2SC4956-T1 [NEC]

HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD; 高频低噪声放大器NPN硅外延晶体管4引脚MINI模具
2SC4956-T1
型号: 2SC4956-T1
厂家: NEC    NEC
描述:

HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD
高频低噪声放大器NPN硅外延晶体管4引脚MINI模具

晶体 放大器 晶体管 光电二极管
文件: 总6页 (文件大小:50K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DATA SHEET  
SILICON TRANSISTOR  
2SC4956  
HIGH FREQUENCY LOW NOISE AMPLIFIER  
NPN SILICON EPITAXIAL TRANSISTOR  
4 PINS MINI MOLD  
FEATURES  
PACKAGE DIMENSIONS  
Low Noise, High Gain  
Low Voltage Operation  
Low Feedback Capacitance  
Cre = 0.20 pF TYP.  
in millimeters  
+0.2  
2.8  
–0.3  
+0.2  
1.5  
–0.1  
ORDERING INFORMATION  
PART  
QUANTITY  
NUMBER  
PACKING STYLE  
Embossed tape 8 mm wide.  
2SC4956-T1  
3 Kpcs/Reel.  
Pin3 (Base), Pin4 (Emitter) face to perforation  
side of the tape.  
5˚  
5˚  
5˚  
5˚  
2SC4956-T2  
3 Kpcs/Reel.  
Embossed tape 8 mm wide.  
Pin1 (Collector), Pin2 (Emitter) face to perfora-  
tion side of the tape.  
*
Please contact with responsible NEC person, if you require evaluation  
sample. Unit sample quantity shall be 50 pcs. (Part No.: 2SC4956)  
PIN CONNECTIONS  
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)  
1. Collector  
2. Emitter  
3. Base  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
VCBO  
VCEO  
VEBO  
IC  
9
V
V
6
4. Emitter  
2
V
10  
60  
mA  
mW  
˚C  
˚C  
Total Power Dissipation  
Junction Temperature  
Storage Temperature  
PT  
Tj  
150  
Tstg  
–65 to +150  
Caution; Electrostatic Sensitive Device.  
Document No. P10378EJ2V0DS00 (2nd edition)  
(Previous No. TD-2407)  
Date Published July 1995 P  
Printed in Japan  
1993  
©
2SC4956  
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)  
CHARACTERISTIC  
Collector Cutoff Current  
SYMBOL  
ICBO  
IEBO  
MIN.  
TYP.  
MAX.  
0.1  
UNIT  
µA  
TEST CONDITION  
VCB = 5 V, IE = 0  
Emitter Cutoff Current  
DC Current Gain  
0.1  
µA  
VEB = 1 V, IC = 0  
1
hFE  
75  
150  
VCE = 3 V, IC = 5 mA*  
Gain Bandwidth Product  
Feed back Capacitance  
Insertion Power Gain  
Noise Figure  
fT  
12  
0.2  
11  
GHz  
pF  
VCE = 3 V, IC = 5 mA, f = 2.0 GHz  
2
Cre  
0.4  
4.0  
VCB = 3 V, IE = 0, f = 1 MHz*  
2
|S21e|  
9
dB  
VCE = 3 V, IC = 5 mA, f = 2.0 GHz  
VCE = 3 V, IC = 3 mA, f = 2.0 GHz  
NF  
2.5  
dB  
*1 Pulse Measurement; PW 350 µs, Duty Cycle 2 % Pulsed.  
*2 Measured with 3 terminals bridge, Emitter and Case should be grounded.  
hFE Classification  
Rank  
Marking  
hFE  
T82  
T82  
75 to 150  
TYPICAL CHARACTERISTICS (TA = 25 ˚C)  
TOTAL POWER DISSIPATION  
vs. AMBIENT TEMPERATURE  
COLLECTOR CURRENT  
vs. BASE TO EMITTER VOLTAGE  
50  
40  
30  
20  
10  
VCE = 3 V  
Free Air  
200  
100  
60 mW  
0
50  
100  
150  
0
0.5  
1
T
A
– Ambient Temperature – ˚C  
VBE – Base to Emitter Voltage – V  
2
2SC4956  
COLLECTOR CURRENT  
vs. COLLECTOR TO EMITTER VOLTAGE  
DC CURRENT GAIN  
vs. COLLECTOR CURRENT  
200  
40  
30  
20  
10  
500  
400  
300  
µ
µ
µ
A
A
A
100  
5 V  
VCE = 3 V  
200  
µ
A
IB = 100 A  
µ
0
0.1  
0
2
4
6
0.5  
1
5
10  
50 100  
VCE – Collector to Emitter Voltage – V  
I
C
– Collector Current – mA  
GAIN BANDWIDTH PRODUCT  
vs. COLLECTOR CURRENT  
INSERTION POWER GAIN  
vs. COLLECTOR CURRENT  
14  
12  
10  
8
12  
10  
8
f = 2 GHz  
f = 2 GHz  
5 V  
3 V  
5 V  
VCE = 1 V  
6
3 V  
6
4
V
CE = 1 V  
4
2
0.5  
1
2
5
10  
20  
0.5  
1
2
5
10  
20  
50  
IC  
– Collector Current – mA  
IC – Collector Current – mA  
NOISE FIGURE  
vs. COLLECTOR CURRENT  
FEED-BACK CAPACITANCE  
vs. COLLECTOR TO BASE VOLTAGE  
5
4
3
2
0.5  
0.4  
0.3  
0.2  
f = 1 MHz  
f = 2 GHz  
V
CE = 3 V  
1
0
0.1  
0
0.5  
1
2
5
10  
20  
0.5  
1
2
5
10  
20  
IC  
– Collector Current – mA  
VCB – Collector to Base Voltage – V  
3
2SC4956  
S-PARAMETER  
(VCE = 3 V, IC = 1 mA, ZO = 50 )  
f
S11  
S21  
S12  
S22  
(GHz)  
MAG  
ANG  
MAG  
ANG  
MAG  
ANG  
MAG  
ANG  
0.200  
0.400  
0.600  
0.800  
1.000  
1.200  
1.400  
1.600  
1.800  
2.000  
2.200  
2.400  
2.600  
2.800  
3.000  
0.9570  
0.9200  
0.8920  
0.8330  
0.7910  
0.7370  
0.6590  
0.5980  
0.5420  
0.4630  
0.4080  
0.3560  
0.3220  
0.2550  
0.2190  
–8.1  
–15.5  
–24.1  
–31.0  
–38.7  
–46.5  
–54.0  
–60.7  
–66.6  
–73.6  
–82.7  
–89.3  
–96.9  
–110.8  
–118.1  
3.2990  
3.1190  
3.1280  
3.0280  
2.9450  
2.9190  
2.7560  
2.6260  
2.4840  
2.3700  
2.3120  
2.2100  
2.0970  
1.9980  
1.9210  
169.6  
158.2  
149.0  
138.7  
129.2  
119.4  
111.2  
102.3  
93.7  
86.2  
78.8  
71.9  
66.3  
0.0210  
0.0400  
0.0700  
0.0850  
0.1030  
0.1260  
0.1430  
0.1530  
0.1640  
0.1740  
0.1920  
0.1980  
0.1920  
0.2060  
0.2320  
88.3  
81.3  
69.7  
68.1  
62.3  
55.3  
51.6  
48.7  
42.9  
41.6  
36.1  
32.6  
32.8  
29.1  
22.8  
0.9910  
0.9840  
0.9600  
0.9260  
0.8800  
0.8520  
0.8190  
0.7840  
0.7320  
0.6960  
0.6710  
0.6330  
0.6060  
0.5720  
0.5320  
–5.8  
–10.8  
–17.0  
–21.7  
–26.8  
–32.6  
–37.1  
–41.2  
–46.8  
–50.4  
–56.3  
–58.7  
–65.9  
–72.0  
–77.4  
58.7  
53.9  
(VCE = 3 V, I  
C
= 3 mA, Z  
O
= 50 )  
f
S11  
S21  
S12  
S22  
(GHz)  
MAG  
ANG  
MAG  
ANG  
MAG  
ANG  
MAG  
ANG  
0.200  
0.400  
0.600  
0.800  
1.000  
1.200  
1.400  
1.600  
1.800  
2.000  
2.200  
2.400  
2.600  
2.800  
3.000  
0.8730  
0.7880  
0.7090  
0.6030  
0.5280  
0.4530  
0.3720  
0.3160  
0.2650  
0.2080  
0.1460  
0.1250  
0.1070  
0.0670  
0.0410  
–13.5  
–24.1  
–34.8  
–42.7  
–50.4  
–56.7  
–62.0  
–67.3  
–70.2  
–75.0  
–84.0  
–94.7  
–103.5  
–128.8  
–175.4  
7.7390  
6.8700  
6.3160  
5.6650  
5.1110  
4.7060  
4.1970  
3.8590  
3.4780  
3.2210  
3.0510  
2.8660  
2.6500  
2.5070  
2.3660  
162.0  
145.7  
133.1  
121.1  
110.7  
101.4  
93.8  
86.0  
78.9  
72.7  
66.9  
0.0230  
0.0440  
0.0570  
0.0710  
0.0820  
0.1000  
0.1120  
0.1320  
0.1360  
0.1400  
0.1560  
0.1680  
0.1790  
0.1790  
0.1860  
84.8  
78.6  
68.6  
58.9  
59.1  
59.3  
54.4  
50.9  
51.4  
49.0  
46.2  
39.9  
42.4  
35.7  
34.4  
0.9630  
0.9250  
0.8750  
0.8040  
0.7360  
0.6910  
0.6570  
0.6130  
0.5820  
0.5530  
0.5210  
0.4920  
0.4750  
0.4460  
0.4210  
–9.0  
–15.8  
–22.8  
–27.5  
–31.5  
–36.0  
–39.6  
–42.7  
–46.3  
–49.7  
–55.2  
–53.7  
–62.6  
–66.1  
–72.9  
61.0  
56.5  
50.5  
45.5  
4
2SC4956  
S-PARAMETER  
(VCE = 3 V, IC = 5 mA, ZO = 50 )  
f
S11  
S21  
S12  
S22  
(GHz)  
MAG  
ANG  
MAG  
ANG  
MAG  
ANG  
MAG  
ANG  
0.200  
0.400  
0.600  
0.800  
1.000  
1.200  
1.400  
1.600  
1.800  
2.000  
2.200  
2.400  
2.600  
2.800  
3.000  
0.8040  
0.6940  
0.5950  
0.4830  
0.4210  
0.3410  
0.2810  
0.2770  
0.1840  
0.1300  
0.0880  
0.0540  
0.0190  
0.0200  
0.0450  
–16.5  
–28.1  
–39.3  
–46.5  
–53.1  
–58.3  
–63.4  
–68.8  
–64.8  
–61.9  
–78.7  
–98.6  
–67.4  
132.7  
106.6  
10.2510  
8.6340  
7.5490  
6.5000  
5.6980  
5.1160  
4.5060  
4.0840  
3.6580  
3.3690  
3.1690  
2.9460  
2.7220  
2.5900  
2.4410  
157.1  
138.6  
125.1  
113.2  
103.3  
94.6  
87.8  
80.7  
74.0  
68.8  
63.1  
57.9  
53.5  
47.8  
42.7  
0.0200  
0.0420  
0.0580  
0.0670  
0.0830  
0.0930  
0.1030  
0.1150  
0.1260  
0.1400  
0.1490  
0.1690  
0.1760  
0.1770  
0.2010  
76.7  
74.7  
67.5  
65.6  
63.1  
56.9  
59.5  
57.4  
53.5  
48.5  
49.1  
47.0  
45.3  
42.8  
40.2  
0.9490  
0.8910  
0.8100  
0.7490  
0.6800  
0.6330  
0.6050  
0.5710  
0.5390  
0.5090  
0.4840  
0.4710  
0.4450  
0.4290  
0.4000  
–10.8  
–18.4  
–24.7  
–28.0  
–32.4  
–35.5  
–37.9  
–41.0  
–43.3  
–47.4  
–53.6  
–53.8  
–60.7  
–63.6  
–72.4  
5
2SC4956  
No part of this document may be copied or reproduced in any form or by any means without the prior written  
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this  
document.  
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual  
property rights of third parties by or arising from use of a device described herein or any other liability arising  
from use of such device. No license, either express, implied or otherwise, is granted under any patents,  
copyrights or other intellectual property rights of NEC Corporation or others.  
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,  
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or  
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety  
measures in its design, such as redundancy, fire-containment, and anti-failure features.  
NEC devices are classified into the following three quality grades:  
“Standard“, “Special, and “Specific“. The Specific quality grade applies only to devices developed based on  
a customer designated “quality assurance program“ for a specific application. The recommended applications  
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each  
device before using it in a particular application.  
Standard: Computers, office equipment, communications equipment, test and measurement equipment,  
audio and visual equipment, home electronic appliances, machine tools, personal electronic  
equipment and industrial robots  
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support)  
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems or medical equipment for life support, etc.  
The quality grade of NEC devices in Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.  
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,  
they should contact NEC Sales Representative in advance.  
Anti-radioactive design is not implemented in this product.  
M4 94.11  

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