3SK231-UAD [NEC]
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, PLASTIC, SC-61, 4 PIN;
| 型号： | 3SK231-UAD |
| 厂家： | 
NEC |
| 描述： | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, PLASTIC, SC-61, 4 PIN |
| 文件： | 总7页 (文件大小：89K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
3SK231
RF AMP. FOR UHF TV TUNER
N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR
4 PINS MINI MOLD
FEATURES
•
•
•
•
•
•
Low Noise Figure NF = 2.0 dB TYP. (@ = 900 MHz)
High Power Gain Gps = 17.5 dB TYP. (@ = 900 MHz)
Enhancement Typ.
PACKAGE DIMENSIONS
(Unit: mm)
+0.2
−0.3
2.8
+0.2
Suitable for use as RF amplifier in UHF TV tuner.
Automatically Mounting : Embossed Type Taping
Small Package : 4 Pins Mini Mold Package. (SC-61)
−0.1
1.5
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage
Gate1 to Source Voltage
Gate2 to Source Voltage
Gate1 to Drain Voltage
Gate2 to Drain Voltage
Drain Current
VDSX
VG1S
VG2S
VG1D
VG2D
ID
18
±8 (±10)*
±8 (±10)*
18
V
V
5°
5°
5°
5°
V
V
18
V
25
mA
mW
°C
Total Power Dissipation
Channel Temperature
Storage Temperature
*RL ≥ 10 kΩ
PD
200
Tch
125
Tstg
−55 to +125 °C
PIN CONNECTIONS
1. Source
2. Drain
3. Gate 2
4. Gate 1
PRECAUTION: Avoid high static voltages or electric fields so that this device would not suffer from any damage
due to those voltages or fields.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10030EJ01V0DS (1st edition)
The mark ! shows major revised points.
(Previous No. P10588EJ2V0DS00)
Date Published October 2001 CP(K)
Printed in Japan
NEC Corporation 1993
NEC Compound Semiconductor Devices 2001
3SK231
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTIC
Drain to Source Breakdown Voltage
Drain Current
SYMBOL
BVDSX
IDSx
MIN.
TYP.
MAX.
UNIT
V
TEST CONDITIONS
18
VG1S = VG2S = −2 V, ID = 10 µA
0.01
−1.0
+0.6
10.0
+1.0
+1.6
20
mA
V
VDS = 6 V, VG2S = 4.5 V, VG1S = 0.75 V
VDS = 6 V, VG2S = 3 V, ID = 10 µA
VDS = 6 V VG1S = 3 V, ID = 10 µA
VDS = VG2S = 0 V, VG1S = 8 V
VDS = VG1S = 0 V, VG2S = 8 V
VDS = 6 V, VG2S = 4.5 V, ID = 10 mA
f = 1 kHz
Gate1 to Source Cutoff Voltage
Gate2 to Source Cutoff Voltage
Gate1 Reverse Current
VG1S(off)
VG2S(off)
IG1SS
+1.1
19.5
V
nA
nA
mS
Gate2 Reverse Current
IG2SS
20
Forward Transfer Admittance
yfs
15
24
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Power Gain
Ciss
Coss
Crss
Gps
1.0
0.7
1.5
1.0
2.0
1.3
pF
pF
pF
dB
dB
VDS = 6 V, VG2S = 4.5 V, ID = 10 mA
f = 1 MHz
0.015
17.5
2.0
0.03
21.0
3.0
14.0
VDS = 6 V, VG2S = 4.5 V, ID = 10 mA
f = 900 MHz
Noise Figure
NF1
IDSX Classification
Rank
U1C/UAC *
U1C
U1D/UAD *
Marking
IDSX (mA)
U1D
0.01 to 4.0
2.0 to 10.0
* Old Specification / New Specification
2
Data Sheet PU10030EJ01V0DS
3SK231
CHARACTERISTICS CURVE (TA = 25 °C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
50
40
30
20
10
VG2S = 4.5 V
Free Air
VG1S = 3 V
2.5V
400
300
200
100
2.0V
1.5V
1.0V
0.5V
0
0
5
10
25
50
75
100
125
TA-Ambient Temperature-°C
VDS-Drain to Source Voltage-V
DRAIN CURRENT vs.
GATE1 TO SOURCE VOLTAGE
FORWARD TRANSFER ADMITTANCE vs.
GATE1 TO SOURCE VOLTAGE
VDS = 6 V
f = 1 KHz
25
20
15
10
5
25
20
15
10
5
VG2S = 3.5 V
VDS = 6 V
3.0 V
VG2S = 5 V
2.5 V
2.0 V
4 V
3 V
2 V
1.5 V
3
0
0
-1
0
1
2
4
-1
0
1
2
3
4
VG1S-Gate1 to Source Voltage-V
VG1S-Gate1 to Source Voltage-V
INPUT CAPACITANCE vs.
GATE2 TO SOURCE VOLTAGE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
2.5
2.0
1.5
1.0
0.5
ID = 10 mA
VDS = 6 V
f = 1 KHz
40
32
24
16
8
(at VDS = 6 V
VG2S = 4.5 V)
f = 1 MHz
5 V
VG2S = 6 V
5 V
4 V
3 V
2 V
0
0
1.0
2.0
3.0
4.0
5.0
4
8
12
16
20
ID-Drain Current-mA
VG2S-Gate2 to Source Voltage-V
3
Data Sheet PU10030EJ01V0DS
3SK231
OUTPUT CAPACITANCE vs.
GATE2 TO SOURCE VOLTAGE
POWER GAIN AND NOISE FIGURE vs.
GATE2 TO SOURCE VOLTAGE
2.5
2.0
1.5
1.0
0.5
0
10
I
D
= 10 mA
(at VDS = 6 V
G2S = 4.5 V)
f = 1 MHz
f = 900 MHz
G
ps
20
10
I
D
= 10 mA
(at VDS = 6 V
G2S = 4.5 V)
V
V
0
−10
−20
5
0
NF
1.0
2.0
3.0
4.0
5.0
0
1.0
2.0
3.0
4.0
5.0
V
G2S-Gate2 to Source Voltage-V
VG2S-Gate2 to Source Voltage-V
4
Data Sheet PU10030EJ01V0DS
3SK231
Gps AND NF TEST CIRCUIT AT f = 900 MHz
V
G2S (3 V)
1000 pF
47 kΩ
1000 pF
to 10 pF
to 10 pF
to 10 pF
INPUT
50 Ω
OUTPUT
50 Ω
to 10 pF
L2
L1
47 kΩ
RFC
1000 pF
1000 pF
L1, L2; 35 × 5 × 0.2 mm
V
G1S
VDD (6 V)
5
Data Sheet PU10030EJ01V0DS
3SK231
•
The information in this document is current as of October, 2001. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
•
•
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
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third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
•
•
•
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
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(Note)
(1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.
and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4-0110
6
Data Sheet PU10030EJ01V0DS
3SK231
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0110
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