N08T1630CXB [NANOAMP]
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512Kx16 bit; 8MB超低功耗异步SRAM CMOS 512Kx16位
| 型号： | N08T1630CXB |
| 厂家： | 
NANOAMP SOLUTIONS, INC. |
| 描述： | 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512Kx16 bit |
| 文件： | 总9页 (文件大小：254K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NanoAmp Solutions, Inc.
670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035
ph: 408-935-7777, FAX: 408-935-7770
www.nanoamp.com
N08T1630CxB
8Mb Ultra-Low Power Asynchronous CMOS SRAM
512Kx16 bit
Overview
Features
The N08T1630CxB is an integrated memory
device containing a low power 8 Mbit SRAM built
using a self-refresh DRAM array organized as
512,288 words by 16 bits. It is designed to be
identical in operation and interface to standard 6T
SRAMS. The device is designed for low standby
and operating current and includes a power-down
feature to automatically enter standby mode. The
device operates with two chip enable (CE1 and
CE2) controls and output enable (OE) to allow for
easy memory expansion. Byte controls (UB and
LB) allow the upper and lower bytes to be
• Single Wide Power Supply Range
2.7 to 3.6 Volts
• Very low standby current
70µA at 3.0V (Max)
• Very low operating current
2.0mA at 3.0V and 1µs (Typical)
• Simple memory control
Dual Chip Enables (CE1 and CE2)
Byte control for independent byte operation
Output Enable (OE) for memory expansion
accessed independently and can also be used to
deselect the device. The N08T1630CxB is optimal
for various applications where low-power is critical
such as battery backup and hand-held devices.
The device can operate over a very wide
• Very fast access time
55ns address access option
30ns OE access time
• Automatic power down to standby mode
• TTL compatible three-state output driver
• Green package option for TSOP and BGA
o
o
temperature range of -40 C to +85 C and is
available in JEDEC standard BGA and TSOP2
packages compatible with other standard 512Kb x
16 SRAMs.
Product Family
Standby
Operating
Current (Icc),
Max
Operating
Power
Current (ISB),
Part Number
Package Type
Speed
Temperature
Supply (Vcc)
Max @ 3.0V
N08T1630C2BZ
N08T1630C2BZ2
N08T1630C1BT
48 - BGA
Green 48 - BGA
44- TSOP2
55/70ns @
2.7V
-40oC to +85oC
2.7V - 3.6V
70 µA
3 mA @ 1MHz
N08T1630C1BT2 Green 44- TSOP2
Pin Configuration (Top View)
Pin Descriptions
1
2
3
A0
A3
4
A1
A4
5
A2
6
Pin Name
A0-A18
WE
CE1
CE2
OE
LB
UB
I/O0-I/O15
Pin Function
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A4
1
A5
LB
OE
CE2
A
B
C
D
E
F
Address Inputs
Write Enable Input
Chip Enable 1 Input
A3
2
A6
A2
3
A7
I/O8
I/O0
UB
CE1
A1
4
OE
A0
5
UB
CE
6
LB
I/O9 I/O10 A5
VSS I/O11 A17
A6
A7
I/O1 I/O2
I/O3 VCC
I/O0
I/O1
I/O2
I/O3
VCC
VSS
I/O4
I/O5
I/O6
I/O7
WE
A18
A17
A16
A15
A14
7
I/O15
I/O14
I/O13
I/O12
VSS
VCC
I/O11
I/O10
I/O9
I/O8
A8
Chip Enable 2 Input (BGA only)
Output Enable Input
8
44 Pin
9
TSOP2
10
11
12
13
14
15
16
17
18
19
20
21
22
VCC I/O12 VSS A16 I/O4 VSS
I/O14 I/O13 A14 A15 I/O5 I/O6
Lower Byte Enable Input
Upper Byte Enable Input
Data Inputs/Outputs
I/O15
A18
A12
A9
A13
A10
I/O7
NC
NC
A8
WE
A11
G
H
VCC
VSS
NC
Power
Ground
Not Connected
A9
A10
A11
48 Ball BGA
6 x 8 mm
A12
A13
(DOC# 14-02-004 REV H ECN# 01-1102)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
1
NanoAmp Solutions, Inc.
Functional Block Diagram
N08T1630CxB
Address
Address
Input/
512K
Decode
Inputs
Output
x 16 bit
RAM Array
Logic
I/O0 - I/O7
Mux
A0 - A18
and
Buffers
I/O8 - I/O15
CE1
CE2
Control
Logic
WE
OE
UB
LB
Functional Description
2
CE21
CE1
WE
OE
UB
LB
MODE
POWER
I/O0 - I/O15
Standby3
Standby3
Standby3
Write
H
X
L
L
L
L
X
L
X
X
X
L
X
X
X
X4
L
X
X
X
X
High Z
High Z
Standby
Standby
Standby
Active
H
H
H
H
H
H
High Z
L2
L2
L2
L2
L2
L2
Data In
Data Out
High Z
H
H
Active
Read
Active
H
Active
1. CE2 only applies to BGA package.
2. When UB and LB are in select mode (low), I/O0 - I/O15 are affected as shown. When LB only is in the select mode only I/O0 - I/O7
are affected as shown. When UB is in the select mode only I/O8 - I/O15 are affected as shown.
3. When the device is in standby mode, control inputs (WE, OE, UB, and LB), address inputs and data input/outputs are internally
isolated from any external influence and disabled from exerting any influence externally.
4. When WE is invoked, the OE input is internally disabled and has no effect on the circuit.
1
Capacitance
Item
Symbol
CIN
Test Condition
Min
Max
8
Unit
pF
VIN = 0V, f = 1 MHz, TA = 25oC
VIN = 0V, f = 1 MHz, TA = 25oC
Input Capacitance
I/O Capacitance
CI/O
8
pF
1. These parameters are verified in device characterization and are not 100% tested
(DOC# 14-02-004 REV H ECN# 01-1102)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
2
NanoAmp Solutions, Inc.
N08T1630CxB
1
Absolute Maximum Ratings
Item
Symbol
VIN,OUT
VCC
Rating
–0.3 to VCC+0.3
–0.3 to 4.5
500
Unit
V
Voltage on any pin relative to VSS
Voltage on VCC Supply Relative to VSS
Power Dissipation
V
PD
mW
oC
oC
oC
TSTG
Storage Temperature
–40 to 125
TA
Operating Temperature
-40 to +85
260oC, 10sec
TSOLDER
Soldering Temperature and Time
1. Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the operating section of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Operating Characteristics (Over Specified Temperature Range)
Typ1
Item
Symbol
Test Conditions
Min.
Max
Unit
VCC
VIH
VIL
Supply Voltage
Input High Voltage
2.7
2.2
3.0
3.6
CC+0.3
V
V
V
Input Low Voltage
–0.3
0.6
V
VOH
VOL
ILI
IOH = 0.2mA
IOL = -0.2mA
VCC–0.4
Output High Voltage
Output Low Voltage
Input Leakage Current
Output Leakage Current
V
0.4
0.5
0.5
V
VIN = 0 to VCC
µA
µA
ILO
OE = VIH or Chip Disabled
VCC=3.6 V, VIN=VIH or VIL
Chip Enabled, IOUT = 0
Read/Write Operating Supply Current
ICC1
ICC2
3.0
5.0
mA
mA
@ 1 µs Cycle Time2
VCC=3.6 V, VIN=VIH or VIL
Chip Enabled, IOUT = 0
Read/Write Operating Supply Current
@ 70 ns Cycle Time2
12.0
25.0
VIN = VCC or 0V
Chip Disabled
ISB1
Maximum Standby Current
Maximum Standby Current
70.0
80.0
µA
µA
tA= 85oC, VCC = 3.0 V
VIN = VCC or 0V
Chip Disabled
ISB2
tA= 85oC, VCC = 3.6 V
1. Typical values are measured at Vcc=Vcc Typ., TA=25°C and not 100% tested.
2. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add current required to drive
output capacitance expected in the actual system.
(DOC# 14-02-004 REV H ECN# 01-1102)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
3
NanoAmp Solutions, Inc.
N08T1630CxB
Timing
-55
-70
Item
Symbol
Units
Min.
Max.
Min.
Max.
tRC
tAA
Read Cycle Time
Address Access Time
55
70
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
55
55
30
55
70
70
35
70
tCO
Chip Enable to Valid Output
Output Enable to Valid Output
Byte Select to Valid Output
tOE
tLB, tUB
tLZ
Chip Enable to Low-Z output
Output Enable to Low-Z Output
Byte Select to Low-Z Output
Chip Disable to High-Z Output
Output Disable to High-Z Output
Byte Select Disable to High-Z Output
Output Hold from Address Change
5
5
5
5
tOLZ
tBLZ
tHZ
5
5
0
20
20
20
0
25
25
25
tOHZ
tBHZ
tOH
0
0
0
0
10
10
tWC
tCW
tAW
tBW
tWP
tAS
Write Cycle Time
Chip Enable to End of Write
Address Valid to End of Write
Byte Select to End of Write
Write Pulse Width
55
45
45
45
45
0
70
55
55
55
55
0
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Address Setup Time
tWR
tWHZ
tDW
tDH
Write Recovery Time
0
0
Write to High-Z Output
Data to Write Time Overlap
Data Hold from Write Time
End Write to Low-Z Output
25
25
40
0
40
0
tOW
5
5
ns
(DOC# 14-02-004 REV H ECN# 01-1102)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
4
NanoAmp Solutions, Inc.
Timing of Read Cycle (CE1 = OE = V , WE = CE2 = V )
N08T1630CxB
IL
IH
t
RC
Address
t
AA
t
OH
Previous Data Valid
Data Valid
Data Out
Timing Waveform of Read Cycle (WE=V )
IH
t
RC
Address
t
AA
t
HZ
CE1
CE2
t
CO
t
LZ
t
OHZ
t
OE
OE
t
OLZ
t
t
LB, UB
LB, UB
t
t
t
BHZ
LBLZ, UBLZ
High-Z
Data Valid
Data Out
(DOC# 14-02-004 REV H ECN# 01-1102)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
5
NanoAmp Solutions, Inc.
N08T1630CxB
Timing Waveform of Write Cycle (WE control)
t
WC
Address
t
WR
t
AW
CE1
CE2
t
CW
t
BW
LB, UB
WE
t
t
AS
WP
t
t
DH
DW
High-Z
Data Valid
Data In
t
WHZ
t
OW
High-Z
Data Out
Timing Waveform of Write Cycle (CE1 Control)
t
WC
Address
t
t
AW
WR
t
CE1
CW
(for CE2 Control, use
inverted signal)
t
AS
t
BW
LB, UB
WE
t
t
WP
t
t
DH
DW
Data Valid
Data In
t
LZ
WHZ
High-Z
Data Out
(DOC# 14-02-004 REV H ECN# 01-1102)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
6
NanoAmp Solutions, Inc.
N08T1630CxB
44-Lead TSOP II Package (T44)
18.41±0.10
11.76±0.20
10.16±0.10
0.80mm REF
0.396
0.338
SEE DETAIL B
DETAIL B
1.20 Max
o
o
0 -8
0.15
0.05
0.80mm REF
Note:
1. All dimensions in inches (Millimeters)
2. Package dimensions exclude molding flash
(DOC# 14-02-004 REV H ECN# 01-1102)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
7
NanoAmp Solutions, Inc.
Ball Grid Array Package
N08T1630CxB
0.23±0.05
0.90±0.10
D
A1 BALL PAD
CORNER (3)
1. 0.30±0.05 DIA.
E
2. SEATING PLANE - Z
0.15
Z
0.08
Z
TOP VIEW
SIDE VIEW
1. DIMENSION IS MEASURED AT THE
MAXIMUM SOLDER BALL DIAMETER.
PARALLEL TO PRIMARY Z.
A1 BALL PAD
CORNER
SD
2. PRIMARY DATUM Z AND SEATING
PLANE ARE DEFINED BY THE
SPHERICAL CROWNS OF THE
SOLDER BALLS.
e
SE
3. A1 BALL PAD CORNER I.D. TO BE
MARKED BY INK.
K TYP
J TYP
e
BOTTOM VIEW
Dimensions (mm)
e = 0.75
BALL
D
E
MATRIX
TYPE
SD
SE
J
K
6±0.10
8±0.10
0.375
0.375
1.125
1.375
FULL
(DOC# 14-02-004 REV H ECN# 01-1102)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
8
NanoAmp Solutions, Inc.
Ordering Information
N08T1630CxB
N08T1630CXB X(x) -XXI
55 = 55ns
70 = 70ns
Performance
Z = 48-BGA
Package
Z2 = Green 48-BGA (RoHS Compliant)
T = 44-TSOP2
T2 = Green 44-TSOP2 (RoHS Compliant)
1 = 1 CE (TSOP)
2 = 2 CE (BGA)
# CE
Revision History
Revision
Date
Change Description
A
B
C
D
E
August 2002
Sept 2002
November 2002
February 2003
April 2003
Initial Preliminary Release
Added TSOP option to ordering information
Added 55ns sort
Updated BGA package thickness from 1.2mm to 1.0mm
Updated for dual CE in BGA only
Change ISB @ 3.0v to 60 uA
Change tHZ to 20ns for 55ns part
Change tDW to 40ns for both 55ns and 70ns part
F
September 2003
Change ISB @ 3.0v to 70 uA
Added Green package offering
G
H
November 2003
January 2005
© 2005 Nanoamp Solutions, Inc. All rights reserved.
NanoAmp Solutions, Inc. ("NanoAmp") reserves the right to change or modify the information contained in this data sheet and the products described therein, without prior notice.
NanoAmp does not convey any license under its patent rights nor the rights of others. Charts, drawings and schedules contained in this data sheet are provided for illustration pur-
poses only and they vary depending upon specific applications.
NanoAmp makes no warranty or guarantee regarding suitability of these products for any particular purpose, nor does NanoAmp assume any liability arising out of the application
or use of any product or circuit described herein. NanoAmp does not authorize use of its products as critical components in any application in which the failure of the NanoAmp
product may be expected to result in significant injury or death, including life support systems and critical medical instruments.
(DOC# 14-02-004 REV H ECN# 01-1102)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
9
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