AP1L2Q [NEC]
on-chip resistor NPN silicon epitaxial transistor; 片上电阻NPN硅外延晶体管型号: | AP1L2Q |
厂家: | NEC |
描述: | on-chip resistor NPN silicon epitaxial transistor |
文件: | 总6页 (文件大小:86K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
COMPOUND TRANSISTOR
AP1 SERIES
on-chip resistor NPN silicon epitaxial transistor
For mid-speed switching
PACKAGE DRAWING (UNIT: mm)
FEATURES
•
•
•
Current drive available up to 0.7 A
On-chip bias resistor
Low power consumption during drive
AP1 SERIES LISTS
R1 (KΩ)
−
R2 (KΩ)
10
Products
AP1A4A
AP1L2Q
AP1A3M
AP1F3P
AP1J3P
AP1L3N
AP1A4M
0.47
1.0
4.7
1.0
10
Electrode Connection
1. Emitter
2. Collector JEDEC: TO-92
3. Base IEC : PA33
EIAJ : SC-43B
2.2
3.3
10
4.7
10
10
10
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (Pulse)
Base current (DC)
Symbol
VCBO
VCEO
VEBO
IC(DC)
IC(pulse) *
IB(DC)
PT
Ratings
−25
Unit
V
−25
V
−10
V
−0.7
A
−1.0
A
−0.02
750
A
Total power dissipation
Junction temperature
mW
°C
°C
Tj
150
−55 to +150
Storage temperature
Tstg
* PW ≤ 10 ms, duty cycle ≤ 50 %
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16171EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
2002
©
AP1 SERIES
AP1A4A
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Collector cutoff current
DC current gain
Symbol
ICBO
Conditions
VCB = −22 V, IE = 0
MIN.
TYP.
MAX.
100
Unit
nA
−
VCE = −2.0 V, IC = −0.1 A
VCE = −2.0 V, IC = −0.5 A
VCE = −2.0 V, IC = −0.7 A
IC = −0.3 A, IC = −6 A
hFE1 **
hFE2 **
hFE3 **
VCE(sat) **
VIL **
R1
200
100
50
−
DC current gain
−
DC current gain
−0.28
−0.4
−0.3
−
Collector saturation voltage
Low level input voltage
Input resistance
V
VCE = −5.0 V, IC = −100 µA
V
−
−
Ω
kΩ
E-to-B resistance
R2
7
10
13
** PW ≤ 350 µs, duty cycle ≤ 2 %
AP1L2Q
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Collector cutoff current
DC current gain
Symbol
ICBO
Conditions
VCB = −22 V, IE = 0
MIN.
TYP.
MAX.
Unit
nA
−
−100
VCE = −2.0 V, IC = −0.1 A
VCE = −2.0 V, IC = −0.5 A
VCE = −2.0 V, IC = −0.7 A
VIN = −5.0 V, IC = −0.3 A
VCE = −5.0 V, IC = −100 µA
hFE1 **
hFE2 **
hFE3 **
VOL **
VIL **
R1
150
100
50
350
300
−
DC current gain
−
DC current gain
200
−0.3
−0.65
470
−0.4
−0.3
611
Low level output voltage
Low level input voltage
Input resistance
V
V
Ω
329
kΩ
E-to-B resistance
R2
3.39
4.7
6.11
** PW ≤ 350 µs, duty cycle ≤ 2 %
AP1A3M
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Collector cutoff current
DC current gain
Symbol
ICBO
Conditions
VCB = −22 V, IE = 0
MIN.
TYP.
MAX.
100
Unit
nA
−
VCE = −2.0 V, IC = −0.1 A
VCE = −2.0 V, IC = −0.5 A
VCE = −2.0 V, IC = −0.7 A
VIN = −5.0 V, IC = −0.2 A
VCE = −5.0 V, IC = −100 µA
hFE1 **
hFE2 **
hFE3 **
VOL **
VIL **
R1
80
100
50
−
DC current gain
−
DC current gain
−0.3
−0.4
−0.3
1.3
Low level output voltage
Low level input voltage
Input resistance
V
V
kΩ
kΩ
0.7
0.7
1.0
1.0
E-to-B resistance
R2
1.3
** PW ≤ 350 µs, duty cycle ≤ 2 %
2
Data Sheet D16171EJ1V0DS
AP1 SERIES
AP1F3P
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Collector cutoff current
DC current gain
Symbol
ICBO
Conditions
VCB = −22 V, IE = 0
MIN.
TYP.
MAX.
Unit
nA
−
−100
VCE = −2.0 V, IC = −0.1 A
VCE = −2.0 V, IC = −0.5 A
VCE = −2.0 V, IC = −0.7 A
VIN = −5.0 V, IC = −0.2 A
VCE = −5.0 V, IC = −100 µA
hFE1 **
hFE2 **
hFE3 **
VOL **
VIL **
R1
200
100
50
470
300
200
−0.2
−0.65
3.3
−
DC current gain
−
DC current gain
−0.4
−0.3
4.3
Low level output voltage
Low level input voltage
Input resistance
V
V
kΩ
kΩ
2.3
7
E-to-B resistance
R2
10
13
** PW ≤ 350 µs, duty cycle ≤ 2 %
AP1J3P
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Collector cutoff current
DC current gain
Symbol
ICBO
Conditions
VCB = −22 V, IE = 0
MIN.
TYP.
MAX.
100
Unit
nA
−
VCE = −2.0 V, IC = −0.1 A
VCE = −2.0 V, IC = −0.5 A
VCE = −2.0 V, IC = −0.7 A
VIN = −5.0 V, IC = −0.15 A
VCE = −5.0 V, IC = −100 µA
hFE1 **
hFE2 **
hFE3 **
VOL **
VIL **
R1
300
300
135
600
700
600
0.14
−
DC current gain
−
DC current gain
Low level output voltage
Low level input voltage
Input resistance
0.3
0.3
4.29
13
V
V
kΩ
kΩ
2.31
7
3.3
10
E-to-B resistance
R2
** PW ≤ 350 µs, duty cycle ≤ 2 %
AP1L3N
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Collector cutoff current
DC current gain
Symbol
ICBO
Conditions
VCB = −22 V, IE = 0
MIN.
TYP.
MAX.
Unit
nA
−
−100
VCE = −2.0 V, IC = −0.1 A
VCE = −2.0 V, IC = −0.5 A
VCE = −2.0 V, IC = −0.7 A
VIN = −5.0 V, IC = −0.15 A
VCE = −5.0 V, IC = −100 µA
hFE1 **
hFE2 **
hFE3 **
VOL **
VIL **
R1
200
100
50
−
DC current gain
−
DC current gain
−0.45
−0.3
6.11
13
Low level output voltage
Low level input voltage
Input resistance
V
V
kΩ
kΩ
3.29
7
4.7
10
E-to-B resistance
R2
** PW ≤ 350 µs, duty cycle ≤ 2 %
3
Data Sheet D16171EJ1V0DS
AP1 SERIES
AP1A4M
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Collector cutoff current
DC current gain
Symbol
ICBO
Conditions
VCB = −22 V, IE = 0
MIN.
TYP.
MAX.
Unit
nA
−
−100
VCE = −2.0 V, IC = −0.1 A
VCE = −2.0 V, IC = −0.5 A
VCE = −2.0 V, IC = −0.7 A
VIN = −5.0 V, IC = −0.1 A
VCE = −5.0 V, IC = −100 µA
hFE1 **
hFE2 **
hFE3 **
VOL **
VIL **
R1
200
100
50
−
DC current gain
−
DC current gain
−0.4
−0.3
13
Low level output voltage
Low level input voltage
Input resistance
V
V
kΩ
kΩ
7
7
10
10
E-to-B resistance
R2
13
** PW ≤ 350 µs, duty cycle ≤ 2 %
4
Data Sheet D16171EJ1V0DS
AP1 SERIES
TYPICAL CHARACTERISTICS (Ta = 25°C)
5
Data Sheet D16171EJ1V0DS
AP1 SERIES
•
The information in this document is current as of July, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
•
•
No part of this document may be copied or reproduced in any form or by any means without prior
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patents, copyrights or other intellectual property rights of NEC or others.
•
•
•
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M8E 00. 4
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