2SK2826-ZJ-AZ [NEC]

Power Field-Effect Transistor, 70A I(D), 60V, 0.0097ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, MP-25ZJ, 3 PIN;


型号：	2SK2826-ZJ-AZ
厂家：	NEC
描述：	Power Field-Effect Transistor, 70A I(D), 60V, 0.0097ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, MP-25ZJ, 3 PIN 晶体晶体管功率场效应晶体管开关脉冲局域网
文件：	总8页 (文件大小：76K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK2826

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

ORDERING INFORMATION

PART NUMBER

2SK2826

DESCRIPTION

This product is N-Channel MOS Field Effect Transistor

designed for high current switching applications.

PACKAGE

TO-220AB

TO-262

2SK2826-S

FEATURES

• Super Low On-State Resistance

2SK2826-ZJ

TO-263

DS(on)1

= 6.5 mΩ (MAX.) (V = 10 V, I = 35 A)

DS(on)2

= 9.7 mΩ (MAX.) (V = 4.0 V, I = 35 A)

iss

• Low C : C = 7200 pF (TYP.)

• Built-in Gate Protection Diode

ABSOLUTE MAXIMUM RATINGS (T^A= 25 °C)

DSS

Drain to Source Voltage (V = 0 V)

GSS(AC)

Gate to Source Voltage (V = 0 V)

±20

+20, –10

±70

GSS(DC)

Gate to Source Voltage (V = 0 V)

D(DC)

Drain Current (DC)

Drain Current (Pulse) ^Note1

D(pulse)

±280

Total Power Dissipation (T = 25°C)

100

°C

Total Power Dissipation (T = 25°C)

1.5

Channel Temperature

150

stg

Storage Temperature

–55 to + 150

Single Avalanche Current ^Note2

Single Avalanche Energy ^Note2

490

Notes 1. PW ≤ 10 µ s, Duty cycle ≤ 1 %

2. Starting Tch = 25 °C, R = 25 Ω, V = 20 V → 0 V

THERMAL RESISTANCE

Channel to Case

R (ch-C)

1.25

83.3

°C/W

Channel to Ambient

R (ch-A)

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No.

Date Published April 1999 NS CP(K)

Printed in Japan

D11273EJ2V0DS00 (2nd edition)

The mark • shows major revised points.

1998

2SK2826

ELECTRICAL CHARACTERISTICS (T^A= 25 °C)

CHARACTERISTICS

SYMBOL

R^DS(on)1

R^DS(on)2

V^GS(off)

| y^fs|

I^DSS

TEST CONDITIONS

V^GS= 10 V, I^D= 35 A

MIN. TYP. MAX.

UNIT

mΩ

Drain to Source On-state Resistance

5.5

7.0

1.5

6.5

9.7

2.0

•

V^GS= 4.0 V, I^D= 35 A

V^DS= 10 V, I^D= 1 mA

V^DS= 10 V, I^D= 35 A

V^DS= 60 V, V^GS= 0 V

V^GS= ±20 V, V^DS= 0 V

V^DS= 10 V

Gate to Source Cut-off Voltage

Forward Transfer Admittance

Drain Leakage Current

Gate to Source Leakage Current

Input Capacitance

1.0

µ A

I^GSS

±10

C^iss

7200

2000

700

100

1200

440

520

150

Output Capacitance

C^oss

C^rss

V^GS= 0 V

Reverse Transfer Capacitance

Turn-on Delay Time

f = 1 MHz

t^d(on)

t^r

t^d(off)

t^f

I^D= 35 A

•

Rise Time

V^GS(on)= 10 V

•

Turn-off Delay Time

V^DD= 30 V

Fall Time

R^G= 10 Ω

Total Gate Charge

Q^G

I^D= 70 A

Gate to Source Charge

Gate to Drain Charge

Body Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

Q^GS

Q^GD

V^F(S-D)

t^rr

V^DD= 48 V

V^GS= 10 V

I^F= 70 A, V^GS= 0 V

di/dt = 100A/µ s

0.97

Q^rr

250

TEST CIRCUIT 1 AVALANCHE CAPABILITY

TEST CIRCUIT 2 SWITCHING TIME

D.U.T.

= 25 Ω

90%

Wave Form

VGS(on)

10%

PG.

50 Ω

RG = 10 Ω

VDD

VGS = 20V→0V

90%

BVDSS

10%

Wave Form

VDS

d(on)

d(off)

VDD

toff

t = 1 µs

Duty Cycle ≤ 1 %

Starting Tch

TEST CIRCUIT 3 GATE CHARGE

D.U.T.

= 2 mA

PG.

50 Ω

VDD

Data Sheet D11273EJ2V0DS00

2SK2826

TYPICAL CHARACTERISTICS (T^A= 25 °C)

DERATING FACTOR OF FORWARD BIAS

SAFE OPERATING AREA

TOTAL POWER DISSIPATION vs.

CASE TEMPERATURE

140

120

100

20 40 60 80 100 120 140 160

Case Temperature - ˚C

20 40 60 80 100 120 140 160

TC - Case Temperature - ˚C

DRAIN CURRENT vs.

DRAIN TO SOURCE VOLTAGE

FORWARD BIAS SAFE OPERATING AREA

1000

100

Pulsed

D(pulse)

100

Limited

R^DS(on)

^{(at VGS =10 V)}ID(DC)

VGS =10 V

GS = 4.0 V

= 25˚C

Single Pulse

0.4

0.8

0.1

100

0.6

0.2

Drain to Source Voltage - V

VDS - Drain to Source Voltage - V

FORWARD TRANSFER CHARACTERISTICS

Pulsed

1000

100

= -25˚C

25˚C

75˚C

125˚C

DS = 10 V

GS - Gate to Source Voltage - V

Data Sheet D11273EJ2V0DS00

2SK2826

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

1 000

100

th(ch A) = 83.3 ˚C/W

th(ch C) = 1.25 ˚C/W

0.1

0.01

Single Pulse

= 25˚C

0.001

10 µ

1 m

10 m

100 m

100

1 000

100 µ

PW - Pulse Width - s

FORWARD TRANSFER ADMITTANCE vs.

DRAIN CURRENT

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

GATE TO SOURCE VOLTAGE

100

Pulsed

DS=10V

Pulsed

GS = 0V

1.0

0.1

= 175˚C

75˚C

= 25˚C

25˚C

= 35 A

-25˚C

0.1

1.0

100

- Drain Current - A

VGS - Gate to Source Voltage - V

DRAIN TO SOURCE ON-STATE

RESISTANCE vs. DRAIN CURRENT

GATE TO SOURCE CUTOFF VOLTAGE vs.

CHANNEL TEMPERATURE

Pulsed

DS = 10 V

= 1 mA

2.0

1.5

1.0

GS = 4.0 V

0.5

GS = 10 V

1000

100

D - Drain Current - A

- 50

100

150

200

ch - Channel Temperature - ˚C

Data Sheet D11273EJ2V0DS00

2SK2826

SOURCE TO DRAIN DIODE FORWARD VOLTAGE

Pulsed

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

CHANNEL TEMPERATURE

100

VGS = 10 V

VGS = 4.0 V

VGS = 0 V

VGS = 10 V

0.1

I^D= 25 A

150

- 50

100

1.5

1.0

0.5

T^ch- Channel Temperature - ˚C

VSD - Source to Drain Voltage - V

CAPACITANCE vs. DRAIN TO

SOURCE VOLTAGE

SWITCHING CHARACTERISTICS

•

100 000

10 000

1 000

VGS = 0 V

f = 1 MHz

Ciss

td(off)

Coss

Crss

td(on)

1 000

100

VDD = 30 V

V^GS= 10 V

RG = 10 Ω

0.1

100

0.1

V^DS- Drain to Source Voltage - V

I^D- Drain Current - A

REVERSE RECOVERY TIME vs.

DRAIN CURRENT

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

1000

100

di/dt = 100 A/µs

V^GS= 0 V

VGS

VDD = 48 V

30 V

12 V

VDS

0.1

1.0

100

150

200

I^F- Drain Current - A

Q^G- Gate Charge - nC

Data Sheet D11273EJ2V0DS00

2SK2826

SINGLE AVALANCHE ENERGY vs.

INDUCTIVE LOAD

SINGLE AVALANCHE ENERGY

DERATING FACTOR

160

100

DD = 30 V

= 25 Ω

GS = 20 V → 0 V

AS ≤ 70 A

AS = 70 A

140

120

100

1.0

= 30 V

^DG^DS = 20 V → 0 V

= 25 Ω

10 µ

100 µ

1 m

10 m

100

125

150

L - Inductive Load - H

Starting Tch - Starting Channel Temperature - ˚C

Data Sheet D11273EJ2V0DS00

2SK2826

PACKAGE DRAWINGS (Unit : mm)

1)TO-220AB (MP-25)

2)TO-262 (MP-25 Fin Cut)

4.8 MAX.

1.3±0.2

10.6 MAX.

10.0

4.8 MAX.

1.3±0.2

3.6±0.2

(10)

2 3

1.3±0.2

2.8±0.2

0.5±0.2

1.Gate

0.75±0.3

2.54 TYP.

0.75±0.1

0.5±0.2

2.8±0.2

2.54 TYP.

2.Drain

1.Gate

2.Drain

3.Source

4.Fin (Drain)

3.Source

4.Fin (Drain)

3)TO-263 (MP-25ZJ)

4.8 MAX.

(10)

1.3±0.2

EQUIVALENT CIRCUIT

Drain

Body

Diode

1.4±0.2

0.7±0.2

Gate

0.5±0.2

2.54 TYP.

Gate

Protection

Diode

1.Gate

2.Drain

3.Source

Source

4.Fin (Drain)

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage

exceeding the rated voltage may be applied to this device.

Data Sheet D11273EJ2V0DS00

2SK2826

• The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

• No part of this document may be copied or reproduced in any form or by any means without the prior written

consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in

this document.

• NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property

rights of third parties by or arising from use of a device described herein or any other liability arising from use

of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other

intellectual property rights of NEC Corporation or others.

• Descriptions of circuits, software, and other related information in this document are provided for illustrative

purposes in semiconductor product operation and application examples. The incorporation of these circuits,

software, and information in the design of the customer's equipment shall be done under the full responsibility

of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third

parties arising from the use of these circuits, software, and information.

• While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,

the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or

property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety

measures in its design, such as redundancy, fire-containment, and anti-failure features.

• NEC devices are classified into the following three quality grades:

"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a

customer designated "quality assurance program" for a specific application. The recommended applications of

a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device

before using it in a particular application.

Standard: Computers, office equipment, communications equipment, test and measurement equipment,

audio and visual equipment, home electronic appliances, machine tools, personal electronic

equipment and industrial robots

Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster

systems, anti-crime systems, safety equipment and medical equipment (not specifically designed

for life support)

Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life

support systems or medical equipment for life support, etc.

The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.

If customers intend to use NEC devices for applications other than those specified for Standard quality grade,

they should contact an NEC sales representative in advance.

M7 98. 8

2SK2826-ZJ-AZ [NEC]

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