2SC5337-QS-A [NEC]

RF Small Signal Bipolar Transistor, 0.25A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, POWER, MINIMOLD PACKAGE-4;
2SC5337-QS-A
型号: 2SC5337-QS-A
厂家: NEC    NEC
描述:

RF Small Signal Bipolar Transistor, 0.25A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, POWER, MINIMOLD PACKAGE-4

晶体 放大器 小信号双极晶体管 射频小信号双极晶体管
文件: 总8页 (文件大小:61K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
PRELIMINARY DATA SHEET  
Silicon Transistor  
2SC5337  
NPN EPITAXIAL SILICON TRANSISTOR  
HIGH FREQUENCY LOW DISTORTION AMPLIFIER  
DESCRIPTION  
The 2SC5337 is a high-frequency transistor designed for a low distortion and low noise amplifier on the VHF to  
UHF band, which is suitable for the CATV, tele-communication, and such.  
FEATURES  
PACKAGE DIMENSIONS  
(in millimeters)  
Low distortion  
IM2 = 59 dB TYP. @VCE = 10 V, IC = 50 mA  
IM3 = 82 dB TYP. @VCE = 10 V, IC = 50 mA  
4.5±0.1  
1.6±0.2  
1.5±0.1  
Low noise  
NF = 1.5 dB TYP. @VCE = 10 V, IC = 10 mA, f = 1 GHz  
New power mini-mold package version of a 4-pin type  
C
B
gain-improved on the 2SC3356  
E
E
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)  
0.42  
±0.06  
0.42  
±0.06  
0.25±0.02  
Parameter  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
Unit  
V
1.5  
3.0  
0.46  
±0.06  
30  
15  
V
3.0  
V
250  
mA  
W
PIN CONNECTIONS  
E: Emitter  
C: Collector  
B: Base  
Note1  
Total Power Dissipation  
Junction Temperature  
Storage Temperature  
PT  
2.0  
Tj  
150  
°C  
°C  
Tstg  
–65 to +150  
2
Note 1  
×
. 0.7 mm 16 cm double sided ceramic substrate (Copper plaiting)  
Document No. P10939EJ1V0DS00 (1st edition)  
Date Published April 1996 P  
Printed in Japan  
©
1996  
2SC5337  
ELECTRICAL CHARACTERISTICS (TA = 25 °C)  
Parameter  
Collector Cutoff Current  
Emitter Cutoff Current  
DC Current Gain  
Symbol  
ICBO  
Test Conditions  
VCB = 20 V, IE = 0  
MIN.  
TYP.  
0.01  
0.03  
120  
8.3  
MAX.  
5.0  
Unit  
µA  
IEBO  
VEB = 2 V, IC = 0  
5.0  
µA  
hFE  
VCE = 10 V, IC = 50 mANote2  
40  
200  
2
Insertion Power Gain  
Noise Figure 1  
| S21e  
NF1  
NF2  
IM2  
|
VCE = 10 V, IC = 50 mA, f = 1 GHz  
VCE = 10 V, IC = 50 mA, f = 500 MHzNote3  
VCE = 10 V, IC = 50 mA, f = 1 GHzNote3  
VCE = 10 V, IC = 50 mA, RS = RL = 75 Ω  
Pin = 105 dB µV/75 , f1 = 190 MHz  
f2 = 90 MHz, f = f1 f2  
7.0  
dB  
dB  
dB  
dB  
1.5  
3.5  
3.5  
Noise Figure 2  
2.0  
2nd Order  
Intermoduration  
Distortion  
59.0  
3rd Order  
Intermoduration  
Distortion  
IM3  
VCE = 10 V, IC = 50 mA, RS = RL = 75 Ω  
Pin = 105 dB µV/75 , f1 = 190 MHz  
f2 = 200 MHz, f = 2 × f1 f2  
82.0  
dB  
Notes 2  
3
µ
. Pulse measurement: PW 350 S, Duty Cycle 2 %  
. RS = RL = 50 , tuned  
hFE Classification  
Rank  
Marking  
hFE  
QQ  
QR  
QR  
QS  
QS  
QQ  
40 to 80  
60 to 120  
100 to 200  
2
2SC5337  
TYPICAL CHARACTERISTICS (TA = 25 °C)  
3
2SC5337  
COLLECTOR CURRENT vs.  
COLLECTOR TO EMITTER VOLTAGE  
DC CURRENT GAIN vs.  
COLLECTOR CURRENT  
300  
I
B
= 0.6 mA  
0.5 mA  
VCE = 10 V  
100  
80  
60  
40  
20  
0.4 mA  
100  
50  
0.3 mA  
0.2 mA  
0.1 mA  
10  
0.1  
0
10  
CE - Collector to Emitter Voltage - V  
20  
1
10  
100  
1000  
V
I
C - Collector Current - mA  
GAIN BANDWIDTH PRODUCT vs.  
COLLECTOR CURRENT  
FEED-BACK CAPACITANCE vs.  
COLLECTOR TO BASE VOLTAGE  
10  
5
5.0  
V
CE = 10 V  
f = 1.0 MH  
Z
f = 1 GH  
Z
3.0  
2.0  
3
2
1.0  
1
0.5  
0.3  
0.5  
0.3  
10  
30  
50 70 100  
1
3
5
10  
20 30  
I
C - Collector Current - mA  
VCB - Collector to Bese Voltage - V  
INSERTION POWER GAIN vs.  
COLLECTOR CURRENT  
INSERTION POWER GAIN  
MAXIMUM AVAILABLE GAIN vs. FREQUENCY  
V
CE = 10 V  
2
S21e  
f = 1 GH  
Z
10  
MAG  
20  
10  
5
V
CE = 10 V  
I
C
= 50 mA  
0
0
10  
30  
50 70 100  
0.2  
0.4 0.6 0.8 10 14 2.0  
I
C - Collector Current - mA  
f - Frequency - GH  
Z
4
2SC5337  
3RD ORDER INTERMODULATION DISTORTION,  
2ND ORDER INTERMODULATION DISTORTION ( + ) AND  
2ND ORDER INTERMODULATION DISTORTION ( – ) vs.  
COLLECTOR CURRENT  
NOISE FIGURE vs. COLLECTOR CURRENT  
80  
7
6
5
4
3
2
V
CE = 10 V  
IM3  
f = 1 GH  
Z
70  
60  
50  
IM2+  
IM2–  
µ
= 110 dB V/75 2 tone each  
IM  
3
: V  
O
f = 2 × 190 MHz – 200MH  
Z
µ
= 105 dB V/75 2 tone each  
IM2+: V  
f = 90 MHz + 100MH  
IM2–: V = 105 dB V/75 2 tone each  
f = 190 MHz – 90MH  
CE = 10 V  
O
40  
30  
Z
1
0
O
µ
Z
V
5
10  
20  
50  
100  
10  
50 100  
- Collector Current - mA  
300  
I
C
- Collector Current - mA  
I
C
5
2SC5337  
S-PARAMETER  
VCE = 10 V, f = 1 GHz  
S11  
S21  
S12  
S22  
IC (mA)  
10.0  
MAG  
.553  
.500  
.490  
.490  
.492  
ANG  
175.2  
168.1  
166.3  
165.3  
164.8  
MAG  
2.007  
2.492  
2.561  
2.640  
2.601  
ANG  
64.7  
68.0  
68.1  
69.0  
68.6  
MAG  
.127  
.156  
.158  
.167  
.162  
ANG  
67.4  
69.9  
70.3  
71.2  
69.3  
MAG  
.336  
.247  
.223  
.253  
.225  
ANG  
91.0  
122.5  
131.3  
136.0  
138.1  
30.0  
50.0  
70.0  
100.0  
VCE = 10 V, IC = 50 mA  
S11  
S21  
S12  
S22  
f (MHz)  
MAG  
.592  
.577  
.566  
.558  
.554  
.542  
.527  
.519  
.509  
.514  
.498  
.494  
.487  
.467  
.477  
.471  
.467  
.469  
.465  
.468  
ANG  
136.6  
160.0  
168.5  
174.0  
177.5  
179.4  
177.9  
175.8  
174.4  
171.0  
166.8  
167.3  
161.7  
160.4  
157.4  
154.5  
152.5  
151.3  
149.1  
147.0  
MAG  
24.447  
12.746  
8.591  
6.438  
5.160  
4.312  
3.729  
3.292  
2.983  
2.759  
2.648  
2.665  
2.478  
2.177  
1.973  
1.815  
1.754  
1.639  
1.568  
1.475  
ANG  
108.4  
96.5  
91.2  
87.2  
84.1  
82.3  
80.9  
78.7  
77.7  
76.6  
75.4  
71.3  
63.0  
60.1  
57.9  
57.2  
55.3  
54.4  
53.4  
52.6  
MAG  
.030  
.042  
.055  
.066  
.083  
.095  
.112  
.123  
.136  
.151  
.166  
.180  
.194  
.216  
.230  
.240  
.260  
.273  
.285  
.289  
ANG  
50.5  
57.4  
67.3  
70.8  
68.6  
70.6  
71.2  
74.6  
75.0  
75.3  
75.8  
74.7  
75.9  
74.7  
74.9  
73.2  
72.9  
70.5  
69.9  
69.3  
MAG  
.465  
.335  
.276  
.269  
.262  
.262  
.251  
.252  
.252  
.257  
.278  
.306  
.314  
.273  
.281  
.291  
.316  
.312  
.316  
.323  
ANG  
100  
200  
95.2  
123.0  
130.1  
132.7  
134.5  
139.1  
133.4  
132.9  
124.6  
125.3  
118.4  
120.2  
124.2  
124.0  
123.2  
120.2  
118.7  
123.1  
125.5  
126.3  
300  
400  
500  
600  
700  
800  
900  
1000  
1100  
1200  
1300  
1400  
1500  
1600  
1700  
1800  
1900  
2000  
6
2SC5337  
S-PARAMETER  
VCE = 10 V, IC = 100 mA  
S11  
S21  
S12  
S22  
f (MHz)  
100  
MAG  
.564  
.586  
.576  
.561  
.550  
.540  
.538  
.521  
.510  
.524  
.502  
.489  
.488  
.472  
.480  
.470  
.465  
.464  
.460  
.466  
ANG  
146.0  
165.8  
171.9  
176.3  
179.9  
178.2  
175.7  
174.6  
173.2  
168.5  
165.2  
165.9  
161.1  
157.9  
155.3  
153.4  
151.1  
149.5  
147.9  
146.0  
MAG  
24.857  
12.845  
8.681  
6.541  
5.209  
4.358  
3.772  
3.332  
3.037  
2.780  
2.680  
2.718  
2.578  
2.213  
2.012  
1.846  
1.745  
1.677  
1.571  
1.514  
ANG  
105.3  
94.5  
89.7  
86.3  
83.5  
82.2  
80.6  
78.4  
77.0  
76.9  
75.3  
72.3  
63.0  
58.7  
57.8  
57.2  
56.5  
54.9  
53.3  
52.3  
MAG  
.019  
.026  
.041  
.048  
.060  
.069  
.086  
.099  
.113  
.119  
.136  
.156  
.177  
.184  
.194  
.219  
.235  
.248  
.249  
.264  
ANG  
50.2  
59.6  
73.2  
77.8  
81.4  
82.0  
84.2  
85.1  
85.4  
83.5  
86.8  
83.5  
85.5  
81.8  
85.3  
82.2  
82.4  
79.0  
78.6  
77.4  
MAG  
.284  
.204  
.199  
.200  
.196  
.182  
.216  
.210  
.222  
.198  
.213  
.246  
.251  
.209  
.252  
.242  
.240  
.263  
.281  
.276  
ANG  
116.1  
129.9  
138.7  
140.1  
137.0  
137.6  
131.0  
130.5  
122.2  
120.1  
114.9  
114.9  
122.8  
127.2  
114.1  
117.6  
112.9  
121.9  
120.0  
124.0  
200  
300  
400  
500  
600  
700  
800  
900  
1000  
1100  
1200  
1300  
1400  
1500  
1600  
1700  
1800  
1900  
2000  
7
2SC5337  
No part of this document may be copied or reproduced in any form or by any means without the prior written  
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this  
document.  
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property  
rights of third parties by or arising from use of a device described herein or any other liability arising from use of  
such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other  
intellectual property rights of NEC Corporation or others.  
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,  
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or  
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety  
measures in its design, such as redundancy, fire-containment, and anti-failure features.  
NEC devices are classified into the following three quality grades:  
“Standard”, “Special”, and “Specific”. The Specific quality grade applies only to devices developed based on a  
customer designated "quality assurance program" for a specific application. The recommended applications of a  
device depend on its quality grade, as indicated below. Customers must check the quality grade of each device  
before using it in a particular application.  
Standard : Computers, office equipment, communications equipment, test and measurement equipment,  
audio and visual equipment, home electronic appliances, machine tools, personal electronic  
equipment and industrial robots  
Special:  
Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support)  
Specific:  
Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems or medical equipment for life support, etc.  
The quality grade of NEC devices in “Standard” unless otherwise specified in NEC's Data Sheets or Data Books.  
If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they  
should contact NEC Sales Representative in advance.  
Anti-radioactive design is not implemented in this product.  
M4 94.11  

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