NESG240033-FB-A [NEC]

RF Small Signal Bipolar Transistor, 0.4A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, LEAD FREE, MINIMOLD PACKAGE-3;


型号：	NESG240033-FB-A
厂家：	NEC
描述：	RF Small Signal Bipolar Transistor, 0.4A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, LEAD FREE, MINIMOLD PACKAGE-3 放大器 ISM频段光电二极管晶体管
文件：	总5页 (文件大小：54K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PRELIMINARY DATA SHEET

NPN SILICON GERMANIUM RF TRANSISTOR

NESG240033

NPN SiGe RF TRANSISTOR FOR

UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION

3-PIN MINIMOLD (33 PKG)

FEATURES

•

The device is an ideal choice for low noise, low distortion amplification.

NF = 0.75 dB TYP. @ V^CE= 5 V, IC = 15 mA, f = 1 GHz

P^{O (1 dB)}= 23.5 dBm TYP. @ VCE = 5 V, IC (set) = 40 mA, f = 1 GHz

OIP³= 35.5 dBm TYP. @ VCE = 5 V, IC (set) = 40 mA, f = 1 GHz

Maximum stable power gain: MSG =13.0 dB TYP. @ V^CE= 5 V, IC = 40 mA, f = 1 GHz

SiGe HBT technology (UHS2) : f^T= 10.5 GHz

•

This product is improvement of ESD of NESG2xxx series.

3-pin minimold (33 PKG)

ORDERING INFORMATION

Part Number

NESG240033

Order Number

Package

Quantity

Supplying Form

NESG240033-A

3-pin minimold

50 pcs

• 8 mm wide embossed taping

• Pin 3 (Collector) face the perforation side

of the tape

(33 PKG) (Pb-Free)

(Non reel)

NESG240033-T1B NESG240033-T1B-A

3 kpcs/reel

Remark To order evaluation samples, please contact your nearby sales office.

Unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (TA = +25°C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Base Current^{Note 1}

Symbol

VCBO

VCES

VCEO

Ratings

Unit

5.5

°C

Collector Current

400

Note 2

Total Power Dissipation

Junction Temperature

Storage Temperature

Ptot

700

150

Tstg

−65 to +150

Notes 1. Depend on the ESD protect device.

2. Mounted on 3.8 cm × 9.0 cm ×0.8 mm (t) glass epoxy PWB

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. PU10768EJ01V0DS (1st edition)

Date Published June 2009 NS

Printed in Japan

2009

NESG240033

THERMAL RESISTANCE (TA = +25°C)

Parameter

Symbol

Rth^j-a

Ratings

175

Unit

Termal Resistance from Junction to

Ambient^Note

°C/W

Note Mounted on 3.8 cm × 9.0 cm × 0.8 mm (t) glass epoxy PWB

RECOMMENDED OPERATING RANGE (TA = +25°C)

Parameter

Collector Current

Symbol

MIN.

TYP.

MAX.

100

Unit

−

ELECTRICAL CHARACTERISTICS (TA = +25°C)

Parameter

DC Characteristics

Symbol

Test Conditions

MIN.

TYP.

MAX.

Unit

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

ICBO

IEBO

VCB = 5 V, IE = 0 mA

−

100

260

−

VEB = 0.4 V, IC = 0 mA

VCE = 5 V, IC = 15 mA

Note 1

hFE

140

180

RF Characteristics

Gain Bandwidth Product

Insertion Power Gain

Noise Figure (1)

VCE = 5 V, IC = 40 mA, f = 1 GHz

−

9.5

−

10.5

11.5

0.75

−

GHz

⏐S21e⏐²VCE = 5 V, IC = 40 mA, f = 1 GHz

NF1

NF2

Ga1

Ga2

VCE = 5 V, IC = 15 mA, f = 1 GHz,

Z^S= ZSopt, ZL = 50Ω

1.15

Noise Figure (2)

VCE = 5 V, IC = 40 mA, f = 1 GHz,

Z^S= ZSopt, ZL = ZLopt

−

9.0

−

0.8

−

Associated Gain (1)

Associated Gain (2)

VCE = 5 V, IC = 15 mA, f = 1 GHz,

Z^S= ZSopt, ZL = 50Ω

11.0

12.0

VCE = 5 V, IC = 40 mA, f = 1 GHz,

Z^S= ZSopt, ZL = ZLopt

Note 2

Reverse Transfer Capacitance

Maximum Stable Power Gain

Cre

VCB = 5 V, IE = 0 mA, f = 1 MHz

−

11.0

−

0.9

1.1

−

MSG^{Note 3}VCE = 5 V, IC = 40 mA, f = 1 GHz

13.0

23.5

Gain 1 dB Compression Output

Power

PO (1 dB)

VCE = 5 V, IC (set) = 40 mA, f = 1 GHz,

Z^S= ZSopt, ZL = ZLopt

−

dBm

Output 3rd Order Intercept Point

OIP3

VCE = 5 V, IC (set) = 40 mA, f = 1 GHz,

−

35.5

−

dBm

Δf = 1 MHz, ZS = ZSopt, ZL = ZLopt

Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2%

2. Collector to base capacitance when the emitter grounded.

S21

S¹²

3. MSG =

hFE CLASSIFICATION

Rank

R7A

Marking

hFE Value

140 to 260

Preliminary Data Sheet PU10768EJ01V0DS

NESG240033

S-PARAMETERS

S-parameters and noise parameters are provided on our Web site in a format (S2P) that enables the direct import

of the parameters to microwave circuit simulators without the need for keyboard inputs.

Click here to download S-parameters.

[RF and Microwave] → [Device Parameters]

URL http://www.necel.com/microwave/en/

Preliminary Data Sheet PU10768EJ01V0DS

NESG240033

PACKAGE DIMENSIONS

3-PIN MINIMOLD (33 PKG) (UNIT: mm)

2.8 0.2

1.5

+0.1

0.65

–0.15

Marking

PIN CONNECTIONS

1. Emitter

2. Base

3. Collector

Preliminary Data Sheet PU10768EJ01V0DS

NESG240033

•

The information in this document is current as of June, 2009. The information is subject to change

without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets,

etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or

types are available in every country. Please check with an NEC Electronics sales representative for

availability and additional information.

• No part of this document may be copied or reproduced in any form or by any means without the prior

written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may

appear in this document.

•

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Descriptions of circuits, software and other related information in this document are provided for illustrative

purposes in semiconductor product operation and application examples. The incorporation of these

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responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by

customers or third parties arising from the use of these circuits, software and information.

•

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M8E0904E

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