NCE70R900F [NCEPOWER]

N-Channel Super Junction Power MOSFET;


型号：	NCE70R900F
厂家：	WUXI NCE POWER SEMICONDUCTOR CO., LTD
描述：	N-Channel Super Junction Power MOSFET
文件：	总10页 (文件大小：670K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

NCE70R900D，NCE70R900, NCE70R900F

N-Channel Super Junction Power MOSFET Ⅱ

General Description

The series of devices use advanced super junction

technology and design to provide excellent R^DS(ON)with low

gate charge. This super junction MOSFET fits the industry’s

AC-DC SMPS requirements for PFC, AC/DC power

conversion, and industrial power applications.

V_DS

700

840

mΩ

R_{DS(ON) TYP}

I_D

Features

●New technology for high voltage device

●Low on-resistance and low conduction losses

●small package

●Ultra Low Gate Charge cause lower driving requirements

●100% Avalanche Tested

●ROHS compliant

Application

● Power factor correction（PFC）

● Switched mode power supplies(SMPS)

● Uninterruptible Power Supply（UPS）

Schematic diagram

Package Marking And Ordering Information

Device

Device Package

Marking

NCE70R900D

NCE70R900

NCE70R900F

TO-263

NCE70R900D

NCE70R900

NCE70R900F

TO-220

TO-220F

TO-263

TO-220

TO-220F

Table 1. Absolute Maximum Ratings (T_C=25℃)

NCE70R900

NCE70R900D

Parameter

Symbol

NCE70R900F

Unit

700

Drain-Source Voltage (VGS=0V）

Gate-Source Voltage (VDS=0V)

V^DS

VGS

±30

Continuous Drain Current at Tc=25°C

I_{D (DC)}

I_{DM (pluse)}

Continuous Drain Current at Tc=100°C

(Note 1)

15*

Pulsed drain current

Drain Source voltage slope, VDS = 480 V, ID =5 A, Tj =

125 °C

dv/dt

P_D

V/ns

Maximum Power Dissipation(Tc=25℃)

Derate above 25°C

Single pulse avalanche energy ^(Note2)

Avalanche current^{(Note 1)}

W/°C

0.39

0.23

135

2.5

EAS

I_AR

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NCE70R900D，NCE70R900, NCE70R900F

Parameter

Symbol

E_AR

Value

0.4

Unit

°C

Repetitive Avalanche energy ，t_ARlimited by T_jmax

(Note 1)

Operating Junction and Storage Temperature Range

-55...+150

T_J,T_STG

* limited by maximum junction temperature

Table 2. Thermal Characteristic

Parameter

NCE70R900

Symbol

NCE70R900F

Unit

NCE70R900D

Thermal Resistance，Junction-to-Case（Maximum）

Thermal Resistance，Junction-to-Ambient （Maximum）

R_thJC

R_thJA

2.55

4.3

°C /W

Table 3. Electrical Characteristics (TA=25℃unless otherwise noted)

Parameter

Symbol

Condition

Min Typ Max

Unit

On/off states

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current(Tc=25℃)

Zero Gate Voltage Drain Current(Tc=125℃)

Gate-Body Leakage Current

Gate Threshold Voltage

BV_DSS

I_DSS

V_GS=0V I_D=250μA

V_DS=700V,V_GS=0V

V_GS=±30V,V_DS=0V

V_DS=V_GS,I_D=250μA

V_GS=10V, I_D=3A

700

μA

I_DSS

I_GSS

±100

V_GS(th)

R_DS(ON)

2.5

3.5

Drain-Source On-State Resistance

Dynamic Characteristics

Forward Transconductance

Input Capacitance

840

950

mΩ

g_FS

C_lss

C_oss

C_rss

Q_g

V_DS= 20V, I_D= 3A

4.8

460

Ω

V_DS=50V,V_GS=0V,

Output Capacitance

F=1.0MHz

Reverse Transfer Capacitance

Total Gate Charge

3.5

V_DS=480V,I_D=5A,

Gate-Source Charge

Q_gs

Q_gd

R_G

1.6

V_GS=10V

Gate-Drain Charge

Intrinsic gate resistance

f = 1 MHz open drain

2.5

Switching times

Turn-on Delay Time

t_d(on)

t_r

t_d(off)

t_f

Turn-on Rise Time

V_DD=380V,I_D=5A,

R_G=18Ω,V_GS=10V

Turn-Off Delay Time

Turn-Off Fall Time

Source- Drain Diode Characteristics

Source-drain current(Body Diode)

Pulsed Source-drain current(Body Diode)

Forward On Voltage

I_SD

I_SDM

V_SD

t_rr

T_C=25°C

1.3

Tj=25°C,I_SD=5A,V_GS=0V

Reverse Recovery Time

250

2.2

Tj=25°C,I_F=5A,di/dt=100A/μs

Reverse Recovery Charge

Peak reverse recovery current

Q_rr

I_rrm

Notes: 1.Repetitive Rating: Pulse width limited by maximum junction temperature

2. Tj=25℃,VDD=50V,VG=10V, R_G=25Ω

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NCE70R900D，NCE70R900, NCE70R900F

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (curves)

Figure1. Safe operating area for TO-220，TO-263

Figure2. Safe operating area for TO-220F

Figure3. Source-Drain Diode Forward Voltage

Figure4. Output characteristics

Figure5. Transfer characteristics

Figure6. Static drain-source on resistance

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NCE70R900D，NCE70R900, NCE70R900F

Figure7. R_DS(ON)vs Junction Temperature

Figure8. BV_DSSvs Junction Temperature

Figure9. Maximum I_Dvs Junction Temperature

Figure10. Gate charge waveforms

Figure11. Capacitance

Figure12. Transient Thermal Impedance

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NCE70R900D，NCE70R900, NCE70R900F

Figure13. Transient Thermal Impedance for TO-220F

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NCE70R900D，NCE70R900, NCE70R900F

Test circuit

1）Gate charge test circuit & Waveform

2）Switch Time Test Circuit：

3）Unclamped Inductive Switching Test Circuit & Waveforms

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NCE70R900D，NCE70R900, NCE70R900F

TO-263-2L Package Information

Dimensions In Millimeters

Dimensions In Inches

Min.

Symbol

Min.

4.470

0.000

1.170

0.710

1.170

0.310

1.170

10.010

8.500

Max.

4.670

0.150

1.370

0.910

1.370

0.530

1.370

10.310

8.900

Max.

0.184

0.006

0.054

0.036

0.054

0.021

0.054

0.406

0.350

0.176

0.000

0.046

0.028

0.046

0.012

0.046

0.394

0.335

2.540 TYP.

0.100 TYP.

4.980

15.050

5.080

2.340

1.300

5.180

15.450

5.480

2.740

1.700

0.196

0.593

0.200

0.092

0.051

0.204

0.608

0.216

0.108

0.067

5.600 REF

0.220 REF

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NCE70R900D，NCE70R900, NCE70R900F

TO-220-3L-C Package Information

Dimensions In Millimeters

Dimensions In Inches

Min.

Symbol

Min.

4.400

2.250

0.710

1.170

0.330

1.200

9.910

8.9500

12.650

Max.

4.600

2.550

0.910

1.370

0.650

1.400

10.250

9.750

12.950

Max.

0.181

0.100

0.036

0.054

0.026

0.055

0.404

0.384

0.510

0.173

0.089

0.028

0.046

0.013

0.047

0.390

0.352

0.498

2.540 TYP.

0.100 TYP.

4.980

2.650

7.900

0.000

12.900

2.850

5.180

2.950

8.100

0.300

13.400

3.250

0.196

0.104

0.311

0.000

0.508

0.112

0.204

0.116

0.319

0.012

0.528

0.128

7.500 REF.

0.295 REF.

3.400

3.800

0.134

0.150

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NCE70R900D，NCE70R900, NCE70R900F

TO-220F Package Information

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NCE70R900D，NCE70R900, NCE70R900F

ATTENTION:

■ Any and all NCE products described or contained herein do not have specifications that can handle applications that require

extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure

can be reasonably expected to result in serious physical and/or material damage. Consult with your

NCE representative nearest you before using any NCE products described or contained herein in such applications.

■

NCE assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed

in products specifications of any and all NCE products described or contained herein.

■ Specifications of any and all NCE products described or contained herein stipulate the performance, characteristics, and

functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and

functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that

cannot be evaluated in an independent device, the customer should always evaluate and test

devices mounted in the customer’s products or equipment.

■

NCE Power Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all

semiconductor products fail with some probability. It is possible that these probabilistic failures could

give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could

cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or

events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe

design, redundant design, and structural design.

■ In the event that any or all NCE products(including technical data, services) described or contained herein are controlled

under any of applicable local export control laws and regulations, such products must not be exported without obtaining the

export license from the authorities concerned in accordance with the above law.

■ No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including

photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission

of NCE Power Semiconductor CO.,LTD.

■ Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume

production. NCE believes information herein is accurate and reliable, but no guarantees are made or implied regarding its

use or any infringements of intellectual property rights or other rights of third parties.

■

Any and all information described or contained herein are subject to change without notice due to

product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the NCE product

that you intend to use.

■

This catalog provides information as of Mar. 2010. Specifications and information herein are subject to change without notice.

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