NP80N055NLE [NEC]
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET; MOS场效应晶体管的开关N沟道功率MOS FET
| 型号： | NP80N055NLE |
| 厂家： | 
NEC |
| 描述： | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| 文件： | 总10页 (文件大小：218K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP80N055ELE, NP80N055KLE
NP80N055CLE, NP80N055DLE, NP80N055MLE, NP80N055NLE
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
<R>
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
Pure Sn (Tin)
PACKING
PACKAGE
NP80N055ELE-E1-AY Note1, 2
NP80N055ELE-E2-AY Note1, 2
NP80N055KLE-E1-AY Note1
NP80N055KLE-E2-AY Note1
NP80N055CLE-S12-AZ Note1, 2
NP80N055DLE-S12-AY Note1, 2
NP80N055MLE-S18-AY Note1
NP80N055NLE-S18-AY Note1
TO-263 (MP-25ZJ) typ. 1.4 g
Tape 800 p/reel
TO-263 (MP-25ZK) typ. 1.5 g
Sn-Ag-Cu
TO-220 (MP-25) typ. 1.9 g
TO-262 (MP-25 Fin Cut) typ. 1.8 g
TO-220 (MP-25K) typ. 1.9 g
TO-262 (MP-25SK) typ. 1.8 g
Tube 50 p/tube
Pure Sn (Tin)
Notes 1. Pb-free (This product does not contain Pb in the external electrode.)
2. Not for new design
(TO-220)
FEATURES
• Channel temperature 175 degree rated
• Super low on-state resistance
RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 40 A)
RDS(on)2 = 13 mΩ MAX. (VGS = 5 V, ID = 40 A)
RDS(on)3 = 15 mΩ MAX. (VGS = 4.5 V, ID = 40 A)
• Low input capacitance
(TO-262)
Ciss = 2900 pF TYP.
• Built-in gate protection diode
(TO-263)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D14097EJ6V0DS00 (6th edition)
Date Published October 2007 NS
Printed in Japan
2002, 2007
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
NP80N055ELE, NP80N055KLE, NP80N055CLE, NP80N055DLE, NP80N055MLE, NP80N055NLE
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C) Note1
Drain Current (Pulse) Note2
VDSS
VGSS
ID(DC)
ID(pulse)
PT
55
20
V
V
80
A
200
A
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
Channel Temperature
120
W
W
°C
°C
A
PT
1.8
Tch
175
Storage Temperature
Tstg
−55 to +175
45/30/10
2.0/90/100
Single Avalanche Current Note3
Single Avalanche Energy Note3
IAS
EAS
mJ
Notes 1. Calculated constant current according to MAX. allowable channel temperature.
2. PW ≤ 10 μs, Duty cycle ≤ 1%
3. Starting Tch = 25°C, VDD = 28 V, RG = 25 Ω, VGS = 20→0 V (see Figure 4.)
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
1.25
83.3
°C/W
°C/W
Rth(ch-A)
2
Data Sheet D14097EJ6V0DS
NP80N055ELE, NP80N055KLE, NP80N055CLE, NP80N055DLE, NP80N055MLE, NP80N055NLE
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
IDSS
VDS = 55 V, VGS = 0 V
10
10
μA
μA
V
IGSS
VGS = 20 V, VDS = 0 V
VDS = VGS, ID = 250 μA
VDS = 10 V, ID = 40 A
VGS = 10 V, ID = 40 A
VGS = 5 V, ID = 40 A
VGS = 4.5 V, ID = 40 A
VDS = 25 V,
Gate to Source Threshold Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
VGS(th)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
1.5
15
2.0
40
2.5
S
8.4
11
13
15
mΩ
mΩ
mΩ
pF
pF
pF
ns
10.3
11.3
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
2900 4400
Coss
VGS = 0 V,
380
170
22
570
310
48
Crss
f = 1 MHz
td(on)
tr
VDD = 28 V, ID = 40 A,
VGS = 10 V,
10
25
ns
Turn-off Delay Time
Fall Time
td(off)
tf
RG = 1 Ω
62
120
27
ns
11
ns
Total Gate Charge
QG1
VDD = 44 V, VGS = 10 V, ID = 80 A
VDD = 44 V,
50
75
nC
nC
nC
nC
V
QG2
26
39
Gate to Source Charge
Gate to Drain Charge
QGS
VGS = 5 V,
12
QGD
VF(S-D)
trr
ID = 80 A
15
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
IF = 80 A, VGS = 0 V
IF = 80 A, VGS = 0 V,
di/dt = 100 A/μs
1.0
50
ns
Qrr
100
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
D.U.T.
V
V
GS
R
L
RG
= 25 Ω
90%
V
GS
Wave Form
V
GS
10%
90%
0
R
G
PG.
GS = 20 → 0 V
PG.
50 Ω
V
DD
V
DD
V
DS
90%
V
DS
V
0
GS
BVDSS
10% 10%
V
DS
Wave Form
0
I
AS
V
DS
τ
I
D
t
d(on)
t
r
t
d(off)
tf
V
DD
t
on
toff
τ = 1 μs
Duty Cycle ≤ 1%
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
= 2 mA
I
G
RL
PG.
50 Ω
V
DD
3
Data Sheet D14097EJ6V0DS
NP80N055ELE, NP80N055KLE, NP80N055CLE, NP80N055DLE, NP80N055MLE, NP80N055NLE
TYPICAL CHARACTERISTICS (TA = 25°C)
Figure2. TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
Figure1. DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
140
120
100
80
100
80
60
40
20
0
60
40
20
0
0
25 50 75 100 125 150 175 200
0
25 50 75 100 125 150 175 200
- Case Temperature - °C
TC - Case Temperature - °C
T
C
Figure3. FORWARD BIAS SAFE OPERATING AREA
Figure4. SINGLE AVALANCHE ENERGY
DERATING FACTOR
120
100
80
60
40
20
0
1000
PW = 10
100 mJ
90 mJ
I
D(pulse)
1 ms
100
μ
s
I
D(DC)
100
10
μ
s
Limited
= 10 V)
P
DC
r Dissipation
o
w
RDS(on)
(VGS
Limiteed
I
AS = 10 A
30 A
45 A
1
T
C
= 25°C
Single Pulse
2.0 mJ
25 50
Starting Tch - Starting Channel Temperature - °C
0.1
0.1
75
100
125
150
175
1
10
100
V
DS - Drain to Source Voltage - V
Figure5. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
100
Rth(ch-A) = 83.3°C/W
10
1
Rth(ch-C) = 1.25°C/W
0.1
0.01
Single Pulse
100 1000
1 m
10 m
100 m
1
10
100
μ
10
μ
PW - Pulse Width - s
4
Data Sheet D14097EJ6V0DS
NP80N055ELE, NP80N055KLE, NP80N055CLE, NP80N055DLE, NP80N055MLE, NP80N055NLE
Figure6. FORWARD TRANSFER CHARACTERISTICS
Figure7. DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
100
200
160
120
80
Pulsed
Pulsed
V
GS =10 V
10
5 V
T
A
= −50°C
25°C
75°C
4.5 V
1
0.1
150°C
175°C
40
0.01
0
5
6
1
2
3
4
3
4
5
0
1
2
VGS - Gate to Source Voltage - V
V
DS - Drain to Source Voltage - V
Figure8. FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
100
50
V
DS = 10V
Pulsed
Pulsed
40
30
20
10
T
A
= 175°C
75°C
25°C
1
0.1
−50°C
I = 40 A
D
10
0
0.01
0.01
0.1
1
10
100
0
2
4
6
8
10 12 14 16 18
ID - Drain Current - A
VGS - Gate to Source Voltage - V
Figure11. GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
3.0
Figure10. DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
VDS = VGS
ID = 250 μA
2.5
Pulsed
30
20
2.0
1.5
1.0
V
GS = 4.5 V
5 V
10 V
10
0
0.5
0
−50
0
50
100
150
1
10
100
1000
Tch - Channel Temperature - °C
ID - Drain Current - A
5
Data Sheet D14097EJ6V0DS
NP80N055ELE, NP80N055KLE, NP80N055CLE, NP80N055DLE, NP80N055MLE, NP80N055NLE
Figure13. SOURCE TO DRAIN DIODE
Figure12. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
FORWARD VOLTAGE
1000
100
10
24
Pulsed
Pulsed
20
V
GS = 4.5 V
5 V
V
GS = 10 V
16
12
8
10 V
0 V
1
4
I
D
= 40 A
0.1
0
0
1.5
1.0
F(S-D) - Source to Drain Voltage - V
0.5
100
150
0
50
−50
V
T
ch - Channel Temperature - °C
Figure15. SWITCHING CHARACTERISTICS
Figure14. CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
1000
10000
1000
V
GS = 0 V
f = 1 MHz
t
f
C
iss
100
10
1
t
d(off)
d(on)
Coss
rss
t
C
t
r
100
10
V
V
DD = 28 V
GS = 10 V
R
G
= 1 Ω
0.1
1
10
100
0.1
1
10
100
I
D
- Drain Current - A
V
DS - Drain to Source Voltage - V
Figure16. REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS
16
14
12
10
8
80
70
60
50
40
30
20
10
0
1000
100
di/dt = 100 A/μs
V
GS = 0 V
V
GS
V
DD = 44 V
28 V
11 V
6
10
1
4
VDS
2
I
D
= 80 A
0
0
10 20 30 40 50 60 70 80
- Gate Charge - nC
0.1
1
10
100
Q
G
I
F
- Diode Forward Current - A
6
Data Sheet D14097EJ6V0DS
NP80N055ELE, NP80N055KLE, NP80N055CLE, NP80N055DLE, NP80N055MLE, NP80N055NLE
<R>
PACKAGE DRAWINGS (Unit: mm)
1)TO-263 (MP-25ZJ) Note
2)TO-263 (MP-25ZK)
4.8 MAX.
10 TYP.
4
10.0 0.3
4.45 0.2
1.3 0.2
1.3 0.2
No plating
7.88 MIN.
4
0.025 to
0.25
1
2
3
1.4 0.2
0.7 0.2
0.5 0.2
2.54 TYP.
2.54 TYP.
0.75 0.2
2.54
0.25
1.Gate
1
2
3
2.Drain
3.Source
4.Fin (Drain)
1.Gate
2.Drain
3.Source
4.Fin (Drain)
3)TO-220 (MP-25) Note
4)TO-262 (MP-25 Fin Cut) Note
4.8 MAX.
1.3 0.2
10.6 MAX.
10.0 TYP.
4.8 MAX.
φ
3.6 0.2
10 TYP.
1.3 0.2
4
1
2
3
4
1
2 3
1.3 0.2
1.3 0.2
2.8 0.2
0.5 0.2
1.Gate
0.75 0.3
2.54 TYP.
2.54 TYP.
0.75 0.1
2.54 TYP.
0.5 0.2
2.8 0.2
2.54 TYP.
2.Drain
1.Gate
3.Source
4.Fin (Drain)
2.Drain
3.Source
4.Fin (Drain)
Note Not for new design
7
Data Sheet D14097EJ6V0DS
NP80N055ELE, NP80N055KLE, NP80N055CLE, NP80N055DLE, NP80N055MLE, NP80N055NLE
6)TO-262 (MP-25SK)
5)TO-220 (MP-25K)
4.45 0.2
1.3 0.2
φ
3.8 0.2
10.0 0.2
4.45 0.2
1.3 0.2
10.0 0.2
4
4
1
2 3
1
2
3
1.27 0.2
0.8 0.1
1.27 0.2
0.8 0.1
0.5 0.2
2.5 0.2
0.5 0.2
1.Gate
2.5 0.2
2.54 TYP.
2.54 TYP.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
2.54 TYP.
2.54 TYP.
2.Drain
3.Source
4.Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Body
Diode
Gate
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
8
Data Sheet D14097EJ6V0DS
NP80N055ELE, NP80N055KLE, NP80N055CLE, NP80N055DLE, NP80N055MLE, NP80N055NLE
<R>
<R>
<R>
TAPE INFORMATION
There are two types (-E1, -E2) of taping depending on the direction of the device.
Draw-out side
Reel side
MARKING INFORMATION
NEC
Pb-free plating marking
80N055
LE
Abbreviation of part number
Lot code
RECOMMENDED SOLDERING CONDITIONS
These products should be soldered and mounted under the following recommended conditions.
For soldering methods and conditions other than those recommended below, please contact an NEC Electronics
sales representative.
For technical information, see the following website.
Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html)
Recommended
Soldering Method
Infrared reflow
Soldering Conditions
Condition Symbol
IR60-00-3
Maximum temperature (Package's surface temperature): 260°C or below
Time at maximum temperature: 10 seconds or less
Time of temperature higher than 220°C: 60 seconds or less
Preheating time at 160 to 180°C: 60 to 120 seconds
Maximum number of reflow processes: 3 times
MP-25ZJ, MP-25ZK
Maximum chlorine content of rosin flux (percentage mass): 0.2% or less
Maximum temperature (Solder temperature): 260°C or below
Time: 10 seconds or less
Wave soldering
MP-25, MP-25K, MP-25SK,
MP-25 Fin Cut
THDWS
P350
Maximum chlorine content of rosin flux: 0.2% (wt.) or less
Maximum temperature (Pin temperature): 350°C or below
Time (per side of the device): 3 seconds or less
Partial heating
MP-25ZJ, MP-25ZK,
MP-25K, MP-25SK
Partial heating
Maximum chlorine content of rosin flux: 0.2% (wt.) or less
Maximum temperature (Pin temperature): 300°C or below
Time (per side of the device): 3 seconds or less
MP-25, MP-25 Fin Cut
P300
Maximum chlorine content of rosin flux: 0.2% (wt.) or less
Caution Do not use different soldering methods together (except for partial heating).
9
Data Sheet D14097EJ6V0DS
NP80N055ELE, NP80N055KLE, NP80N055CLE, NP80N055DLE, NP80N055MLE, NP80N055NLE
•
The information in this document is current as of October, 2007. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
•
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•
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The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
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(Note)
(1)
"NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
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M8E 02. 11-1
相关型号：
NP80N06ELC
80A, 60V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, MP-25ZJ, TO-263, 3 PIN
RENESAS
NP80N06ELD
80A, 60V, 0.02ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, MP-25ZJ, 3 PIN
RENESAS
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