NP32N055HLE [NEC]
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE; 切换N沟道功率MOS FET工业用型号: | NP32N055HLE |
厂家: | NEC |
描述: | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
文件: | 总8页 (文件大小:70K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP32N055HLE, NP32N055ILE
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
ORDERING INFORMATION
PART NUMBER
These products are N-channel MOS Field Effect
Transistor designed for high current switching
applications.
PACKAGE
TO-251
NP32N055HLE
NP32N055ILE
TO-252
FEATURES
• Channel temperature 175 degree rated
• Super low on-state resistance
RDS(on)1 = 24 mΩ MAX. (VGS = 10 V, ID = 16 A)
RDS(on)2 = 29 mΩ MAX. (VGS = 5.0 V, ID = 16 A)
• Low Ciss : Ciss = 1300 pF TYP.
• Built-in gate protection diode
(TO-251)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
VGSS
ID(DC)
ID(pulse)
PT
55
±20
±32
±100
1.2
V
V
Gate to Source Voltage
Drain Current (DC)
A
Drain Current (Pulse) Note1
Total Power Dissipation (TA = 25°C)
Total Power Dissipation (TC = 25°C)
Single Avalanche Current Note2
Single Avalanche Energy Note2
Channel Temperature
A
(TO-252)
W
W
PT
66
IAS
28 / 21 / 8
7.8 / 44 / 64
175
A
EAS
Tch
mJ
°C
°C
Storage Temperature
Tstg
–55 to +175
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 %
2. Starting Tch = 25°C, RG = 25 Ω , VGS = 20 V→0 V (See Figure 4.)
THERMAL RESISTANCE
Channel to Case
Rth(ch-C)
Rth(ch-A)
2.27
125
°C/W
°C/W
Channel to Ambient
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
Date Published March 2001 NS CP(K)
Printed in Japan
D14137EJ3V0DS00 (3rd edition)
1999
The mark ★ shows major revised points.
©
NP32N055HLE, NP32N055ILE
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS
SYMBOL
RDS(on)1
RDS(on)2
RDS(on)3
VGS(th)
| yfs |
IDSS
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Drain to Source On-state Resistance
VGS = 10 V, ID = 16 A
VGS = 5.0 V, ID = 16 A
VGS = 4.5 V, ID = 16 A
VDS = VGS, ID = 250 µA
VDS = 10 V, ID = 16 A
19
22
24
2
24
29
33
2.5
mΩ
mΩ
mΩ
V
Gate to Source Threshold Voltage
Forward Transfer Admittance
Drain Leakage Current
Gate to Source Leakage Current
Input Capacitance
1.5
8
16
S
VDS = 55 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
VDS = 25 V, VGS = 0 V, f = 1 MHz
10
µA
µA
pF
pF
pF
ns
IGSS
±10
Ciss
1300 2000
Output Capacitance
Coss
180
90
14
8
270
160
31
Reverse Transfer Capacitance
Turn-on Delay Time
Crss
td(on)
tr
td(off)
tf
ID = 16 A, VGS(on) = 10 V, VDD = 28 V,
Rise Time
RG = 1 Ω
20
ns
Turn-off Delay Time
40
7.4
27
15
5
81
ns
Fall Time
19
ns
Total Gate Charge
QG1
ID = 32 A, VDD = 44 V, VGS = 10 V
ID = 32 A, VDD = 44 V, VGS = 5.0 V
41
nC
nC
nC
nC
V
QG2
23
Gate to Source Charge
Gate to Drain Charge
QGS
QGD
VF(S-D)
trr
9
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
IF = 32 A, VGS = 0 V
1.0
41
58
IF = 32 A, VGS = 0 V, di/dt = 100 A/µs
ns
Qrr
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
D.U.T.
V
V
GS
R
L
RG
= 25 Ω
90%
GS(on)
V
GS
Wave Form
V
10%
90%
0
R
G
PG.
PG.
50 Ω
V
DD
V
DD
V
GS = 20→0V
DS
90%
V
DS
V
0
GS
BVDSS
10% 10%
V
DS
Wave Form
0
I
AS
V
DS
τ
I
D
t
d(on)
t
r
t
d(off)
tf
V
DD
t
on
toff
τ = 1 µs
Duty Cycle ≤ 1 %
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
= 2 mA
I
G
RL
PG.
50 Ω
V
DD
2
Data Sheet D14137EJ3V0DS
NP32N055HLE, NP32N055ILE
TYPICAL CHARACTERISTICS (TA = 25 °C)
Figure2. TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
Figure1. DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
70
60
50
40
30
20
10
0
100
80
60
40
20
0
0
25 50 75 100 125 150 175 200
0
25 50 75 100 125 150 175 200
- Case Temperature - ˚C
TC - Case Temperature - ˚C
T
C
Figure4. SINGLE AVALANCHE ENERGY
DERATING FACTOR
★
Figure3. FORWARD BIAS SAFE OPERATING AREA
1000
70
60
50
40
64 mJ
I
D(pulse)
1 ms
100
I
D(DC)
44 mJ
PowerDDiCssipation
Limited
I
AS = 8 A
21 A
10
28 A
30
20
10
0
1
7.8 mJ
T
C
= 25˚C
Single Pulse
0.1
0.1
1
10
100
25
50
75
100
125
150
175
V
DS
-
Drain to Source Voltage - V
Starting Tch - Starting Channel Temperature - ˚C
Figure5. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
Rth(ch-A) = 125 ˚C/W
100
10
Rth(ch-C) = 2.27 ˚C/W
1
0.1
0.01
Single Pulse
T
C
= 25˚C
µ
10
1 m
10 m
100 m
1
10
100
1000
100
µ
PW - Pulse Width - s
3
Data Sheet D14137EJ3V0DS
NP32N055HLE, NP32N055ILE
Figure7. DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Figure6. FORWARD TRANSFER CHARACTERISTICS
120
100
80
100
Pulsed
Pulsed
V
GS =10 V
10
T
A
= −55˚C
25˚C
75˚C
150˚C
175˚C
5.0 V
60
1
0.1
4.5 V
40
20
V
DS = 10 V
0
0.01
1
2
3
4
5
6
7
8
0
1.0
2.0
3.0
4.0
5.0 6.0
V
GS - Gate to Source Voltage - V
VDS - Drain to Source Voltage - V
Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
Figure8. FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
40
100
Pulsed
DS = 10 V
Pulsed
V
30
10
T
A
= 175˚C
75˚C
I = 16 A
D
20
10
0
1
0.1
25˚C
−55˚C
0.01
0
0.01
0.1
1
10
100
2
4
6
8
10 12 14 16 18 20
V
GS - Gate to Source Voltage - V
ID - Drain Current - A
Figure10. DRAIN TO SOURCE ON-STATE
Figure11. GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
RESISTANCE vs. DRAIN CURRENT
80
70
60
50
40
30
20
10
0
3.0
Pulsed
V
DS = V
GµS
I
D
= 250 A
2.0
V
GS = 10 V
5.0 V
4.5 V
1.0
0
0.1
1
10
100
0
−50
50
100
150
I
D - Drain Current - A
T
ch - Channel Temperature - ˚C
4
Data Sheet D14137EJ3V0DS
NP32N055HLE, NP32N055ILE
Figure13. SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Figure12. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
60
1000
100
Pulsed
50
V
GS = 4.5 V
5.0 V
40
30
20
VGS = 10 V
10 V
10
V
GS = 0 V
1
10
0
I
D
= 16 A
0.1
100
150
0
50
−50
0
0.5
1.0
1.5
T
ch - Channel Temperature - ˚C
V
SD - Source to Drain Voltage - V
Figure14. CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
Figure15. SWITCHING CHARACTERISTICS
1000
100
10000
V
GS = 0 V
f = 1 MHz
Ciss
t
f
1000
t
d(off)
t
d(on)
Coss
10
1
100
10
t
r
C
rss
0.1
1
10
100
0.1
1
10
100
I
D
- Drain Current - A
V
DS - Drain to Source Voltage - V
Figure16. REVERSE RECOVERY TIME vs.
DRAIN CURRENT
Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS
80
16
14
12
10
8
1000
100
di/dt = 100 A/µs
GS = 0 V
V
60
V
GS
V
DD = 44 V
28 V
11 V
40
20
6
10
1
4
V
DS
2
I
D
= 32 A
28 32
0
0
4
8
12 16 20 24
- Gate Charge - nC
0.1
1.0
10
100
Q
G
I
F
- Drain Current - A
5
Data Sheet D14137EJ3V0DS
NP32N055HLE, NP32N055ILE
PACKAGE DRAWINGS (Unit: mm)
1) TO-251 (MP-3)
2) TO-252 (MP-3Z)
2.3±0.2
0.5±0.1
6.5±0.2
6.5±0.2
2.3±0.2
5.0±0.2
4
5.0±0.2
0.5±0.1
4
1
2
3
1
2
3
1.3 MAX.
0.9
0.8
1.3 MAX.
MAX. MAX.
2.3 2.3
0.8
0.6±0.1
0.6±0.1
1.Gate
1. Gate
2.3 2.3
2. Drain
3. Source
2.Drain
4. Fin (Drain)
3.Source
4.Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Body
Diode
Gate
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
6
Data Sheet D14137EJ3V0DS
NP32N055HLE, NP32N055ILE
[MEMO]
7
Data Sheet D14137EJ3V0DS
NP32N055HLE, NP32N055ILE
•
The information in this document is current as of March, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
•
•
No part of this document may be copied or reproduced in any form or by any means without prior
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•
•
•
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M8E 00. 4
相关型号:
NP32N055IHE
32A, 55V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252, MP-3Z, 3 PIN
RENESAS
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