2SC4956-T1 [NEC]
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD; 高频低噪声放大器NPN硅外延晶体管4引脚MINI模具型号: | 2SC4956-T1 |
厂家: | NEC |
描述: | HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD |
文件: | 总6页 (文件大小:50K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
SILICON TRANSISTOR
2SC4956
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
4 PINS MINI MOLD
FEATURES
PACKAGE DIMENSIONS
•
•
•
Low Noise, High Gain
Low Voltage Operation
Low Feedback Capacitance
Cre = 0.20 pF TYP.
in millimeters
+0.2
2.8
–0.3
+0.2
1.5
–0.1
ORDERING INFORMATION
PART
QUANTITY
NUMBER
PACKING STYLE
Embossed tape 8 mm wide.
2SC4956-T1
3 Kpcs/Reel.
Pin3 (Base), Pin4 (Emitter) face to perforation
side of the tape.
5˚
5˚
5˚
5˚
2SC4956-T2
3 Kpcs/Reel.
Embossed tape 8 mm wide.
Pin1 (Collector), Pin2 (Emitter) face to perfora-
tion side of the tape.
*
Please contact with responsible NEC person, if you require evaluation
sample. Unit sample quantity shall be 50 pcs. (Part No.: 2SC4956)
PIN CONNECTIONS
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
1. Collector
2. Emitter
3. Base
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
VCBO
VCEO
VEBO
IC
9
V
V
6
4. Emitter
2
V
10
60
mA
mW
˚C
˚C
Total Power Dissipation
Junction Temperature
Storage Temperature
PT
Tj
150
Tstg
–65 to +150
Caution; Electrostatic Sensitive Device.
Document No. P10378EJ2V0DS00 (2nd edition)
(Previous No. TD-2407)
Date Published July 1995 P
Printed in Japan
1993
©
2SC4956
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC
Collector Cutoff Current
SYMBOL
ICBO
IEBO
MIN.
TYP.
MAX.
0.1
UNIT
µA
TEST CONDITION
VCB = 5 V, IE = 0
Emitter Cutoff Current
DC Current Gain
0.1
µA
VEB = 1 V, IC = 0
1
hFE
75
150
VCE = 3 V, IC = 5 mA*
Gain Bandwidth Product
Feed back Capacitance
Insertion Power Gain
Noise Figure
fT
12
0.2
11
GHz
pF
VCE = 3 V, IC = 5 mA, f = 2.0 GHz
2
Cre
0.4
4.0
VCB = 3 V, IE = 0, f = 1 MHz*
2
|S21e|
9
dB
VCE = 3 V, IC = 5 mA, f = 2.0 GHz
VCE = 3 V, IC = 3 mA, f = 2.0 GHz
NF
2.5
dB
*1 Pulse Measurement; PW ≤ 350 µs, Duty Cycle ≤ 2 % Pulsed.
*2 Measured with 3 terminals bridge, Emitter and Case should be grounded.
hFE Classification
Rank
Marking
hFE
T82
T82
75 to 150
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
COLLECTOR CURRENT
vs. BASE TO EMITTER VOLTAGE
50
40
30
20
10
VCE = 3 V
Free Air
200
100
60 mW
0
50
100
150
0
0.5
1
T
A
– Ambient Temperature – ˚C
VBE – Base to Emitter Voltage – V
2
2SC4956
COLLECTOR CURRENT
vs. COLLECTOR TO EMITTER VOLTAGE
DC CURRENT GAIN
vs. COLLECTOR CURRENT
200
40
30
20
10
500
400
300
µ
µ
µ
A
A
A
100
5 V
VCE = 3 V
200
µ
A
IB = 100 A
µ
0
0.1
0
2
4
6
0.5
1
5
10
50 100
VCE – Collector to Emitter Voltage – V
I
C
– Collector Current – mA
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
14
12
10
8
12
10
8
f = 2 GHz
f = 2 GHz
5 V
3 V
5 V
VCE = 1 V
6
3 V
6
4
V
CE = 1 V
4
2
0.5
1
2
5
10
20
0.5
1
2
5
10
20
50
IC
– Collector Current – mA
IC – Collector Current – mA
NOISE FIGURE
vs. COLLECTOR CURRENT
FEED-BACK CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
5
4
3
2
0.5
0.4
0.3
0.2
f = 1 MHz
f = 2 GHz
V
CE = 3 V
1
0
0.1
0
0.5
1
2
5
10
20
0.5
1
2
5
10
20
IC
– Collector Current – mA
VCB – Collector to Base Voltage – V
3
2SC4956
S-PARAMETER
(VCE = 3 V, IC = 1 mA, ZO = 50 Ω)
f
S11
S21
S12
S22
(GHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
0.200
0.400
0.600
0.800
1.000
1.200
1.400
1.600
1.800
2.000
2.200
2.400
2.600
2.800
3.000
0.9570
0.9200
0.8920
0.8330
0.7910
0.7370
0.6590
0.5980
0.5420
0.4630
0.4080
0.3560
0.3220
0.2550
0.2190
–8.1
–15.5
–24.1
–31.0
–38.7
–46.5
–54.0
–60.7
–66.6
–73.6
–82.7
–89.3
–96.9
–110.8
–118.1
3.2990
3.1190
3.1280
3.0280
2.9450
2.9190
2.7560
2.6260
2.4840
2.3700
2.3120
2.2100
2.0970
1.9980
1.9210
169.6
158.2
149.0
138.7
129.2
119.4
111.2
102.3
93.7
86.2
78.8
71.9
66.3
0.0210
0.0400
0.0700
0.0850
0.1030
0.1260
0.1430
0.1530
0.1640
0.1740
0.1920
0.1980
0.1920
0.2060
0.2320
88.3
81.3
69.7
68.1
62.3
55.3
51.6
48.7
42.9
41.6
36.1
32.6
32.8
29.1
22.8
0.9910
0.9840
0.9600
0.9260
0.8800
0.8520
0.8190
0.7840
0.7320
0.6960
0.6710
0.6330
0.6060
0.5720
0.5320
–5.8
–10.8
–17.0
–21.7
–26.8
–32.6
–37.1
–41.2
–46.8
–50.4
–56.3
–58.7
–65.9
–72.0
–77.4
58.7
53.9
(VCE = 3 V, I
C
= 3 mA, Z
O
= 50 Ω)
f
S11
S21
S12
S22
(GHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
0.200
0.400
0.600
0.800
1.000
1.200
1.400
1.600
1.800
2.000
2.200
2.400
2.600
2.800
3.000
0.8730
0.7880
0.7090
0.6030
0.5280
0.4530
0.3720
0.3160
0.2650
0.2080
0.1460
0.1250
0.1070
0.0670
0.0410
–13.5
–24.1
–34.8
–42.7
–50.4
–56.7
–62.0
–67.3
–70.2
–75.0
–84.0
–94.7
–103.5
–128.8
–175.4
7.7390
6.8700
6.3160
5.6650
5.1110
4.7060
4.1970
3.8590
3.4780
3.2210
3.0510
2.8660
2.6500
2.5070
2.3660
162.0
145.7
133.1
121.1
110.7
101.4
93.8
86.0
78.9
72.7
66.9
0.0230
0.0440
0.0570
0.0710
0.0820
0.1000
0.1120
0.1320
0.1360
0.1400
0.1560
0.1680
0.1790
0.1790
0.1860
84.8
78.6
68.6
58.9
59.1
59.3
54.4
50.9
51.4
49.0
46.2
39.9
42.4
35.7
34.4
0.9630
0.9250
0.8750
0.8040
0.7360
0.6910
0.6570
0.6130
0.5820
0.5530
0.5210
0.4920
0.4750
0.4460
0.4210
–9.0
–15.8
–22.8
–27.5
–31.5
–36.0
–39.6
–42.7
–46.3
–49.7
–55.2
–53.7
–62.6
–66.1
–72.9
61.0
56.5
50.5
45.5
4
2SC4956
S-PARAMETER
(VCE = 3 V, IC = 5 mA, ZO = 50 Ω)
f
S11
S21
S12
S22
(GHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
0.200
0.400
0.600
0.800
1.000
1.200
1.400
1.600
1.800
2.000
2.200
2.400
2.600
2.800
3.000
0.8040
0.6940
0.5950
0.4830
0.4210
0.3410
0.2810
0.2770
0.1840
0.1300
0.0880
0.0540
0.0190
0.0200
0.0450
–16.5
–28.1
–39.3
–46.5
–53.1
–58.3
–63.4
–68.8
–64.8
–61.9
–78.7
–98.6
–67.4
132.7
106.6
10.2510
8.6340
7.5490
6.5000
5.6980
5.1160
4.5060
4.0840
3.6580
3.3690
3.1690
2.9460
2.7220
2.5900
2.4410
157.1
138.6
125.1
113.2
103.3
94.6
87.8
80.7
74.0
68.8
63.1
57.9
53.5
47.8
42.7
0.0200
0.0420
0.0580
0.0670
0.0830
0.0930
0.1030
0.1150
0.1260
0.1400
0.1490
0.1690
0.1760
0.1770
0.2010
76.7
74.7
67.5
65.6
63.1
56.9
59.5
57.4
53.5
48.5
49.1
47.0
45.3
42.8
40.2
0.9490
0.8910
0.8100
0.7490
0.6800
0.6330
0.6050
0.5710
0.5390
0.5090
0.4840
0.4710
0.4450
0.4290
0.4000
–10.8
–18.4
–24.7
–28.0
–32.4
–35.5
–37.9
–41.0
–43.3
–47.4
–53.6
–53.8
–60.7
–63.6
–72.4
5
2SC4956
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
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