NP34N055IHE-AZ [NEC]
Power Field-Effect Transistor, 34A I(D), 55V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, MP-3Z, 3 PIN;型号: | NP34N055IHE-AZ |
厂家: | NEC |
描述: | Power Field-Effect Transistor, 34A I(D), 55V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, MP-3Z, 3 PIN |
文件: | 总7页 (文件大小:170K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP34N055HHE, NP34N055IHE, NP34N055SHE
SWITCHING
N-CHANNEL POWER MOSFET
DESCRIPTION
ORDERING INFORMATION
These products are N-Channel MOS Field Effect Tran-
sistors designed for high current switching applications.
PART NUMBER
PACKAGE
NP34N055HHE
TO-251 (JEITA) / MP-3
TO-252 (JEITA) / MP-3Z
TO-252 (JEDEC) / MP-3ZK
Note
NP34N055IHE
FEATURES
• Channel temperature 175 degree rated
• Super low on-state resistance
RDS(on) = 19 mΩ MAX. (VGS = 10 V, ID = 17 A)
• Low Ciss : Ciss = 1600 pF TYP.
• Built-in gate protection diode
NP34N055SHE
Note Not for new design.
(TO-251)
(TO-252)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
VGSS
ID(DC)
ID(pulse)
PT
55
V
V
A
Gate to Source Voltage
±20
±34
Drain Current (DC)
Drain Current (Pulse) Note1
Total Power Dissipation (TA = 25°C)
Total Power Dissipation (TC = 25°C)
Single Avalanche Current Note2
Single Avalanche Energy Note2
Channel Temperature
±136
1.2
A
W
W
A
PT
88
IAS
34 / 27 / 10
EAS
11 / 72 / 100 mJ
175 °C
–55 to + 175 °C
Tch
Storage Temperature
Tstg
Notes 1. PW ≤ 10 µ s, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, RG = 25 Ω, VGS = 20 → 0 V (See Figure 4.)
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
1.70
125
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No.
D14153EJ4V0DS00 (4th edition)
The mark
shows major revised points.
Date Published July 2005 NS CP(K)
Printed in Japan
1999, 2005
NP34N055HHE, NP34N055IHE, NP34N055SHE
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
10
UNIT
µA
µA
V
VDS = 55 V, VGS = 0 V
IDSS
VGS = ±20 V, VDS = 0 V
VDS = VGS, ID = 250 µA
VDS = 10 V, ID = 17 A
VGS = 10 V, ID = 17 A
VDS = 25 V
±10
4.0
IGSS
VGS(th)
| yfs |
RDS(on)
Ciss
2.0
6
3.0
12
Gate to Source Threshold Voltage
Note
Forward Transfer Admittance
S
Note
15
19
2400
380
220
47
mΩ
pF
pF
pF
ns
Drain to Source On-state Resistance
Input Capacitance
1600
250
120
21
VGS = 0 V
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Coss
Crss
f = 1 MHz
VDD = 28 V, ID = 17 A
VGS = 10 V
td(on)
tr
15
38
ns
RG = 1 Ω
35
70
Turn-off Delay Time
Fall Time
td(off)
tf
ns
12
29
ns
VDD = 44 V
30
45
Total Gate Charge
QG
nC
nC
nC
V
VGS = 10 V
9
Gate to Source Charge
Gate to Drain Charge
QGS
QGD
VF(S-D)
trr
ID = 34 A
12
Note
IF = 34 A, VGS = 0 V
IF = 34 A, VGS = 0 V
di/dt = 100 A/µs
1.0
40
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Note Pulsed
ns
58
Qrr
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
D.U.T.
V
GS
0
RG
= 25 Ω
50 Ω
R
L
90%
V
GS
Wave Form
V
GS
10%
90%
R
G
PG.
V
DD
PG.
GS = 20 → 0 V
V
DD
V
VDS
90%
V
DS
V
0
GS
BVDSS
10% 10%
V
DS
Wave Form
0
I
AS
V
DS
I
D
τ
t
d(on)
t
r
t
d(off)
t
f
V
DD
t
on
t
off
τ = 1
µs
Duty Cycle ≤ 1%
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
= 2 mA
IG
RL
50 Ω
PG.
VDD
2
Data Sheet D14153EJ4V0DS
NP34N055HHE, NP34N055IHE, NP34N055SHE
TYPICAL CHARACTERISTICS (TA = 25°C)
Figure2. TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
Figure1. DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
140
120
100
80
100
80
60
40
20
0
60
40
20
0
0
25 50 75 100 125 150 175 200
0
25 50 75 100 125 150 175 200
- Case Temperature - ˚C
T
C
TC - Case Temperature - ˚C
Figure4. SINGLE AVALANCHE ENERGY
DERATING FACTOR
Figure3. FORWARD BIAS SAFE OPERATING AREA
120
100
80
60
40
20
0
1000
100
10
100 mJ
72 mJ
I
D(pulse)
I
D(DC)
DC
IAS = 10 A
27 A
34 A
1
11 mJ
T
C
= 25˚C
Single Pulse
0.1
0.1
1
10
100
25
50
75
100
125
150
175
V
DS - Drain to Source Voltage - V
Starting Tch - Starting Channel Temperature - ˚C
Figure5. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
R
th(ch-A) = 125 ˚C/W
th(ch-C) = 1.70 ˚C/W
100
10
R
1
0.1
0.01
Single Pulse
= 25˚C
T
C
10 µ
1 m
10 m
100 m
1
10
100
1000
100 µ
PW - Pulse Width - s
3
Data Sheet D14153EJ4V0DS
NP34N055HHE, NP34N055IHE, NP34N055SHE
Figure6. FORWARD TRANSFER CHARACTERISTICS
Figure7. DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
100
Pulsed
Pulsed
200
160
120
10
T
A
= 175˚C
150˚C
75˚C
1
0.1
V
GS =10 V
25˚C
−55˚C
80
40
0
0.01
1
2
5
6
3
4
4
8
6
0
2
VGS - Gate to Source Voltage - V
VDS - Drain to Source Voltage - V
Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
Figure8. FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
40
V
DS=10V
Pulsed
Pulsed
35
10
30
25
20
15
10
5
ID = 17 A
TA
= 175˚C
75˚C
1
0.1
25˚C
−55˚C
0.01
0.01
0
0.1
1
10
100
0
5
10
15
20
ID - Drain Current - A
V
GS - Gate to Source Voltage - V
Figure10. DRAIN TO SOURCE ON-STATE
Figure11. GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
RESISTANCE vs. DRAIN CURRENT
V
GµS
D=S =25V0
A
Pulsed
30
20
I
D
4.0
3.0
2.0
1.0
0
V
GS = 10 V
10
0
1
10
100
1000
−50
0
50
100
150
I
D - Drain Current - A
T
ch - Channel Temperature - ˚C
4
Data Sheet D14153EJ4V0DS
NP34N055HHE, NP34N055IHE, NP34N055SHE
Figure12. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
Figure13. SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
45
40
35
30
25
20
15
10
5
1000
100
Pulsed
Pulsed
V
GS = 10 V
V
GS = 10 V
10
1
V
GS = 0 V
I
D
= 17 A
0
0.1
0
1.5
1.0
- Source to Drain Voltage - V
0.5
100
150
0
50
−50
V
SD
Tch - Channel Temperature - ˚C
Figure14. CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
Figure15. SWITCHING CHARACTERISTICS
1000
100
10000
1000
100
V
GS = 0 V
f = 1 MHz
t
t
f
C
iss
t
d(off)
d(on)
C
oss
rss
t
r
10
1
C
0.1
1
10
100
10
0.1
1
10
100
I
D
- Drain Current - A
VDS - Drain to Source Voltage - V
Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS
Figure16. REVERSE RECOVERY TIME vs.
DRAIN CURRENT
16
14
12
10
8
80
70
60
50
40
30
20
10
0
1000
100
di/dt = 100 A/µs
GS = 0 V
V
V
DD = 44 V
28 V
11 V
V
GS
6
10
1
4
VDS
2
ID
= 34 A
28 32
0
0
4
8
12 16
20 24
0.1
1
10
100
QG
- Gate Charge - nC
IF
- Drain Current - A
5
Data Sheet D14153EJ4V0DS
NP34N055HHE, NP34N055IHE, NP34N055SHE
PACKAGE DRAWINGS (Unit: mm)
1) TO-251 (JEITA) / MP-3
2) TO-252 (JEITA) / MP-3Z
2.3 0.2
6.5 0.2
2.3 0.2
6.5 0.2
5.0 0.2
4
0.5 0.1
5.0 0.2
0.5 0.1
4
1
2
3
DESIGN
1
2
3
1.1 0.2
NEW
1.1 0.2
0.9 MAX.
0.8 MAX.
+0.2
−0.1
+0.2
0.5
0.5
−0.1
2.3 TYP.
2.3 TYP.
0.8 TYP.
2.3 TYP.
2.3 TYP.
FOR
1. Gate
2. Drain
3. Source
1. Gate
2. Drain
3. Source
4. Fin (Drain)
NOT
4. Fin (Drain)
3) TO-252 (JEDEC) / MP-3ZK
2.3 0.1
6.5 0.2
5.1 TYP.
4.3 MIN.
0.5 0.1
No Plating
EQUIVALENT CIRCUIT
4
Drain
1
2
3
Body
Diode
Gate
No Plating
0.76 0.12
1.14 MAX.
0 to 0.25
0.5 0.1
2.3 2.3
Gate
Protection
Diode
1.0
Source
1. Gate
2. Drain
3. Source
4. Fin (Drain)
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
6
Data Sheet D14153EJ4V0DS
NP34N055HHE, NP34N055IHE, NP34N055SHE
•
The information in this document is current as of July, 2005. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all
products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
•
NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from the use of NEC Electronics products listed in this document
or any other liability arising from the use of such products. No license, express, implied or otherwise, is
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of a customer's equipment shall be done under the full
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by
customers or third parties arising from the use of these circuits, software and information.
•
• While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products,
customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To
minimize risks of damage to property or injury (including death) to persons arising from defects in NEC
Electronics products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment and anti-failure features.
• NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and
"Specific".
The "Specific" quality grade applies only to NEC Electronics products developed based on a customer-
designated "quality assurance program" for a specific application. The recommended applications of an NEC
Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of
each NEC Electronics product before using it in a particular application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots.
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support).
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to
determine NEC Electronics' willingness to support a given application.
(Note)
(1)
"NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
(2)
"NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
M8E 02. 11-1
相关型号:
NP34N055ILE-AZ
Power Field-Effect Transistor, 34A I(D), 55V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, MP-3Z, 3 PIN
NEC
NP34N055SLE
34A, 55V, 0.024ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252, MP-3ZK, 3 PIN
RENESAS
NP3500GARLG
400V, SILICON SURGE PROTECTOR, DO-15, ROHS COMPLIANT, PLASTIC, CASE 59AA-01, 2 PIN
ONSEMI
©2020 ICPDF网 联系我们和版权申明