NCE70R260F [NCEPOWER]
N-Channel Super Junction Power MOSFET ll;
| 型号： | NCE70R260F |
| 厂家： | 
WUXI NCE POWER SEMICONDUCTOR CO., LTD |
| 描述： | N-Channel Super Junction Power MOSFET ll |
| 文件： | 总10页 (文件大小：758K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NCE70R260D,NCE70R260,NCE70R260F
N-Channel Super Junction Power MOSFET Ⅱ
General Description
The series of devices use advanced super junction
technology and design to provide excellent RDS(ON) with low
gate charge. This super junction MOSFET fits the industry’s
AC-DC SMPS requirements for PFC, AC/DC power
conversion, and industrial power applications.
VDS @Tjmax
RDS(ON) TYP
ID
750
260
15
V
mΩ
A
Features
●New technology for high voltage device
●Low on-resistance and low conduction losses
●Small package
●Ultra Low Gate Charge cause lower driving requirements
●100% Avalanche Tested
●ROHS compliant
Application
● Power factor correction（PFC）
● Switched mode power supplies(SMPS)
● Uninterruptible Power Supply（UPS）
Schematic diagram
Package Marking And Ordering Information
Device
Device Package
Marking
NCE70R260D
NCE70R260
NCE70R260F
TO-263
NCE70R260D
NCE70R260
NCE70R260F
TO-220
TO-220F
TO-263
TO-220
TO-220F
Table 1. Absolute Maximum Ratings (TC=25℃)
NCE70R260D
NCE70R260
Parameter
Symbol
NCE70R260F
Unit
700
V
V
Drain-Source Voltage (VGS=0V）
Gate-Source Voltage (VDS=0V)
VDS
VGS
±30
Continuous Drain Current at Tc=25°C
15
10
15*
10*
A
ID (DC)
ID (DC)
IDM (pluse)
PD
Continuous Drain Current at Tc=100°C
A
(Note 1)
45
45*
A
Pulsed drain current
Maximum Power Dissipation(Tc=25℃)
145
1.16
33.5
0.268
W
Derate above 25°C
W/°C
mJ
A
(Note 2)
370
7.5
EAS
Single pulse avalanche energy
Avalanche current(Note 1)
IAR
Repetitive Avalanche energy ，tAR limited by Tjmax
(Note 1)
0.8
EAR
mJ
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NCE70R260D,NCE70R260,NCE70R260F
NCE70R260D
Parameter
Symbol
NCE70R260F
Unit
NCE70R260
Drain Source voltage slope, VDS ≤480 V,
Reverse diode dv/dt，VDS ≤480 V,ISD<ID
Operating Junction and Storage Temperature Range
* limited by maximum junction temperature
50
15
dv/dt
dv/dt
V/ns
V/ns
°C
-55...+150
TJ,TSTG
Table 2. Thermal Characteristic
Parameter
NCE70R260D
Symbol
NCE70R260F
Unit
NCE70R260
Thermal Resistance，Junction-to-Case（Maximum）
Thermal Resistance，Junction-to-Ambient （Maximum）
RthJC
RthJA
0.86
62
3.73
80
°C /W
°C /W
Table 3. Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max
Unit
On/off states
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current(Tc=25℃)
Zero Gate Voltage Drain Current(Tc=125℃)
Gate-Body Leakage Current
Gate Threshold Voltage
BVDSS
IDSS
VGS=0V ID=250μA
VDS=700V,VGS=0V
VDS=700V,VGS=0V
VGS=±30V,VDS=0V
VDS=VGS,ID=250μA
VGS=10V, ID=8A
700
V
μA
μA
nA
V
1
IDSS
100
±100
IGSS
VGS(th)
RDS(ON)
2.5
3
3.5
Drain-Source On-State Resistance
Dynamic Characteristics
Forward Transconductance
Input Capacitance
260
290
mΩ
gFS
Clss
Coss
Crss
Qg
VDS = 20V, ID = 8A
11
1360
115
4.8
29
S
pF
pF
pF
nC
nC
nC
Ω
VDS=50V,VGS=0V,
Output Capacitance
F=1.0MHz
Reverse Transfer Capacitance
Total Gate Charge
45
VDS=480V,ID=15A,
Gate-Source Charge
Qgs
Qgd
RG
6.5
12
V
GS=10V
Gate-Drain Charge
Intrinsic gate resistance
f = 1 MHz open drain
10
Switching times
Turn-on Delay Time
td(on)
tr
td(off)
tf
10
5
nS
nS
nS
nS
Turn-on Rise Time
VDD=380V,ID=8A,
RG=5.5Ω,VGS=10V
Turn-Off Delay Time
55
4.5
75
10
Turn-Off Fall Time
Source- Drain Diode Characteristics
Source-drain current(Body Diode)
Pulsed Source-drain current(Body Diode)
Forward On Voltage
ISD
ISDM
VSD
trr
15
45
A
A
TC=25°C
Tj=25°C,ISD=8A,VGS=0V
0.9
270
3.3
24
1.2
V
Reverse Recovery Time
nS
uC
A
Tj=25°C,IF=8A,di/dt=100A/μs
Reverse Recovery Charge
Peak Reverse Recovery Current
Qrr
Irrm
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2. Tj=25℃,VDD=50V,VG=10V, RG=25Ω
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NCE70R260D,NCE70R260,NCE70R260F
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (curves)
Figure1. Safe operating area
Figure2. Safe operating area for TO-220F
Figure3. Source-Drain Diode Forward Voltage
Figure4. Output characteristics
Figure5. Transfer characteristics
Figure6. Static drain-source on resistance
Wuxi NCE Power Semiconductor Co., Ltd
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NCE70R260D,NCE70R260,NCE70R260F
Figure7. RDS(ON) vs Junction Temperature
Figure8. BVDSS vs Junction Temperature
Figure9. Maximum ID vs Junction Temperature
Figure10. Gate charge waveforms
Figure11. Capacitance
Figure12. Transient Thermal Impedance
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NCE70R260D,NCE70R260,NCE70R260F
Figure13. Transient Thermal Impedance for TO-220F
Wuxi NCE Power Semiconductor Co., Ltd
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NCE70R260D,NCE70R260,NCE70R260F
Testꢀcircuitꢀ
1）Gate charge test circuit & Waveform
2）Switch Time Test Circuit：
3）Unclamped Inductive Switching Test Circuit & Waveforms
Wuxi NCE Power Semiconductor Co., Ltd
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NCE70R260D,NCE70R260,NCE70R260F
TO-263-2L Package Information
Dimensions In Millimeters
Min.
Dimensions In Inches
Min.
Symbol
Max.
4.670
0.150
1.370
0.910
1.370
0.530
1.370
10.310
8.900
Max.
0.184
0.006
0.054
0.036
0.054
0.021
0.054
0.406
0.350
A
A1
B
4.470
0.000
1.170
0.710
1.170
0.310
1.170
10.010
8.500
0.176
0.000
0.046
0.028
0.046
0.012
0.046
0.394
0.335
b
b1
c
c1
D
E
e
2.540 TYP.
0.100 TYP.
e1
L
4.980
15.050
5.080
2.340
1.300
5.180
15.450
5.480
2.740
1.700
0.196
0.593
0.200
0.092
0.051
0.204
0.608
0.216
0.108
0.067
L1
L2
L3
V
5.600 REF
0.220 REF
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NCE70R260D,NCE70R260,NCE70R260F
TO-220-3L-C Package Information
Dimensions In Millimeters
Min.
Dimensions In Inches
Min.
Symbol
Max.
4.600
2.550
0.910
1.370
0.650
1.400
10.250
9.750
12.950
Max.
0.181
0.100
0.036
0.054
0.026
0.055
0.404
0.384
0.510
A
A1
b
4.400
2.250
0.710
1.170
0.330
1.200
9.910
8.9500
12.650
0.173
0.089
0.028
0.046
0.013
0.047
0.390
0.352
0.498
b1
c
c1
D
E
E1
e
2.540 TYP.
0.100 TYP.
e1
F
4.980
2.650
7.900
0.000
12.900
2.850
5.180
2.950
8.100
0.300
13.400
3.250
0.196
0.104
0.311
0.000
0.508
0.112
0.204
0.116
0.319
0.012
0.528
0.128
H
h
L
L1
V
7.500 REF.
0.295 REF.
Φ
3.400
3.800
0.134
0.150
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NCE70R260D,NCE70R260,NCE70R260F
TO-220F Package Information
Wuxi NCE Power Semiconductor Co., Ltd
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NCE70R260D,NCE70R260,NCE70R260F
ATTENTION:
■ Any and all NCE products described or contained herein do not have specifications that can handle applications that require
extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure
can be reasonably expected to result in serious physical and/or material damage. Consult with your
NCE representative nearest you before using any NCE products described or contained herein in such applications.
■
NCE assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed
in products specifications of any and all NCE products described or contained herein.
■ Specifications of any and all NCE products described or contained herein stipulate the performance, characteristics, and
functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and
functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that
cannot be evaluated in an independent device, the customer should always evaluate and test
devices mounted in the customer’s products or equipment.
■
NCE Power Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could
cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or
events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe
design, redundant design, and structural design.
■ In the event that any or all NCE products(including technical data, services) described or contained herein are controlled
under any of applicable local export control laws and regulations, such products must not be exported without obtaining the
export license from the authorities concerned in accordance with the above law.
■ No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including
photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission
of NCE Power Semiconductor CO.,LTD.
■ Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume
production. NCE believes information herein is accurate and reliable, but no guarantees are made or implied regarding its
use or any infringements of intellectual property rights or other rights of third parties.
■
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the NCE product
that you intend to use.
■
This catalog provides information as of Mar. 2010. Specifications and information herein are subject to change without notice.
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