NE5500179A [NEC]
SILICON POWER MOS FET; 硅功率MOS FET
| 型号： | NE5500179A |
| 厂家： | 
NEC |
| 描述： | SILICON POWER MOS FET |
| 文件： | 总11页 (文件大小：68K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
SILICON POWER MOS FET
NE5500179A
4.8 V OPERATION SILICON RF POWER LD-MOS FET
FOR 1.9 GHz 1 W TRANSMISSION AMPLIFIERS
DESCRIPTION
The NE5500179A is an N-channel silicon power MOS FET specially designed as the transmission driver amplifier
for 4.8 V GSM 1 800 and GSM 1 900 handsets. Dies are manufactured using NEC’s NEWMOS technology (NEC’s
0.6 µm WSi gate lateral-diffusion MOS FET) and housed in a surface mount package. The device can deliver 30.0
dBm output power with 55% power added efficiency at 1.9 GHz under the 4.8 V supply voltage, or can deliver 27
dBm output power with 50% pozwer added efficiency at 3.5 V, respectively.
FEATURES
•
•
•
•
•
High output power
: Pout = 30.0 dBm TYP. (VDS = 4.8 V, IDset = 200 mA, f = 1.9 GHz, Pin = 20 dBm)
High power added efficiency : ηadd = 55% TYP. (VDS = 4.8 V, IDset = 200 mA, f = 1.9 GHz, Pin = 20 dBm)
High linear gain
: GL = 14.0 dB TYP. (VDS = 4.8 V, IDset = 200 mA, f = 1.9 GHz, Pin = 10 dBm)
: 5.7 × 5.7 × 1.1 mm MAX.
Surface mount package
Single supply
: VDS = 3.0 to 6.0 V
APPLICATIONS
•
Digital cellular phones : 4.8 V driver amplifier for GSM 1 800/ GSM 1 900 class 1 handsets, or 4.8 V final stage
amplifier
•
•
Digital cordless phones : 3.5 V final stage amplifier for DECT
Others
: General purpose amplifiers for 1.6 to 2.5 GHz TDMA applications
ORDERING INFORMATION
Part Number
Package
79A
Marking
R1
Supplying Form
• 12 mm wide embossed taping
NE5500179A-T1
• Gate pin face the perforation side of the tape
• Qty 1 kpcs/reel
Remark To order evaluation samples, consult your NEC sales representative.
Part number for sample order: NE5500179A
Caution Please handle this device at static-free workstation, because this is an electrostatic
sensitive device.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10118EJ01V1DS (1st edition)
(Previous No. P15190EJ1V0DS00)
Date Published April 2002 CP(K)
The mark ! shows major revised points.
NEC Corporation 1999
NEC Compound Semiconductor Devices 2002
Printed in Japan
NE5500179A
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Symbol
VDS
Ratings
8.5
Unit
V
VGSO
ID
5.0
V
0.25
A
Note
Drain Current (Pulse Test)
Total Power Dissipation
Channel Temperature
Storage Temperature
ID
0.5
A
!
!
Ptot
Tch
Tstg
10
W
°C
°C
125
−65 to +125
Note Duty Cycle ≤ 50%, Ton ≤ 1 s
RECOMMENDED OPERATING CONDITIONS
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (Pulse Test)
Input Power
Symbol
VDS
Test Conditions
MIN.
3.0
0
TYP.
4.8
MAX.
6.0
3.5
−
Unit
V
VGSO
ID
2.0
V
!
Duty Cycle ≤ 50%, Ton ≤ 1 s
−
340
20
mA
dBm
Pin
f = 1.9 GHz, VDS = 4.8 V
0
22
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter
Symbol
IGSO
Test Conditions
VGSS = 5.0 V
MIN.
TYP.
MAX.
100
Unit
nA
Gate to Source Leak Current
−
−
−
−
Saturated Drain Current
(Zero Gate Voltage Drain Current)
IDSS
VDSS = 8.5 V
100
nA
Gate Threshold Voltage
Transconductance
Vth
gm
VDS = 4.8 V, IDS = 1 mA
VDS = 4.8 V, IDS = 250 mA
IDSS = 10 µA
1.0
−
1.45
420
24
2.0
−
V
mS
V
Drain to Source Breakdown Voltage
Thermal Resistance
Linear Gain
BVDS
Rth
20
−
−
Channel to Case
10
−
°C/W
dB
GL
f = 1.9 GHz, Pin = 10 dBm,
−
14.0
−
VDS = 4.8 V, IDset = 200 mA, Note 1, 2
Output Power
Pout
Iop
f = 1.9 GHz, Pin = 20 dBm,
28.5
−
30.0
340
55
−
−
−
dBm
mA
%
Operating Current
Power Added Efficiency
VDS = 4.8 V, IDset = 200 mA, Note 1, 2
ηadd
48
Notes 1. Peak measurement at Duty Cycle ≤ 50%, Ton ≤ 1 s.
!
2. DC performance is 100% testing. RF performance is testing several samples per wafer.
Wafer rejection criteria for standard devices is 1 reject for several samples.
2
Data Sheet PU10118EJ01V1DS
NE5500179A
TYPICAL CHARACTERISTICS (TA = +25°C)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
SET DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
3.5
1 000
100
10
V
GS = 10 V MAX.
V
DS = 4.8 V
Step = 1.0 V
3.0
2.5
2.0
1.5
1.0
0.5
1
0.1
0
2
4
6
8
10 12
14 16
1.0
1.5
2.0
2.5
3.0
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
OUTPUT POWER, DRAIN CURRENT
vs. INPUT POWER
DRAIN EFFICIENCY, POWER ADDED
EFFICIENCY vs. INPUT POWER
35
30
25
20
15
10
100
500
400
300
V
DS = 4.8 V
V
DS = 4.8 V
I
Dset = 100 mA
IDset = 100 mA
f = 1.9 GHz
f = 1.9 GHz
η
P
out
η
d
η
50
η
add
200
100
0
I
D
0
5
10
15
20
25
30
0
5
10
15
20
25
30
Input Power Pin (dBm)
Input Power Pin (dBm)
OUTPUT POWER, DRAIN CURRENT
vs. GATE TO SOURCE VOLTAGE
DRAIN EFFICIENCY, POWER ADDED
EFFICIENCY vs. GATE TO SOURCE VOLTAGE
31
30
29
28
27
26
100
500
400
300
V
DS = 4.8 V
f = 1.9 GHz
in = 20 dBm
V
DS = 4.8 V
f = 1.9 GHz
Pin = 20 dBm
P
P
out
D
η
η
d
I
η
50
η
add
200
100
0
0.0
1.0
2.0
3.0
4.0
0
1.0
2.0
3.0
4.0
Gate to Source Voltage VGS (V)
Gate to Source Voltage VGS (V)
3
Data Sheet PU10118EJ01V1DS
NE5500179A
OUTPUT POWER, DRAIN CURRENT
vs. INPUT POWER
DRAIN EFFICIENCY, POWER ADDED
EFFICIENCY vs. INPUT POWER
30
25
20
15
10
5
100
500
400
300
V
DS = 3.5 V
V
DS = 3.5 V
I
Dset = 100 mA
I
Dset = 100 mA
P
out
f = 1.9 GHz
f = 1.9 GHz
η
η
d
η
η
η
50
η
add
200
100
0
I
D
0
5
10
15
20
25
30
0
5
10
15
20
25
30
Input Power Pin (dBm)
Input Power Pin (dBm)
OUTPUT POWER, DRAIN CURRENT
vs. GATE TO SOURCE VOLTAGE
DRAIN EFFICIENCY, POWER ADDED
EFFICIENCY vs. GATE TO SOURCE VOLTAGE
28
27
26
25
24
23
100
500
400
300
V
DS = 3.5 V
f = 1.9 GHz
in = 18 dBm
V
DS = 3.5 V
f = 1.9 GHz
Pin = 18 dBm
P
P
out
η
η
d
50
η
add
200
100
0
I
D
0.0
1.0
2.0
3.0
4.0
0
1.0
2.0
3.0
4.0
Gate to Source Voltage VGS (V)
Gate to Source Voltage VGS (V)
OUTPUT POWER, DRAIN CURRENT
vs. INPUT POWER
DRAIN EFFICIENCY, POWER ADDED
EFFICIENCY vs. INPUT POWER
30
25
20
15
10
5
100
50
0
500
400
300
V
DS = 4.5 V
V
DS = 4.5 V
I
Dset = 100 mA
I
Dset = 100 mA
P
out
f = 460 MHz
f = 460 MHz
η
η
d
η
add
200
100
0
I
D
–5
0
5
10
15
20
25
–5
0
5
10
15
20
25
Input Power Pin (dBm)
Input Power Pin (dBm)
4
Data Sheet PU10118EJ01V1DS
NE5500179A
OUTPUT POWER, DRAIN CURRENT
vs. GATE TO SOURCE VOLTAGE
DRAIN EFFICIENCY, POWER ADDED
EFFICIENCY vs. GATE TO SOURCE VOLTAGE
30
25
20
15
10
5
100
600
500
400
300
200
100
0
V
DS = 4.5 V
f = 460 GHz
in = 15 dBm
P
out
P
η
η
η
η
d
η
add
η
η
η
50
V
DS = 4.5 V
I
D
f = 460 MHz
P
in = 15 dBm
0
1.0
2.0
3.0
4.0
0
1.0
2.0
3.0
4.0
Gate to Source Voltage VGS (V)
Gate to Source Voltage VGS (V)
OUTPUT POWER, DRAIN CURRENT
vs. INPUT POWER
DRAIN EFFICIENCY, POWER ADDED
EFFICIENCY vs. INPUT POWER
30
25
20
15
10
5
100
50
0
500
400
300
V
DS = 3.5 V
V
I
DS = 3.5 V
Dset = 100 mA
f = 850 MHz
IDset = 100 mA
f = 850 MHz
P
out
η
d
η
add
200
100
0
I
D
–5
0
5
10
15
20
25
–5
0
5
10
15
20
25
Input Power Pin (dBm)
Input Power Pin (dBm)
OUTPUT POWER, DRAIN CURRENT
vs. INPUT POWER
DRAIN EFFICIENCY, POWER ADDED
EFFICIENCY vs. INPUT POWER
30
25
20
15
10
5
100
500
400
300
V
DS = 3.0 V
V
DS = 3.0 V
I
Dset = 100 mA
f = 2.45 GHz
I
Dset = 100 mA
f = 2.45 GHz
Pout
η
d
50
I
D
200
100
0
η
add
0
5
10
15
20
25
30
0
5
10
15
20
25
30
Input Power Pin (dBm)
Input Power Pin (dBm)
5
Data Sheet PU10118EJ01V1DS
NE5500179A
OUTPUT POWER, DRAIN CURRENT
vs. GATE TO SOURCE VOLTAGE
DRAIN EFFICIENCY, POWER ADDED
EFFICIENCY vs. GATE TO SOURCE VOLTAGE
30
25
20
15
10
5
100
500
400
300
V
DS = 3.0 V
f = 2.45 GHz
in = 18 dBm
V
DS = 3.0 V
f = 2.45 GHz
Pin = 18 dBm
P
out
P
η
η
I
D
50
η
d
200
100
0
η
add
0.0
1.0
2.0
3.0
4.0
0
1.0
2.0
3.0
4.0
Gate to Source Voltage VGS (V)
Gate to Source Voltage VGS (V)
Remark The graphs indicate nominal characteristics.
6
Data Sheet PU10118EJ01V1DS
NE5500179A
S-PARAMETERS
Test Conditions: VDS = 4.8 V, IDset = 100 mA
MAG Note MSG Note
K
Frequency
GHz
S11
S21
S12
S22
MAG.
ANG.
dB
MAG.
ANG.
dB
MAG.
ANG.
MAG.
ANG.
dB
dB
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.844
0.792
0.757
0.747
0.746
0.751
0.756
0.772
0.777
0.785
−69.6
−107.8
−127.4
−138.7
−146.2
−151.8
−155.6
−159.5
−162.3
−165.0
25.2
21.7
18.7
16.4
14.5
12.7
11.3
9.9
18.11
12.12
8.58
6.58
5.28
4.32
3.68
3.12
2.75
2.40
135.5
112.3
98.8
89.4
82.1
76.2
70.9
65.9
61.3
58.2
−28.5
−26.1
−25.5
−25.7
−25.7
−26.0
−26.3
−26.4
−26.9
−27.2
0.037
0.049
0.052
0.052
0.052
0.050
0.048
0.048
0.045
0.043
48.2
23.2
0.517
0.569
0.598
0.618
0.641
0.660
0.681
0.696
0.715
0.732
−85.0
−120.7
−136.5
−144.8
−149.5
−153.4
−156.2
−158.9
−161.0
−162.9
26.8
23.9
22.1
21.0
20.1
19.3
18.8
18.1
17.9
17.4
0.00
0.06
0.08
0.11
0.13
0.18
0.22
0.23
0.28
0.33
10.8
3.3
−4.1
−8.9
−12.6
−17.0
−22.1
−21.9
8.8
7.6
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
0.796
0.804
0.814
0.820
0.827
0.832
0.833
0.846
0.843
0.850
−167.7
−169.9
−172.4
−174.6
−176.8
−179.6
177.9
6.7
5.7
4.8
4.0
3.2
2.5
1.5
1.1
0.2
0.0
2.17
1.91
1.74
1.58
1.45
1.33
1.19
1.13
1.02
0.99
53.7
51.4
46.4
44.3
39.7
38.4
34.6
31.6
28.3
27.1
−27.8
−28.3
−28.7
−29.0
−28.9
−30.0
−30.5
−31.0
−31.8
−32.2
0.040
0.038
0.036
0.035
0.035
0.031
0.030
0.028
0.025
0.024
−26.9
−29.2
−30.5
−31.4
−36.6
−38.5
−38.3
−38.7
−38.1
−40.9
0.749
0.763
0.776
0.789
0.803
0.808
0.814
0.829
0.834
0.840
−164.9
−166.9
−169.1
−171.0
−172.7
−175.0
−176.7
−179.2
178.7
17.2
17.0
16.8
16.5
16.1
16.3
16.0
16.1
16.0
16.1
0.35
0.42
0.45
0.48
0.44
0.62
0.78
0.70
0.98
0.97
175.6
172.9
170.3
176.5
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
0.851
0.854
0.861
0.857
0.870
0.870
0.867
0.870
0.873
0.882
167.1
165.1
162.3
159.5
156.6
153.9
151.6
148.9
146.5
143.9
−1.0
−1.6
−2.4
−2.3
−3.4
−3.6
−5.0
−4.8
−5.6
−5.7
0.89
0.83
0.75
0.76
0.67
0.65
0.56
0.57
0.52
0.51
23.3
21.4
16.9
15.5
13.8
12.0
9.0
−33.5
−34.1
−35.1
−34.9
−36.1
−35.8
−39.4
−39.9
−42.4
−41.3
0.021
0.019
0.017
0.017
0.015
0.016
0.010
0.010
0.007
0.008
−42.9
−48.0
−43.6
−40.8
−49.0
−36.8
−33.0
−43.4
−18.3
−15.0
0.842
0.847
0.856
0.866
0.862
0.865
0.866
0.879
0.879
0.885
174.4
172.1
169.1
167.0
164.7
162.0
159.1
156.7
154.5
152.0
12.4
11.7
10.9
11.5
10.2
10.1
7.8
1.42
1.62
1.88
1.68
2.20
2.13
4.44
3.96
6.01
4.60
3.9
8.6
4.7
7.6
2.7
8.2
S21
S12
(K – √ (K2 – 1) )
1+ ∆ 2 − S11 2 − S22
Note When K ≥ 1, the MAG (Maximum Available Gain) is used. MAG =
2
S21
S12
When K < 1, the MSG (Maximum Stable Gain) is used.
MSG =
, K =
,
2
S12
S21
∆ = S11 S22 − S21 S12
LARGE SIGNAL IMPEDANCE (VDS = 4.8 V, IDset = 100 mA, Pin = 20 dBm)
f (GHz)
1.9
Zin (Ω)
ZOL (Ω) Note
TBD
TBD
Note ZOL is the conjugate of optimum load impedance at given voltage, idling current, input power and frequency.
7
Data Sheet PU10118EJ01V1DS
NE5500179A
PACKAGE DIMENSIONS
79A (UNIT: mm)
(Bottom View)
4.2 MAX.
Source
1.5±0.2
Source
Gate
Drain
Gate
Drain
0.4±0.15
5.7 MAX.
0.8 MAX.
3.6±0.2
79A PACKAGE RECOMMENDED P.C.B. LAYOUT (UNIT: mm)
4.0
1.7
Source
Stop up the hole with a rosin or
something to avoid solder flow.
Drain
Gate
φ
Through Hole: 0.2 × 33
0.5 0.5
6.1
8
Data Sheet PU10118EJ01V1DS
NE5500179A
RECOMMENDED SOLDERING CONDITIONS
!
This product should be soldered and mounted under the following recommended conditions. For soldering
methods and conditions other than those recommended below, contact your nearby sales office.
Soldering Method
Infrared Reflow
Soldering Conditions
Condition Symbol
IR260
Peak temperature (package surface temperature)
Time at peak temperature
: 260°C or below
: 10 seconds or less
: 60 seconds or less
: 120±30 seconds
: 3 times
Time at temperature of 220°C or higher
Preheating time at 120 to 180°C
Maximum number of reflow processes
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
VPS
Peak temperature (package surface temperature)
Time at temperature of 200°C or higher
Preheating time at 120 to 150°C
: 215°C or below
: 25 to 40 seconds
: 30 to 60 seconds
: 3 times
VP215
WS260
Maximum number of reflow processes
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
Wave Soldering
Partial Heating
Peak temperature (molten solder temperature)
Time at peak temperature
: 260°C or below
: 10 seconds or less
Preheating temperature (package surface temperature) : 120°C or below
Maximum number of flow processes
: 1 time
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
Peak temperature (pin temperature)
Soldering time (per pin of device)
: 350°C or below
HS350-P3
: 3 seconds or less
: 0.2%(Wt.) or below
Maximum chlorine content of rosin flux (% mass)
Caution Do not use different soldering methods together (except for partial heating).
9
Data Sheet PU10118EJ01V1DS
NE5500179A
•
The information in this document is current as of March, 2002. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
•
•
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
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patents, copyrights or other intellectual property rights of NEC or others.
•
•
•
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purposes in semiconductor product operation and application examples. The incorporation of these
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to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.
and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4-0110
10
Data Sheet PU10118EJ01V1DS
NE5500179A
Business issue
NEC Compound Semiconductor Devices, Ltd.
5th Sales Group, Sales Division TEL: +81-3-3798-6372 FAX: +81-3-3798-6783 E-mail: salesinfo@csd-nec.com
NEC Compound Semiconductor Devices Hong Kong Limited
Hong Kong Head Office
Taipei Branch Office
Korea Branch Office
TEL: +852-3107-7303
FAX: +852-3107-7309
TEL: +886-2-8712-0478 FAX: +886-2-2545-3859
TEL: +82-2-528-0301
FAX: +82-2-528-0302
NEC Electron Devices European Operations
http://www.nec.de/
TEL: +49-211-6503-101 FAX: +49-211-6503-487
California Eastern Laboratories, Inc.
http://www.cel.com/
TEL: +1-408-988-3500 FAX: +1-408-988-0279
Technical issue
NEC Compound Semiconductor Devices, Ltd.
http://www.csd-nec.com/
Sales Engineering Group, Sales Division
E-mail: techinfo@csd-nec.com FAX: +81-44-435-1918
0110
相关型号：
NE5500179A-T1
4.8 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 AND GSM1900 TRANSMISSION AMPLIFIERS
CEL
NE5500179A-T1-A
RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 5.70 X 5.70 MM, 1.10 MM HEIGHT, 79A, 4 PIN
NEC
NE5500234
Power Field-Effect Transistor, 1A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWER, MINIMOLD PACKAGE-3
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NE5500234-AZ
Power Field-Effect Transistor, 1A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, POWER, MINIMOLD PACKAGE-3
NEC
NE5500234-T1-AZ
Power Field-Effect Transistor, 1A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWER, MINIMOLD PACKAGE-3
NEC
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