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NE552R479A-T1 [NEC]

RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 79A, 4 PIN;

NE552R479A-T1


元器件型号：	NE552R479A-T1
生产厂家：	NEC
描述和应用：	RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 79A, 4 PIN 放大器晶体管
PDF文件：	总9页 (文件大小：67K)
下载文档：	下载PDF数据表文档文件
型号参数：NE552R479A-T1参数

NE552R479A-T1A

RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 79A, 4 PIN

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0 NEC

NE552R479A-T1A

RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 79A, 4 PIN

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0 NEC

NE552R479A-T1A-A

NECs 3.0 V, 0.25 W L&S-BAND MEDIUM POWER SILICON LD-MOSFET

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36 CEL

NE552R479A-T1A-A

RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 79A, 4 PIN

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0 NEC

NE552R679A

Discrete

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35 ETC

NE552R679A

3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS

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22 NEC

NE552R679A

3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS

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25 NEC

NE552R679A-A

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 79A, 4 PIN

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0 NEC

NE552R679A-T1

3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS

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9 NEC

NE552R679A-T1

3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS

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20 NEC

NE552R679A-T1A

3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS

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17 NEC

NE552R679A-T1A

3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS

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3 NEC

NE552R679A-T1A-A

暂无描述

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0 NEC

NE5530F

Operational Amplifier, 2 Func, BIPolar, CDIP14

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3 PHILIPS

NE5530F-A

Operational Amplifier, 2 Func, BIPolar, CDIP14

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1 PHILIPS

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