2SC5337-QS-A [NEC]
RF Small Signal Bipolar Transistor, 0.25A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, POWER, MINIMOLD PACKAGE-4;型号: | 2SC5337-QS-A |
厂家: | NEC |
描述: | RF Small Signal Bipolar Transistor, 0.25A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, POWER, MINIMOLD PACKAGE-4 晶体 放大器 小信号双极晶体管 射频小信号双极晶体管 |
文件: | 总8页 (文件大小:61K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PRELIMINARY DATA SHEET
Silicon Transistor
2SC5337
NPN EPITAXIAL SILICON TRANSISTOR
HIGH FREQUENCY LOW DISTORTION AMPLIFIER
DESCRIPTION
The 2SC5337 is a high-frequency transistor designed for a low distortion and low noise amplifier on the VHF to
UHF band, which is suitable for the CATV, tele-communication, and such.
FEATURES
PACKAGE DIMENSIONS
(in millimeters)
•
Low distortion
IM2 = 59 dB TYP. @VCE = 10 V, IC = 50 mA
IM3 = 82 dB TYP. @VCE = 10 V, IC = 50 mA
4.5±0.1
1.6±0.2
1.5±0.1
•
Low noise
NF = 1.5 dB TYP. @VCE = 10 V, IC = 10 mA, f = 1 GHz
•
New power mini-mold package version of a 4-pin type
C
B
gain-improved on the 2SC3356
E
E
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
0.42
±0.06
0.42
±0.06
0.25±0.02
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
1.5
3.0
0.46
±0.06
30
15
V
3.0
V
250
mA
W
PIN CONNECTIONS
E: Emitter
C: Collector
B: Base
Note1
Total Power Dissipation
Junction Temperature
Storage Temperature
PT
2.0
Tj
150
°C
°C
Tstg
–65 to +150
2
Note 1
×
. 0.7 mm 16 cm double sided ceramic substrate (Copper plaiting)
Document No. P10939EJ1V0DS00 (1st edition)
Date Published April 1996 P
Printed in Japan
©
1996
2SC5337
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
ICBO
Test Conditions
VCB = 20 V, IE = 0
MIN.
TYP.
0.01
0.03
120
8.3
MAX.
5.0
Unit
µA
IEBO
VEB = 2 V, IC = 0
5.0
µA
hFE
VCE = 10 V, IC = 50 mANote2
40
200
2
Insertion Power Gain
Noise Figure 1
| S21e
NF1
NF2
IM2
|
VCE = 10 V, IC = 50 mA, f = 1 GHz
VCE = 10 V, IC = 50 mA, f = 500 MHzNote3
VCE = 10 V, IC = 50 mA, f = 1 GHzNote3
VCE = 10 V, IC = 50 mA, RS = RL = 75 Ω
Pin = 105 dB µV/75 Ω, f1 = 190 MHz
f2 = 90 MHz, f = f1 − f2
7.0
dB
dB
dB
dB
1.5
3.5
3.5
Noise Figure 2
2.0
2nd Order
Intermoduration
Distortion
59.0
3rd Order
Intermoduration
Distortion
IM3
VCE = 10 V, IC = 50 mA, RS = RL = 75 Ω
Pin = 105 dB µV/75 Ω, f1 = 190 MHz
f2 = 200 MHz, f = 2 × f1 − f2
82.0
dB
Notes 2
3
≤
µ
≤
. Pulse measurement: PW 350 S, Duty Cycle 2 %
Ω
. RS = RL = 50 , tuned
hFE Classification
Rank
Marking
hFE
QQ
QR
QR
QS
QS
QQ
40 to 80
60 to 120
100 to 200
2
2SC5337
TYPICAL CHARACTERISTICS (TA = 25 °C)
3
2SC5337
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
DC CURRENT GAIN vs.
COLLECTOR CURRENT
300
I
B
= 0.6 mA
0.5 mA
VCE = 10 V
100
80
60
40
20
0.4 mA
100
50
0.3 mA
0.2 mA
0.1 mA
10
0.1
0
10
CE - Collector to Emitter Voltage - V
20
1
10
100
1000
V
I
C - Collector Current - mA
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
10
5
5.0
V
CE = 10 V
f = 1.0 MH
Z
f = 1 GH
Z
3.0
2.0
3
2
1.0
1
0.5
0.3
0.5
0.3
10
30
50 70 100
1
3
5
10
20 30
I
C - Collector Current - mA
VCB - Collector to Bese Voltage - V
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
INSERTION POWER GAIN
MAXIMUM AVAILABLE GAIN vs. FREQUENCY
V
CE = 10 V
2
S21e
f = 1 GH
Z
10
MAG
20
10
5
V
CE = 10 V
I
C
= 50 mA
0
0
10
30
50 70 100
0.2
0.4 0.6 0.8 10 14 2.0
I
C - Collector Current - mA
f - Frequency - GH
Z
4
2SC5337
3RD ORDER INTERMODULATION DISTORTION,
2ND ORDER INTERMODULATION DISTORTION ( + ) AND
2ND ORDER INTERMODULATION DISTORTION ( – ) vs.
COLLECTOR CURRENT
NOISE FIGURE vs. COLLECTOR CURRENT
80
7
6
5
4
3
2
V
CE = 10 V
IM3
f = 1 GH
Z
70
60
50
IM2+
IM2–
µ
= 110 dB V/75 Ω 2 tone each
IM
3
: V
O
f = 2 × 190 MHz – 200MH
Z
µ
= 105 dB V/75 Ω 2 tone each
IM2+: V
f = 90 MHz + 100MH
IM2–: V = 105 dB V/75 Ω 2 tone each
f = 190 MHz – 90MH
CE = 10 V
O
40
30
Z
1
0
O
µ
Z
V
5
10
20
50
100
10
50 100
- Collector Current - mA
300
I
C
- Collector Current - mA
I
C
5
2SC5337
S-PARAMETER
VCE = 10 V, f = 1 GHz
S11
S21
S12
S22
IC (mA)
10.0
MAG
.553
.500
.490
.490
.492
ANG
175.2
168.1
166.3
165.3
164.8
MAG
2.007
2.492
2.561
2.640
2.601
ANG
64.7
68.0
68.1
69.0
68.6
MAG
.127
.156
.158
.167
.162
ANG
67.4
69.9
70.3
71.2
69.3
MAG
.336
.247
.223
.253
.225
ANG
−
91.0
122.5
131.3
136.0
138.1
−
30.0
−
−
−
50.0
70.0
100.0
VCE = 10 V, IC = 50 mA
S11
S21
S12
S22
f (MHz)
MAG
.592
.577
.566
.558
.554
.542
.527
.519
.509
.514
.498
.494
.487
.467
.477
.471
.467
.469
.465
.468
ANG
136.6
160.0
168.5
174.0
177.5
179.4
177.9
175.8
174.4
171.0
166.8
167.3
161.7
160.4
157.4
154.5
152.5
151.3
149.1
147.0
MAG
24.447
12.746
8.591
6.438
5.160
4.312
3.729
3.292
2.983
2.759
2.648
2.665
2.478
2.177
1.973
1.815
1.754
1.639
1.568
1.475
ANG
108.4
96.5
91.2
87.2
84.1
82.3
80.9
78.7
77.7
76.6
75.4
71.3
63.0
60.1
57.9
57.2
55.3
54.4
53.4
52.6
MAG
.030
.042
.055
.066
.083
.095
.112
.123
.136
.151
.166
.180
.194
.216
.230
.240
.260
.273
.285
.289
ANG
50.5
57.4
67.3
70.8
68.6
70.6
71.2
74.6
75.0
75.3
75.8
74.7
75.9
74.7
74.9
73.2
72.9
70.5
69.9
69.3
MAG
.465
.335
.276
.269
.262
.262
.251
.252
.252
.257
.278
.306
.314
.273
.281
.291
.316
.312
.316
.323
ANG
−
−
−
−
−
−
−
100
200
95.2
123.0
130.1
132.7
134.5
139.1
133.4
132.9
124.6
125.3
118.4
120.2
124.2
124.0
123.2
120.2
118.7
123.1
125.5
126.3
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
6
2SC5337
S-PARAMETER
VCE = 10 V, IC = 100 mA
S11
S21
S12
S22
f (MHz)
100
MAG
.564
.586
.576
.561
.550
.540
.538
.521
.510
.524
.502
.489
.488
.472
.480
.470
.465
.464
.460
.466
ANG
146.0
165.8
171.9
176.3
179.9
178.2
175.7
174.6
173.2
168.5
165.2
165.9
161.1
157.9
155.3
153.4
151.1
149.5
147.9
146.0
MAG
24.857
12.845
8.681
6.541
5.209
4.358
3.772
3.332
3.037
2.780
2.680
2.718
2.578
2.213
2.012
1.846
1.745
1.677
1.571
1.514
ANG
105.3
94.5
89.7
86.3
83.5
82.2
80.6
78.4
77.0
76.9
75.3
72.3
63.0
58.7
57.8
57.2
56.5
54.9
53.3
52.3
MAG
.019
.026
.041
.048
.060
.069
.086
.099
.113
.119
.136
.156
.177
.184
.194
.219
.235
.248
.249
.264
ANG
50.2
59.6
73.2
77.8
81.4
82.0
84.2
85.1
85.4
83.5
86.8
83.5
85.5
81.8
85.3
82.2
82.4
79.0
78.6
77.4
MAG
.284
.204
.199
.200
.196
.182
.216
.210
.222
.198
.213
.246
.251
.209
.252
.242
.240
.263
.281
.276
ANG
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
116.1
129.9
138.7
140.1
137.0
137.6
131.0
130.5
122.2
120.1
114.9
114.9
122.8
127.2
114.1
117.6
112.9
121.9
120.0
124.0
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
7
2SC5337
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use of
such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard”, “Special”, and “Specific”. The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of a
device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard : Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special:
Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific:
Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard” unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they
should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
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