2SK3353-S [NEC]

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE; 切换N沟道功率MOS FET工业用


型号：	2SK3353-S
厂家：	NEC
描述：	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE 切换N沟道功率MOS FET工业用开关
文件：	总4页 (文件大小：45K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK3353

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

DESCRIPTION

ORDERING INFORMATION

PART NUMBER

2SK3353

The 2SK3353 is N-channel MOS Field Effect Transistor

designed for high current switching applications.

PACKAGE

TO-220AB

TO-262

2SK3353-S

FEATURES

2SK3353-Z

TO-220SMD

• Super low on-state resistance:

DS(on)1

★

= 9.5 mΩ MAX. (V = 10 V, I = 41 A)

DS(on)2

= 14 mΩ MAX. (V = 4 V, I = 41 A)

iss

• Low C : C = 4650 pF TYP.

• Built-in gate protection diode

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

Drain to Source Voltage

V^DSS

V^GSS(AC)

I^D(DC)

I^D(pulse)

P^T

±20

Gate to Source Voltage

Drain Current (DC)

±82

★

Drain Current (pulse) ^Note1

Total Power Dissipation (T^C= 25°C)

Total Power Dissipation (T^A= 25°C)

Channel Temperature

±328

°C

P^T

1.5

T^ch

150

Storage Temperature

T^stg

–55 to +150

Single Avalanche Current ^Note2

Single Avalanche Energy ^Note2

I^AS

★

E^AS

202

Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 %

★

2. Starting T^ch= 25 °C, R^G= 25 Ω, V^GS= 20 V → 0 V

THERMAL RESISTANCE

Channel to Case

Rth(ch-C)

Rth(ch-A)

1.32

83.3

°C/W

Channel to Ambient

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No.

Date Published June 1999 NS CP(K)

Printed in Japan

D14130EJ1V0DS00 (1st edition)

The mark ★ shows major revised points.

1999

2SK3353

★

ELECTRICAL CHARACTERISTICS (T^A= 25 °C)

CHARACTERISTICS

SYMBOL

R^DS(on)1

R^DS(on)2

V^GS(off)

| y^fs|

I^DSS

TEST CONDITIONS

V^GS= 10V, I^D= 41 A

MIN. TYP. MAX. UNIT

Drain to Source On-state Resistance

7.5

10.5

2.0

9.5

mΩ

V^GS= 4V, I^D= 41 A

Gate to Source Cut-off Voltage

Forward Transfer Admittance

Drain Leakage Current

Gate to Source Leakage Current

Input Capacitance

V^DS= 10V, I^D= 1 mA

V^DS= 10V, I^D= 41 A

1.5

2.5

V^DS= 60V, V^GS= 0 V

V^GS= ±20 V, V^DS= 0 V

V^DS= 10 V, V^GS= 0 V, f = 1 MHz

µA

I^GSS

±10

C^iss

4650

780

380

100

1550

280

420

Output Capacitance

C^oss

C^rss

Reverse Transfer Capacitance

Turn-on Delay Time

t^d(on)

t^r

t^d(off)

t^f

I^D= 41 A, V^GS(on)= 10 V, V^DD= 30 V,

Rise Time

R^G= 10 Ω

Turn-off Delay Time

Fall Time

Total Gate Charge

Q^G

I^D= 82 A , V^DD= 48 V, V^GS= 10 V

Gate to Source Charge

Gate to Drain Charge

Body Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

Q^GS

Q^GD

V^F(S-D)

t^rr

I^F= 82 A, V^GS= 0 V

I^F= 82 A, V^GS= 0 V,

di/dt = 100 A/µs

1.0

Q^rr

110

TEST CIRCUIT 1 AVALANCHE CAPABILITY

TEST CIRCUIT 2 SWITCHING TIME

D.U.T.

= 25 Ω

90%

GS(on)

Wave Form

10%

PG.

50 Ω

RG = 10 Ω

VDD

VGS = 20→0V

90%

10%

BVDSS

Wave Form

VDS

d(on)

d(off)

toff

τ = 1 µs

Duty Cycle ≤ 1 %

Starting Tch

TEST CIRCUIT 3 GATE CHARGE

D.U.T.

= 2 mA

PG.

50 Ω

Data Sheet D14130EJ1V0DS00

2SK3353

PACKAGE DRAWING (Unit: mm)

1) TO-220AB (MP-25)

2) TO-262 (MP-25 Fin Cut)

4.8 MAX.

1.3±0.2

10.6 MAX.

3.6±0.2

4.8 MAX.

1.3±0.2

10.0

(10)

2 3

1.3±0.2

2.8±0.2

0.5±0.2

1.Gate

0.75±0.1

2.54 TYP.

0.5±0.2

2.8±0.2

0.75±0.3

2.54 TYP.

1.Gate

2.Drain

3.Source

4.Fin (Drain)

2.Drain

3.Source

4.Fin (Drain)

3) TO-220SMD (MP-25Z)

EQUIVALENT CIRCUIT

4.8 MAX.

(10)

1.3±0.2

Drain

Body

Diode

Gate

1.4±0.2

1.0±0.3

Gate

Protection

Diode

0.5±0.2

Source

2.54 TYP.

1.Gate

2.Drain

3.Source

4.Fin (Drain)

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage

exceeding the rated voltage may be applied to this device.

Data Sheet D14130EJ1V0DS00

2SK3353

• The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

• No part of this document may be copied or reproduced in any form or by any means without the prior written

consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in

this document.

• NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property

rights of third parties by or arising from use of a device described herein or any other liability arising from use

of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other

intellectual property rights of NEC Corporation or others.

• Descriptions of circuits, software, and other related information in this document are provided for illustrative

purposes in semiconductor product operation and application examples. The incorporation of these circuits,

software, and information in the design of the customer's equipment shall be done under the full responsibility

of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third

parties arising from the use of these circuits, software, and information.

• While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,

the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or

property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety

measures in its design, such as redundancy, fire-containment, and anti-failure features.

• NEC devices are classified into the following three quality grades:

"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a

customer designated "quality assurance program" for a specific application. The recommended applications of

a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device

before using it in a particular application.

Standard: Computers, office equipment, communications equipment, test and measurement equipment,

audio and visual equipment, home electronic appliances, machine tools, personal electronic

equipment and industrial robots

Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster

systems, anti-crime systems, safety equipment and medical equipment (not specifically designed

for life support)

Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life

support systems or medical equipment for life support, etc.

The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.

If customers intend to use NEC devices for applications other than those specified for Standard quality grade,

they should contact an NEC sales representative in advance.

M7 98. 8

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