enable Input
Output Enable Input
Data Inputs/Outputs
A11
A9
1
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE
2
A10
CE1
I/O7
I/O6
I/O5
I/O4
I/O3
Vss
I/O2
I/O1
I/O0
A0
A8
3
A13
WE
CE2
A15
Vcc
A17
A16
A14
A12
A7
4
5
6
7
N02M0818L2A
STSOP
8
9
Power
Ground
10
11
12
13
14
15
16
A6
A1
A5
A2
A4
A3
(DOC#14-02-036 Rev C ECN#01-0887)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
1
NanoAmp Solutions, Inc.
Functional Block Diagram
N02M0818L2A
V
CCQ(opt)
Word
Address
Inputs
Address
A - A
Decode
Logic
0
3
Input/
Output
Mux
Page
Address
Decode
Logic
16K Page
x 16 word
x 8 bit
Address
Inputs
A - A
4
17
and
I/O - I/O
0
7
Buffers
RAM
CE1
CE2
WE
OE
Control
Logic
Functional Description
I/O0 - I/O7
CE1
CE2
WE
OE
MODE
POWER
Standby1
Standby1
Write2
H
X
L
L
L
X
L
X
X
L
X
X
X2
L
H
High Z
High Z
Standby
Standby
Active
H
H
H
Data In
Data Out
High Z
H
H
Active
Active
Read
Active
1. When the device is in standby mode, control inputs (WE and OE), address inputs and data input/outputs are internally isolated
from any external influence and disabled from exerting any influence externally.
2. When WE is invoked, the OE input is internally disabled and has no effect on the circuit.
1
Capacitance
Item
Symbol
CIN
Test Condition
Min
Max
8
Unit
pF
VIN = 0V, f = 1 MHz, TA = 25oC
VIN = 0V, f = 1 MHz, TA = 25oC
Input Capacitance
I/O Capacitance
CI/O
8
pF
1. These parameters are verified in device characterization and are not 100% tested
(DOC#14-02-036 Rev C ECN#01-0887)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
2
NanoAmp Solutions, Inc.
N02M0818L2A
1
Absolute Maximum Ratings
Item
Symbol
VIN,OUT
VCC
Rating
–0.3 to VCC+0.3
–0.3 to 3.0
500
Unit
V
Voltage on any pin relative to VSS
Voltage on VCC Supply Relative to VSS
Power Dissipation
V
PD
mW
oC
oC
oC
TSTG
Storage Temperature
–40 to 125
TA
Operating Temperature
-20 to +60
240oC, 10sec(Lead only)
TSOLDER
Soldering Temperature and Time
1. Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the operating section of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
1
Recommended Operating Limits (Not all inclusive values tested)
Item
Symbol
VCC
VDR
VIH
Test Conditions
Min.
1.3
Max
Unit
V
Core Supply Voltage
Data Retention Voltage
Input High Voltage
Input Low Voltage
2.3
Chip Disabled (Note 3)
1.0
V
0.7VCCQ VCCQ+0.5
V
VIL
0.3VCCQ
–0.5
V
VOH
VOL
ILI
IOH = 0.2mA
IOL = -0.2mA
VCCQ–0.3
Output High Voltage
Output Low Voltage
Input Leakage Current
Output Leakage Current
V
0.3
0.1
0.1
V
VIN = 0 to VCC
µA
µA
ILO
OE = VIH or Chip Disabled
VCC=2.3 V, VIN=VIH or VIL
Chip Enabled, IOUT = 0
Read/Write Operating Supply Current
ICC1
ICC2
2.5
mA
mA
@ 1 µs Cycle Time2
VCC=2.3 V, VIN=VIH or VIL
Chip Enabled, IOUT = 0
Read/Write Operating Supply Current
@ 85 ns Cycle Time2
13.0
VIN = VCC or 0V
Chip Disabled
Standby Current3
ISB1
450
nA
tA= 37oC, VCC = 2.3 V
VCC = 1.0V, VIN = VCC or 0
Chip Disabled, tA= 85oC
Data Retention Current3
IDR
1.0
µA
1. These limits are the expected operating conditions for this device. Only selected points within this range of conditions
are specifically tested and guaranteed.
2. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add current
required to drive output capacitance expected in the actual system.
3. The chip is Disabled when CE1# is high or CE2 is low or UB# and LB# are high. The chip is Enabled when CE1# is
low and CE2 is high.
(DOC#14-02-036 Rev C ECN#01-0887)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
3
NanoAmp Solutions, Inc.
N02M0818L2A
Recommended Timing Limits - Read Cycle (Not all inclusive values tested)
1.3 - 2.3 V
1.65 - 2.3 V
Item
Symbol
Units
Min.
Max.
Min.
Max.
tRC
tAA
Read Cycle Time
500
100
ns
ns
ns
ns
ns
ns
ns
ns
ns
Address Access Time
500
500
200
100
100
50
tCO
tOE
tLZ
Chip Enable to Valid Output
Output Enable to Valid Output
Chip Enable to Low-Z output
Output Enable to Low-Z Output
Chip Disable to High-Z Output
Output Disable to High-Z Output
Output Hold from Address Change
100
50
0
20
10
0
tOLZ
tHZ
tOHZ
tOH
150
150
30
30
0
0
50
10
Recommended Timing Limits - Write Cycle (Not all inclusive values tested)
1.3 - 2.3 V
1.65 - 2.3 V
Item
Symbol
Units
Min.
Max.
Min.
Max.
tWC
tCW
tAW
tWP
tAS
Write Cycle Time
Chip Enable to End of Write
Address Valid to End of Write
Address Setup Time
500
400
400
300
0
85
50
50
40
0
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Write Pulse Width
tWR
tWHZ
tDW
tDH
Write Recovery Time
0
0
Write to High-Z Output
50
15
Data to Write Time Overlap
Data Hold from Write Time
End Write to Low-Z Output
Output Hold from Address Change
300
0
40
0
tOW
tOH
50
0
10
0
(DOC#14-02-036 Rev C ECN#01-0887)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
4
NanoAmp Solutions, Inc.
Timing of Read Cycle (CE1 = OE = V , WE = CE2 = V )
N02M0818L2A
IL
IH
t
RC
Address
t
AA
t
OH
Previous Data Valid
Data Valid
Data Out
Timing Waveform of Read Cycle (WE=V )
IH
t
RC
Address
t
AA
t
HZ
CE1
CE2
t
CO
t
LZ
t
OHZ
t
OE
OE
t
OLZ
High-Z
Data Valid
Data Out
(DOC#14-02-036 Rev C ECN#01-0887)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
5
NanoAmp Solutions, Inc.
N02M0818L2A
Timing Waveform of Write Cycle (WE control)
t
WC
Address
CE1
t
WR
t
AW
t
CW
CE2
WE
t
t
AS
WP
t
t
DH
DW
High-Z
Data Valid
Data In
t
WHZ
t
OW
High-Z
Data Out
Timing Waveform of Write Cycle (CE1 Control)
t
WC
Address
t
t
WR
AW
CE1
t
CW
t
(for CE2 Control, use
inverted signal)
AS
t
t
WP
WE
t
t
DH
DW
Data Valid
Data In
t
LZ
WHZ
High-Z
Data Out
(DOC#14-02-036 Rev C ECN#01-0887)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
6
NanoAmp Solutions, Inc.
N02M0818L2A
32-Lead STSOP-I Package (N32)
11.80±0.10
0.50mm REF
8.0±0.10
0.27
0.17
13.40±0.20
SEE DETAIL B
DETAIL B
1.10±0.15
o
o
0 -8
0.20
0.00
0.80mm REF
Note:
1. All dimensions in millimeters
2. Package dimensions exclude molding flash
(DOC#14-02-036 Rev C ECN#01-0887)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
7
NanoAmp Solutions, Inc.
Ordering Information
N02M0818L2A
N02M0818L2AX-XX X
20°C to 60°C
Temperature
100 = 100ns @ 1.65V
Performance
N = 32-pin STSOP I
D = Known Good Die
Package Type
Revision History
Revision #
Date
Change Description
A
B
C
Dec 2002
January 2004
July 2004
Initial Release
Updated with power characteristics
General Update
© 2001 - 2002 Nanoamp Solutions, Inc. All rights reserved.
NanoAmp Solutions, Inc. ("NanoAmp") reserves the right to change or modify the information contained in this data sheet and the products described therein, without prior notice.
NanoAmp does not convey any license under its patent rights nor the rights of others. Charts, drawings and schedules contained in this data sheet are provided for illustration pur-
poses only and they vary depending upon specific applications.
NanoAmp makes no warranty or guarantee regarding suitability of these products for any particular purpose, nor does NanoAmp assume any liability arising out of the application
or use of any product or circuit described herein. NanoAmp does not authorize use of its products as critical components in any application in which the failure of the NanoAmp
product may be expected to result in significant injury or death, including life support systems and critical medical instruments.
(DOC#14-02-036 Rev C ECN#01-0887)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
8
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