NP82N06PDG-E2-AY [NEC]
Power Field-Effect Transistor, 82A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, MP-25ZP, 3 PIN;型号: | NP82N06PDG-E2-AY |
厂家: | NEC |
描述: | Power Field-Effect Transistor, 82A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, MP-25ZP, 3 PIN 开关 脉冲 晶体管 |
文件: | 总8页 (文件大小:170K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP82N06PDG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP82N06PDG is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
Pure Sn (Tin)
PACKING
PACKAGE
NP82N06PDG-E1-AY Note
NP82N06PDG-E2-AY Note
Tape
TO-263 (MP-25ZP)
typ. 1.5 g
800 p/reel
Note See “TAPE INFORMATION”
FEATURES
(TO-263)
• Super low on-state resistance
RDS(on)1 = 6.7 mΩ MAX. (VGS = 10 V, ID = 41 A)
RDS(on)2 = 8.5 mΩ MAX. (VGS = 5 V, ID = 41 A)
• Low Ciss
Ciss = 5700 pF TYP.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
60
±20
V
V
±82
A
±270
143
A
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
Channel Temperature
W
W
°C
°C
A
PT2
1.8
Tch
175
Storage Temperature
Repetitive Avalanche Current Note2
Tstg
−55 to +175
37
IAR
Repetitive Avalanche Energy Note2
EAR
137
mJ
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Tch ≤ 150°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
1.05
83.3
°C/W
°C/W
Rth(ch-A)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18227EJ1V0DS00 (1st edition)
Date Published June 2006 NS CP(K)
Printed in Japan
2006
NP82N06PDG
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
SYMBOL
IDSS
TEST CONDITIONS
VDS = 60 V, VGS = 0 V
MIN. TYP. MAX. UNIT
1
μA
nA
IGSS
VGS = ±20 V, VDS = 0 V
VDS = VGS, ID = 250 μA
VDS = 10 V, ID = 41 A
VGS = 10 V, ID = 41 A
VGS = 5 V, ID = 41 A
VDS = 25 V
±100
Note
Gate to Source Threshold Voltage
VGS(th)
| yfs |
RDS(on)1
RDS(on)2
Ciss
1.5
19
2.0
45
2.5
V
S
Note
Forward Transfer Admittance
Note
Drain to Source On-state Resistance
5.1
6.0
5700
420
275
28
6.7
8.5
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Coss
Crss
VGS = 0 V
f = 1 MHz
td(on)
tr
VDD = 30 V
ID = 41 A
22
Turn-off Delay Time
Fall Time
td(off)
tf
VGS = 10 V
79
RG = 0 Ω
9
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
QG
VDD = 48 V
106
29
QGS
QGD
VF(S-D)
trr
VGS = 10 V
ID = 82 A
35
Note
Body Diode Forward Voltage
IF = 82 A, VGS = 0 V
IF = 82 A, VGS = 0 V
di/dt = 100 A/μs
0.9
43
1.5
Reverse Recovery Time
Reverse Recovery Charge
Note Pulsed
ns
nC
Qrr
65
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
D.U.T.
V
GS
0
R
G
= 25 Ω
50 Ω
R
L
90%
V
GS
Wave Form
V
GS
10%
90%
R
G
PG.
V
DD
PG.
GS = 20 → 0 V
V
DD
V
VDS
90%
V
DS
V
0
GS
BVDSS
10% 10%
V
DS
Wave Form
0
I
AS
V
DS
ID
τ
t
d(on)
t
r
t
d(off)
t
f
VDD
t
on
t
off
τ = 1
μs
Duty Cycle ≤ 1%
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
= 2 mA
I
G
RL
50 Ω
PG.
V
DD
2
Data Sheet D18227EJ1V0DS
NP82N06PDG
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
160
140
120
100
80
100
80
60
40
20
0
60
40
20
0
0
25
50
75 100 125 150 175
0
25
50
75 100 125 150 175
TC - Case Temperature - °C
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
100
10
R
DS(on) Limited
I
D(Pulse)
PW = 100 μs
(at VGS = 10 V)
1 ms
I
D(DC)
DC
10 ms
Power Dissipation Limited
= 25°C
Single pulse
1
TC
0.1
0.1
1
10
100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
10
Rth(ch-A) = 83.3°C/W
1
Rth(ch-C) = 1.05°C/W
0.1
0.01
Single pulse
100 1000
100μ
1 m
10 m
100 m
1
10
PW - Pulse Width - s
3
Data Sheet D18227EJ1V0DS
NP82N06PDG
DRAIN CURRENT vs.
FORWARD TRANSFER CHARACTERISTICS
DRAIN TO SOURCE VOLTAGE
300
200
100
0
1000
100
10
V
GS = 10 V
V
DS = 10 V
Pulsed
V
GS = 5 V
TA
= 175°C
150°C
1
25°C
−
25°C
55°C
125°C
85°C
0.1
−
0.01
0.001
Pulsed
0
2
4
6
8
10
0
1
2
3
4
5
VDS - Drain to Source Voltage - V
VGS - Gate to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
2.5
2.0
1.5
1.0
0.5
100
10
1
V
DS = 10 V
Pulsed
TA
= −55°C
−25°C
25°C
85°C
125°C
150°C
175°C
V
DS = VGS
ID = 250 μA
0.0
-100
0
100
200
0.1
1
10
100
ID - Drain Current - A
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
10
9
12
11
10
9
8
7
V
V
GS = 5 V
I
I
D
D
= 82 A
= 41 A
8
7
6
5
4
3
2
1
0
6
5
4
3
2
1
0
GS = 10 V
ID = 16.4 A
Pulsed
Pulsed
1
10
100
1000
0
5
10
15
20
ID - Drain Current - A
VGS - Gate to Source Voltage - V
4
Data Sheet D18227EJ1V0DS
NP82N06PDG
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
14
I
D
= 41 A
Pulsed
12
10
8
C
iss
V
GS = 5 V
1000
100
6
C
oss
4
V
GS = 10 V
2
C
rss
V
GS = 0 V
f = 1 MHz
0
-100
-50
0
50
100
150
200
0.1
1
10
100
Tch - Channel Temperature - °C
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
1000
100
10
60
12
10
8
V
V
V
DD = 48 V
DD = 30 V
DD = 12 V
50
40
30
20
10
0
t
d(off)
t
d(on)
6
V
GS
t
r
4
t
f
V
V
DD = 30 V
GS = 10 V
V
DS
2
ID = 82 A
R = 0 Ω
G
0
1
0
20
40
60
80
100
120
0.1
1
10
100
QG - Gate Charge - nC
ID - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
V
GS = 10 V
100
10
V
GS = 5 V
V
GS = 0 V
1
0.1
0.01
di/dt = 100 A/μs
V
GS = 0 V
Pulsed
10
1
10
IF - Diode Forward Current - A
100
0
0.5
1
1.5
VF(S-D) - Source to Drain Voltage - V
5
Data Sheet D18227EJ1V0DS
NP82N06PDG
PACKAGE DRAWING (Unit: mm)
TO-263 (MP-25ZP)
10.0 0.ꢀ
4.45 0.2
No plating
7.88 MIN.
4
1.ꢀ 0.2
0.025
to 0.25
0.5
0.75 0.2
2.54
0.25
1
2
ꢀ
1. Gate
2. Drain
ꢀ. Source
4. Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Body
Diode
Gate
Source
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
6
Data Sheet D18227EJ1V0DS
NP82N06PDG
TAPE INFORMATION
There are two types (-E1, -E2) of taping depending on the direction of the device.
Draw-out side
Reel side
MARKING INFORMATION
NEC
Pb-free plating marking
Abbreviation of part number
82N06
DG
Lot code
RECOMMENDED SOLDERING CONDITIONS
The NP82N06PDG should be soldered and mounted under the following recommended conditions.
For soldering methods and conditions other than those recommended below, please contact an NEC Electronics
sales representative.
For technical information, see the following website.
Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html)
Recommended
Soldering Method
Infrared reflow
Soldering Conditions
Condition Symbol
IR60-00-3
Maximum temperature (Package's surface temperature): 260°C or below
Time at maximum temperature: 10 seconds or less
Time of temperature higher than 220°C: 60 seconds or less
Preheating time at 160 to 180°C: 60 to 120 seconds
Maximum number of reflow processes: 3 times
Maximum chlorine content of rosin flux (percentage mass): 0.2% or less
Maximum temperature (Pin temperature): 350°C or below
Time (per side of the device): 3 seconds or less
Partial heating
P350
Maximum chlorine content of rosin flux: 0.2% (wt.) or less
Caution Do not use different soldering methods together (except for partial heating).
7
Data Sheet D18227EJ1V0DS
NP82N06PDG
•
The information in this document is current as of June, 2006. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all
products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
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•
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M8E 02. 11-1
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