AP1L3N [NEC]

on-chip resistor NPN silicon epitaxial transistor; 片上电阻NPN硅外延晶体管


型号：	AP1L3N
厂家：	NEC
描述：	on-chip resistor NPN silicon epitaxial transistor 片上电阻NPN硅外延晶体管晶体小信号双极晶体管开关
文件：	总6页 (文件大小：86K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DATA SHEET

COMPOUND TRANSISTOR

AP1 SERIES

on-chip resistor NPN silicon epitaxial transistor

For mid-speed switching

PACKAGE DRAWING (UNIT: mm)

FEATURES

•

Current drive available up to 0.7 A

On-chip bias resistor

Low power consumption during drive

AP1 SERIES LISTS

R¹(KΩ)

−

R²(KΩ)

Products

AP1A4A

AP1L2Q

AP1A3M

AP1F3P

AP1J3P

AP1L3N

AP1A4M

0.47

1.0

4.7

1.0

Electrode Connection

1. Emitter

2. Collector JEDEC: TO-92

3. Base IEC : PA33

EIAJ : SC-43B

2.2

3.3

4.7

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current (DC)

Collector current (Pulse)

Base current (DC)

Symbol

V^CBO

V^CEO

V^EBO

I^C(DC)

I^C(pulse)*

I^B(DC)

P^T

Ratings

−25

Unit

−25

−10

−0.7

−1.0

−0.02

750

Total power dissipation

Junction temperature

°C

T^j

150

−55 to +150

Storage temperature

T^stg

* PW ≤ 10 ms, duty cycle ≤ 50 %

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D16171EJ1V0DS00 (1st edition)

Date Published April 2002 N CP(K)

Printed in Japan

2002

1998

AP1 SERIES

AP1A4A

ELECTRICAL CHARACTERISTICS (Ta = 25°C)

Parameter

Collector cutoff current

DC current gain

Symbol

I^CBO

Conditions

V^CB= −22 V, I^E= 0

MIN.

TYP.

MAX.

100

Unit

−

V^CE= −2.0 V, I^C= −0.1 A

V^CE= −2.0 V, I^C= −0.5 A

V^CE= −2.0 V, I^C= −0.7 A

I^C= −0.3 A, I^C= −6 A

h^FE1**

h^FE2**

h^FE3**

V^CE(sat)**

V^IL**

R¹

200

100

−

DC current gain

−

DC current gain

−0.28

−0.4

−0.3

−

Collector saturation voltage

Low level input voltage

Input resistance

V^CE= −5.0 V, I^C= −100 µA

−

Ω

kΩ

E-to-B resistance

R²

** PW ≤ 350 µs, duty cycle ≤ 2 %

AP1L2Q

ELECTRICAL CHARACTERISTICS (Ta = 25°C)

Parameter

Collector cutoff current

DC current gain

Symbol

I^CBO

Conditions

V^CB= −22 V, I^E= 0

MIN.

TYP.

MAX.

Unit

−

−100

V^CE= −2.0 V, I^C= −0.1 A

V^CE= −2.0 V, I^C= −0.5 A

V^CE= −2.0 V, I^C= −0.7 A

V^IN= −5.0 V, I^C= −0.3 A

V^CE= −5.0 V, I^C= −100 µA

h^FE1**

h^FE2**

h^FE3**

V^OL**

V^IL**

R¹

150

100

350

300

−

DC current gain

−

DC current gain

200

−0.3

−0.65

470

−0.4

−0.3

611

Low level output voltage

Low level input voltage

Input resistance

Ω

329

kΩ

E-to-B resistance

R²

3.39

4.7

6.11

** PW ≤ 350 µs, duty cycle ≤ 2 %

AP1A3M

ELECTRICAL CHARACTERISTICS (Ta = 25°C)

Parameter

Collector cutoff current

DC current gain

Symbol

I^CBO

Conditions

V^CB= −22 V, I^E= 0

MIN.

TYP.

MAX.

100

Unit

−

V^CE= −2.0 V, I^C= −0.1 A

V^CE= −2.0 V, I^C= −0.5 A

V^CE= −2.0 V, I^C= −0.7 A

V^IN= −5.0 V, I^C= −0.2 A

V^CE= −5.0 V, I^C= −100 µA

h^FE1**

h^FE2**

h^FE3**

V^OL**

V^IL**

R¹

100

−

DC current gain

−

DC current gain

−0.3

−0.4

−0.3

1.3

Low level output voltage

Low level input voltage

Input resistance

kΩ

0.7

1.0

E-to-B resistance

R²

1.3

** PW ≤ 350 µs, duty cycle ≤ 2 %

Data Sheet D16171EJ1V0DS

AP1 SERIES

AP1F3P

ELECTRICAL CHARACTERISTICS (Ta = 25°C)

Parameter

Collector cutoff current

DC current gain

Symbol

I^CBO

Conditions

V^CB= −22 V, I^E= 0

MIN.

TYP.

MAX.

Unit

−

−100

V^CE= −2.0 V, I^C= −0.1 A

V^CE= −2.0 V, I^C= −0.5 A

V^CE= −2.0 V, I^C= −0.7 A

V^IN= −5.0 V, I^C= −0.2 A

V^CE= −5.0 V, I^C= −100 µA

h^FE1**

h^FE2**

h^FE3**

V^OL**

V^IL**

R¹

200

100

470

300

200

−0.2

−0.65

3.3

−

DC current gain

−

DC current gain

−0.4

−0.3

4.3

Low level output voltage

Low level input voltage

Input resistance

kΩ

2.3

E-to-B resistance

R²

** PW ≤ 350 µs, duty cycle ≤ 2 %

AP1J3P

ELECTRICAL CHARACTERISTICS (Ta = 25°C)

Parameter

Collector cutoff current

DC current gain

Symbol

I^CBO

Conditions

V^CB= −22 V, I^E= 0

MIN.

TYP.

MAX.

100

Unit

−

V^CE= −2.0 V, I^C= −0.1 A

V^CE= −2.0 V, I^C= −0.5 A

V^CE= −2.0 V, I^C= −0.7 A

V^IN= −5.0 V, I^C= −0.15 A

V^CE= −5.0 V, I^C= −100 µA

h^FE1**

h^FE2**

h^FE3**

V^OL**

V^IL**

R¹

300

135

600

700

600

0.14

−

DC current gain

−

DC current gain

Low level output voltage

Low level input voltage

Input resistance

0.3

4.29

kΩ

2.31

3.3

E-to-B resistance

R²

** PW ≤ 350 µs, duty cycle ≤ 2 %

AP1L3N

ELECTRICAL CHARACTERISTICS (Ta = 25°C)

Parameter

Collector cutoff current

DC current gain

Symbol

I^CBO

Conditions

V^CB= −22 V, I^E= 0

MIN.

TYP.

MAX.

Unit

−

−100

V^CE= −2.0 V, I^C= −0.1 A

V^CE= −2.0 V, I^C= −0.5 A

V^CE= −2.0 V, I^C= −0.7 A

V^IN= −5.0 V, I^C= −0.15 A

V^CE= −5.0 V, I^C= −100 µA

h^FE1**

h^FE2**

h^FE3**

V^OL**

V^IL**

R¹

200

100

−

DC current gain

−

DC current gain

−0.45

−0.3

6.11

Low level output voltage

Low level input voltage

Input resistance

kΩ

3.29

4.7

E-to-B resistance

R²

** PW ≤ 350 µs, duty cycle ≤ 2 %

Data Sheet D16171EJ1V0DS

AP1 SERIES

AP1A4M

ELECTRICAL CHARACTERISTICS (Ta = 25°C)

Parameter

Collector cutoff current

DC current gain

Symbol

I^CBO

Conditions

V^CB= −22 V, I^E= 0

MIN.

TYP.

MAX.

Unit

−

−100

V^CE= −2.0 V, I^C= −0.1 A

V^CE= −2.0 V, I^C= −0.5 A

V^CE= −2.0 V, I^C= −0.7 A

V^IN= −5.0 V, I^C= −0.1 A

V^CE= −5.0 V, I^C= −100 µA

h^FE1**

h^FE2**

h^FE3**

V^OL**

V^IL**

R¹

200

100

−

DC current gain

−

DC current gain

−0.4

−0.3

Low level output voltage

Low level input voltage

Input resistance

kΩ

E-to-B resistance

R²

** PW ≤ 350 µs, duty cycle ≤ 2 %

Data Sheet D16171EJ1V0DS

AP1 SERIES

TYPICAL CHARACTERISTICS (T^a= 25°C)

Data Sheet D16171EJ1V0DS

AP1 SERIES

•

The information in this document is current as of July, 2001. The information is subject to change

without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data

books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products

and/or types are available in every country. Please check with an NEC sales representative for

availability and additional information.

•

No part of this document may be copied or reproduced in any form or by any means without prior

written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.

NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of

third parties by or arising from the use of NEC semiconductor products listed in this document or any other

liability arising from the use of such products. No license, express, implied or otherwise, is granted under any

patents, copyrights or other intellectual property rights of NEC or others.

•

Descriptions of circuits, software and other related information in this document are provided for illustrative

purposes in semiconductor product operation and application examples. The incorporation of these

circuits, software and information in the design of customer's equipment shall be done under the full

responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third

parties arising from the use of these circuits, software and information.

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agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize

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semiconductor products, customers must incorporate sufficient safety measures in their design, such as

redundancy, fire-containment, and anti-failure features.

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"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products

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Customers must check the quality grade of each semiconductor product before using it in a particular

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"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life

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The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's

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M8E 00. 4

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