2SK660 [NEC]

N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM; N沟道硅结型场效应晶体管为ECM的阻抗转换器


型号：	2SK660
厂家：	NEC
描述：	N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM N沟道硅结型场效应晶体管为ECM的阻抗转换器晶体转换器晶体管场效应晶体管
文件：	总8页 (文件大小：40K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DATA SHEET

JUNCTION FIELD EFFECT TRANSISTOR

2SK660

N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR

FOR IMPEDANCE CONVERTER OF ECM

DESCRIPTION

The 2SK660 is suitable for converter of ECM.

FEATURES

• Compact package

• High forward transfer admittance

| y | = 1200 µS TYP. (V = 5 V, I = 0 µA)

• Low capacitance

iss

= 4.5 pF (V = 5 V, V = 0 V, f = 1 MHz)

• Includes diode and high resistance at G - S

ORDERING INFORMATION

PART NUMBER

2SK660

PACKAGE

SST

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

Drain to Source Voltage ^Note

Gate to Drain Voltage

Drain Current

DSX

–20

EQUIVALENT CIRCUIT

GDO

°C

Drain

Gate Current

Total Power Dissipation

Junction Temperature

Storage Temperature

100

125

Gate

stg

–55 to +125 °C

Source

Note V^GS= –1.0 V

Remark Please take care of ESD (Electro Static Discharge) when you handle the device in this document.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D10753EJ2V0DS00 (2nd edition)

Date Published January 2002 NS CP(K)

Printed in Japan

2002

2SK660

ELECTRICAL CHARACTERISTICS (T^A= 25°C)

CHARACTERISTICS

Zero Gate Voltage Drain Cut-off Current

Gate Cut-off Voltage

SYMBOL

I^DSS

TEST CONDITIONS

V^DS= 5.0 V, V^GS= 0 V

MIN. TYP. MAX. UNIT

500

µA

V^GS(off)

| y^fs1|

| y^fs2|

C^iss

V^DS= 5.0 V, I^D= 1.0 µA

−1.0

Forward Transfer Admittance

Input Capacitance

V^DS= 5.0 V, I^D= 30 µA, f = 1.0 kHz

V^DS= 5.0 V, V^GS= 0 V, f = 1.0 kHz

150

µS

µV

1200

4.5

V^DS= 5.0 V

V^GS= 0 V

6.0

3.0

Output Capacitance

C^oss

1.5

f = 1.0 MHz

Reverse Transfer Capacitance

Noise Voltage

C^rss

1.2

See Test Circuit

1.0

NOISE VOLTAGE TEST CIRCUIT

+4.5 V

JIS A

NV (r.m.s)

R = 1 kΩ

C = 10 pF

Data Sheet D10753EJ2V0DS

2SK660

TYPICAL CHARACTERISTICS (T^A= 25°C)

DRAIN CURRENT vs.

DRAIN TO SOURCE VOLTAGE

TOTAL POWER DISSIPATION vs.

AMBIENT TEMPERATURE

120

500

400

300

200

100

0.15 V

0.10 V

0.05 V

100

GS = 0 V

−0.05 V

−0.10 V

−0.15 V

−0.20 V

−0.25 V

−0.30 V

120

150

180

DS - Drain to Source Voltage - V

- Ambient Temperature - ˚C

GATE TO SOURCE CURRENT vs.

GATE TO SOURCE VOLTAGE

DRAIN CURRENT vs.

GATE TO SOURCE VOLTAGE

1.0

0.8

0.6

0.4

0.2

DS = 5 V

−1.0 −0.8 −0.6 −0.4 −0.2

−10

0.2 0.4 0.6 0.8 1.0

−20

−30

−40

−0.4

−0.2

0.2

0.4

VGS - Gate to Source Voltage - V

GS - Gate to Source Voltage - V

FORWARD TRANSFER ADMITTANCE vs.

GATE TO SOURCE VOLTAGE

INPUT AND FEEDBACK CAPACITANCE vs.

DRAIN TO SOURCE VOLTAGE

3.0

2.5

2.0

1.5

1.0

0.5

DS = 0 V

DS = 5 V

f = 1.0 kHz

ISS

COSS

100

−0.4 −0.3 −0.2 −0.1

0.1 0.2 0.3 0.4

GS - Gate to Source Voltage -

V^DS- Drain to Source Voltage - V

Data Sheet D10753EJ2V0DS

2SK660

FORWARD TRANSFER ADMITTANCE AND

GATE TO SOURCE CUT-OFF VOLTAGE vs. ZERO-

GATE VOLTAGE DRAIN CURRENT CO-RELATION

10.0

VDS = 5 V

5.0

2.0

| yfs |

1.0

0.5

0.2

0.1

VGS (off)

0.05

0.02

0.01

100

200

500 1000

Zero-Gate Voltage Drain Current -

Data Sheet D10753EJ2V0DS

2SK660

PACKAGE DRAWING (Unit: mm)

4.0±0.2

2.0±0.2

0.50 TYP.

0.45 TYP.

0.42 TYP.

1.27 TYP.

Data Sheet D10753EJ2V0DS

2SK660

[MEMO]

Data Sheet D10753EJ2V0DS

2SK660

[MEMO]

Data Sheet D10753EJ2V0DS

2SK660

•

The information in this document is current as of January, 2002. The information is subject to

change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or

data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all

products and/or types are available in every country. Please check with an NEC sales representative

for availability and additional information.

•

No part of this document may be copied or reproduced in any form or by any means without prior

written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.

NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of

third parties by or arising from the use of NEC semiconductor products listed in this document or any other

liability arising from the use of such products. No license, express, implied or otherwise, is granted under any

patents, copyrights or other intellectual property rights of NEC or others.

•

Descriptions of circuits, software and other related information in this document are provided for illustrative

purposes in semiconductor product operation and application examples. The incorporation of these

circuits, software and information in the design of customer's equipment shall be done under the full

responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third

parties arising from the use of these circuits, software and information.

While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers

agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize

risks of damage to property or injury (including death) to persons arising from defects in NEC

semiconductor products, customers must incorporate sufficient safety measures in their design, such as

redundancy, fire-containment, and anti-failure features.

NEC semiconductor products are classified into the following three quality grades:

"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products

developed based on a customer-designated "quality assurance program" for a specific application. The

recommended applications of a semiconductor product depend on its quality grade, as indicated below.

Customers must check the quality grade of each semiconductor product before using it in a particular

application.

"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio

and visual equipment, home electronic appliances, machine tools, personal electronic equipment

and industrial robots

"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster

systems, anti-crime systems, safety equipment and medical equipment (not specifically designed

for life support)

"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life

support systems and medical equipment for life support, etc.

The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's

data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not

intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness

to support a given application.

(Note)

(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.

(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for

NEC (as defined above).

M8E 00. 4

相关型号：