3SK231 [NEC]
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, PLASTIC, SC-61, 4 PIN;
| 型号： | 3SK231 |
| 厂家： | 
NEC |
| 描述： | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, PLASTIC, SC-61, 4 PIN |
| 文件： | 总8页 (文件大小：51K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
3SK231
RF AMP. FOR UHF TV TUNER
N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR
4 PINS MINI MOLD
FEATURES
PACKAGE DIMENSIONS
•
•
•
•
•
•
Low Noise Figure NF = 2.0 dB TYP. (@ = 900 MHz)
High Power Gain Gps = 17.5 dB TYP. (@ = 900 MHz)
Enhancement Typ.
(Unit: mm)
+0.2
−0.3
2.8
+0.2
−0.1
1.5
Suitable for use as RF amplifier in UHF TV tuner.
Automatically Mounting : Embossed Type Taping
Small Package : 4 Pins Mini Mold Package. (SC-61)
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Drain to Source Voltage
Gate1 to Source Voltage
Gate2 to Source Voltage
Gate1 to Drain Voltage
Gate2 to Drain Voltage
Drain Current
VDSX
VG1S
VG2S
VG1D
VG2D
ID
18
8 ( 10)*
8 ( 10)*
18
V
V
5°
5°
5°
5°
V
V
18
V
25
mA
mW
C
Total Power Dissipation
Channel Temperature
Storage Temperature
*RL 10 k
PD
200
Tch
125
Tstg
55 to +125
C
PIN CONNECTIONS
1. Source
2. Drain
3. Gate 2
4. Gate 1
PRECAUTION: Avoid high static voltages or electric fields so that this device would not suffer from any damage
due to those voltages or fields.
Document No. P10588EJ2V0DS00 (2nd edition)
(Previous No. TC-2283)
Date Published March 1997 N
Printed in Japan
©
1993
3SK231
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTIC
Drain to Source Breakdown Voltage
Drain Current
SYMBOL
BVDSX
IDSx
MIN.
TYP.
MAX.
UNIT
V
TEST CONDITIONS
18
VG1S = VG2S = 2 V, ID = 10
A
0.01
1.0
10.0
+1.0
+1.6
20
mA
V
VDS = 6 V, VG2S = 4.5 V, VG1S = 0.75 V
Gate1 to Source Cutoff Voltage
Gate2 to Source Cutoff Voltage
Gate1 Reverse Current
VG1S(off)
VG2S(off)
IG1SS
VDS = 6 V, VG2S = 3 V, ID = 10
VDS = 6 V VG1S = 3 V, ID = 10
VDS = VG2S = 0 V, VG1S = 8 V
VDS = VG1S = 0 V, VG2S = 8 V
A
A
+0.6
+1.1
19.5
V
nA
nA
mS
Gate2 Reverse Current
IG2SS
20
Forward Transfer Admittance
yfs
15
24
VDS = 6 V, VG2S = 4.5 V, ID = 10 mA
f = 1 kHz
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Power Gain
Ciss
Coss
Crss
Gps
1.0
0.7
1.5
1.0
2.0
1.3
pF
pF
pF
dB
dB
VDS = 6 V, VG2S = 4.5 V, ID = 10 mA
f = 1 MHz
0.015
17.5
2.0
0.03
21.0
3.0
14.0
VDS = 6 V, VG2S = 4.5 V, ID = 10 mA
f = 900 MHz
Noise Figure
NF1
IDSX Classification
Rank
U1C
U1C
U1D
Marking
IDSX (mA)
U1D
0.01 to 4.0
2.0 to 10.0
2
3SK231
CHARACTERISTICS CURVE (TA = 25 C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
50 VG2S
= 4.5 V
Free Air
VG1S = 3 V
400
40
30
20
10
2.5V
300
200
100
2.0V
1.5V
1.0V
0.5V
0
0
5
10
25
T
50
75
100
125
A
-Ambient Temperature-°C
VDS-Drain to Source Voltage-V
DRAIN CURRENT vs.
GATE1 TO SOURCE VOLTAGE
FORWARD TRANSFER ADMITTANCE vs.
GATE1 TO SOURCE VOLTAGE
V
DS = 6 V
25
20
15
10
5
V
G2S = 3.5 V
25
20
15
10
5
V
DS = 6 V
f = 1 KHz
3.0 V
VG2S = 5 V
2.5 V
2.0 V
4 V
3 V
2 V
1.5 V
3
0
0
-1
0
1
2
4
-1
0
1
2
3
4
V
G1S-Gate1 to Source Voltage-V
VG1S-Gate1 to Source Voltage-V
INPUT CAPACITANCE vs.
GATE2 TO SOURCE VOLTAGE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
2.5
2.0
1.5
1.0
0.5
I
D
= 10 mA
(at VDS = 6 V
G2S = 4.5 V)
f = 1 MHz
V
DS = 6 V
40
32
24
16
8
f = 1 KHz
V
5 V
V
G2S = 6 V
5 V
4 V
3 V
2 V
0
0
1.0
2.0
3.0
4.0
5.0
4
8
12
16
20
I
D-Drain Current-mA
VG2S-Gate2 to Source Voltage-V
3
3SK231
OUTPUT CAPACITANCE vs.
GATE2 TO SOURCE VOLTAGE
POWER GAIN AND NOISE FIGURE vs.
GATE2 TO SOURCE VOLTAGE
2.5
2.0
1.5
1.0
0.5
0
10
I
D
= 10 mA
(at VDS = 6 V
G2S = 4.5 V)
f = 1 MHz
f = 900 MHz
G
ps
20
10
I
D
= 10 mA
(at VDS = 6 V
G2S = 4.5 V)
V
V
0
−10
−20
5
0
NF
1.0
2.0
3.0
4.0
5.0
0
1.0
2.0
3.0
4.0
5.0
V
G2S-Gate2 to Source Voltage-V
VG2S-Gate2 to Source Voltage-V
4
3SK231
Gps AND NF TEST CIRCUIT AT f = 900 MHz
VG2S (3 V)
1000 pF
47 kΩ
1000 pF
to 10 pF
to 10 pF
to 10 pF
INPUT
50 Ω
OUTPUT
50 Ω
to 10 pF
L2
L1
47 kΩ
RFC
1000 pF
1000 pF
L1, L2; 35 × 5 × 0.2 mm
VG1S
VDD (6 V)
5
3SK231
[MEMO]
6
3SK231
[MEMO]
7
3SK231
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96. 5
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