2SC5337-T1-A [NEC]
RF Small Signal Bipolar Transistor, 0.25A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, POWER, MINIMOLD PACKAGE-4;
| 型号： | 2SC5337-T1-A |
| 厂家： | 
NEC |
| 描述： | RF Small Signal Bipolar Transistor, 0.25A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, POWER, MINIMOLD PACKAGE-4 |
| 文件： | 总8页 (文件大小：49K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
NPN SILICON RF TRANSISTOR
2SC5337
NPN SILICON RF TRANSISTOR FOR
HIGH-FREQUENCY LOW DISTORTION AMPLIFIER
4-PIN POWER MINIMOLD
FEATURES
•
•
Low distortion: IM2 = 59.0 dB TYP., IM3 = 82.0 dB TYP. @ VCE = 10 V, IC = 50 mA
Low noise
NF = 1.5 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 500 MHz
NF = 2.0 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 1 GHz
4-pin power minimold package with improved gain from the 2SC4536
•
ORDERING INFORMATION
Part Number
Quantity
Supplying Form
2SC5337
25 pcs (Non reel)
1 kpcs/reel
• Magazine case
2SC5337-T1
• 12 mm wide embossed taping
• Collector face the perforation side of the tape
Remark To order evaluation samples, consult your NEC sales representative.
Unit sample quantity is 25 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
V
30
15
V
3.0
V
250
mA
W
P
tot Note
2.0
Total Power Dissipation
Junction Temperature
Storage Temperature
Tj
150
°C
°C
Tstg
−65 to +150
Note Mounted on 16 cm2 × 0.7 mm (t) ceramic substrate (Copper plating)
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P10939EJ2V1DS00 (2nd edition)
Date Published September 2001 NS CP(K)
The mark • shows major revised points.
1996, 2001
©
Printed in Japan
2SC5337
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter
DC Characteristics
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
ICBO
IEBO
h
VCB = 20 V, IE = 0 mA
VBE = 2 V, IC = 0 mA
–
–
0.01
0.03
120
5.0
5.0
200
µA
µA
–
FE Note 1
CE
C
V
= 10 V, I = 50 mA
40
RF Characteristics
Insertion Power Gain
Noise Figure (1)
2
S
21e
V
CE
= 10 V, I = 50 mA, f = 1 GHz
C
7.0
–
8.3
1.5
–
dB
dB
dB
dB
NFNote 2 VCE = 10 V, IC = 50 mA, f = 500 MHz
NFNote 2 VCE = 10 V, IC = 50 mA, f = 1 GHz
3.5
3.5
–
Noise Figure (2)
–
2.0
VCE = 10 V, IC = 50 mA, RS = RL = 75 Ω,
Vin = 105 dBµV/75 Ω, f1 = 190 MHz,
f2 = 90 MHz, f = f1 − f2
2nd Order Intermoduration
Distortion
IM2
–
59.0
VCE = 10 V, IC = 50 mA, RS = RL = 75 Ω,
Vin = 105 dBµV/75 Ω, f1 = 190 MHz,
f2 = 200 MHz, f = 2 × f1 − f2
3rd Order Intermoduration Distortion
IM3
–
82.0
–
dB
Notes 1. Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2%
2. RS = RL = 50 Ω, tuned
hFE CLASSIFICATION
Rank
QQ
QQ
QR
QR
QS
QS
Marking
hFE Value
40 to 80
60 to 120
100 to 200
2
Data Sheet P10939EJ2V1DS
2SC5337
TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
5.0
Mounted on Ceramic Substrate
f = 1 MHz
(16 cm2 × 0.7 mm (t) )
3.0
2.0
2.0
1.0
1.0
0.5
0.3
0
50
100
150
1
3
5
10
20 30
Ambient Temperature T
A
(˚C)
Collector to Base Voltage VCB (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
DC CURRENT GAIN vs.
COLLECTOR CURRENT
300
IB = 0.6 mA
V
CE = 10 V
0.5 mA
0.4 mA
100
80
60
40
20
100
50
0.3 mA
0.2 mA
0.1 mA
10
0.1
0
10
20
1
10
100
(mA)
1 000
Collector to Emitter Voltage VCE (V)
Collector Current I
C
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
10
5
V
CE = 10 V
f = 1 GHz
10
3
2
1
5
0
0.5
0.3
V
CE = 10 V
f = 1 GHz
10
30
50 70 100
(mA)
10
30
50 70 100
(mA)
Collector Current I
C
Collector Current I
C
3
Data Sheet P10939EJ2V1DS
2SC5337
NOISE FIGURE vs.
COLLECTOR CURRENT
INSERTION POWER GAIN, MAG
vs. FREQUENCY
7
6
5
4
3
2
V
CE = 10 V
V
CE = 10 V
f = 1 GHz
I
C
= 50 mA
2
|S21e
|
20
10
0
MAG
1
0
0.2
0.4 0.6 0.8 1.0 1.4 2.0
Frequency f (GHz)
5
10
20
50
(mA)
100
Collector Current I
C
IM
3, IM2+, IM2– vs.
COLLECTOR CURRENT
80
70
60
50
40
30
VCE = 10 V
IM
3
IM2+
IM2–
IM3
: Vin = 110 dBµV/75 Ω 2 tone each
f = 2 × 190 – 200 MHz
IM2+ : Vin = 105 dBµV/75 Ω 2 tone each
f = 90 + 100 MHz
IM2– : Vin = 105 dBµV/75 Ω 2 tone each
f = 190 – 90 MHz
10
50
100
(mA)
300
Collector Current I
C
Remark The graphs indicate nominal characteristics.
4
Data Sheet P10939EJ2V1DS
2SC5337
S-PARAMETERS
VCE = 10 V, IC = 50 mA
Frequency
S11
S21
S12
S22
(GHz)
MAG.
ANG.
(deg.)
MAG.
ANG.
(deg.)
MAG.
ANG.
(deg.)
MAG.
ANG.
(deg.)
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
0.592
0.577
0.566
0.558
0.554
0.542
0.527
0.519
0.509
0.514
0.498
0.494
0.487
0.467
0.477
0.471
0.467
0.469
0.465
0.468
−136.6
−160.0
−168.5
−174.0
−177.5
−179.4
177.9
175.8
174.4
171.0
166.8
167.3
161.7
160.4
157.4
154.5
152.5
151.3
149.1
147.0
24.447
12.746
8.591
6.438
5.160
4.312
3.729
3.292
2.983
2.759
2.648
2.665
2.478
2.177
1.973
1.815
1.754
1.639
1.568
1.475
108.4
96.5
91.2
87.2
84.1
82.3
80.9
78.7
77.7
76.6
75.4
71.3
63.0
60.1
57.9
57.2
55.3
54.4
53.4
52.6
0.030
0.042
0.055
0.066
0.083
0.095
0.112
0.123
0.136
0.151
0.166
0.180
0.194
0.216
0.230
0.240
0.260
0.273
0.285
0.289
50.5
57.4
67.3
70.8
68.6
70.6
71.2
74.6
75.0
75.3
75.8
74.7
75.9
74.7
74.9
73.2
72.9
70.5
69.9
69.3
0.465
0.335
0.276
0.269
0.262
0.262
0.251
0.252
0.252
0.257
0.278
0.306
0.314
0.273
0.281
0.291
0.316
0.312
0.316
0.323
−95.2
−123.0
−130.1
−132.7
−134.5
−139.1
−133.4
−132.9
−124.6
−125.3
−118.4
−120.2
−124.2
−124.0
−123.2
−120.2
−118.7
−123.1
−125.5
−126.3
VCE = 10 V, IC = 100 mA
Frequency
S11
S21
S12
S22
(GHz)
MAG.
ANG.
(deg.)
MAG.
ANG.
(deg.)
MAG.
ANG.
(deg.)
MAG.
ANG.
(deg.)
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
0.564
0.586
0.576
0.561
0.550
0.540
0.538
0.521
0.510
0.524
0.502
0.489
0.488
0.472
0.480
0.470
0.465
0.464
0.460
0.466
−146.0
−165.8
−171.9
−176.3
179.9
178.2
175.7
174.6
173.2
168.5
165.2
165.9
161.1
157.9
155.3
153.4
151.1
149.5
147.9
146.0
24.857
12.845
8.681
6.541
5.209
4.358
3.772
3.332
3.037
2.780
2.680
2.718
2.578
2.213
2.012
1.846
1.745
1.677
1.571
1.514
105.3
94.5
89.7
86.3
83.5
82.2
80.6
78.4
77.0
76.9
75.3
72.3
63.0
58.7
57.8
57.2
56.5
54.9
53.3
52.3
0.019
0.026
0.041
0.048
0.060
0.069
0.086
0.099
0.113
0.119
0.136
0.156
0.177
0.184
0.194
0.219
0.235
0.248
0.249
0.264
50.2
59.6
73.2
77.8
81.4
82.0
84.2
85.1
85.4
83.5
86.8
83.5
85.5
81.8
85.3
82.2
82.4
79.0
78.6
77.4
0.284
0.204
0.199
0.200
0.196
0.182
0.216
0.210
0.222
0.198
0.213
0.246
0.251
0.209
0.252
0.242
0.240
0.263
0.281
0.276
−116.1
−129.9
−138.7
−140.1
−137.0
−137.6
−131.0
−130.5
−122.2
−120.1
−114.9
−114.9
−122.8
−127.2
−114.1
−117.6
−112.9
−121.9
−120.0
−124.0
5
Data Sheet P10939EJ2V1DS
2SC5337
PACKAGE DIMENSIONS
4-PIN POWER MINIMOLD (UNIT: mm)
4.5±0.1
2.1
1.6
0.8
1.5±0.1
C
B
E
E
0.46
±0.06
0.25±0.02
0.42±0.06
0.42±0.06
1.5
3.0
PIN CONNECTIONS
E: Emitter
C: Collector
B: Base
6
Data Sheet P10939EJ2V1DS
2SC5337
[MEMO]
7
Data Sheet P10939EJ2V1DS
2SC5337
•
The information in this document is current as of September, 2001. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
•
•
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
•
•
•
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
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agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
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Customers must check the quality grade of each semiconductor product before using it in a particular
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"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
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The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
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(Note)
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M8E 00. 4
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